Emission enhancement of Eu(III) and/or Tb(III) ions entrapped in silica xerogels with ZnO nanoparticles by energy transfer

Luminescent materials consisting of Eu(III) and/or Tb(III) ions and quantum dots of the ZnO semiconductor were immobilized in oxide xerogels by the impregnation method. The material’s excitation spectra showed the characteristic absorption bands of lanthanide(III) ions and sharp bands at low wavelengths attributed to excitons in the semiconductor nanoparticles. The luminescence emission of Ln(III) ions (Ln = Tb and/or Eu) showed very low intensity when typical excitation wavelengths for both ions were used (λ_exc = 394 for Eu(III), 350 nm for Tb(III)). In three-component materials (ZnO quantum dots and Ln(III) ions in oxide xerogels) only the Tb(III) emission could be improved by using an excitation wavelength corresponding to the position of one of the exciton absorption bands. The energy transfer enhancing the Eu(III) emission was possible in the four-component system (ZnO quantum dots plus Tb(III) and Eu(III) incorporated into the oxide matrix). The best results of the Eu(III) emission intensity were obtained when the silica xerogel served as the matrix of the four-component material thermally treated at 80 °C.     

Effect of OH-content on thermal and chemical properties of SnOP2O5 glasses

Glasses with 55–60 mol% SnO and 40–45 mol% P₂O₅ have shown extremely large differences in the chemical and thermal properties depending on the temperature at which they were melted. Glasses prepared at low melting temperature, 450–550 °C, had low T_g, 150–200 °C, and low chemical stability. Glasses prepared at high melting temperature, 800–1200 °C, had much higher T_g, 250–300 °C, and much higher chemical stability. No significant differences were found by ¹¹⁹Sn Mössbauer and ³¹P Nuclear Magnetic Resonance spectroscopy. Large differences in the OH-content could be detected as the reason by infrared absorption spectroscopy, thermal analyses, and ¹H Nuclear Magnetic Resonance spectroscopy. In samples with low T_g, a broad OH – vibration band around 3000 nm with an absorption intensity >20 cm^?1, bands at 2140 nm with intensity ～5 cm^?1, at 2038 nm with intensity ～2.7 cm^?1, and at 1564 nm with intensity ～0.4 cm^?1 were measured. These samples have shown a mass loss of 3–4 wt% by thermal gravimetric analyses under argon in the temperature range 400–1000 °C. No mass loss and only one broad OH-band with a maximum at 3150 nm and low absorption intensity <4 cm^?1 could be detected in samples melted at high temperature, 1000–1200 °C, which have much higher T_g, ～300 °C, and much higher chemical stability.     

Nanostructural and optical features of amorphous AlxSi0.45−xO0.55 (0 ⩽ x ⩽ 0.05) thin films prepared by RF-magnetron sputter techniques

The nanostructural, chemical, and optical features of Al_xSi_0.45−xO_0.55 (0 ⩽ x ⩽ 0.05) thin films were investigated in terms of Al concentration and post-deposition annealing conditions; the films were prepared by co-sputtering a Si main target and Al-chips, and the annealing was carried out at temperatures of 400–1100 °C. The a-Si_0.45O_0.55 films prepared without Al-chips and annealed at 800 °C contain ∼3.5 nm-sized Si nanocrystallites. The photoluminescence (PL) intensity as well as the volume fraction of Si nanocrystallites increased with increasing the concentration of Al to a certain level. In particular, the intensity of the PL spectra of the Al_0.025Si_0.425O_0.550 films which were annealed at 800 °C increased significantly at wavelengths of ∼580 nm. It is highly likely that the observed increase in the PL intensity is caused by the raise in the total volume of the ∼3.5 nm-sized nanocrystallites in the films. The addition of Al as well as the post-deposition annealing allow adjustment and control of the nanostructural and light-emission features of the a-SiO_x films.     

