Ba0.6Sr0.4TiO3/聚偏氟乙烯-聚甲基丙烯酸甲酯复合材料的制备及其介电性能

采用流延热压工艺制备Ba_0.6Sr_0.4TiO₃(BST)/聚偏氟乙烯(PVDF)?聚甲基丙烯酸甲酯(PMMA)复合薄膜,研究了PMMA含量对复合材料微观组织结构和介电性能的影响规律。结果表明,BST相能够均匀分散在聚合物基体中,归因于PMMA与PVDF良好的相容性,2种聚合物之间的界面不分明;随着PMMA含量的增加,复合材料的介电常数先降低后升高,耐击穿强度和介电可调性先增加后减少。PMMA含量(体积分数)为15%的BST/PVDF?PMMA₁₅复合材料的综合性能最佳:介电常数为23.2,介电损耗为0.07,耐击穿强度为1412 kV·cm^-1,在550 kV·cm^-1偏压场下,介电可调性为26.2%。     

BaTiO3/ IPNs的制备及介电性能与阻尼性能的相关性

BaTiO₃/ Interpenetrating Polymer Networks (IPNs) composites were prepared by combination of BaTiO₃nanocrystal in tetragonal system and polyurethane(PU) / unsaturated polyester (UP) interpenetrating polymer networks (IPNs). The tetragonal nanocrystalline BaTiO₃was obtained by hydrothermal process and calcination at 1 200 ℃. The prepared materials were polarized with high voltage and small current, and protected by silicon oil. The morphology of BaTiO₃/ IPNs and the effect of combination of BaTiO₃on the damping behavior of IPNs were studied. The relationship between damping performance and dielectric charater was also discussed in terms of dielectric constant and dielectric loss measured. The results show that the areas under loss modulus (E″) and the values of loss factors (tanδ) were both increased by combination of BaTiO₃into IPNs system. The maximum value of E″ increased above 100 MPa compared with pure IPNs and the extent increased more remarkably after polarizing process. The main and shoulder peak of tanδ curves both moved toward higher temperature ranges, and the temperature ranges of tanδ>0.3 was higher than 100 ℃. Moreover, through polarizing process, the composites exhibited synergistic action caused by elastomeric damping, interfacial abrasive damping and piezoelectric damping mechanisms. The relationship study of damping property and dielectric characters showed that the temperature ranges exhibited excellent consistency of maximum dielectric loss and modulus with damping loss factor.     

FeCl3/共轭聚席夫碱复合材料的制备及介电性能

由戊二醛和对苯二胺通过缩合反应合成席夫碱聚合物,并将其与三聚氰胺交联构筑立体网状结构,再与氯化铁配位形成具有"海胆状"结构的FeCl_3/席夫碱复合材料,利用傅里叶红外光谱和扫描电镜对其进行表征。通过对比Fe~(3+)掺杂量分别为0.02、0.03、0.04 mol时复合材料半年前后的电导率、介电常数实部与虚部、介电损耗角正切值和科尔-科尔半圆的改变,发现静置后复合材料介电参数均大幅增长,介电弛豫从无到有,并且在刚合成时其介电常数虚部在3.664×10~6~1.000×10~7 Hz为负值,但经过静置后却转变为正值。其中,静置半年后,Fe~(3+)掺杂量为0.04 mol的席夫碱铁盐聚合物在102 Hz处的介电损耗角正切从0.02升至6.13,电导率从7.15×10~(-7)S·cm~(-1)升至2.19×10~(-5)S·cm~(-1),介电常数实部与虚部也大幅增加,介电损耗机理为二重介电驰豫。     

