Thermoelectric performance in pseudo-ternary (PbTe)0.95-x(Sb2Se3)x(PbS)0.05 system with ultra-low thermal conductivity via multi-scale phonon scattering

Among the intermediate temperature (500–900 K) thermoelectric materials, both the p- and n-type lead telluride (PbTe) compounds have attracted extensive interests. Till date various approaches were adopted to enhance the thermoelectric performance of n-type PbTe-based materials as they show greater potential space for further improvement compared to p-type ones. Herein, a pseudo-ternary n-type (PbTe)_0.95-x(Sb₂Se₃)_x(PbS)_0.05 system was designed and a large value of ZT = 1.61 at 850 K in case of x = 0.01 was achieved. Two factors are responsible for the improved thermoelectric performance. The incorporation of lead sulfide is the key factor to maintain a high level of power factor above 700 K and the multi-scale hierarchical architectures yield ultra-low thermal conductivity.     

Static displacement of a guest atom in filled skutterudites MFe<Subscript>4</Subscript>Sb<Subscript>12</Subscript> (M = La,Ca, Na)

The properties of filled skutterudites MFe₄Sb₁₂ (M = La, Ca, Na) have been analyzed using the nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) methods. Two lines have been observed on the ¹³⁹La NMR spectrum of the LaFe₄Sb₁₂ compound and a substructure has been revealed in the ¹²¹Sb and ¹²³Sb lines in the NQR spectra of LaFe₄Sb₁₂ and CaFe₄Sb₁₂. The concept of the partial static displacement of guest atoms (M) in LaFe₄Sb₁₂ and CaFe₄Sb₁₂ has been proposed. The ab initio calculations confirm this assumption as well as give the displacement of a guest atom and indicate the absence of the splitting of the ¹³⁹La NMR line in the LaFe₄Sb₁₂ spectrum.     

Spin fluctuations in the skutterudite compound LaFe<Subscript>4</Subscript>Sb<Subscript>12</Subscript>

We report transport, magnetic and thermodynamic properties of the skutterudite compound LaFe₄Sb₁₂. The basic features are a large magnetic susceptibility χ(T), and large electronic coefficient γ of the heat capacity. In particular, a T^1.35, T^1.7, and T^-2/3 temperature dependence of the magnetic susceptibility χ(T), resistivity ρ(T), and Grüneisen parameter Γ(T), respectively, is found at low temperature. An overall understanding of these physical properties is achieved, assuming that LaFe₄Sb₁₂ is a non-Fermi liquid system close to a ferromagnetic quantum critical point, with a spin fluctuation temperature T_sf=50±15 K.     

Superconductivity induced by doping Ru in SrFe2−xRuxAs2

Using one-step solid state reaction method, we have successfully synthesized the superconductor SrFe_1−xRu_xAs. X-ray diffraction indicates that the material has formed the ThCr₂Si₂-type structure with a space group I4/mmm. The systematic evolution of the lattice constants demonstrates that the Fe ions are successfully replaced by the Ru. By increasing the doping content of Ru, the spin-density-wave (SDW) transition in the parent compound is suppressed and superconductivity emerges. The maximum superconducting transition temperature is found at 13.5 K with the doping level of x = 0.7. The temperature dependence of DC magnetization confirms superconducting transitions at around 12 K. Our results indicate that similar to non-isoelectronic substitution, isoelectronic substitution contributes to changes in both the carrier concentration and internal pressure, and superconductivity could be induced by isoelectronic substitution.     

Thermoelectric properties of n-type Sr x M y Co4Sb12 (M=Yb, Ba) double-filled skutterudites