Structural and optical spectroscopy of LiNbO3:Tm nanocrystals embedded in a SiO2 glass matrix

Transparent SiO₂:Li₂O:Nb₂O₅ glass doped with Tm³⁺ has been prepared by the sol–gel method, and heat-treated in air (HT) at temperatures between 500 and 800 °C. X-ray diffraction (XRD) patterns and Raman spectroscopy show SiO₂ and LiNbO₃ phases in samples HT above 650 °C, and a NbTmO₄ phase for T > 750 °C. The XRD SEM analysis show increasing particle size and number with the increase of HT temperature. Intra-4f¹² transitions due to Tm³⁺ ion dispersed in the matrix are observed in samples with T > 650 °C. The luminescence is dominated by the ¹G₄ → ³F₄ (～650 nm), ¹D₂ → ³F₃ (～780 nm), ³H₄ → ³H₆ (～800 nm), ³H₅ → ³H₆ (～1200 nm) and ³H₄ → ³F₄ (～1500 nm) transitions under resonant excitation to the ion levels.     

Enhanced luminescence from Si quantum dots/SiO2 multilayers by hydrogen annealing

Si quantum dots/SiO₂ multilayers were prepared by annealing a-Si:H/SiO₂ stacked structures at 1100 °C . Photo- and electro-luminescence band around 750 nm can be observed from Si QDs/SiO₂ multilayers due to the recombination of electron-hole pairs in Si QDs/SiO₂ interfaces. The electro-luminescence intensity was obviously enhanced after post hydrogen annealing at 400 °C. Electron spin resonance measurements were used to characterize the change of the defect states after hydrogen annealing. It is found that there exists a-centers (g value = 2.006), which is related to the Si dangling bonds in Si QDs in our samples. Hydrogen annealing can significantly reduce non-luminescent a-centers and enhance the electro-luminescence intensity consequently.     

Structural,electrical and optical properties of in-situ phosphorous-doped Ge layers

We have studied the impact of temperature and pressure on the structural and electronic properties of Ge:P layers grown with GeH₄+PH₃ on thick Ge buffers, themselves on Si(0 0 1). The maximum phosphorous atomic concentration [P] exponentially decreased as the growth temperature increased, irrespective of pressure (20 Torr, 100 Torr or 250 Torr). The highest values were however achieved at 100 Torr (3.6×10²⁰ cm^?3 at 400 °C, 2.5×10¹⁹ cm^?3 at 600 °C and 10¹⁹ cm^?3 at 750 °C). P atomic depth profiles, “box-like” at 400 °C, became trapezoidal at 600 °C and 750 °C, most likely because of surface segregation. The increase at 100 Torr of [P] with the PH₃ mass-flow, almost linear at 400 °C, saturated quite rapidly at much lower values at 600 °C and 750 °C. Adding PH₃ had however almost no impact on the Ge growth rate (be it at 400 °C or 750 °C). A growth temperature of 400 °C yielded Ge:P layers tensily-strained on the Ge buffers underneath, with a very high concentration of substitutional P atoms (5.4×10²⁰ cm^?3). Such layers were however rough and of rather low crystalline quality in X-ray Diffraction. Ge:P layers grown at 600 °C and 750 °C had the same lattice parameter and smooth surface morphology as the Ge:B buffers underneath, most likely because of lower P atomic concentrations (2.5×10¹⁹ cm^?3 and 10¹⁹ cm^?3, respectively). Four point probe measurements showed that almost all P atoms were electrically active at 600 °C and 750 °C (1/4th at 400 °C). Finally, room temperature photoluminescence measurements confirmed that high temperature Ge:P layers were of high optical quality, with a direct bandgap peak either slightly less intense (750 °C) or more intense (600 °C) than similar thickness intrinsic Ge layers. In contrast, highly phosphorous-doped Ge layers grown at 400 °C were of poor optical quality, in line with structural and electrical results.     

