Oligonuclear gallium nitrogen cage compounds: molecular intermediates on the way from gallium hydrazides to gallium nitride

Gallium hydrazides are potentially applicable as facile starting compounds for the generation of GaN by thermolysis. The decomposition pathways are, however, complicated and depend strongly on the substituents attached to the gallium atoms and the hydrazido groups. This paper describes some systematic investigations into the thermolysis of the gallium hydrazine adduct Bu(t)(3)Ga←NH(2)-NHMe (1a) and the dimeric gallium hydrazides [R(2)Ga(N(2)H(2)R')](2) (2b, R = Bu(t), R' = Bu(t); 2c, R = Pr(i), R' = Ph; 2d, R = Me, R' = Bu(t)) which have four- or five-membered heterocycles in their molecular cores. Heating of the adduct 1a to 170 °C gave the heterocyclic compound Bu(t)(2)Ga(μ-NH(2))[μ-N(Me)-N(=CH(2))]GaBu(t)(2) (3) by cleavage of N-N bonds and rearrangement. 3 was further converted at 400 °C into the tetrameric gallium cyanide (Bu(t)(2)GaCN)(4) (4). The thermolysis of the hydrazide (Bu(t)(2)Ga)(2)(NH-NHBu(t))(2) (2b) at temperatures between 270 and 420 °C resulted in cleavage of all N-N bonds and the formation of an octanuclear gallium imide, (Bu(t)GaNH)(8) (6). The trimeric dialkylgallium amide (Bu(t)(2)GaNH(2))(3) (5) was isolated as an intermediate. Thermolysis of the hydrazides (Pr(i)(2)Ga)(2)(NH-NHPh)(NH(2)-NPh) (2c) and (Me(2)Ga)(2)(NH-NHBu(t))(2) (2d) proceeded in contrast with retention of the N-N bonds and afforded a variety of novel gallium hydrazido cage compounds with four gallium atoms and up to four hydrazido groups in a single molecule: (Pr(i)Ga)(4)(NH-NPh)(3)NH (7), (MeGa)(4)(NH-NBu(t))(4) (8), (MeGa)(4)(NH-NBu(t))(3)NBu(t) (9), and (MeGa)(4)(NHNBu(t))(3)NH (10). Partial hydrolysis gave reproducibly the unique octanuclear mixed hydrazido oxo compound (MeGa)(8)(NHNBu(t))(4)O(4) (11).     

Processing and structure of gallium nitride—gallium oxide platelet nanostructures

Gallium nitride-gallium oxide structures were formed by heat-treating gallium nitride (GaN) powders in several gas environments at temperatures from 400°C to 900°C. The platelet nanostructured particles were examined at several stages of oxidation by microscopic, structural, chemical and optical spectroscopic techniques. Particle morphology, nanophase characterization and photoluminescence data showed that the oxide layers passivate the GaN platelets surfaces and significantly reduce the yellow emission while enhancing near band-edge emission.     

Spectroscopy of laser-excited indium,gallium and indium–gallium systems

The spectroscopy of dense Ga, In and In–Ga vapours is studied via resonant pulsed laser excitation at 403.4 nm (Ga) and 410.3 nm (In). Besides some known atomic Rydberg levels emission, satellite wings on the blue side of the fundamental transitions show up both in the homonuclear and heteronuclear vapours. They are due to the presence of excited homonuclear dimers that form in the collision between excited and ground-state atoms. The formation of heteronuclear dimers is inferred by the time-resolved analysis of some atomic fluorescences.     

Planar hexacoordinate gallium

We report the first planar hexacoordinate gallium (phGa) center in the global minimum of the GaBe₆Au₆⁺ cluster which has a star-like D_6h geometry with ¹A_1g electronic state, possessing a central gallium atom encompassed by a Be₆ hexagon and each Be–Be edge is further capped by an Au atom. The electronic delocalization resulting in double aromaticity (both σ and π) provides electronic stability in the planar form of the GaBe₆Au₆⁺ cluster. The high kinetic stability of the title cluster is also understood by Born–Oppenheimer molecular dynamics simulations. The energy decomposition analysis in combination with the ‘natural orbitals for chemical valence’ theory reveals that the bonding in the GaBe₆Au₆⁺ cluster is best expressed as the doublet Ga atom with 4s²4p_⊥¹ electronic configuration forming an electron-sharing π bond with the doublet Be₆Au₆⁺ moiety followed by Ga(s)→[Be₆Au₆⁺] σ-backdonation and two sets of Ga(p_‖)←[Be₆Au₆⁺] σ-donations.

