硫增感对立方体AgCl微晶光电子衰减影响的动力学研究

本工作利用微波吸收介电谱技术检测了硫增感立方体氯化银微晶光电子的衰减时间谱,并根据实验结果建立了硫增感氯化银微晶的动力学模型,通过计算机求解由此模型得到的光电子衰减动力学方程,得到了不同增感时间下电子陷阱的浓度和深度,发现随增感时间的增加,电子陷阱的深度保持不变(0.201eV),而陷阱的浓度发生了变化,即在增感时间为75 min时电子陷阱的浓度为7.5×10-6;在增感时间为60 min时电子陷阱的浓度为3×10-6,这些结论对于其它晶体特性的研究具有参考价值.     

Electrical,optical and photoconductive properties of Poly(dibenzo‐18‐crown‐6)

To investigate the energy levels, absorption bands, band gap, dominant transport mechanisms, recombination mechanisms and the free carrier life time behavior of poly‐dibenzo‐18‐crown‐6, poly‐DB18C6, films, the dark electrical conductivity in the temperature range of 200‐550 K, the absorbance and photocurrent spectra, the photocurrent –illumination intensity and time dependence at 300 K were studied. The dark electrical conductivity measurements revealed the existence of three energy levels located at 0.93, 0.32 and 0.76 eV below the tails of the conduction band. The main transport mechanism in the dark was found to be due to the thermal excitation of charge carriers and the variable range hopping above and below 260 K, respectively. The photocurrent and absorbance spectra reflect a band gap of 3.9 eV. The photocurrent ‐illumination intensity dependence reflects the sublinear, linear and supralinear characters indicating the decrease, remaining constant and increase in the free electron life time that in turn show the bimolecular, strong and very strong recombination characters at the surface under the application of low, moderate and high illumination intensity, respectively. A response time of 25.6 s was calculated from the decay of I_ph‐time dependence. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoelectrical properties of crystalline titanium dioxide thin films after thermo‐annealing

This paper reports the photoelectrical properties of sol gel derived titanium dioxide (TiO₂) thin films annealed at different temperatures (425‐900°C). The structure of the as‐grown film was found to be amorphous and it transforms to crystalline upon annealing. The trap levels are studied by thermally stimulated current (TSC) measurements. A single trap level with activation energy of 1.5 eV was identified. The steady state and transient photocurrent was measured and the results are discussed on the basis of structural transformation. The photocurrent was found to be maximum for the films annealed at 425°C and further it decreases with annealing at higher temperatures. The photoconduction parameters such as carrier lifetime, lifetime decay constant and photosensitivity were calculated and the results are discussed as a function of annealing temperature. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoconductivity of rare-earth-doped (CdSe,ZnS)

Photoconductivity rise and decay curves of (CdSe, ZnS) doped with La and Dy separately are investigated as a function of ambient temperature and pressure, electrode material and cell thickness. Using a number of metal electrodes Fe is found to give maximum I_PC/I_DC ratio for (CdSe, ZnS): La and Cu for (CdSe, ZnS): Dy. Due to change in temperature, maximum I_DC and I_PC are found to 70 °C. A possible mechanism is proposed for thermal and photo-excitations in terms of these results. At lower ambient pressure the photocurrent is found to be low. Cell thickness effect also shows changes in I_PC.     

Luminescent properties of CsI single crystals grown from the melt treated with EuI2

CsI single crystals treated with EuI₂ as a scavenger are grown and their radioluminescence spectra and scintillation light decay curves are obtained. Addition of the quantities of the scavenger comparable with the total concentration of the oxygen‐containing admixtures in the melt results in complete destruction of the latter. In its turn, this causes the disappearance of the band with a maximum at 2.8 eV in the radioluminescence spectrum and decreases the fraction of the slow 2 µs‐component to 0.01. The addition of larger quantities of EuI₂ leads to the appearance of a wide band with the maximum at 2.8 eV characterized by a decay constant of 2 µs; its intensity increases with the EuI₂ concentration. The maximum ratio of two faster components with the decay constants equal to 7 and 30 ns approaches 0.58:0.41 at EuI₂ concentration in CsI melt equal to 0.01 mol·kg⁻¹.     