Phase evolution on heat treatment of sodium silicate water glass

Heat treatment of sodium silicate water glass of the nominal composition Na₂O/SiO₂ = 1:3 was carried out from 100 °C up to 800 °C and the advancement of the resulting phases was followed up by powder X-ray diffraction, scanning electron microscopy and thermogravimetry along with differential thermal analysis. The water glass, initially being an amorphous solid, starts to form crystals of β-Na₂Si₂O₅ at about 400 °C and crystallizes the SiO₂ modification cristobalite at about 600 °C that coexists along with β-Na₂Si₂O₅ up to 700 °C. At 750 °C Na₆Si₈O₁₉ appears as a separate phase and beyond 800 °C, the system turns into a liquid.     

Relaxation of polaronic charge carriers in lithium manganese spinels

Lithium manganese spinels Li_1+xMn_2−xO₄, 0 ⩽ x ⩽ 0.33, were prepared by wet chemistry technique followed by heat-treatment at 750 °C or 800 °C. Differential scanning calorimetry was used to reveal phase transitions. Electrical properties were studied by impedance spectroscopy. LiMn₂O₄ exhibited phase transition below room temperature. The transition, seen as an exothermic event in DSC and a steep decrease of conductivity upon cooling, was sharp in sample sintered at 800 °C and broadened over a range of temperature in sample sintered at 750 °C. In the low temperature phase of LiMn₂O₄, two relaxations of similar strength were observed in the frequency dependent permittivity. The low frequency process was identified as relaxation of charge carriers since the relaxation frequency followed the same temperature dependence as the dc conductivity. The high frequency process exhibited milder temperature dependence and was attributed to dipolar relaxation in the charge-ordered structure. The dipolar relaxation was barely visible in Li substituted samples, x ⩾ 0.05, which did not undergo structural phases transition. Measurements extended to liquid nitrogen temperature showed gradual lowering of the activation energy of conductivity and relaxation frequencies, behavior typical for phonon-assisted hopping of small polarons.     

The effect of heat treatment on the paracrystallinity of an opal-CT found in a bentonite

To investigate temperature dependence of paracrystallinity for opal-CT, a bentonite containing approximately 34% by mass opal-CT have been used as material. Since opal-CT can not be separated entirely, the bentonite samples have been heated at different temperatures in the interval from 200 °C to 1300 °C for 2 h, and at 1050 °C for different time intervals changing from 2 h to 24 h. The X-ray diffraction (XRD) patterns of the original and heated samples have been obtained. The increase in the paracrystallinity has been discussed according to the thermal behavior of the relative intensity (I/I₀), relative full width at half-maximum peak height (FWHM/FWHM₀ ≡ W) and d-value of the most characteristics XRD peak for opal-CT between 0.405 nm and 0.410 nm region. The increase in I/I₀ from 1 to 3, and in d(l 0 1) spacing from 0.4050 to 0.4095 and decrease in W from 1 to 0.6 show that there is an increase in paracrystallinity for opal-CT by rising the temperatures between 800 °C and 1300 °C. The increase, of I/I₀ value from 1 to 5 by heating at 1050 °C while time increases from 2 h to 24 h shows that the paracrystallinity of opal-CT increase by time and reaches steady state condition approximately 1300 °C.     

Photoluminescence and microstructure of Mn-doped ZnS phosphor powder co-fired with ZnS nanocrystallites

In this study, we correlated the photoluminescence (PL) with the microstructure of ZnS:Mn phosphor powders prepared by firing ZnS with MnO (1 mol%), NaCl (1 mol%) and ZnS nanocrystallites (NCs) in the range of 0–100 wt% at 600–1000 °C for 2 h in the atmosphere of 3%H₂/Ar. ZnS NCs of 10–30 nm in size were produced by co-precipitation of zinc nitrate and sodium sulfide solutions at room temperature. Thermal analysis (DTA/TG) and X-ray diffraction (XRD) results indicated that the cubic-hexagonal transformation temperature of ZnS NCs was lowered to approximately 600 °C, which was much lower than that of bulk ZnS (1020 °C). PL measurements revealed that ZnS:Mn fired with 1 wt% ZnS NCs showed the optimal luminescence intensity when compared to those without or with higher ZnS NCs (>1 wt%). An appropriate amount of ZnS NCs (1 wt%) acting as the flux in the firing process was inferred to avoid the inhomogeneous distribution of Mn²⁺ as well as the migration of excitation energy to quenching sites and therefore to result in the enhanced PL intensity.     

