Magneto-oscillations in a trapezoidal two-dimensional electron gas grown over GaAs wires

In this work we investigate a nonplanar two-dimensional electron gas (2DEG) that allows study of the electronic behaviour in random and sign-alternating magnetic fields. Shubnikov–de Haas oscillations were studied by measuring the magnetoresistance at different angles φ between the field and the substrate. We find that at low magnetic field the position of the oscillation peaks followsB_p ∼ Bsin (φ − θ), where θ is the angle between the field and the facets that effectively contribute to magnetoresistance. This is due to the fact that electrons follow different paths depending on the realization of a specific magnetic field.     

Magnetic moment of a two-dimensional degenerate electron gas in mesoscopic samples

The orbital magnetism of two-dimensional electrons in mesoscopic samples is studied in models where the interaction between electrons is neglected. Various geometries are considered as there are disc, plaquette, bracelet with hard wall confinement and also a confinement with a parabolic potential. We calculate the average magnetic moment which means an average with respect to size fluctuations and de Haas-van Alphen oscillations which arise in the case of a sharp Fermi cutoff. We see three distinct ranges in the magnetic field: (i) small field region where perturbation theory applies; (ii) moderate fields where edge currents play a prominent role; and (iii) the high field range with a Landau type susceptibility. In a quasiclassical picture, the electronic orbits are not qualitatively changed by a magnetic field in (i); skipping orbits are important in (ii); and in (iii), the cyclotron radius is smaller than the sample size. As a rule, we find an enhancement of the magnetic response which increases with k_FL, that is, with sample size divided by the Fermi wave length. Also, we have found out that the quasiclassical approximation fails in the calculation of the magnetic properties; on the other hand, we have seen no essential differences between the canonical ensemble (fixed particle number) and the grand canonical ensemble (chemical potential given). In the case of plaquettes, in particular for samples in the form of squares, we have found agreement with experimental results by Lévy, Reich, Pfeiffer and West.     

Low-field magnetoresistance of strongly modulated two-dimensional electron gas

The typical form of the low-field magnetoresistance anomaly induced by a strong one-dimensional periodic modulation of the background potential is described. It is shown that the magnetoresistance peak due to the magnetic breakdown is always followed by a resistance increase at higher magnetic fields, for which οcτ > 1.     

Quantum spin-glass transition in the two-dimensional electron gas

We discuss the possibility of spin-glass order in the vicinity of the unexpected metallic state of the two-dimensional electron gas in zero applied magnetic field. An average ferromagnetic moment may also be present, and the spin-glass order then resides in the plane orthogonal to the ferromagnetic moment. We argue that a quantum transition involving the destruction of the spinglass order in an applied in-plane magnetic field offers a natural explanation of some features of recent magnetoconductance measurements. We present a quantum field theory for such a transition and compute its mean field properties.     

Magneto-oscillations due to electron-electron interactions in the ac conductivity of a two-dimensional electron gas

Electron-electron interactions give rise to the correction, deltasigma(int)(omega), to the ac magnetoconductivity, sigma(omega), of a clean 2D electron gas that is periodic in omega_(c)(-1), where omega_(c) is the cyclotron frequency. Unlike conventional harmonics of the cyclotron resonance, which are periodic with omega, this correction is periodic with omega(3/2). Oscillations in deltasigma(int)(omega) develop at low magnetic fields, omega_(c)相似文献   

HgMnTe磁性二维电子气自旋-轨道和交换相互作用研究

通过分析不同温度下HgMnTe磁性二维电子气Shubnikov-de Hass（SdH）振荡的拍频现象，研究了量子阱中电子自旋 轨道相互作用和spd交换相互作用.结果表明：（1）在零磁场下，电子的自旋 轨道相互作用导致电子发生零场自旋分裂；（2）在弱磁场下，电子的自旋-轨道相互作用占主导地位，并受Landau分裂和Zeeman分裂的影响，电子的自旋分裂随磁场增加而减小；（3）在高磁场下，电子的spd交换相互作用达到饱和，电子的自旋分裂主要表现为Zeeman分裂.实验证明了当电子的Zeeman分裂能量与零场 关键词： 磁性二维电子气 Zeeman分裂 Rashba自旋分裂     

二维电子气等离激元太赫兹波器件

固态等离激元太赫兹波器件正成为微波毫米波电子器件技术和半导体激光器技术向太赫兹波段发展和融合的重要方向之一。本综述介绍AlGaN/GaN异质结高浓度和高迁移率二维电子气中的等离激元调控、激发及其在太赫兹波探测器、调制器和光源中应用的近期研究进展。通过光栅和太赫兹天线实现自由空间太赫兹波与二维电子气等离激元的耦合,通过太赫兹法布里-珀罗谐振腔进一步调制太赫兹波模式,增强太赫兹波与等离激元的耦合强度。在光栅-谐振腔耦合的二维电子气中验证了场效应栅控的等离激元色散关系,实现了等离激元模式与太赫兹波腔模强耦合产生的等离极化激元模式,演示了太赫兹波的调制和发射。在太赫兹天线耦合二维电子气中实现了等离激元共振与非共振的太赫兹波探测,建立了太赫兹场效应混频探测的物理模型,指导了室温高灵敏度自混频探测器的设计与优化。研究表明,基于非共振等离激元激发可发展形成室温高速高灵敏度的太赫兹探测器及其焦平面阵列技术。然而,固态等离激元的高损耗特性仍是制约基于等离激元共振的高效太赫兹光源和调制器的主要瓶颈。未来的研究重点将围绕高品质因子等离激元谐振腔的构筑,包括固态等离激元物理、等离激元谐振腔边界的调控、新型室温高迁移率二维电子材料的运用和高品质太赫兹谐振腔与等离激元器件的集成等。     