空位缺陷对单层2H-MoTe2光电效应的第一性原理研究

MoTe₂由于其类石墨烯的堆叠方式和丰富的相结构而引起科研人员的广泛研究,特别是合适的禁带宽度使其在光电器件领域有着光明的应用前景。基于非平衡格林函数-密度泛函理论,通过第一性原理计算方法,研究了不同原子空位缺陷对单层2H-MoTe₂光电效应的影响。结果表明:不同空位缺陷下2H-MoTe₂器件的光电流函数与唯象理论相符合。光子能量在1.0~2.8 eV时,2Te空位缺陷对单层2H-MoTe₂的光电流有显著提升,特别是在光子能量2.6 eV时获得所有器件的最大光电流。利用能带结构发现不同原子空位缺陷都导致单层2H-MoTe₂的价带向高能级处偏移,而导带向低能级处偏移,减小了带隙,在线性偏振光的照射下有利于电子从价带跃迁到导带形成光电流。同时发现1Te空位缺陷和Mo空位缺陷的单层2H-MoTe₂在远离费米能级处具有相似的能带结构,从而导致在光子能量大于1.6 eV时,1Te空位和Mo空位器件的光电流随光子能量的变化拥有相同的变化趋势。这些计算结果可以用于指导MoTe₂光电器件的设计。     

单层2H-MoTe2光电效应的理论研究

材料的禁带宽度是影响光电探测器探测范围的重要因素.单层2H-MoTe2因具有合适的禁带宽度引起了科研人员广泛的研究兴趣.本文基于非平衡态格林函数-密度泛函理论,采用第一性原理方法,研究了单层2H-MoTe2的光电效应.结果表明:在线性偏振光照射下,MoTe2产生的光电流函数与唯象理论相吻合;在光子能量范围1.6～1.8...     

Characterization of GaN using thermally stimulated current and photocurrent spectroscopies and its application to UV detectors

Deep levels in insulating GaN grown by metalorganic vapor phase epitaxy (MOVPE) have been studied using thermally stimulated current (TSC) and photocurrent (PC) spectroscopies. Five main levels (0.11, 0.24, 0.36, 0.53 and 0.62 eV) were observed by TSC measurements in the as-grown undoped GaN. PC measurements showed three deep levels located within bandgap at 1.32, 1.70 and 2.36 eV, respectively. We found that three of the levels, located at 0.24, 0.36 and 0.53 eV, were eliminated by annealing at 1000°C under N₂ for six hours, whereas the 0.62 eV level density increased after annealing. In addition, both the responsivity and on/off times of GaN metal-semiconductor-metal (M---S---M) detectors degrade with increasing concentration of the 0.62 eV trap. We have also found that this trap can be effectively reduced by increasing the ammonia flow rate during the MOVPE growth. Accordingly, a high responsivity ( 3200 A/W) UV detector with an improved response time, from 8 to 0.4 ms, was fabricated on GaN grown under the optimized conditions.     

Optoelectronical properties of polycrystalline β ‐GaSe thin films

Polycrystalline β ‐GaSe thin films were obtained by the thermal evaporation of GaSe crystals onto glass substrates kept at 300 °C under a pressure of 10^–5 Torr. The transmittance and reflectance of these films was measured in the incident photon energy range of 1.1–3.70 eV. The absorption coefficient spectral analysis in the sharp absorption region revealed a direct allowed transitions band gap of 1.83 eV. The data analysis allowed the identification of the dispersive optical parameters by calculating the refractive index in the wavelength region of 620–1100 nm. In addition, the photocurrent of the samples was studied as function of incident illumination‐intensity and temperature. The photocurrent is found to exhibit sublinear and supralinear character above and below 270 K, respectively. The temperature dependent photocurrent data analysis allowed the calculation of photocurrent activation energies as 603, 119 and 45 meV being dominant in the temperature regions of 250–300 K, 180–240 K and 80‐160 K, respectively. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

不同合成方法对LiMgPO4∶Dy发光性能的影响

分别采用高温固相法和溶胶凝胶法合成了LiMgPO₄和LiMgPO₄∶Dy,通过热重-差热热分析仪、X射线衍射仪、傅里叶红外光谱仪、场发射高倍扫描电镜、紫外可见分光光度计和荧光分光光度计研究了不同合成方法对LiMgPO₄∶Dy晶体结构、形貌和发光性能的影响。结果表明,溶胶凝胶法的最低合成温度为750℃且晶体中几乎不存在其他晶相,而高温固相法在950℃合成的晶体中仍然存在少量Mg₃(PO₄)₂晶相;相比于高温固相法,溶胶凝胶法合成的样品形貌比较规则;两种方法合成的样品在可见光区域光吸收能力差,而在紫外区域高温固相法合成的样品光吸收能力明显较高;高温固相法合成的LiMgPO₄∶Dy光学带隙范围为3.76～3.93 eV,溶胶凝胶法合成的LiMgPO₄∶Dy光学带隙范围为3.85～3.94 eV,合成方法对样品的光学带隙影响较小。LiMgPO₄∶Dy的最佳激发波长为350 nm,最强发射峰位于579...     