Growth and characteristic of Sr3Tb(BO3)3 crystal

A new borate single crystal of Sr₃Tb(BO₃)₃ with dimension Ф20×25 mm² has been grown by the Czochralski method. The grown crystal was characterized by DTA–TGA, FTIR and X-ray powder diffraction analysis. The results showed the crystal with [BO₃]^3? is congruently melting at 1351.35 °C which belongs to hexagonal structure. The hardness of Sr₃Tb(BO₃)₃ crystal is 422.5 VDH, and is equal to 5.0 moh. The thermal expansion coefficients were determined to be 2.08×10^?5/°C along (1 0 0) direction and 7.43×10^?6/°C along (0 0 1) direction and the transmission spectrum was measured in 320–1800 nm at room temperature. The magnetic properties of the single crystal were studied which showed its paramagnetism and magnetic anisotropy. The specific Faraday rotation of single crystal was measured at room temperature in 532, 633, and 1064 nm wavelength. The Verdet constants and magneto-optical figures of merit were investigated. The primary emphasis is laid to explore a new magneto-optical material, all the magneto-optical properties of Sr₃Tb(BO₃)₃ are comparing to the ones of TGG.     

ZnO growth on Si with low-temperature ZnO buffer layers by ECR-assisted MBE

High-quality ZnO films were grown on Si(1 0 0) substrates with low-temperature (LT) ZnO buffer layers by an electron cyclotron resonance (ECR)-assisted molecular-beam epitaxy (MBE). In order to investigate the optimized buffer layer temperature, ZnO buffer layers of about 1.1 μm were grown at different growth temperatures of 350, 450 and 550 °C, followed by identical high-temperature (HT) ZnO films with the thickness of 0.7 μm at 550 °C. A ZnO buffer layer with a growth temperature of 450 °C (450 °C-buffer sample) was found to greatly enhance the crystalline quality of the top ZnO film compared to others. The root mean square (RMS) roughness (3.3 nm) of its surface is the smallest, compared to the 350 °C-buffer sample (6.7 nm), the 550 °C-buffer sample (7.4 nm), and the sample without a buffer layer (6.8 nm). X-ray diffraction (XRD), photoluminescence (PL) and Raman scattering measurements were carried out on these samples at room temperature (RT) in order to characterize the crystalline quality of ZnO films. The preferential c-axis orientations of (0 0 2) ZnO were observed in the XRD spectra. The full-width at half-maximum (FWHM) value of the 450 °C-buffer sample was the narrowest as 0.209°, which indicated that the ZnO film with a buffer layer grown at this temperature was better for the subsequent ZnO growth at elevated temperature of 550 °C. Consistent with these results, the 450 °C-buffer sample exhibits the highest intensity and the smallest FWHM (130 meV) of the ultraviolet (UV) emission at 375 nm in the PL spectrum. The ZnO characteristic peak at 438.6 cm⁻¹ was found in Raman scattering spectra for all films with buffers, which is corresponding to the E₂ mode.     

Tb3+-impregnated,non-porous silica glass possessing intense green luminescence under UV and VUV excitation

A colorless transparent luminescence material was successfully prepared by impregnation of leached, porous glass with Tb³⁺ ions followed by reductive sintering in a CO atmosphere. Tb³⁺ emissions under ultraviolet (UV) and vacuum ultraviolet (VUV) excitation clearly showed the most intense emission band to be situated at 543 nm, which corresponds to the ⁵D₄ → ⁷F₅ transition. Sintering of the Tb glass in a reducing atmosphere resulted in a significant enhancement of Tb³⁺ emission intensity in comparison with sintering in air. The presence of traces of cerium ions was verified in Tb glasses, and more Ce³⁺ ions were produced as a result of the reductive sintering. The increase in Ce³⁺ ions was believed to be mainly responsible for the enhancement of ⁵D₃ → ⁷F_j and ⁵D₄ → ⁷F_j transitions from Tb³⁺ ions owing to an energy transfer channel. A clearly defined difference in the spectral energy distribution of Tb³⁺ emissions was found for 231 nm UV and 160 nm VUV excitation of the Tb glass. The phenomenon of cross relaxation was only observed under 231 nm UV excitation. Different excitation mechanisms were taken into account. Direct excitation of Tb³⁺ ions together with Ce³⁺ ions occurred in the Tb glass under the 231 nm UV light, whereas indirect excitation consisting of host absorption of energy and transfer from host to Tb³⁺ ions occurred under the 160 nm VUV light.     