Dephasing in the presence of a two-dimensional electron gas at high magnetic fields

By means of degenerate four-wave mixing (FWM), we investigate the quantum coherence of electron–hole pairs in the presence of a two-dimensional electron gas in modulation-doped GaAs–AlGaAs quantum wells in the regime of the integer quantum-Hall effect. We observe large jumps in the decay time of the FWM signal at even Landau level filling factors. The main features of the experimental observations can be qualitatively reproduced by a model which takes into account the number of unoccupied states within the highest partially occupied Landau level. Furthermore, we observe quantum beats between up to three different Landau level transitions.     

Sensing domain wall pinning in the longitudinal magnetoresistance of a two-dimensional electron gas

We investigate the sensing of domain wall pinning in thin Co wires positioned on top of a two-dimensional electron gas (2DEG) heterostructure by measuring the longitudinal resistance of the 2DEG as the magnetic field is swept, in an analogy to the Barkhausen effect. For comparison, we also measure the magnetoresistance of the ferromagnetic film in the same device in a subsequent sweep. Compared to the Hall measurements, the longitudinal measurement has the advantage of sensing magnetic activity over longer lengths, while compared to the measurement of the magnetoresistance in the ferromagnetic wire, it offers complementary information related to the pinning and unpinning of the domain wall, due to its sensitivity only to the out-of-plane magnetic field component.     

Al0.22Ga0.78N/GaN二维电子气中的弱局域和反弱局域效应

通过磁输运测量研究了Al_0.22Ga_0.78N/GaN二维电子气的电子相干散射中的弱局域和反弱局域化现象.在外加弱磁场的情况下，该系统表现出正-负磁阻的变化，说明在Al_0.22Ga_0.78N/GaN异质结中存在晶体场引起的电子自旋-轨道散射.同时讨论了二维电子气中不同的散射时间对温度的依赖关系，实验得到的非弹性散射时间与温度成反比，表明非弹性散射机理主要来源于小能量转移的电子-电子散射. 关键词： 二维电子气 弱局域 磁阻     

Gauge theory approach for diffusive and precessional spin dynamics in a two-dimensional electron gas

We develop a gauge theory for diffusive and precessional spin dynamics in a two-dimensional electron gas. Our approach reveals a direct connection between the absence of the equilibrium spin current and a strong anisotropy in the spin relaxation: both effects arise if spin-orbit coupling is reduced to a pure gauge SU(2) field. In this case, the spin-orbit coupling can be removed by a gauge transformation in the form of a local SU(2) spin rotation. The resulting spin dynamics is exactly described in terms of two kinetic coefficients: the spin diffusion and electron mobility. After the inverse transformation, full diffusive and precessional spin density dynamics, including the anisotropic spin relaxation, formation of stable spin structures, and spin precession induced by a macroscopic current are restored. Explicit solutions of the spin evolution equations are found for the initially uniform spin density and for stable, nonuniform structures. Our analysis demonstrates a universal relation between the spin relaxation rate and spin-diffusion coefficient.     

Influence of a two-dimensional electron gas on current—voltage characteristics of Al0.3{Ga}0.7 N/GaN high electron mobility transistors

The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors（HEMTs） are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional electron gas（2DEG） in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 10^13 A/m^2 within a very narrow region（about 5 nm）.For a current density of 7 × 10^13 A/m62 passing through the 2DEG channel with a 2DEG density of above 1.2 × 10^17 m^-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.     

GaN／A1xGal-xN异质结二维电子气的磁电阻研究

通过对GaN／A1xGa1-xN异质结中二维电子气磁输运结果的分析,研究了磁电阻的起因．结果表明,整个磁场范围的负磁电阻是由电子一电子相互作用引起的,而高场下的正磁电阻来源于平行电导的进一步修正．用拟合的方法得到了电子一电子相互作用项以及平行电导层的载流子浓度和迁移率,并用不同的计算方法对拟合结果进行了验证．     

Enhanced tunability of two-dimensional electron gas on SrTiO3 through heterostructuring

Two-dimensional electron gases (2DEGs) on the SrTiO₃ (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. We report that the tunability of the 2DEG-carrier density is significantly enhanced by adding a monolayer LaTiO₃ (LTO) onto the STO. Ultraviolet (UV) irradiation induced maximum carrier density of the 2DEG in LTO/STO is increased by a factor of ~4 times, compared to that of the bare STO. By oxygen gas exposure, it becomes 10 times smaller than that of the bare STO. This enhanced tunability is attributed to the drastic surface property change of a polar LTO layer by UV irradiation and O₂ exposure. This indicates that the 2DEG controllability in LTO/STO is more reliable than that on the bare STO driven by defects, such an oxygen vacancy.     