Crystal Data,Photoconductivity and Carrier Scattering Mechanisms in CuIn5S8 Single Crystals

The X‐ray diffraction has revealed that CuIn₅S₈ is a single phase crystal of cubic spinel structure. The value of the unit cell parameter for this crystal is 1.06736 nm. The crystal is assigned to the conventional space group Fd3m. The photocurrent is found to have the characteristic of monomolecular and bimolecular recombination at low and high illumination intensities, respectively. The electrical resistivity and Hall effect of CuIn₅S₈ crystals are measured in the temperature range of 50‐400 K. The crystals are found to be intrinsic and extrinsic above and below 300 K, respectively. An energy band gap of ∼1.35 eV at 0 K, a carrier effective mass of 0.2 m₀ , an acceptor to donor concentration ratio of 0.9, an acoustic phonon deformation potential of 10 eV and a nonpolar optical phonon deformation potential of 15 eV are identified from the resistivity and Hall measurements. The Hall mobility data are analyzed assuming the carrier scattering by polar optical phonons, acoustic combined with nonpolar optical phonons, and ionized impurities.     

基于第一性原理的掺杂单层WS2的光电效应

基于非平衡态格林函数-密度泛函理论,采用第一性原理方法,计算了VA族元素(N、P、As或Sb)掺杂单层WS2的光电效应,并解释了掺杂提高光电效应的微观机理.结果表明:在线性极化光照射下,单层WS2中可以产生光电流.由于掺杂降低了单层WS2的空间反演对称性,导致N、P、As或Sb分别掺杂的单层WS2的光照中心区产生的光电...     

Electrical properties of a-Ge-Se-In thin films

Steady state and transient photoconductivity has been measured on Ge₂₀Se_80−xIn_x (x = 0, 5, 10, 15, 20) vacuum evaporated thin films. Study of temperature dependent dark conductivity σ_d and photoconductivity σ_ph measurements in the temperature range 303-375 K, shows that the conduction in this glass is through an activated process having single activation energy. The activation energy value of photoconduction is smaller in comparison to activation energy in dark. The photosensitivity shows a maximum value at 10 at.% of In concentration. This is attributed to the decrease in the density of defect states of Ge-Se alloy with increase of In content. The results of intensity dependent steady state photoconductivity σ_ph follow a power law with intensity (F), i.e. σ_ph α F^γ where the value of power γ lies between 0.5 and 1.0, suggesting bimolecular recombination. Rise and decay of photocurrent for different concentration of In shows that photocurrent rises monotonically to the steady state value and the decay of photocurrent is also very fast. An attempt has been made to explain the results on the basis of defects and density of states.     

Photoconductivity and absorption in amorphous Si

The paper deals with photoconductivity and absorption in aSi specimens, prepared mainly by the decomposition of silane in a glow discharge. Substrate temperatures, T_d, between 300 K and 650 K were used during deposition. The normalised photoresponse was measured at room temperature as a function of photon energy and T_d in a spectral range from 0.5 eV to 3 eV. The absorption coefficient was determined for evaporated, sputtered and glow discharge specimens.The main features of the results are in agreement with conclusions drawn from previous electrical transport and field effect measurements and can be interpreted on the basis of the proposed model for the localised state distribution. It is confirmed that ?_c??_v is 1.5 to 1.6 eV, and that there is a local density of state maximum at about 1.2 eV below ?_c. At room temperature the steady photocurrent is carried predominantly by electrons in states above ?_c, whether excitation is from localized or extended states. Specimens prepared at T_d > 500 K are highly photosensitive, with electron recombination lifetimes, τ, of up to 10^?5s. Rise and decay times of the signal lie in the millisecond range. For T_d < 500 K there is a drastic decrease in τ, which falls to 10^?11 s at $\text{T}{}_{\mathrm{<mtext>d</mtext>}}\text{? 300}\text{K}$ and is even less for evaporated specimens. These results are discussed in some detail.     

Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure

Highly c-axis-oriented ZnO films were successfully deposited on the nucleation sides of freestanding diamond films by RF reactive magnetron sputtering. I–V characteristics of ultraviolet (UV) photodetectors with ZnO/diamond structure were studied and a significant photoresponse was observed under UV light illumination. The dark-current and the photocurrent of the ZnO photodetectors were relative to the grain size and the quality of ZnO films. For the photodetector with a bigger grain size, a weaker dark current and a stronger photocurrent were obtained under 10 V bias voltage. The photocurrent rise and decay process confirmed the carrier-trapping effect.     