A star-like texture containing a planar hexacoordinate gallium center is reported in the lowest energy isomer of the GaBe6Au₆⁺ cluster. High thermodynamic and kinetic stability of the title cluster makes it suitable candidate for experimental realization.     

Determination of iron in high purity gallium arsenide, gallium and arsenic as the bathophenanthroline complex

Summary A spectrophotometric method is described for the determination of iron in high purity GaAs and As or Ga, having a limit of detection of 3.5×10^–5% and 7×10^–5% Fe, resp. After sample dissolution and pre-reduction of Fe³⁺ to the bivalent state with hydroxylammonium chloride the red iron(II)-bathophenanthroline complex is formed in the presence of sodium citrate, ascorbic acid and perchlorate. It is extracted into chloroform and optical density of the resulting extract is measured at 533 nm. The effect of copper is discussed. The procedure is stated to be rapid and applicable not only to Ga, As and GaAs, but also to other materials.

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Zusammenfassung Es wird eine spektralphotometrische Methode zur Eisenbestimmung in Ga oder As und GaAs mit Nachweisgrenzen von 3,5 · 10^–5% bzw. 7,0 · 10^–5% Fe beschrieben. Nach Lösung der Probe und Vorreduktion des Eisens mit Hydroxylammoniumchlorid wird in Anwesenheit von Natriumcitrat, Ascorbinsäure und Perchlorat ein roter Komplex von Eisen(II)-bathophenanthrolin gebildet, der mit Chloroform extrahiert wird und dessen optische Dichte bei 533 nm gemessen wird. Der Einfluß des Kupfers wird diskutiert. Die vorgeschlagene Methode ist schnell durchfÜhrbar und kann nicht nur fÜr Ga, As und GaAs, sondern auch fÜr andere Materialien angewendet werden.

     

Aluminum, gallium, and indium oxopivalates: Thermodynamic characteristics of gallium oxopivalates

Aluminum, gallium, and indium oxopivalates were synthesized by a heterophase method, and their evaporation was studied by the Knudsen effusion method with the mass-spectral analysis of the gas phase. It was shown that oxopivalates can be considered within binary systems as compounds of the type mM(piv)₃ · nM₂O₃. The standard enthalpies of formation of gallium oxopivalates Ga₃O(piv)_7(gas), 7Ga(piv)₃ · Ga₂O_3(solid), 4Ga(piv)₃ · Ga₂O_3(solid), and 7Ga(piv)₃ · 2Ga₂O_3(solid) were found.     

Thermodynamische untersuchung der systeme eisen—gallium und kobalt—gallium

Solution calorimetric methods involving a BrBrH mixture as the solvent have been used to determine the enthalpies of formation of solid FeGa and CoGa solutions. The enthalpies of formation exhibit large negative values. The maximum values are ?8.5 kcal g-at.^?1 for the FeGa system and ?10.7 kcal g-at.^?1 for the CoGa system. An evaluation of the melt equilibria in the FeGa system indicates that the entropies of formation also exhibit large negative values.The discussion of the results pertaining to these systems shows that structural differences between the components and homopolar and heteropolar contributions to the binding exert considerable influence on the thermodynamic properties of the solid alloys.     

Instrumental neutron activation analysis of high-purity gallium,arsenic, and gallium arsenide

Instrumental neutron activation analysis (INAA) has been applied to obtain useful data on impurity concentrations in ultra-pure materials whose matrix elements are strongly activated and create severe interference for several weeks after irradiation. An analytical procedure has been developed and used to determine Sc, Fe, Co, Zn, Se, Zr, Ag, In, Sn, Sb, Te, and Hg in high-purity gallium, arsenic, and gallium arsenide. Detection limits ranged from 50 ng/g for iron to 0.001 ng/g for scandium. Problems of contamination control, blank level, and standardization are discussed.     

