Precise and fast secondary ion mass spectrometry depth profiling of polymer materials with large Ar cluster ion beams

We demonstrate depth profiling of polymer materials by using large argon (Ar) cluster ion beams. In general, depth profiling with secondary ion mass spectrometry (SIMS) presents serious problems in organic materials, because the primary keV atomic ion beams often damage them and the molecular ion yields decrease with increasing incident ion fluence. Recently, we have found reduced damage of organic materials during sputtering with large gas cluster ions, and reported on the unique secondary ion emission of organic materials. Secondary ions from the polymer films were measured with a linear type time‐of‐flight (TOF) technique; the films were also etched with large Ar cluster ion beams. The mean cluster size of the primary ion beams was Ar₇₀₀ and incident energy was 5.5 keV. Although the primary ion fluence exceeded the static SIMS limit, the molecular ion intensities from the polymer films remained constant, indicating that irradiation with large Ar cluster ion beams rarely leads to damage accumulation on the surface of the films, and this characteristic is excellently suitable for SIMS depth profiling of organic materials. Copyright © 2009 John Wiley & Sons, Ltd.     

New horizons in sputter depth profiling inorganics with giant gas cluster sources: Niobium oxide thin films

X‐ray photoelectron spectroscopy is used to study a wide variety of material systems as a function of depth (“depth profiling”). Historically, Ar⁺ has been the primary ion of choice, but even at low kinetic energies, Ar⁺ ion beams can damage materials by creating, for example, nonstoichiometric oxides. Here, we show that the depth profiles of inorganic oxides can be greatly improved using Ar giant gas cluster beams. For NbO_x thin films, we demonstrate that using Ar_x⁺ (x = 1000‐2500) gas cluster beams with kinetic energies per projectile atom from 5 to 20 eV, there is significantly less preferential oxygen sputtering than 500 eV Ar⁺ sputtering leading to improvements in the measured steady state O/Nb ratio. However, there is significant sputter‐induced sample roughness. Depending on the experimental conditions, the surface roughness is up to 20× that of the initial NbO_x surface. In general, higher kinetic energies per rojectile atom (E/n) lead to higher sputter yields (Y/n) and less sputter‐induced roughness and consequently better quality depth profiles. We demonstrate that the best‐quality depth profiles are obtained by increasing the sample temperature; the chemical damage and the crater rms roughness is reduced. The best experimental conditions for depth profiling were found to be using a 20 keV Ar₂₅₀₀⁺ primary ion beam at a sample temperature of 44°C. At this temperature, there is no, or very little, reduction of the niobium oxide layer and the crater rms roughness is close to that of the original surface.     

Molecular depth profiling of multilayer structures of organic semiconductor materials by secondary ion mass spectrometry with large argon cluster ion beams

In this study, we present molecular depth profiling of multilayer structures composed of organic semiconductor materials such as tris(8‐hydroxyquinoline)aluminum (Alq₃) and 4,4′‐bis[N‐(1‐naphthyl)‐N‐phenylamino]biphenyl (NPD). Molecular ions produced from Alq₃ and NPD were measured by linear‐type time‐of‐flight (TOF) mass spectrometry under 5.5 keV Ar₇₀₀ ion bombardment. The organic multilayer films were analyzed and etched with large Ar cluster ion beams, and the interfaces between the organic layers were clearly distinguished. The effect of temperature on the diffusion of these materials was also investigated by the depth profiling analysis with Ar cluster ion beams. The thermal diffusion behavior was found to depend on the specific materials, and the diffusion of Alq₃ molecules was observed to start at a lower temperature than that of NPD molecules. These results prove the great potential of large gas cluster ion beams for molecular depth profiling of organic multilayer samples. Copyright © 2009 John Wiley & Sons, Ltd.     