Magnetoelectronic transport of the two-dimensional electron gas in CdSe single quantum wells

Hall mobility and magnetoresistance coefficient for the two-dimensional (2D) electron transport parallel to the heterojunction interfaces in a single quantum well of CdSe are calculated with a numerical iterative technique in the framework of Fermi-Dirac statistics. Lattice scatterings due to polar-mode longitudinal optic (LO) phonons, and acoustic phonons via deformation potential and piezoelectric couplings, are considered together with background and remote ionized impurity interactions. The parallel mode of piezoelectric scattering is found to contribute more than the perpendicular mode. We observe that the Hall mobility decreases with increasing temperature but increases with increasing channel width. The magnetoresistance coefficient is found to decrease with increasing temperature and increase with increasing magnetic field in the classical region.      

N极性GaN/AlGaN异质结二维电子气模拟

通过自洽求解薛定谔方程和泊松方程,较系统地研究了GaN沟道层、AlGaN背势垒层、Si掺杂和AlN插入层对N极性GaN/AlGaN异质结中二维电子气(2DEG)的影响,分析表明,GaN沟道层厚度、AlGaN背势垒层厚度及Al组分变大都能一定程度上提高二维电子气面密度,AlGaN背势垒层的厚度和Al组分变大也可提高二维电子气限阈性,且不同的Si掺杂形式对二维电子气的影响也有差异,而AlN插入层在提高器件二维电子气面密度、限阈性等方面表现都较为突出,在模拟中GaN沟道层厚度小于5nm时无法形成二维电子气,超过20nm后二维电子气面密度趋于饱和,而AlGaN背势垒厚度超过40nm后二维电子气也有饱和趋势,对均匀掺杂和delta掺杂而言AlGaN背势垒层Si掺杂浓度超过5×10~(19)cm~(-3)后2DEG面密度开始饱和,而厚度为2nmAlN插入层的引入会使2DEG面密度从无AlN插入层时的0.93×10~(13)cm~(-2)提高到1.17×10~(13)cm~(-2)。     

The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures

To reveal the internal physics of the low-temperature mobility of two-dimensional electron gas （2DEG） in Al- GaN/GaN heterostructures, we present a theoretical study of the strong dependence of 2DEG mobility on Al content and thickness of AlGaN barrier layer. The theoretical results are compared with one of the highest measured of 2DEG mobility reported for AlGaN/GaN heterostructures. The 2DEG mobility is modelled as a combined effect of the scat- tering mechanisms including acoustic deformation-potential, piezoelectric, ionized background donor, surface donor, dislocation, alloy disorder and interface roughness scattering. The analyses of the individual scattering processes show that the dominant scattering mechanisms are the alloy disorder scattering and the interface roughness scattering at low temperatures. The variation of 2DEG mobility with the barrier layer parameters results mainly from the change of 2DEG density and distribution. It is suggested that in AlGaN/GaN samples with a high Al content or a thick AlGaN layer, the interface roughness scattering may restrict the 2DEG mobility significantly, for the AlGaN/GaN interface roughness increases due to the stress accumulation in AlGaN layer.     

Oscillations of the magnetoresistance of a two-dimensional electron gas under microwave irradiation: Influence of the irradiation frequency

We present measurements of the magnetoresistance of a two-dimensional electron gas (2DEG) under continuous microwave as a function of the irradiation frequency. In a previous work by Simovič et al. [Phys. Rev. B 71 (2005) 233303], the magnetoresistance under microwave was shown to be modulated by oscillations of large amplitude that are periodic with magnetic field, their period and phase depending strongly on the electron density. Here we show that the phase and the amplitude of the microwave-induced oscillations also depend on the frequency of irradiation and the sign of the magnetic field.     

In-plane anisotropy in two-dimensional electron gas at LaAlO_3/SrTiO_3(110) interface

A systematic study of the two-dimensional electron gas at La AlO_3/SrTiO_3(110) interface reveals an anisotropy along two specific directions, [001] and 1ī0. The anisotropy becomes distinct for the interface prepared under high oxygen pressure with low carrier density. Angular dependence of magnetoresistance shows that the electron confinement is stronger along the 1ī0 direction. Gate-tunable magnetoresistance reveals a clear in-plane anisotropy of the spin–orbit coupling,and the spin relaxation mechanism along both directions belongs to D'yakonov–Perel'(DP) scenario. Moreover, in-plane anisotropic superconductivity is observed for the sample with high carrier density, the superconducting transition temperature is lower but the upper critical field is higher along the 1ī0 direction. This in-plane anisotropy could be ascribed to the anisotropic band structure along the two crystallographic directions.