Alkaline-earth (AE) and rare-earth (RE) atoms are usually used as void fillers in the caged compound CoSb₃ to improve the thermoelectric performance of the filled system. Polycrystalline single-filled Sr_0.21Co₄Sb₁₂, double-filled Sr _x Yb _y Co₄Sb₁₂, and Sr _x Ba _y Co₄Sb₁₂ skutterudites have been synthesized. Rietveld structure refinement confirms that both Sr and Yb occupy the Sb-icosaedron voids in skutterudite frame work. In this paper, we report the high-temperature thermoelectric properties including electrical conductivity, Seebeck coefficient, and thermal conductivity. Double filling of the Sr–Yb combinations shows a stronger suppression on lattice thermal conductivity than that of Sr–Ba combination. Furthermore, the double-filled Sr _x Yb _y Co₄Sb₁₂ skutterudites exhibit a much higher power factor than the Sr-filled system. The maximum power factor for Sr_0.22Yb_0.03Co₄Sb_12.12 reaches 41 μW cm⁻¹ K⁻² at room temperature and 57.5 μW cm⁻¹ K⁻² at 850 K, respectively. The enhanced thermoelectric figures of merit are 1.32 for Sr _x Yb _y Co₄Sb₁₂ and 1.22 for Sr _x Ba _y Co₄Sb₁₂ at 850 K, respectively.     

Synchrotron X-ray study of filled skutterudites CeFe4Sb12 and Ce0.8Fe3CoSb12

In situ synchrotron X-ray diffraction measurements are carried out on filled skutterudites CeFe₄Sb₁₂ and Ce_0.8Fe₃CoSb₁₂ up to 32 and 20 GPa, respectively, at room temperature. No phase transformation was observed for both samples in the pressure range. Fitting the pressure-volume data (up to 10 GPa) to the third-order Birch-Murnaghan equation of state, the bulk modulus B₀ is determined to be 74(4) GPa, with the pressure derivative B′₀=7(2) for CeFe₄Sb₁₂, and B₀=71(2) GPa and B′₀=8(2) for Ce_0.8Fe₃CoSb₁₂. The bulk moduli of filled skutterudites CeFe₄Sb₁₂ and Ce_0.8Fe₃CoSb₁₂ in our study are smaller than those from previous studies on unfilled skutterudite CoSb₃. The P-V curves of the unfilled skutterudite CoSb₃ and filled skutterudites Ce_yFe_4−xCo_xSb₁₂ showed good agreement, indicating that the Ce filling fraction and the replacement of Fe with Co have little effect on their compression behaviors.     

Temperature dependence of thermoelectric properties of Ni-doped CoSb3

Temperature dependences of the Hall coefficient, Hall mobility and thermoelectric properties of Ni-doped CoSb₃ have been characterized over the temperature range from 20 to 773 K. Ni-doped CoSb₃ is an n-type semiconductor and the conduction type changes from n-type to p-type at around 450 K. The temperature for the transition from n-type to p-type increased with increasing Ni content x. The Seebeck coefficient reaches a maximum value near the transition temperature. The electrical resistivity indicates that Co_1−xNi_xSb₃ is a typical semiconductor when x≤0.03 and a degenerate semiconductor when x>0.03. Thermal conductivity analyses show that the lattice component is predominant at lower temperatures and carrier and bipolar components become large at temperatures higher than the transition temperature. The thermoelectric figure of merit reaches a maximum value close to the transition temperature and the largest value, 4.67×10⁻⁴ K⁻¹ at 600 K, was obtained for x=0.05.     

过量Zn对β-Zn4Sb3热电性能影响的研究

采用真空熔融缓冷方法制备了单相β-Zn₄Sb₃以及含有过量Zn的β-Zn₄Sb₃块体热电材料.在300—700K的温度范围内测试了材料的电导率、Seebeck系数和热导率，研究了β-Zn₄Sb₃化合物中过量Zn的分布状态及其对材料热电性能的影响规律.结果表明：过量的Zn作为第二相较均匀的分布在β-Zn₄Sb₃的晶界上，随着Zn含量增加，材料电导率和热导率上升，Seebeck系数下降，Zn第二相的引入能有效提高材料的功率因子，Zn过量2at%的材料在700K时其ZT值达到1.10. 关键词： 4Sb₃')" href="#">β-Zn₄Sb₃ 电导率 Seebeck系数     

Synergistically Enhancing Thermoelectric Performance of n-Type PbTe with Indium Doping and Sulfur Alloying