The temperature dependence f photoconductivity in a-Si

The photoconductivity and its dependence on light intensity have been investigated in a-Si as a function of temperature between 100 and 500 K. In most experiments a photon energy of 2 eV was used. Specimens were deposited on to a substrate held at a temperature between 300 and 600 K by the r.f. decomposition of silane. Graphs of the photocurrent versus 1/T show a photoconductive maximum and the general features of the curves are similar to those found for the chalcogenide glasses. The main emphasis of the paper lies in the interpretation of the results in the light of the information on transport properties and the density of state distribution obtained from drift mobility and field effect experiments. It is shown that recombination takes place predominantly between two groups of localized states, which have been identified in the previous work. The initial state at ?_A is situated about 0.18 eV below ge_C in the electron tail states, the final state lies in a density of state maximum, 0.4 eV above ?_V. Above about 250 K, the photocurrent is carried by electrons in extended states, but below this temperature transport is by phonon assisted hopping through states near ?_A. A recombination process involving two states of a structural defect centre is discussed on the basis of the results and appears to be a feasible interpretation.     

Flux's influence on the luminescent properties of europium and dysprosium codoped melilite long afterglow phosphor

The europium (Eu^2 +) and dysprosium (Dy^3 +) codoped melilite (Sr₂MgSi₂O₇) long afterglow phosphors are synthesized with H₃BO₃ and Li₂CO₃ fluxes, respectively. The XRD analysis demonstrates similar crystal structure and crystal size of the samples. The SEM presents a better crystallization of samples with flux, other than the one without flux. The excitation and emission spectra of the samples are similar but the decay processes of the afterglow are different. The afterglow properties are enhanced by H₃BO₃ while they are suppressed by Li₂CO₃, due to the different concentrations and depths of traps. The sample without flux has a low trap concentration because of the greater surface. Li⁺ ions reduce the concentration of Sr^2 + vacancies and then the trap depth becomes smaller. B^3 + ions break the potential balance in oxygen vacancies then the attraction to trapped electron is enhanced.     

Luminescence of GeO2 glass, rutile-like and α-quartz-like crystals

The luminescence of GeO₂ rutile-like crystals was studied. Crystals were grown from a melt of germanium dioxide and sodium bicarbonate mixture. Luminescence of the crystal was compared with that of sodium germanate glasses produced in reduced and oxidized conditions. A luminescence band at 2.3 eV was observed under N₂ laser (337 nm). At higher excitation photon energies and X-ray excitation an additional band at 3 eV appears in luminescence. The band at 2.3 eV possesses intra-center decay time constant about 100 μs at 290 K and about 200 μs at low temperature. Analogous luminescence was obtained in reduced sodium germanate glasses. No luminescence was observed in oxidized glasses under nitrogen laser, therefore the luminescence of rutile-like crystal and reduced sodium germanate glass was ascribed to oxygen-deficient luminescence center modified by sodium. The band at 2.3 eV could be ascribed to triplet-singlet transition of this center, whereas the band at 3 eV, possessing decay about 0.2 μs, could be ascribed to singlet-singlet transitions. Both bands could be excited in recombination process with decay kinetics determined by traps, when excitation realized by ArF laser or ionizing irradiation with X-ray or electron beam. Another luminescence band at 3.9 eV in GeO₂ rutile-like crystal was obtained under ArF laser in the range 100-15 K. Damaging e-beam irradiation of GeO₂ crystal with α-quartz structure induces similar luminescence band.     

Photoluminescence characterization of sol–gel prepared low density silica samples

By exciting with synchrotron radiation in the 4–10 eV range the emission properties of sol–gel synthesized porous silica at room temperature and at 8 K are investigated. The modifications of the ultraviolet emission in the range 3.7–4.2 eV excited at different energies (5.64, 6.20, 6.53, and 6.89 eV) support the hypothesis of the contribution of two emitting centers. In particular the two emissions are spectrally resolved when exciting at 5.64 eV and a blue shift of the emission peak is reported as the excitation energy increases. The analysis of the decay times indicates that the two centers are temporally resolved with the 5.64 eV excitation both at room temperature and at 8 K and allows to estimate lifetimes of about 3 and 18 ns. When exciting at 6.53 eV, the larger relative contribution of the 4.0 eV band does not allow to efficiently resolve the two decay times and the estimated life time of the 3.8 eV band is shortened.     

Spectral dependence of transient photocurrent quantum efficiency in amorphous arsenic triselenide

The relative magnitude of the quantum efficiency for photogeneration of mobile carriers in a-As₂Se₃ is measured using transient photocurrent. The quantum efficiency is quite constant for photon energies above 1.4eV, but falls approximately exponentially with decreasing photon energy for lower energies.