FeCl3/共轭聚席夫碱复合材料的制备及介电性能

由戊二醛和对苯二胺通过缩合反应合成席夫碱聚合物,并将其与三聚氰胺交联构筑立体网状结构,再与氯化铁配位形成具有"海胆状"结构的FeCl₃/席夫碱复合材料,利用傅里叶红外光谱和扫描电镜对其进行表征。通过对比Fe³⁺掺杂量分别为0.02、0.03、0.04 mol时复合材料半年前后的电导率、介电常数实部与虚部、介电损耗角正切值和科尔-科尔半圆的改变,发现静置后复合材料介电参数均大幅增长,介电弛豫从无到有,并且在刚合成时其介电常数虚部在3.664×10⁶~1.000×10⁷ Hz为负值,但经过静置后却转变为正值。其中,静置半年后,Fe³⁺掺杂量为0.04 mol的席夫碱铁盐聚合物在102 Hz处的介电损耗角正切从0.02升至6.13,电导率从7.15×10^-7 S·cm^-1升至2.19×10-5 S·cm^-1,介电常数实部与虚部也大幅增加,介电损耗机理为二重介电驰豫。     

聚(金属酞菁)酰亚胺/碳纳米管复合材料的制备及介电性能

以四氨基铜(锌)酞菁为四胺单体, 与4,4'-二苯醚二胺(4,4'-ODA)和二苯醚四酸酐(ODPA)进行共聚, 合成了聚(金属酞菁)酰亚胺. 由于金属酞菁的引入, 聚(铜酞菁)酰亚胺和聚(锌酞菁)酰亚胺的介电常数均高于传统聚酰亚胺(PI). 以聚(铜酞菁)酰亚胺为基体, 采用溶液共混的方法, 制备了一系列碳纳米管/聚(铜酞菁)酰亚胺复合材料, 碳纳米管较为均匀地分散在聚合物基体中. 复合材料具有良好的介电性能, 掺杂碳纳米管质量分数为20%的复合材料的介电常数达到200, 介电损耗为2.25.     

Bi4(Ti1/3Sn2/3)3O12掺杂BaTiO3基X8R陶瓷微观结构与介电性能

研究了Bi4(Ti1/3Sn2/3)3O12掺杂对钛酸钡基陶瓷微观结构和介电性能影响。结果表明,掺杂Bi4(Ti1/3Sn2/3)3O12后钛酸钡基陶瓷晶粒明显长大,同时烧结温度可由1 280℃降低至1 180℃。系统的介电性能和Bi4(Ti1/3Sn2/3)3O12的掺杂量有密切关系。当Bi4(Ti1/3Sn2/3)3O12的掺杂量从0.5mol%增加到2mol%,体系的居里峰被明显压低和展宽,当掺杂量为2mol%时居里峰变得不明显。当Bi4(Ti1/3Sn2/3)3O12的掺杂量从0.5mol%增加到2mol%,系统的居里温度由131℃升高至139℃。当Bi4(Ti1/3Sn2/3)3O12的掺杂量为1mol%时,钛酸钡基陶瓷介电常数为1 930,介电常数温度变化率为5%(-55℃),13%(134℃),-8%(150℃),满足X8R标准。     

偶联剂对玻璃纤维/环氧树脂基复合材料介电性能的影响

偶联剂对玻璃纤维／环氧树脂基复合材料介电性能的影响陈平刘胜平张明艳（哈尔滨理工大学电工材料系哈尔滨１５００４０）关键词环氧树脂基复合材料，介电性能，偶联剂，浸润性玻璃纤维／环氧树脂基复合材料（ＧＦＲＰ）具有优异的电气和力学性能．然而孔隙的存在强烈地...     

PANI—PBOPy复合材料的制备及介电性能

采用甲基磺酸（MSA）掺杂聚苯胺（PANI）,并以MSA为溶剂,将其与聚（2,6-亚吡啶基）苯并二嗯唑（PBOPy）采用溶液共混法制备了不同PANI质量分数的PANIPBOPy复合材料。采用红外光谱、wXRD、Uv—Vis、TGA以及SEM对复合材料的结构和性能进行了表征。研究了PANI的质量分数、温度、频率等因素对PANIPBOPy复合材料导电性能和介电性能的影响。研究表明：当PANI的质量分数达到20％时,复合材料的电导率增大了10个数量级;复合材料的介电常数和介电损耗则随着PANI质量分数的增加呈现先增大后减小的趋势,随着频率的升高先迅速降低而后趋于稳定,并且随温度升高而增大,40℃时PANI质量分数为15％的复合材料的介电常数约为230。     

