共查询到20条相似文献，搜索用时 46 毫秒
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采用高温垂直Bridgman法,以ZnTe(5N)、Mg(5N)和Te(7N)为初始原料,在高温下成功生长出了尺寸为φ15mm×50 mm的Zn1-xMgxTe晶体.分别采用X射线衍射、紫外可见分光光度计和红外光谱仪研究了晶体的结构及光学性质,通过PL谱和化学腐蚀的方法分析了晶体的结晶质量.结果表明:所生长的晶体具有立方相结构,晶格常数为0.61585 nm,略大于ZnTe晶格常数,晶锭中质量最好部分的晶片红外和紫外透过率接近60;,室温下其禁带宽度约为2.37 eV.77 K温度下,PL谱中存在A和B两个主要的发光带,位错腐蚀坑密度在105 cm-2数量级. 相似文献
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垂直Bridgman法生长Cd1-XMnxTe晶体的缺陷研究 总被引：1，自引：0，他引：1
本文采用垂直布里奇曼(Bridgman)法生长了尺寸为Φ30 mm×130mm的Cd1-xMnxTe晶体,利用Nakagawa腐蚀液显示了晶体的位错、Te夹杂相和孪晶缺陷,并采用傅立叶变换红外光谱仪研究了晶体的红外透过率与晶体缺陷之间的关系.结果表明:生长态Cd1-xMnxTe晶体的位错密度为104～105 cm-2,Te夹杂相密度为103～104cm-2,晶体中的孪晶主要为共格孪晶,孪晶面为[111]面,且平行于晶体生长方向.在入射光波数4000～500 cm-1范围,晶体的红外透过率为36.7;～55.3;,红外透过率越大,表明晶体的位错和Te夹杂相密度越低,晶体对该波长范围的红外光表现为晶格吸收和自由载流子吸收. 相似文献
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采用有限元法,对泡生法生长蓝宝石晶体不同生长阶段固液界面的形状和温度梯度进行模拟计算,探讨分析了生长速率对放肩、等径阶段蓝宝石生长的影响.结果表明:固液界面凸出度在放肩阶段较大,在等径阶段凸出度相对较小,固液界面温度梯度随着晶体生长不断减小.在合理速率范围内,放肩阶段0～2 mm/h,速率对固液界面的影响很小,等径阶段2～5 mm/h,速率对固液界面的影响越来越大,固液界面温度梯度和形变均随速率的增大而减小.利用模拟结果,调节实际晶体生长工艺参数,成功长出80 kg的大尺寸高质量蓝宝石晶体. 相似文献
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In this work the momentum and heat transfer on a Bridgman system for the growth of GaSb has been studied. The main objective was to obtain some information about the role of the different processes like conduction, radiation and convective effects both in the melted material and the surrounding environment. These simulations are based on a 2D axi‐symmetrical model using a finite element method based code. The simulations have been carried out both in steady and transient states. It has been demonstrated that the consideration of a moving environment is important in the distribution of temperatures. The effects of the variations of thermal conductivities and emisivities on the thermal and velocity fields have been investigated. The results show that the key parameters are the thermal conductivities of the different materials present in the system, which produce significant changes in the convective flows inside the melt. 相似文献
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《Crystal Research and Technology》2017,52(9)
High‐quality GaSb and Ga1‐xInxSb (x = 0.14) crystals were grown via the vertical Bridgman (VB) method. The lattice structure, morphology, optical, and transport properties of the GaSb and GaInSb crystals were characterized. The influence of the indium doping on the physical properties of the GaSb crystal was also investigated. The results demonstrate that the indium doping maintains the zinc‐blende lattice structure of the GaSb crystal. The segregation of indium is very low, with the radial and axial concentration variation of 2.32% and 4.84%, respectively. The indium doping significantly reduces the dislocation density down to 1.275 × 103 cm−2. The band gap of the indium‐doped GaSb is reduced to 0.549 eV, consistent with the decreased infrared transmission measured by FTIR. Surprisingly, the indium doping changes the majority carrier type of the crystal, from p‐type in the pristine GaSb crystal to n‐type in the GaInSb crystal. Compared to the GaSb crystal, the GaInSb crystal shows enhanced transport properties, with carrier mobility increased to 2.512 × 103 cm2/(V•s) and resistivity reduced to 0.521 × 10−3 ohm•cm. 相似文献
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《Crystal Research and Technology》2018,53(7)