Energy distributions of gallium nanoclusters

Starting with the heat-capacity data of Breaux et al., [J. Am. Chem. Soc. 126, 8629 (2004)] we use the maximum-entropy method to calculate energy distribution functions for gallium-ion nanoclusters over a wide temperature range (100-1050 K). Specifically, we calculate energy distributions for clusters containing n = 39 and n = 45 gallium atoms. For the case of n = 39 clusters the energy distribution gets systematically broader as a function of temperature with no indication of any marked structural change in the cluster. On the other hand, the energy distribution for the n = 45 cluster first gets broader as a function of temperature but then gets narrower again as the temperature is further increased, indicating that there is some kind of structural transition taking place in this cluster species.     

Solid-state high-resoluction NMR studies on gallium arsenide and indium gallium arsenide semiconductors

Chemical shifts of GaAs and InGaAs were observed by solid-state high-resolution NMR. The spectrum of GaAs appeared as a single peak but that of InGaAs consisted of an intense narrow peak and a weak broad one which appeared at ≈10–15 ppm slightly higher field from the former.     

Lewis acidity of gallium halides

The Lewis acidity of GaF(3), GaF(2)Cl, GaFCl(2), and GaCl(3) in acid-base interactions has been studied by taking ammonia as their electron-donating counterpart. We have derived an unoccupied reactive orbital that shows the maximum localization on the Ga atomic center for each species. The orbital is located lower in energy compared to those in the corresponding boron and aluminum halides. In contrast to boron halides, the unoccupied reactive orbital of the acid site tends to be delocalized considerably on the halogens as the fluorines are substituted by chlorines in gallium halides. The trend observed in the effects of fluorine and chlorine on the acidity of the gallium halides is opposite to those found in the boron halides. This cannot be interpreted solely in terms of the electron-accepting strength of the gallium center, but can be understood by including electrostatic interactions and closed-shell repulsion with ammonia in the adducts. The origin of the difference in Lewis acidity of BCl(3), AlCl(3), and GaCl(3) has been clarified.     

Characterization of high purity gallium

Multi-step wet analytical procedures were tested on gallium samples of different purity grades. Results obtained were compared with those of spark source mass spectrometry (SSMS) and glow discharge mass spectrometry (GDMS). It was found that multi-step procedures, as applied, with preconcentration factors of 200 are suitable to determine most of the detectable elements in high purity gallium in the ng/g-range. The results thus obtained agree well with those obtained by mass spectrometry. The sensitivity of the multi-step and mass spectrometry methods is not sufficient to detect traces of the investigated elements in super purity gallium, i.e. better than 6 N. These qualities can be differentiated, however, by single crystal resistivity measurement.     

Photometric determination of gallium in the presence of aluminum

The complexation of gallium(III) with 2,2′,3,4-tetrahydroxy-3′-sulfo-5′-nitrobenzene in the presence of and without 1,10-phenanthroline was studied. In the presence of 1,10-phenanthroline, a mixed-ligand complex with the component ratio 1:2:1 and the stability constant logβ = 15.5 ± 0.2 is formed. The effect of pH, time, temperature, and the concentration of components on the formation of the binary and mixed-ligand complexes of gallium was studied. A procedure was developed for the photometric determination of gallium(III) in the presence of aluminum (III).     

Determination of submicrogram amounts of gallium by ion-exchanger fluorimetry Determination of gallium in natural waters

A method for microdetermination of gallium at ng/ml level has been developed, based on ion-exchanger fluorimetry. The gallium reacts with salicylidene-o-aminophenol to give a highly fluorescent complex, which is fixed on a dextran-type cationic resin. The fluorescence of the resin, packed in a 1-mm silica cell, is measured directly with a solid-surface attachment. The range of concentration of the method is 2.0-10.0 ng/ml, the RSD 1.3% and the detection limit 0.3 ng/ml. The method has been applied to the determination of gallium in natural waters. The gallium content found in tap water was higher than that in raw water. This is related to the use of commercial aluminium salts in the water-treatment plant.     

Thermodynamics of vaporization of gallium trichloride

The unsaturated and saturated pressures of gallium trichloride vapor were measured by the static method with membrane-gauge manometers in wide pressure (0.2–760 Torr) and temperature (313–1071 K) intervals. Scanning calorimetry was used to determine the thermodynamic characteristics of GaCl₃ fusion. The thermodynamic characteristics were obtained for sublimation, fusion, vaporization, and association in the vapor of GaCl₃ molecules. The enthalpies of formation and the absolute entropies of GaCl₃ in the liquid and gaseous phases and Ga₂Cl₆ in the gaseous phase were calculated using literature data. Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 7, pp. 1266–1269, July, 2007.