Ti掺杂对(LaMn1-xTixO3)0.67(NiMn2O4)0.33(0≤x≤0.7)陶瓷材料微结构及电性能影响

采用氧化物固相法制备(LaMn1-xTixO3)0.67(NiMn2O4)0.33系列NTC(Negative temperature coefficient)复合热敏电阻材料。利用TG/DSC、激光粒度分析、XRD、SEM、阻-温特性和老化性能测试等手段,确定了粉体煅烧温度,表征了粉体的颗粒尺寸、陶瓷体的物相、形貌及其电学特性、稳定性等与Ti掺杂量的关系。结果表明:在1 200~1 300℃烧结温度范围内,(LaMn1-xTixO3)0.67(NiMn2O4)0.33复合体系的电阻率ρ25℃随Ti含量的增加而显著增加;电阻率ρ25℃和B值变化范围分别为4.4~53 179Ω.cm、1 357~3 998 K。125℃下老化1 000 h阻值变化率ΔR/R0均小于0.51%。该复合体系电阻率、B值调整范围较大,稳定性好,是一种具有实际应用价值的NTC热敏电阻材料。     

SbxZn1-xO1+x/2及其壳聚糖复配物的制备和抗菌性能

采用溶胶-凝胶法制备了SbxZn1-xO1+x/2及其壳聚糖的复配物,通过X-射线衍射仪(XRD)、傅里叶变换红外光谱仪(FTIR)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)等表征了样品的物相结构、组成和微观形貌。以大肠杆菌、白色念珠菌和金黄色葡萄球菌为测试菌种,研究了样品的抗菌性能。结果表明,SbxZn1-xO1+x/2的抗菌活性优于纯ZnO,其中x=0.05的样品活性最好;复配物的抗菌活性明显优于单一组分,当Sb0.05Zn0.95O1.025和壳聚糖质量比mSZ/mCS=2时,样品抗菌性能最佳。     

类钙钛矿新铌酸盐Ba6LaTi3Nb3O21的合成、结构与介电特性

A New Niobate Ba₆LaTi₃Nb₃O₂₁ was synthesized by high temperature solid state reaction in the BaO-La₂O₃-TiO₂-Nb₂O₅ system. The chemical compositions, crystal structure, microstructure, density and melting point of the new compound were characterized by EPMA, XRD, DTA and so on. Ba₆LaTi₃Nb₃O₂₁ crystallizes the rhombohedral system with unit cell parameters a=0.57388(2) nm, c=4.928 3(3) nm, and space group R3m, Z=3. The structure may be described as six (Nb,Ti)O₆ octahedra corner-sharing along c-axis to form perovskite layer connected by Ba atoms. The Ba₆LaTi₃Nb₃O₂₁ ceramics exhibits high dielectric of 74.1, low dielectric loss of 4.7×10^-4 and small temperature coefficient of dielectric constant of -69 ppm·K^-1 at 1 MHz due to its close structure and relative high dielectric polarizabilities of Ba²⁺, La³⁺, Ti⁴⁺ and Nb⁴⁺. Ba₆LaTi₃Nb₃O₂₁ might be a suitable candidate of high ε_r microwave dielectric ceramics.     

Ba0.98Bi0.02(Ti0.9Zr0.1)1-xCuxO3陶瓷的介电性能、弛豫行为与结晶化学特性

采用固相合成法,Bi3+作施主掺杂A位,Cu2+作受主掺杂B位,制备了Ba0.98Bi0.02(Ti0.9Zr0.1)1-xCuxO3(x=0,0.01,0.02,0.03)陶瓷样品。借助XRD、LCR等研究了该陶瓷的结构与介电性能。结果表明:当x=0.03时,陶瓷样品出现第二相。通过GULP模拟,缺陷偶极子的稳定性从低到高依次为:[2BiBa.+VBa″]、[2BiBa.+CuTi/Zr″]、[CuTi/Zr″+VO..],结合实验可知:介电弛豫程度与晶体中缺陷偶极子的存在形式相关,其中x=0.01时,晶体中以[2BiBa.+CuTi/Zr″]为主。随Cu2+掺杂量的增加,介电常数增加,介电常数与B位键价和呈反比变化、与八面体BO6的体积呈正比变化。     