A solution growth process combined of vertical Bridgman and vertical gradient freeze in a metal free Si‐C melt at growth temperatures of 2300 °C is developed. The influence of the growth parameters for different growth steps and of the surface polarity of the seed is investigated. The layers are evaluated by Raman spectroscopy, scanning electron microscopy and optical profilometry. The growth of high quality SiC layers with a diameter of 30 mm and a layer thickness up to 200 µm is achieved. 相似文献
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Ⅲ-Ⅶ族InSe晶体是一种非常重要的化合物半导体材料,在高性能纳米电子器件、红外光探测、光电器件及柔性电子等领域有广泛应用。本文简要介绍了In-Se相图的发展历程,InSe具有非一致熔融特性,可通过包晶反应从准化学计量比或非化学计量比溶液中析晶获得,其中In/Se摩尔比对InSe转化率有重要影响。迄今,垂直布里奇曼法、提拉法、水平梯度凝固法、低温液相法及气相输运法等多种技术被成功用于制备InSe晶体。为全面了解InSe晶体生长的历史和现状,本文从工艺原理、技术要点、晶体生长结果等方面将国内外相关工作进行了梳理,并对各种方法的优缺点进行了比较。研究分析表明垂直布里奇曼法因对设备要求简单,操作简易,现已成为制备高质量大尺寸InSe晶体的主流技术;水平梯度凝固法则在ε型InSe晶体生长方面颇具特色,未来可在新材料性能研究与应用探索上与垂直布里奇曼法形成一定补充。 相似文献
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Y. Zhang Y. Liu W. Jiang X. H. Pan W. Q. Jin F. Ai H. C. Wang 《Crystal Research and Technology》2009,44(3):248-252
Bi12SiO20 single crystals have been grown successfully by vertical Bridgman technique. During the crystal growth process, different axial vibration amplitudes of 50 μm, 70 μm and 100 μm were applied with the same vibration frequency of 50 Hz. The effect of different axial vibration amplitudes on quality of the as‐grown Bi12SiO20 single crystals was discussed. The crystals have been characterized by X‐ray rocking curve optical and absorption spectrum. The experimental results reveal that the axial vibration amplitude has a pronounced effect on quality of the as‐grown Bi12SiO20 single crystals. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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高质量大尺寸氟化钙晶体是深紫外光刻、空天相机等高端应用不可或缺的光学材料,同时制备高质量大尺寸晶体也是晶体生长领域的难题。本文以数值手段分别模拟了3、7和20英寸(1英寸=2.54 cm)氟化钙晶体在不同生长阶段的传热、流动及相变过程。结果表明,晶体尺寸增加大幅加强熔体流动强度,而且造成坩埚外壁散热部分的面积急剧增加,由此引发固液界面局部凹陷、径向温差增大、晶体边缘-中心温差翻转、生长界面附近的轴向温梯大幅衰减等问题。此外,本文还就大尺寸氟化钙晶体生长中的坩埚下降速率和发热体功率的优化控制策略进行了探讨。 相似文献
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Liu Juncheng Song Dejie Zhang Hongying Zhai Shenqiu 《Crystal Research and Technology》2007,42(8):741-750
The temperature gradient within a furnace chamber and the crucible pull rate are the key control parameters for cadmium zinc telluride Bridgman single crystal growth. Their effects on the heat and mass transfer in front of the solid‐liquid interface and the solute segregation in the grown crystal were investigated with numerical modeling. With an increase of the temperature gradient, the convection intensity in the melt in front of the solid‐liquid interface increases almost proportionally to the temperature gradient. The interface concavity decreases rapidly at faster crucible pull rates, while it increases at slow pull rates. Moreover, the solute concentration gradient in the melt in front of the solid‐liquid interface decreases significantly, as does the radial solute segregation in the grown crystal. In general, a decrease of the pull rate leads to a strong decrease of the concavity of the solid‐liquid interface and of the radial solute segregation in the grown crystal, while the axial solute segregation in the grown crystal increases slightly. A combination of a low crucible pull rate with a medium temperature gradient within the furnace chamber will make the radial solute segregation of the grown crystal vanish. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献