Mass spectral analysis and imaging of tissue by ToF-SIMS—The role of buckminsterfullerene, C60, primary ions

Recent developments in desorption/ionisation mass spectrometry techniques have made their application to biological analysis a realistic and successful proposition. Developments in primary ion source technology, mainly through the advent of polyatomic ion beams, have meant that the technique of secondary ion mass spectrometry (SIMS) can now access the depths of information required to allow biological imaging to be a viable option.Here the role of the primary ion C₆₀⁺ is assessed with regard to molecular imaging of lipids and pharmaceuticals within tissue sections. High secondary ion yields and low surface damage accumulation are demonstrated on both model and real biological samples, indicating the high secondary ion efficiency afforded to the analyst by this primary ion when compared to other cluster ion beams used in imaging. The newly developed 40 keV C₆₀⁺ ion source allows the beam to be focused such that high resolution imaging is demonstrated on a tissue sample, and the greater yields allow the molecular signal from the drug raclopride to be imaged within tissue section following in vivo dosing.The localisation shown for this drug alludes to issues regarding the chemical environment affecting the ionisation probability of the molecule; the importance of this effect is demonstrated with model systems and the possibility of using laser post-ionisation as a method for reducing this consequence of bio-sample complexity is demonstrated and discussed.     

Parallel detection,quantification, and depth profiling of peptides with dynamic-secondary ion mass spectrometry (D-SIMS) ionized by C60–Ar co-sputtering

Time-of-flight secondary ion mass spectrometry (ToF-SIMS) using pulsed C₆₀⁺ primary ions is a promising technique for analyzing biological specimens with high surface sensitivities. With molecular secondary ions of high masses, multiple molecules can be identified simultaneously without prior separation or isotope labeling. Previous reports using the C₆₀⁺ primary ion have been based on static-SIMS, which makes depth profiling complicated. Therefore, a dynamic-SIMS technique is reported here. Mixed peptides in the cryoprotectant trehalose were used as a model for evaluating the parameters that lead to the parallel detection and quantification of biomaterials. Trehalose was mixed separately with different concentrations of peptides. The peptide secondary ion intensities (normalized with respect to those of trehalose) were directly proportional to their concentration in the matrix (0.01–2.5 mol%). Quantification curves for each peptide were generated by plotting the percentage of peptides in trehalose versus the normalized SIMS intensities. Using these curves, the parallel detection, identification, and quantification of multiple peptides was achieved. Low energy Ar⁺ was used to co-sputter and ionize the peptide-doped trehalose sample to suppress the carbon deposition associated with C₆₀⁺ bombardment, which suppressed the ion intensities during the depth profiling. This co-sputtering technique yielded steadier molecular ion intensities than when using a single C₆₀⁺ beam. In other words, co-sputtering is suitable for the depth profiling of thick specimens. In addition, the smoother surface generated by co-sputtering yielded greater depth resolution than C₆₀⁺ sputtering. Furthermore, because C₆₀⁺ is responsible for generating the molecular ions, the dosage of the auxiliary Ar⁺ does not significantly affect the quantification curves.     

Molecular sputter depth profiling using carbon cluster beams

Sputter depth profiling of organic films while maintaining the molecular integrity of the sample has long been deemed impossible because of the accumulation of ion bombardment-induced chemical damage. Only recently, it was found that this problem can be greatly reduced if cluster ion beams are used for sputter erosion. For organic samples, carbon cluster ions appear to be particularly well suited for such a task. Analysis of available data reveals that a projectile appears to be more effective as the number of carbon atoms in the cluster is increased, leaving fullerene ions as the most promising candidates to date. Using a commercially available, highly focused C₆₀^q+ cluster ion beam, we demonstrate the versatility of the technique for depth profiling various organic films deposited on a silicon substrate and elucidate the dependence of the results on properties such as projectile ion impact energy and angle, and sample temperature. Moreover, examples are shown where the technique is applied to organic multilayer structures in order to investigate the depth resolution across film-film interfaces. These model experiments allow collection of valuable information on how cluster impact molecular depth profiling works and how to understand and optimize the depth resolution achieved using this technique.     

An effect of measurement conditions on the depth resolution for low‐energy dual‐beam depth profiling using TOF‐SIMS

An effect of measurement conditions on the depth resolution was investigated for dual‐beam time of flight‐secondary ion mass spectrometry depth profiling of delta‐doped‐boron multi‐layers in silicon with a low‐energy sputter ion (200 eV – 2 keV O₂⁺) and with a high‐energy primary ion (30 keV Bi⁺). The depth resolution was evaluated by the intensity ratio of the first peak and the subsequent valley in B⁺ depth profile for each measurement condition. In the case of sputtering with the low energy of 250 eV, the depth resolution was found to be affected by the damage with the high‐energy primary ion (Bi⁺) and was found to be correlated to the ratio of current density of sputter ion to primary ion. From the depth profiles of implanted Bi⁺ primary ion remaining at the analysis area, it was proposed that the influence of high‐energy primary ion to the depth resolution can be explained with a damage accumulation model. Copyright © 2013 John Wiley & Sons, Ltd.     