To achieve high-performance n-type PbTe-based thermoelectric materials, this work provides a synergetic strategy to improve electrical transport property with indium (In) element doping and reduces thermal conductivity with sulfur (S) element alloying. In n-type PbTe, In doping can tune the carrier density in the whole working temperature range, causing the carrier density to increase from 2.18 × 10¹⁹ cm⁻³ at 300 K to 4.84 × 10¹⁹ cm⁻³ at 823 K in Pb_0.98In_0.005Sb_0.015Te. The optimized carrier density can further modulate electrical conductivity and Seebeck coefficient, finally contributing to a substantial increase of power factor, and a maximum power factor increase from 19.7 µW cm⁻¹ K⁻² in Pb_0.985Sb_0.015Te to 28.2 µW cm⁻¹ K⁻² in Pb_0.9775In_0.0075Sb_0.015Te. Based on the optimally In-doped PbTe, S alloying is introduced to suppress phonon propagation by forming a complete solid solution, which could effectively reduce lattice thermal conductivity and simultaneously benefit carrier mobility to maintain high power factor. With S alloying, the minimum lattice thermal conductivity decreases from 0.76 Wm⁻¹ K⁻¹ in Pb_0.985Sb_0.015Te to 0.42 Wm⁻¹ K⁻¹ in Pb_0.98In_0.005Sb_0.015Te_0.88S_0.12. Combining the advantages of both In doping and S alloying, the peak ZT value and averaged ZT (ZT_ave) (300–873 K) are boosted from 1.0 and 0.60 in Pb_0.985Sb_0.015Te to 1.4 and 0.87 in Pb_0.98In_0.005Sb_0.015Te_0.94S_0.06.     

Effect of bismuth on the electrical properties of Pb0.8Sn0.2Te thin films

D.C. conductivity and Hall coefficient studies were made on bismuth doped Pb_0.8Sn_0.2Te thin films in the temperature range 77–300 K. Hall coefficient and Hall mobility are found to decrease with the increase in doping density of bismuth. Films doped with even 0.3 at.% Bi changed fromp-type ton-type due to the donor action of bismuth in these films. Analysis of mobility-temperature data revealed that the lattice and defect scattering mechanisms are predominant in these films. Defect limited mobility is calculated for all the films and it is found to decrease with increase in doping concentration of bismuth suggesting the increase in defect density.     

Thermoelectric properties of indium-filled skutterudites prepared by combining solvothermal synthesis and melting

Indium-filled skutterudites with nominal compositions of In _x Co₄Sb₁₂ (x=0,0.1,0.2,0.3) were prepared by combining solvothermal synthesis and melting. The bulk samples were characterized by X-ray diffraction and scanning electron microscopy, respectively. The Seebeck coefficient, electrical conductivity, and thermal conductivity were measured from room temperature up to ∼773 K. Hall effect measurements were performed at room temperature. The thermoelectric properties of the samples were significantly influenced by filling In into CoSb₃. The dimensionless thermoelectric figure of merit, ZT, increased with increasing temperature and reached a maximum value of ∼0.79 for In_0.1Co₄Sb₁₂ at 573 K.     

Thermoelectric properties of SnzCo8Sb24 skutterudites

Sn-filled CoSb₃ skutterudite compounds were synthesized by the induction melting process. Formation of a single δ-phase of the synthesized materials was confirmed by X-ray diffraction analysis. The temperature dependences of the Seebeck coefficient, electrical resistivity and thermal conductivity were examined in the temperature range of 300-700 K. Positive Seebeck and Hall coefficients confirmed p-type conductivity. Electrical resistivity increased with increasing temperature, which shows that the Sn-filled CoSb₃ skutterudite is a degenerate semiconductor. The thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. The lowest thermal conductivity was achieved in the composition of Sn_0.25Co₈Sb₂₄.     

Anomalous increase of the thermopower and thermoelectric figure of merit in Ga-doped <Emphasis Type="Italic">p</Emphasis>-(Bi<Subscript>0.5</Subscript>Sb<Subscript>0.5</Subscript>)<Subscript>2</Subscript>Te<Subscript>3</Subscript> single crystals

The effect of Ga doping on the temperature dependences (5 K ≤ T ≤ 300 K) of the Seebeck coefficient α, electrical conductivity σ, thermal conductivity coefficient κ, and thermoelectric figure of merit Z of p-(Bi_0.5Sb_0.5)₂Te₃ single crystals has been investigated. It has been shown that, upon Ga doping, the hole concentration decreases, the Seebeck coefficient increases, the electrical conductivity decreases, and the thermoelectric figure of merit increases. The observed variations in the Seebeck coefficient cannot be completely explained by the decrease in the hole concentration and indicate a noticeable variation in the density of states due to the Ga doping.     