Precipitation of zinc ferrite nanoparticles in the Fe2O3–ZnO–SiO2 glass system

Glass materials in the ZnO–Fe₂O₃–SiO₂ system, containing zinc ferrite nanoparticles, were prepared by the sol–gel method and characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), Mössbauer spectroscopy, AC- and DC-magnetization techniques. The gel samples, dried at 130 °C, were further heat treated in air at 500 and 800 °C. At 500 °C zinc ferrite and hematite nanoparticles, with an average size of approximately 24 nm, were precipitated in the brown and opaque 10ZnO–10Fe₂O₃–80SiO₂ and in the ruby colored transparent 5ZnO–5Fe₂O₃–90SiO₂ and 2.5ZnO–2.5Fe₂O₃–95SiO₂ glass matrices. In the 5ZnO–5Fe₂O₃–90SiO₂ sample the nanoparticles exhibited ferro or ferrimagnetic interactions combined with superparamagnetism with a blocking temperature of approximately 14 K. Heating at 800 °C seems to cause partial dissolution of the zinc ferrite and hematite particles in all the investigated compositions. Accordingly at 800 °C the 5ZnO–5Fe₂O₃–90SiO₂ glass shows a paramagnetic behavior down to 2 K.     

Energy transfer and surface plasmon resonance in luminescent materials based on Tb(III) and Ag or Au nanoparticles in silica xerogel

Two-component material consisting of terbium(III) ions doping silica xerogel prepared by sol–gel procedure shows enhanced Tb(III) photoluminescence. We postulate that in this material the enhancement is owing to energy transfer from one of the defect states in silica to emitting states ³D₃ and ⁵D₄ of Tb(III).Surface plasmon resonance effect causes two contrary phenomena. Thus, if in the vicinity of the Tb(III) emission centers are present nanoparticles of Ag, observed is additional improvement of the Tb(III) emission. While, presence of Au nanostructures in the silica doped with Tb(III) causes quenching of the luminescence. In general, both the three-component materials exhibit enhancement of the component silica emission band in the resultant 380 nm band and relatively high thermal stability, especially above 600 °C.     

Fabrication of Cr4+,Nd3+:YAG transparent ceramics for self-Q-switched laser

Transparent 0.1 at.%Cr,1.0 at.%Nd:YAG (Y₃Al₅O₁₂) ceramics were fabricated by a solid-state reaction and vacuum sintering with CaO as a charge compensator and tetraethyl orthosilicate (TEOS) as a sintering aid using high-purity powders of Al₂O₃, Y₂O₃, Nd₂O₃ and Cr₂O₃. The mixed powder compacts were sintered at 1800 °C for 5 h and 30 h under vacuum. The optical transmittance of the Cr,Nd:YAG ceramics sintered at 1800 °C for 5 h and 30 h is ∼63% and ∼78% in the infrared wavelengths, respectively. The two samples exhibit pore-free structures and the average grain size is about 10 and 20 μm. For the sample sintered at 1800 °C for 5 h, the dominant fracture mechanism is the transgranular fracture. With increase of holding time up to 30 h, the ratio of intergranular fracture surfaces increase and more Cr³⁺ ions in the Cr,Nd:YAG ceramic transform to Cr⁴⁺. High-quality Cr⁴⁺,Nd³⁺:YAG transparent ceramics may be a potential self-Q-switched laser material.     