Depth profiling of Irganox‐3114 nanoscale delta layers in a matrix of Irganox‐1010 using conventional Cs+ and O2+ ion beams

Depth profiling of an organic reference sample consisting of Irganox 3114 layers of 3 nm thickness at depths of 51.5, 104.5, 207.6 and 310.7 nm inside a 412 nm thick Irganox 1010 matrix evaporated on a Si substrate has been studied using the conventional Cs⁺ and O₂⁺ as sputter ion beams and Bi⁺ as the primary ion for analysis in a dual beam time‐of‐flight secondary ion mass spectrometer. The work is an extension of the Versailles Project on Advanced Materials and Standards project on depth profiling of organic multilayer materials. Cs⁺ ions were used at energies of 500 eV, 1.0 keV and 2.0 keV and the O₂⁺ ions were used at energies of 500 eV and 1.0 keV. All four Irganox 3114 layers were identified clearly in the depth profile using low mass secondary ions. The depth profile data were fitted to the empirical expression of Dowsett function and these fits are reported along with the full width at half maxima to represent the useful resolution for all the four delta layers detected. The data show that, of the conditions used in these experiments, an energy of 500 eV for both Cs⁺ beam and O₂⁺ beam provides the most useful depth profiles. The sputter yield volume per ion calculated from the slope of depth versus ion dose matches well with earlier reported data. Copyright © 2013 John Wiley & Sons, Ltd.     

Are cluster ion analysis beams good choices for hydrogen depth profiling using time‐of‐flight secondary ion mass spectrometry?

For more than three decades, time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) has been used for elemental depth profiling. In recent years, cluster primary ion sources (principally, C₆₀⁺, Bi_n⁺, and Au_n⁺) have become widely available, and they can greatly enhance the signal intensity of molecular ions (10–1000 times). Understanding the performance of cluster ion analysis beams used in elemental depth profiling can greatly assist normal ToF‐SIMS users in choosing the optimal analysis beam for depth profiling work. Presently, however, the experimental data are lacking, and such choices are difficult to make. In this paper, hydrogen and deuterium depth profiling were studied using six different analysis beams—25 keV Bi⁺, Bi₃⁺, Bi₅⁺, 50 keV Bi₃²⁺, 10 keV C₆₀⁺, and 20 keV C₆₀²⁺. The effort shows that cluster primary ions do enhance H^? and D^? yields, but the enhancement is only about 1.5–4.0 times when compared to atomic Bi⁺ ions. Because the currents of atomic ion analysis beams are much stronger than the currents of cluster ion analysis beams for most commercial ToF‐SIMS instruments, the atomic ion analysis beams can provide the strongest H^? and D^? signal intensities, and may be the best choices for hydrogen and deuterium depth profiling. In addition, two representative nuclides, ³⁰Si and ¹⁸O, were also studied and yielded results similar to those of H^? and D^?. Copyright © 2011 John Wiley & Sons, Ltd.     

Characteristic Fragmentation of Polysiloxane Monolayer Films by Bombardment with Monatomic and Polyatomic Primary Ions in TOF-SIMS

This study reports the characteristic fragmentation patterns from two polysiloxane polymers that form ordered overlayer on silver substrates. Results are compared for the bombardment of various monatomic and polyatomic projectiles of Cs⁺, C₆₀⁺ (10 keV), Bi₁⁺, and Bi₃⁺ (25 keV) in the high mass range time-of-flight secondary ion mass spectrometry (TOF-SIMS) spectra. Results are reported from sub-monolayer (solution cast) coverages of poly(dimethylsiloxane)s with the number average molecular weights (M_n) of 2200 and 6140 Da, respectively, and Langmuir-Blodgett monolayers of poly(methylphenylsiloxane) with molecular weights (MW) from 600 and 1000 Da. For each film, Bi projectiles resulted in the emission of positive silver cluster ions from the substrate under the polymer overlayer and peaks corresponding to silver cluster ions with larger mass were observed by impact of polyatomic 25 keV Bi₃⁺ projectiles. In addition, depending on the change of energy of Bi₃⁺, a different pattern of fragments was observed. With Cs⁺ and C₆₀⁺ impact, however, the emission of silver cluster ions was not detected. In the case of C₆₀⁺ impact for PDMS-6140, peaks corresponding to silver-cationized intact oligomers were not observed. In this paper, these results are explained by the possible bombardment mechanism for each projectile, based on its mass, energy, and split trajectories of the component atoms under the polyatomic impact.     