Photoluminescence properties of thin nitrogen- and phosphorus-doped ZnO films fabricated using pulsed laser deposition

The production of n- and p-type high-quality film structures is a foreground task in tackling the problem of growing the light-emitting p-n junctions based on zinc oxide. The ZnO:N and ZnO:P thin-film samples are produced from ceramic targets using the pulsed laser deposition. Zn₃N₂, MgO, and Zn₃P₂ are introduced in the ZnO ceramic targets for the fabrication of the p-type ZnO films. Gases O₂ and N₂O are used as buffer gases. The thermal annealing of the ZnO films is employed. The resistance and photoluminescence (PL) spectra of the ZnO films are measured prior to and after annealing. The dependence of the ZnO PL peak amplitude and position prior to and after annealing on the level of doping with nitrogen and phosphorus is established. The PL characteristics of the films are studied at cw optical excitation using a He-Cd laser with a radiation wavelength of 325 nm. The PL spectra in the interval 300–700 nm are recorded by an HR4000 Ocean Optics spectrometer in the temperature range 10–400 K. The effect of the conditions for the film deposition on the PL spectra is analyzed. The effect of the N- and P-doping level of the ZnO films on the PL intensity of the films and the position of the PL bands in the UV region is investigated. The short-wavelength (250–400 nm) transmission spectra of the ZnO:P films are measured. The effect of the P-doping level on the band gap of the ZnO films is studied.     

Positron lifetime measurements inn- andp-type silicon

Positron lifetime measurements were carried out in four different samples of silicon, namelyn-type (P-doped) 75 Ωcm,n-type (Sb-doped) 0.018 Ωcm,p-type (B-doped) 60 Ωcm andp-type (B-doped) 0.02 Ωcm. The measurements were made at room temperature and at 77K. A positron lifetime of τ₁=(230±2) psec was found for all samples, independant of dopant or temperature. Paper A 17 presented at 3 rd Internat'l Conf. Positron Annihilation. Otaniemi, Finland (August 1973).     

First principles calculations of Sr-based fluoroperovskite compounds under applied pressure

The structural, electronic and thermoelectric properties of SrXF₃ (X?=?Li, Na, K, Rb) compounds are performed using first principle calculations. The mBJ-GGA method has been considered to obtain accurate band gaps. The present compounds are found to be thermodynamically stable under 0?GPa and 10?GPa. This stability has been determined using the standard enthalypy of formation. The band structures of the compounds display direct band-gap (Γ-Γ). The band gap has slightly increased for almost studied compounds under 10?GPa. The Boltzmann transport calculations are used to calculate and explain the thermoelectric properties as a function of temperature within the range 20–1500?K. The majority charge carriers of SrXF₃ compounds are holes rather than electrons. Under 10 GP pressure the SrLiF₃ compound is shifted from n-type to p-type doping, whereas SrKF₃ and SrRbF₃ are shifted from p-type to n-type. SrNaF₃ has p-type doping character under 0?GPa and 10?GPa. The Seebeck coeffiecient is found to decrease, whereas σ/τ and S² σ/τ increase for higher temperature. According to the figure of merit and the high S² σ/τ values for SrXF₃, promising thermoelectric applications are expected for the present compounds.     

Thermoelectric properties and electronic structure of Te-doped CoSb3 compounds

Co₄Sb_12−xTe_x compounds were prepared by mechanical alloying combined with cold isostatic pressing, and the effects of Te doping on the thermoelectric properties were studied. The electronic structure of Te-doped and undoped CoSb₃ compounds has been calculated using the first-principles plane-wave pseudo-potential based on density functional theory. The experimental and calculated results show that the value of the solution limit x of Te in Co₄Sb_12−xTe_x compounds is between 0.5 and 0.7. The Fermi surface of CoSb₃ is located between the conduction band and the valence band, and its electrical resistivity decreases with increasing temperature. The density of states is mainly composed of Co 3d and Sb 5p electrons for intrinsic CoSb₃.The Fermi surface of Te-doped compounds moves to the conduction band and its electrical resistivity increases with increasing temperature, exhibiting n-type degenerated semiconductor character. Under the conditions of the experiment, the maximum value 2.67 mW/m K² of the power factor for Co₄Sb_11.7Te_0.3 is obtained at 600 K; this is about 14 times higher than that of CoSb₃.     