Ba0.98Bi0.02(Ti0.9Zr0.1)1-xCuxO3陶瓷的介电性能、弛豫行为与结晶化学特性

采用固相合成法, Bi3+作施主掺杂A位, Cu₂₊作受主掺杂B位, 制备了Ba_0.98Bi_0.02(Ti_0.9Zr_0.1)_1-xCu_xO₃(x=0, 0.01, 0.02, 0.03)陶瓷样品。借助XRD、LCR等研究了该陶瓷的结构与介电性能。结果表明:当x=0.03时, 陶瓷样品出现第二相。通过GULP模拟, 缺陷偶极子的稳定性从低到高依次为:[2Bi_Ba^·+V_Ba"]、[2Bi_Ba^·+Cu_Ti/Zr"]、[Cu_Ti/Zr"+V_O^··], 结合实验可知:介电弛豫程度与晶体中缺陷偶极子的存在形式相关, 其中x=0.01时, 晶体中以[2Bi_Ba^·+Cu_Ti/Zr"]为主。随Cu₂₊掺杂量的增加, 介电常数增加, 介电常数与B位键价和呈反比变化、与八面体BO₆的体积呈正比变化。     

新铌酸盐Ba5NdTi3Nb7O30的合成与介电性能

The New Niobate Ba₅NdTi₃Nb₇O₃₀ was synthesized by solid state reaction at 1250℃ for 48h. The crystal structure and dielectric properties of Ba₅NdTi₃Nb₇O₃₀ were determined by X-ray powder diffraction and dielectric measurements. The results show that Ba₅NdTi₃Nb₇O₃₀ belongs to ferroelectric phase of tetragonal tungsten bronze structure at room temperature with unit cell parameters: a=1.24424(4)nm, c=0.39476(2)nm, calculated density 5.719g·cm^-3. Ba₅NdTi₃Nb₇O₃₀ belongs to relaxor ferroelectrics. The phase transition temperature (T_c) of Ba₅NdTi₃Nb₇O₃₀ from ferroelectric to paraelectric is found to shift toward higher temperature side at higher fre-quency, and T_c is 90℃ at 1kHz. At room temperature, the dielectric constant (ε_r) and dielectric loss of Ba₅NdTi₃Nb₇O₃₀ decrease with the increase of frequency, and Ba₅NdTi₃Nb₇O₃₀ ceramic have high dielectric constant 489 at 1kHz.     

Bi_2O_3掺杂对Ag(Nb_(0.8)Ta_(0.2))O_3陶瓷结构和介电性能的影响(英文)

本文研究了Bi2O3掺杂对Ag(Nb0.8Ta0.2)O3陶瓷的结构和介电性能的影响。X射线衍射(XRD)结果表明,Bi2O3的掺杂可以使陶瓷中Ag+被还原并析出,且银析出的量随Bi2O3掺杂量的增加而不断增加,这可能源自于Bi3+对Ag+的取代。在一定范围内增大Bi2O3掺杂量可提高Ag(Nb0.8Ta0.2)O3陶瓷的室温介电常数,降低介电损耗,并使温度系数向负值方向移动。当Bi2O3的掺杂量约为3.5wt%时,样品具有较大的介电常数(ε=672)和较小的介电损耗(tanδ=7.3×10-4)。     

Bi2O3掺杂对Ag(Nb0.8Ta0.2)O3陶瓷结构和介电性能的影响

本文研究了Bi₂O₃掺杂对Ag(Nb_0.8Ta_0.2)O₃陶瓷的结构和介电性能的影响。X射线衍射(XRD)结果表明,Bi₂O₃的掺杂可以使陶瓷中Ag⁺被还原并析出,且银析出的量随Bi₂O₃掺杂量的增加而不断增加,这可能源自于Bi³⁺对Ag⁺的取代。在一定范围内增大Bi₂O₃掺杂量可提高Ag(Nb_0.8Ta_0.2)O₃陶瓷的室温介电常数,降低介电损耗,并使温度系数向负值方向移动。当Bi₂O₃的掺杂量约为3.5wt%时,样品具有较大的介电常数(ε=672)和较小的介电损耗(tanδ=7.3×10^-4)。