A new SIMS paradigm for 2D and 3D molecular imaging of bio-systems

With the implementation of focused primary ion beams, secondary ion mass spectrometry (SIMS) has become a significant technique in the rapidly emerging field of mass spectral imaging in the biological sciences. Liquid metal ion guns (LMIG) offered the prospect of sub-100 nm spatial resolution, however this aspiration has yet to be reached for molecular imaging. This brief review shows that using LMIG the limitations of the static limit and low ionization probability will restrict useful imaging to around 2 μm spatial resolution with high-yield molecules. The only prospect of going beyond this in the absence of factors of 100 increase in ionization probability is to use polyatomic ion beams such as C₆₀⁺, for which bombardment induced damage is low. In these cases sub-micron imaging becomes possible, using voxels together with molecular depth profiling and 3D imaging. The discussion shows that conventional ToF-SIMS instrumentation then becomes a limitation in that the pulsed ion beam has a very low duty cycle which results in inordinately long analysis times, and pulsing the beam means that high-mass resolution and high spatial resolution are mutually incompatible. New instrumental configurations are described that allow the use of a dc ion beam and separate the mass spectrometry for the ion formation process. Early results from these instruments suggest that sub-micron analysis and imaging with high mass resolution and good ion yields are now realizable, although the low ion yield issue still needs to be solved.     

Medium energy,heavy and inert ion irradiation of metallic thin films: studies of surface nano‐structuring and metal burrowing

In context to the ion induced surface nanostructuring of metals and their burrowing in the substrates, we report the influence of Xe and Kr ion‐irradiation on Pt:Si and Ag:Si thin films of ~5‐nm thickness. For the irradiation of thin films, several ion energies (275 and 350 keV of Kr; 450 and 700 keV of Xe) were chosen to maintain a constant ratio of the nuclear energy loss to the electronic energy loss (S_n/S_e) in Pt and Ag films (five in present studies). The ion‐fluence was varied from 1.0 × 10¹⁵ to 1.0 × 10¹⁷ ions/cm². The irradiated films were characterized using Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The AFM and SEM images show ion beam induced systematic surface nano‐structuring of thin films. The surface nano‐structures evolve with the ion fluence. The RBS spectra show fluence dependent burrowing of Pt and Ag in Si upon the irradiation of both ion beams. At highest fluence, the depth of metal burrowing in Si for all irradiation conditions remains almost constant confirming the synergistic effect of energy losses by the ion beams. The RBS analysis also shows quite large sputtering of thin films bombarded with ion beams. The sputtering yield varied from 54% to 62% by irradiating the thin films with Xe and Kr ions of chosen energies at highest ion fluence. In the paper, we present the experimental results and discuss the ion induced surface nano‐structuring of Pt and Ag and their burrowing in Si. Copyright © 2016 John Wiley & Sons, Ltd.     

Secondary‐Ion Mass Spectrometry Images Cardiolipins and Phosphatidylethanolamines at the Subcellular Level

Millions of diverse molecules constituting the lipidome act as important signals within cells. Of these, cardiolipin (CL) and phosphatidylethanolamine (PE) participate in apoptosis and ferroptosis, respectively. Their subcellular distribution is largely unknown. Imaging mass spectrometry is capable of deciphering the spatial distribution of multiple lipids at subcellular levels. Here we report the development of a unique 70 keV gas‐cluster ion beam that consists of (CO₂)_n⁺(n>10 000) projectiles. Coupled with direct current beam buncher‐time‐of‐flight secondary‐ion mass spectrometry, it is optimized for sensitivity towards high‐mass species (up to m/z 3000) at high spatial resolution (1 μm). In combination with immunohistochemistry, phospholipids, including PE and CL, have been assessed in subcellular compartments of mouse hippocampal neuronal cells and rat brain tissue.     

