Effect of the magnetic flux trapping upon the temperature dependence of the flow stress change at the superconducting transition

The effect of the superconducting transition on the flow stress in single and polycrystals of Pb-In and Pb-Sn alloys has been studied in the temperature range 1.8 K to T_e. Unlike earlier efforts, these experiments involved investigation of the magnetic flux trapping. Two types of temperature dependences of the magnetic flux trapping, B₀(T), were revealed. In Pb-1.9 at.% In and Pb-6 at.% Sn alloys (subjected to various thermal treatment), B₀ monotonically rises with lowering temperature. In Pb-1.8, 3 at.% Sn single crystals the flux trapping arises at high strains (> 50%) and low temperatures (<2.5 K). In this case B₀ magnitude depends on the strain rate. The difference in the B₀(T) behaviour is associated with dissimilar flux pinnig by pinning centres. The date on B₀(T) obtained give an insight into the two types of the Δσ(T) dependences; taking into account of the flux trapping allowed the Δσ values to be corrected, so that as a result, a single Δσ_SN(T) curve was obtained for all the alloys and structures studied.     

Absorption spectrum of Ni2+ doped in NH4Br single crystal

The optical absorption spectrum of Ni²⁺ doped in NH₄Br single crystals has been studied at room and liquid-air temperatures. The observed ambient bands at 6300, 11,600, 13,400, 18,500, and 20,000 cm^–1 have been assigned, respectively, to the transitions³ A ₂(F) ³ T ₂(F),³ T ₁(F),¹ E(D),¹ T ₂(D and³ T ₁(P). The crystal field parameters evaluated areD _q=630 cm^–1,B=850 cm^–1, andC=3600 cm^–1. In assigning the location of Ni²⁺ ions within the lattice, evaluations are made of the (limited) extant comparable data. It is then concluded that Ni²⁺ enters an octahedral interstitial, rather than a substitutional, site. It is surrounded by four bromide ions, in a plane, with two polarized water molecules at the opposing fifth and sixth positions.     

Influence of structural ordering on ion transport in BiO<Subscript>0.5</Subscript>F<Subscript>2.0</Subscript> bismuth oxyfluoride

The influence of structural defect ordering on ionic conductivity (σ) in the cubic (fluorite) modification of BiO_0.5F_2.0 oxyfluoride has been investigated. Upon cooling, the disordered fluorite BiO_0.5F_2.0 phase undergoes a reversible transition to an ordered form. This transition manifests itself as a jump in the temperature dependence σ(T) near 583 ± 6 K. The ordering of structural defects deteriorates the characteristics of ion transport in BiO_0.5F_2.0. At 500 K, the σ value for the ordered phase is 1 × 10⁻⁴ S/cm, whereas an extrapolation to this temperature for the disordered phase gives σ = 4 × 10⁻⁴ S/cm.     

The Dielectric Anomaly Near the Transition from the Smectic A* to Smectic C* Phase and Visco-Elastic Properties of Ferroelectric Liquid Crystals

A pyro-electric technique is developed which allows the measurement of the dielectric response near the A*-C* phase transition in ferroelectric liquid crystals. The temperature dependence of the elastic modulus K _θ(T) corresponding to the molecular tilt in smectic layers is calculated from the experimental data. Direct pyro-electric measurements of the relaxation time for the spontaneous polarization P _s and the data on K _θ(T) allow us to calculate the temperature behaviour of the twist-viscosity γ₁(T) for the smectic C* phase. The curves γ₁(T) are compared for the smectic C* and the nematic phase of the same compound and the dependence of the twist viscosity on the molecular tilt angle in the C* phase is investigated. The results of the dielectic measurements are discussed in terms of the mean-field approximation.     

Estimation of the characteristic parameters of the multilayered film model using the patterson differential function

The possibility of estimating the layered film structural parameters by constructing the autocorrelation function P _F (z) (referred to as the Patterson differential function) for the derivative dρ/dz of electron density along the normal to the sample surface has been considered. An analytical expression P _F (z) is presented for a multilayered film within the box model of the electron density profile. The possibilities of selecting structural information about layered films by analyzing the features of this function are demonstrated by model and real examples, in particular, by applying the method of shifted systems of peaks for the function P _F (z).     