Enhancement of photoluminescence in SiCxNy nanoparticle films by addition of a Ni buffer layer

This work reports the effect of the presence of a Ni buffer layer on the photoluminescence (PL) of SiC_xN_y nanoparticle films prepared by RF plasma magnetron sputtering process in a reactive N₂ + Ar + H₂ gas mixture. An introduction of a Ni buffer of 80 nm or thicker remarkably improves the PL of the films. Annealing in a temperature range of 400–1100 °C is found to significantly affect the PL intensity. Optimal PL is achievable at 600 °C. X-ray photoelectron and Fourier-transform infrared spectroscopy suggest that the strong PL is directly related to the composition of the SiC_xN_y nanoparticle and the concentration of Si–O, and Si–N bonds. The results are relevant to the development of wide bandgap optoelectronic devices.     

The effect of calcination temperature on the crystallinity of TiO2 nanopowders

TiO₂ nanopowders have been prepared using 0.1 M titanium tetraisopropoxide (TTIP) in varied pH aqueous solution containing TMC and NP-204 surfactants. Only the powder acquired from a solution of pH=2 has a regular particle size distribution. Anatase phase powders are obtained by calcination in nitrogen in the 250–500°C temperature range. When calcined at 400°C, the diameter of the nanoparticles is approximately 10 nm with a specific surface area of 106.9 m²/g. As the calcination temperature is increased, the particle size increases. Rutile phase powders are formed at calcination temperatures above 600°C.     

Optical investigations of germanium nanoclusters – Rich SiO2 layers produced by ion beam synthesis

In this work, refractive index and extinction coefficient spectra of germanium nanoclusters – rich SiO₂ layers have been determined using variable angle spectroscopic ellipsometry (VASE) in the 250–1000 nm range. The samples were produced by Ge⁺ ion implantation into SiO₂ layers on Si substrates and subsequent annealing at temperatures from 700 to 1100 °C. It is known from previous investigations of similar samples that the Ge nanoclusterization process starts already at 800 °C and spherical Ge nanocrystallites 5–8 nm in diameter are observed in the SiO₂ layers after annealing for 1 h at even higher temperatures of 1000–1100 °C. Rutherford backscattering spectrometry (RBS) was employed to measure the Ge atom concentration depth profiles in the studied samples. The RBS results helped us choose realistic models for the VASE analysis which were necessary for a proper interpretation of the VASE data. It has been found that the refraction index value for the SiO₂/Si layer increases after Ge implantation. This effect can be explained by a defect-dependent compaction of ion-bombarded layers. A band’s tail in the extinction coefficient spectra for all the samples is observed which originates from a strong ultraviolet absorption band at 6.8 eV due to a Germanium Oxygen-Deficiency Center (GeODC) and/or a Ge-E’center in SiO₂. The annealing process results in the emergence of weaker extinction coefficient bands in the 400–600 nm region, associated with direct band-to-band transitions in Ge nanostructures. Transformation of these bands, including their blue-shift with the increasing annealing temperature could be explained via a quantum-confinement mechanism, by size and structural changes in Ge nanostructures.     

An alumina mat with a nano microstructure prepared by centrifugal spinning method

Ceramic fiber products specially alumina mat because of low thermal conductivity and high melting point are used as high temperature insulating materials. Alumina has so high melting point (T_m > 2040 °C) that its mat can be produced through sol–gel method. In this research alumina mat has been manufactured by sol–gel spinning method using our laboratory-designed centrifugal spinneret. The desired viscosity of sol for spinning is 150 P. Phase transformation of the product begins at 600 °C and there is not any amorphous phase at 800 °C and theta alumina (θ-Al₂O₃) is the main phase. In this work, transformation of transitional phase to alpha alumina (α-Al₂O₃) takes place from 1000 °C to 1200 °C. The optimum percent of silica in alumina mat is 4 wt%. Fibers constitute network structure that their average diameter is about 10 μm and contains very fine grains (100 nm). The silica percent concerning the limits of this study (<10 wt%) does not effect on fiber diameter, but grain size decreases from about 200 nm to less than 100 nm while increasing silica percent.