Experimental and theoretical determination of the mixing efficiency at low‐energy Ar+ bombardment: case study of the Cu/Co system

The mixing of a Co/Cu bilayer induced by low‐energy ion bombardment was studied by AES depth profiling and molecular dynamic (MD) simulation. The conditions of the ion bombardment were as follows: Ar⁺ ion, 1 keV energy, 82° angle of incidence (with respect to the surface normal). In AES depth profiling, the in‐depth concentration distribution was estimated from the measured Auger intensities assuming that the in‐depth distribution is an erf function. The variance (σ²) of the erf function gave the broadening of the interface due to ion bombardment, which divided by the fluence (Φ) and deposited energy (F_D given by SRIM) gave the mixing efficiency (σ²/ΦF_D) to be 0.08 ± 0.01 nm⁵/keV. The mixing efficiency calculated by MD, 0.09 nm⁵/keV, agreed well with that estimated from the experimental data, and both have been close to the value assuming ballistic mixing. Copyright © 2007 John Wiley & Sons, Ltd.     

In situ XPS and SIMS analysis of O2+ beam‐induced silicon oxidation

The chemical composition variation of silicon under 4 keV O₂⁺ ion beam bombardment at different incident angles was studied by in situ small‐area XPS. The changes in secondary ion profile (³⁰Si⁺, ⁴⁴SiO⁺, ⁵⁶Si₂⁺, ⁶⁰SiO₂⁺) during oxygen ion beam bombardment also have been monitored. We present a direct correlation of the changes in secondary ion depth profile with surface composition during sputtering. Evolution of the secondary ion profile obtained from SIMS shows similar trends with variation of oxygen concentration in the crater surface measured by XPS. It is shown that when the oxygen ion beam incidence angle is < 40° silicon dioxide is the dominant species on the crater surface and the matrix ion species ratio (MISR) value for ⁴⁴SiO⁺/⁵⁶Si₂⁺ is higher than for ³⁰Si⁺/⁵⁶Si₂⁺. For incidence angles of >40°, the formation of sub‐oxide is favoured and thus the MISR value for ⁴⁴SiO⁺/⁵⁶Si₂⁺ is lower than for ³⁰Si⁺/⁵⁶Si₂. At 40° bombardment there are similar amounts of SiO₂ and sub‐oxides present on the crater surface and the MISR values for ⁴⁴SiO⁺/⁵⁶Si₂⁺ and ³⁰Si⁺/⁵⁶Si₂⁺ are also similar. Copyright © 2004 John Wiley & Sons, Ltd.     

Development toward a double focusing isotopic separator for noble gas isotope enrichment

A double focusing sector field mass filter used in Nier–Johnson geometry has been built in order to perform Kr isotope enrichment for ⁸¹Kr and ⁸⁵Kr isotopes. The principle consists in implanting Kr⁺ ions accelerated at 7 keV in Al foils after separation using the magnetic sector. A specific ion source has been designed capable of generating high Kr⁺ ion beams (>0.5 μA) to transfer into the collecting Al foils in 3 to 5 h significant fractions of large Kr samples (10¹⁵ to 10¹⁶ atoms) initially introduced in the instrument. Implanted Kr isotopes can be further selectively released from the Al foil by surface ablation using an infrared laser beam. Implantation yields and enrichment factors are measured using a conventional mass spectrometer. Copyright © 2016 John Wiley & Sons, Ltd.     

Optimization of the depth resolution for profiling SiO2/SiC interfaces by dual-beam TOF-SIMS combined with etching

To examine precise depth profiles at the interface of SiO₂/SiC, a high resolution that can detect slight discrepancies in the distribution is needed. In this study, an experimental method to achieve a high resolution of less than 1 nm was developed by using dual-beam time-of-flight secondary ion mass spectrometry (TOF-SIMS). The analysis was preceded by the following three steps: (1) determination of the optimal analytical conditions of the analysis beam (Bi⁺) and sputtering beam (Cs⁺), (2) verification of the etching methods to thin the SiO₂ layer, and (3) confirmation of the benefits of the low-energy sputtering beam directed toward SiO₂/SiC samples. By using the secondary ion intensity peak-to-valley ratio of BN⁻ and BO⁻ of a sample with delta-doped boron multilayers, the appropriate Bi⁺/Cs⁺ condition for a high depth resolution was determined for each energy level of the sputtering beam. Upon verification of the etching methods to thin the SiO₂ layer, slight discrepancies were found between samples that were obtained with different etching methods. The difference in the roughness values of the etched surfaces was proactively utilized for the performance confirmation of the low-energy sputtering beam by means of precise observation of the profiles at the SiO₂/SiC interface. The use of a Cs beam with a low energy between 0.25 and 0.5 keV enabled the detection of slight discrepancies in the roughness of less than 1 nm between samples. The aforementioned method has the potential to accurately detect discrepancies in the intrinsic distribution at the SiO₂/SiC interface among samples.     