Absorption spectrum of octahedral CoCl4(H2O)2 units in [(CH3)3NH]CoCl3·2H2O single crystal

The optical absorption spectrum of the octahedral moiety CoCl₄(H₂O)₂ in single crystal [(CH₃)₃NH]CoCl₃·2H₂O has been studied at room and liquidair temperatures. The observed ambient bands at 6800, 16,300, and 19,000 cm^–1 have been assigned, respectively, to the transitions⁴ T ₁(F) ⁴ T ₂(F),⁴ A ₂(F), and⁴ T ₁ (P). The crystal field parameters evaluated areD _q =B=850 cm^–1, andC=4.63B. At liquid-air temperatures the⁴ T ₁(P) band is seen to split into the expected four components ₇, ₈, ₈, and ₆, due to spin-orbit coupling, and the coupling coefficient was computed to be 525 cm^–1.     

Crystallizaton Characteristics of the Alternating Tetrafluoroethylene-Ethylene Copolymer

The alternating tetrafluoroethylene-ethylene (TFE-E) copolymer has been studied with respect to its crystallization by using differential scanning calorimetry and optical microscopy. The value of the specific surface energy σ at the melt/crystal interface is calculated to be about 2 · 10⁻³ J/m². The nucleating activity Φ of TiO₂ particles introduced into TFE-E copolymer is estimated to be approximately 0.9. The temperature dependence of the nucleation rate and of the linear growth velocity are constructed in the whole region from the melting temperature T_m to the vitrification temperature T_g. The minimum cooling rate for the formation of a crystal-free TFE-E copolymer glass is calculated and its value amounts to 10⁴ K · min⁻¹.     

Effect of supersaturation on the crystallization of phenylbutazone polymorphs

The article describes the effect of degree of supersaturation, σ, on the crystallization of specific polymorphs of phenylbutazone from its methanolic solution at 20 °C. At low initial supersaturation, σ ≤ 2.0, the fraction of the metastable α polymorph in the crystallized product exceeds that of the δ polymorph, while at σ ≥ 5.0, the fraction of the stable δ polymorph increases in the crystallized product. The results are explained by the effect of supersaturation on the relative rates of nucleation and crystal growth of the polymorphs. Furthermore, the mechanism of nucleation and crystal growth also change with supersaturation. Supersaturated methanolic solutions of phenylbutazone exhibit a critical temperature at which the nucleation rates of the polymorphs decrease drastically. This effect is partly explained by the decreased mobility of phenylbutazone molecules at lower temperatures. Nucleation is most rapid when the crystallization temperature is close to the transition temperature, T_t(α ⟷ δ), between the polymorphs, α and δ. The nucleation rate decreases as the temperature difference between T_t(α ⟷ δ) and the crystallization temperature increases. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

On the reproducibility of the orientation distribution function of texture samples from pole figures (III). Relationship between the ODF f(g) and the reduced ODF f̃T(g)

The explicit relationship between the ODF f(g) and the reduced ODF f̃T(g) is given and discussed. For the general case of fibre textures the f̃T(g) ↔ f(g) problem does not disappear, but in the special case with G_A = D_∞f̃T(g) is identical with f(g).     

Determination of the diffusion coefficient of arsenic in Ga solution from growth rate measurements of LPG GaAs

On the basis of the LPE GaAs growth rate measurements in which we used current marks of time, the diffusion coefficient and the critical supercooling of arsenic in Ga solution by a semiempirical method was determined. Some knowledge of these parameters is indispensable for investigating the growth mechanism and kinetics of epitaxial layers from high temperature solutions. Taking into account the fact that the diffusion coefficient as a function of temperature is of the form D(T) = D₀ · exp (–B/T), the results were extrapolated in a range of temperatures 750–950°C typical for liquid epitaxy of GaAs.     