The studies of high-temperature and short-time annealing,phase transition process,and magnetic property for LaFe11.7Si1.3 compound

The high-temperature phase transition is analyzed according to the DSC of as-cast LaFe_11.7 Si_1.3 compound and the X-ray patterns of LaFe_11.7Si_1.3 compounds prepared by high-temperature and short-time annealing. Large amount of 1:13 phase begins to appear in LaFe_11.7Si_1.3 compound annealed near the melting point of LaFeSi phase (about 1422?K). When the annealing temperature is close to the temperature of peritectic reaction (about 1497?K), the speed of 1:13 phase formation is the fastest. The phase relation and microstructure of the LaFe_11.7Si_1.3 compounds annealed at 1523?K (5?h), 1373?K (2?h)?+?1523?K (5?h), and 1523?K (7?h) +1373?K (2?h) show that longer time annealing near peritectic reaction is helpful to decrease the impurity phases. For studying the influence of different high-temperature and short-time annealing on magnetic property, the Curie temperature, thermal, and magnetic hystereses, and the magnetocaloric effect of LaFe_11.7Si_1.3 compound annealed at three different temperatures are also investigated. Three compounds all keep the first order of magnetic transition behavior. The maximal magnetic entropy change ΔS_M (T, H) of the samples is 12.9, 16.04, and 23.8?J?kg^?1?K^?1 under a magnetic field of 0–2?T, respectively.     

Ga填充n型方钴矿化合物的结构及热电性能

用熔融退火结合放电等离子烧结(SPS)技术制备了具有不同Ga填充含量的Ga_xCo₄Sb₁₂方钴矿化合物,研究了不同Ga含量对其热电传输特性的影响规律. Rietveld结构解析表明,Ga占据晶体学2a空洞位置,Ga填充上限约为0.22,当Ga的名义组成x≤0.25时,样品的电导率、室温载流子浓度N_p随Ga含量的增加而增加,Seebeck系数随Ga含量的增加而减小. 室温下霍尔测试表明,每一个Ga授予框架0.9个电子,比Ga的氧化价态Ga³⁺小得多. 由于Ga离子半径相对较小,致使Ga填充方钴矿化合物的热导率κ及晶格热导率κ_L较其他元素填充的方钴矿化合物低. 当x＝0.22时对应的样品在300K时的热导率和晶格热导率分别为3.05Wm^-1·K^-1和 2.86Wm^-1·K^-1.在600K下Ga_0.22Co_4.0Sb_12.0样品晶格热导率达到最小,为1.83Wm^-1·K^-1,最大热电优值Z,在560K处达1.31×10^-3K^-1. 关键词： skutterudite化合物 Ga原子填充 结构 热电性能     

The effect of doping by IV-family elements on the electronic structure and electrical characteristics of Sb2O5

The electronic structures of doped Sb₂O₅ by IV-family elements (Si, Ge and Sn) were examined using the density function theory (DFT). Density of states (DOSs) results showed that the substituted IV-family elements act as acceptors in Sb₂O₅. Partial DOSs indicates that by substituting Ge(Ge _Sb ) or Sn(Sn _Sb ), there may be a larger contribution to the total DOSs near E _F than by substituting Si, which suggests that doping Ge or Sn in Sb₂O₅ produces better ptype doping compared to doping Si. Formation energy results show that IV-family elements are more likely to exist in the substituted position rather than in the interstitial position in Sb₂O₅, decreasing any self-compensation effect and making it easier for IV-family elements to realize ptype doping in Sb₂O₅. Ionization energy results show that Ge _Sb or SnSb, two among the three impurities considered, act as shallow acceptors in Sb₂O₅, thus producing a higher concentration of holes.