Ion‐beam‐induced morphology on the surface of thin polymer films at low current density and high ion fluence

The effect of Xe⁺ bombardment on the surface morphology of four different polymers, polystyrene (PS), poly(phenylene oxide), polyisobutylene, and polydimethylsiloxane, was investigated in ion energy and fluence ranges of interest for secondary ion mass spectrometry depth‐profiling analysis. Atomic force microscopy (AFM) was applied to analyze the surface topography of pristine and irradiated polymers. AFM analyses of nonirradiated polymer films showed a feature‐free surface with different smoothness. We studied the influence of different Xe⁺ beam parameters, including the incidence angle, ion energy (660–4000 eV), current density (0.5 × 10² to 8.7 × 10² nA/cm²), and ion fluence (4 × 10¹⁴ to 2 × 10¹⁷ ion/cm²). Xe⁺ bombardment of PS with 3–4 keV at a high current density did not induce any change in the surface morphology. Similarly, for ion irradiation with lower energy, no surface morphology change was found with a current density higher than 2.6 × 10² nA/cm² and an ion fluence up to 4 × 10¹⁶ ion/cm². However, Xe⁺ irradiation with a lower current density and a higher ion fluence led to topography development for all of the polymers. The roughness of the polymer surface increased, and well‐defined patterns appeared. The surface roughness increased with ion irradiation fluence and with the decrease of the current density. A pattern orientation along the beam direction was visible for inclined incidence between 15° and 45° with respect to the surface normal. Orientation was not seen at normal incidence. The surface topography development could be explained on the basis of the balance between surface damage and sputtering induced by the primary ion beam and redeposition–adsorption from the gas phase. Time‐of‐flight secondary ion mass spectrometry analyses of irradiated PS showed strong surface modifications of the molecular structure and the presence of new material. © 2000 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 39: 314–325, 2001     

Ultra-low-angle microtomy and static secondary ion mass spectrometry for molecular depth profiling of UV-curable acrylate multilayers at the nanoscale

Development of sustainable materials requires methods capable of probing the molecular composition of samples not only at the surface but also in depth. Static secondary ion mass spectrometry (S-SIMS) characterises the distribution of organic and inorganic compounds at the surface. Ultra-low-angle microtomy (ULAM) has been studied as an alternative or complementing method to the molecular depth profiling with, e.g. C₆₀⁺ projectiles. Acrylate-based multilayers relevant to industrial inkjet printing have been sectioned at a cutting angle below 1°. In this way, analysis of the section over a distance of 1 μm allows a depth range in the order of a few nm in the original sample to be achieved. Adequate procedures to optimise the ULAM step and minimise or control the cutting artefacts have been developed. The combination of ULAM with S-SIMS has allowed a depth resolution of 10 nm to be obtained for components at a distance of 35 μm from the surface.     

Imaging mass spectrometry of gold nanoparticles in a tissue section as an immunohistochemical staining mass probe

For analysis of low abundance peptides in a tissue section, immunohistochemical staining through antibody‐antigen interaction is a usual technique. The antibody is conjugated with a probe moiety that aids in highly sensitive detection. Gold nanoparticles, which show excellent chemical stability and variation of surface modifications, are expected to act as a sensitive mass probe to desorb gold ions (Au⁺, Au₂⁺, Au₃⁺) that are distinguishable from fragment ions from organic molecules. Here, green fluorescent proteins (GFP) in a tissue section of a transgenic zebrafish were detected by the gold mass probe conjugated with antibodies. Due to the efficient ionization and desorption of gold ions, imaging mass spectrometry of Au₂⁺ ions indicated the distribution of gold nanoparticles stained in a tissue section, and the mass signal distribution was consistent with the area where the GFP‐expressing cells were distributed. Conventional immunofluorescence techniques showed intense autofluorescence that come from intrinsic fluorophores in the tissue section. In contrast, the gold nanoparticles acted as an immunostaining mass probe that displayed significantly lower background signals.