Characteristic temperature fields of crystal growth calculated with the aid of heat flow potentials

In order to grow monocrystals of larger and larger diameters, more detailed knowledge about the steady state temperature field and its effects on the growing crystal is needed. It can be acquired from experimental data only by means of a subtilized numerical analysis. A mathematical model based on closed-form solutions for the steady state cylindrical case is given. Using the so called “heat flow potential” defined in KIRCHHOFFS sense, any temperature dependence of the heat conductivity k can exactly be taken into account. It can be shown that the problem treated is linear and is generally of the Laplace type. So, the temperature field T(r, z) in cylindrical coordinates r, z can be calculated if the surface temperature function T(r₀, z), the shape of the growth interface and the temperature-dependent heat conductivity k(T) are known. Numerical examples of temperature fields of silicon crystal growth processes are presented.     

A new equation for the temperature dependence of density of saturated aqueous solutions of electrolytes

A new empirical three-parameter equation d = d₀ exp[β′(T – T₀)²] (where β′, d₀, and T₀ are constants for a salt) has been proposed to describe the dependence of density d (g/ml³) of saturated aqueous solutions of electrolytes on temperature T (K) in the whole range of temperature in which solubility increases or decreases with an increase in temperature.     

Optical Absorption Spectrum of Co2+ Ion Impurities in Lithium Sodium Potassium Sulphate Single Crystal

Optical absorption spectrum of Co²⁺ ions doped in lithium sodium potassium sulphate single crystal has been studied at room and liquid nitrogen temperatures. The observed bands are assigned as transitions from the ground ⁴T_1g(F) to various excited quartet and doublet levels of Co²⁺ ion in octahedral symmetry. The splitting in one of the bands at liquid nitrogen temperature has been explained as due to spin-orbit interaction. All the observed band positions have been fitted with the parameters B, C, D_q and ζ.     

Antisolvent crystallization of aqueous ammonium dihydrogen phosphate solutions by addition of acetone at different rates

Results of an investigation of in situ measurements of laser‐beam intensity I_s and I_m transmitted through aqueous ammonium dihydrogen phosphate (ADP) solutions saturated at 30 °C and water, respectively, and temperature T_s of solution and T_m of water during feeding of antisolvent acetone at different rates R_A, using an indigenously designed experimental setup, are presented and discussed. It was found that: (1) for the measurement of MSZW, defined as the maximum volume fraction of acetone content Δx_max in the solution, obtained from temperature measurements are more reliable than transmitted laser‐beam intensity measurements for solutions, (2) two minima ΔT_min1 and ΔT_min2 associated with endothermic reactions, separated by a maximum ΔT_max due to exothermic reactions appear in the plots of temperature difference ΔT = T_s−T_m against acetone feeding time t, and (3) in the ΔT(t) plots there are time intervals Δt of constant rates R_T of increase in ΔT of aqueous ADP solutions, and these values of R_T increase linearly with acetone feeding time rate R_A. The experimental data on the observed dependence of MSZW on antisolvent feeding rate R_A, the appearance of minima ΔT_min1 and ΔT_min2 and maximum ΔT_max and their dependence on R_A, and the relationship between R_T and R_A are discussed from consideration of processes of nucleation and growth of crystallites.     

Synthesis and crystal structure of low ferrialuminosilicate sanidine

Iron-containing potassium feldspar crystals are prepared using the hydrothermal synthesis in an alkaline medium at temperatures ranging from 500 to 52°C. The crystal structure of the synthetic potassium feldspar is refined [Ital Structures diffractometer, MoKαradiation, 1327 unique reflections with Fs>σ(F), anisotropic approximation, R(F) = 0.044]. It is established that, under the given preparation conditions, the synthesis leads to the formation of the monoclinic modification with the following unit-cell parameters: a = 8.655(7) Å, b = 13.101(9) Å, c = 7.250(8) Å, β = 116.02(2)°, space group C2/m, and Z = 4. The cation distribution over crystallographically inequivalent tetrahedral positions T(1) and T(2) is determined and justified using X-ray diffraction data. According to this distribution, the iron-containing potassium feldspar is assigned to the low ferrialuminosilicate sanidine. The proposed structural formula K _{A = 0.99}(Si_1.2Fe_0.5Al_0.3)_{ΣT(1) = 2}(Si_1.81Al_0.19)_{ΣT(2) = 2}O₈ agrees well with the data of the electron microprobe analysis. It is revealed that iron occupies the T(1) position and manifests itself as a majority rather than minority impurity element with respect to aluminum.     

Features in the photoluminescence line-shape of heavily Er-doped Ge–S–Ga glasses

Erbium doped chalcogenide glasses are of great interest in the integrated optoelectronic technology due to their Er³⁺ intra-4f emission at the standard telecommunication wavelength of 1.54 μm. In this paper, the photoluminescence (PL) of a series of (GeS₂)_x(Ga₂S₃)_100−x (x = 75 and 67) glasses doped with high amounts of Er₂S₃ (1.8, 2.1, 2.4 and 2.7 mol%) under excitation with 1064 nm light has been studied. A quenching PL effect at 1.22 аt.% Er-doped (GeS₂)₇₅(Ga₂S₃)₂₅ and 1.39 аt.% Er-doped (GeS₂)₆₇(Ga₂S₃)₃₃ glasses has been established. The relative changes in PL line-shape at around 1540 nm have been estimated by deconvoluting the spectra to Gaussian sub-bands centered at 1519 ± 1, 1537 ± 1, 1546 ± 1, 1555 ± 1 and 1566 ± 4 nm, which correspond to F₂₁, F₁₁, F₂₂, F₁₂ and F₁₃ transitions in the ⁴I_13/2 and ⁴I_15/2 energy levels and have intensity and manifestation that are strongly depend on the Er-doping level. The influence of gallium on the PL efficiency has been evaluated with a view to enhanced emission cross-section.     

Chemical Effects at the Deposition of Germanium onto Yttrium-Iron-Garnet Single Crystals

At the deposition of Ge onto YIG-crystals by uhv-evaporation a sharply limited temperature T_st was found with no further deposition above this point. Several experimental facts suggest the following model: incoming Ge atoms pick out oxygen atoms from the substrate and reevaporate as GeO. The step temperature T_st is defined by an equilibrium of the incoming Ge vapour rate, r_Ge, and the GeO evaporation rate. For r_Ge = 3 monolayers/sec we found T_st = 510°C.     

Nematic-Isotropic Transition in MBBA and its Mixtures with 4-Methoxybenzaldehyde: Applications to the Purity Control of Liquid Crystals

The nematic-isotropic transition temperatures of MBBA(1) + 4-methoxybenzaldehyde(2) mixtures (where MBBA=N(4-methoxybenylidene)-4-n-butylaniline) for 0  x₂  0.06 and additionally the transition enthalpy of pure MBBA were measured by a calorimetric method. Straight lines were found for the T¹(x₂) and Tⁿ(x₂) curves respectively where T¹ and Tⁿ are the upper and the lower limiting temperatures of the transition range for a given x₂. The results are compared with literature data on similar systems and confirm the wellknown rule that the decrease of the nematic-isotropic transition temperature with increasing x₂ depends more strongly on the size and the shape than on the polarity of component 2. From a plot of δT [tbnd] T¹ - Tⁿ against x₂ the mole fraction of impurity in the original sample can be extrapolated.     

Electrical properties of TiO2 thin films

The electrical properties of n-type titanium dioxide thin films deposited by magnetron-sputtering method have been investigated by temperature-dependent conductivity. We observed that the temperature dependence of the electrical conductivity of titanium dioxide films exhibits a crossover from T^?1/4 to T^?1/2 dependence in the temperature range between 80 and 110 K. Characteristic parameters describing conductivity, such as the characteristic temperature (T₀), hopping distance (R_hop), average hopping energy (Δ_hop), Coulomb gap (Δ_C), localization length (ξ) and density of states (N(E_F)), were determined, and their values were discussed within the models describing conductivity in TiO₂ thin films.