Controlling the energy transfer between near-field optically coupled ZnO quantum dots

We performed time-resolved spectroscopy of ZnO quantum dots (QD), and observed exciton energy transfer and dissipation between QD via an optical near-field interaction. Two different sizes of ZnO QD with resonant energy levels were mixed to test the energy transfer and dissipation using time-resolved photoluminescence spectroscopy. The estimated energy transfer time was 144 ps. Furthermore, we demonstrated that the ratio of energy transfer between the resonant energy states could be controlled.     

Two-dimensional array of room-temperature nanophotonic logic gates using InAs quantum dots in mesa structures

We present a detailed study of the dynamics of light in passive nonlinear resonators with shallow and deep intracavity periodic modulation of the refractive index in both longitudinal and transverse directions of the resonator. We investigate solutions localized in the transverse direction (so-called Bloch cavity solitons) by means of envelope equations for underlying linear Bloch modes and solving Maxwell’s equations directly. Using a round-trip model for forward and backward propagating waves we review different types of Bloch cavity solitons supported by both focusing (at normal diffraction) and defocussing (at anomalous diffraction) nonlinearities in a cavity with a weak-contrast modulation of the refractive index. Moreover, we identify Bloch cavity solitons in a Kerr-nonlinear all-photonic crystal resonator solving Maxwell’s equations directly. In order to analyze the properties of Bloch cavity solitons and to obtain analytical access we develop a modified mean-field model and prove its validity. In particular, we demonstrate a substantial narrowing of Bloch cavity solitons near the zero-diffraction regime. Adjusting the quality factor and resonance frequencies of the resonator optimal Bloch cavity solitons in terms of width and pump energy are identified.     

Excitons in coupled quantum dots

Properties of excitons in vertically coupled GaAs/AlGaAs quantum dots were investigated using the variational method within the envelope function and effective mass approximations. It was found that when the thickness of the spacer layer becomes less than about one exciton Bohr radius, both the exciton binding energy and the fundamental optical transition energy are reduced compared to those in isolated quantum dots. This is a result of increased space extension of exciton due to the penetration of carrier wave functions into the spacer layer and corresponding reduction in confinement energy which dominates over the Coulomb interaction between the electron and the hole.     

Photoluminescence dynamics of coupled quantum dots

We have investigated effects of the strain-compensating spacer layer on photoluminescence (PL) properties of excitons in the multilayered self-assembled quantum dots (SAQDs). The PL decay time of excitons in the sample with a thin spacer layer is longer than that with a thick spacer layer. This is attributed to the lowering of the oscillator strengths owing to reduction of the overlap integral between the electrons and holes envelope functions because of spatially extended electron envelope functions in the growth direction. In addition, the PL intensity of the transverse-magnetic mode in the sample with the thinner spacer layer has been found to be enhanced in the polarized PL measurement from the cleaved edge surface of the samples. These results indicate the possibility of QDs connecting along the growth direction via penetration of the electron envelope function.     

Photon statistics from coupled quantum dots

We present an optical study of two closely stacked self-assembled InAs/GaAs quantum dots. The energy spectrum and correlations between photons subsequently emitted from a single pair provide not only clear evidence of coupling between the quantum dots but also insight into the coupling mechanism. Our results are in agreement with recent theories predicting that tunneling is largely suppressed between nonidentical quantum dots and that the interaction is instead dominated by dipole-dipole coupling and phonon-assisted energy transfer processes.     

Magnetic interaction between coupled quantum dots

We study the magnetic coupling in artificial molecules composed of two and four laterally coupled quantum dots. The electronic ground-state configurations of such systems are determined by applying current spin density functional theory which allows to include effects of magnetic fields. While the ground-state of a two-dot molecule with strong enough inter-dot coupling tends to be antiferromagnetic with respect to the spins of the single dot components, we find that a square lattice of four dots has a ferromagnetic ground state. Received 17 February 1999 and Received in final form 1 June 1999     

Disappearance of quantum chaos in coupled chaotic quantum dots

Statistical properties of the single electron levels confined in the semiconductor (InAs/GaAs, Si/SiO₂) double quantum dots (DQDs) are considered. We demonstrate that in the electronically coupled chaotic quantum dots the chaos with its level repulsion disappears and the nearest neighbor level statistics becomes Poissonian. This result is discussed in the light of the recently predicted “huge conductance peak” by R.S. Whitney et al. [Phys. Rev. Lett. 102 (2009) 186802] in the mirror symmetric DQDs.     

New scheme on how to realize quantum NOT gate

Recently, some schemes on how to realize quantum NOT gate have been reported. In this paper, we theoretically propose a new scheme by means of quantum theory. Here we use a quantum coin as a quantum NOT gate and its logic function is realized by the quantum game theory. In our schemes, classical noise does not disturb the realization of quantum NOT gate.     

Carrier tunneling in asymmetric coupled quantum dots

Exciton spin relaxation at low temperatures in InAlAs–InGaAs asymmetric double quantum dots embedded in AlGaAs layers has been investigated as a function of the barrier thickness by the time-resolved photoluminescence measurements. With decreasing the thickness of the AlGaAs layer between the dots, the spin relaxation time change from 3 ns to less than 500 ps. The reduction in the spin relaxation time was considered to originate from the spin-flip tunneling between the ground state in InAlAs dot and the excited states in InGaAs dot, and the resultant tunneling leads to the spin depolarization of the ground state in InGaAs dot.     

Four-wave mixing in coupled semiconductor quantum dots

We present a theoretical analysis of four-wave mixing in coupled quantum dots subject to inhomogeneous broadening. For the biexciton transitions, a clear signature of interdot-coupling appears in the spectra. The possibility of experimental observation is discussed.     

Optimal control strategies for coupled quantum dots

Semiconductor quantum dots are ideal candidates for quantum information applications in solid-state technology. However, advanced theoretical and experimental tools are required to coherently control, for example, the electronic charge in these systems. Here we demonstrate how quantum optimal control theory provides a powerful way to manipulate the electronic structure of coupled quantum dots with an extremely high fidelity. As alternative control fields we apply both laser pulses as well as electric gates, respectively. We focus on double and triple quantum dots containing a single electron or two electrons interacting via Coulomb repulsion. In the two-electron situation we also briefly demonstrate the challenges of timedependent density-functional theory within the adiabatic local-density approximation to produce comparable results with the numerically exact approach.     

Magic numbers in vertically coupled quantum dots

A coupled quantum dot system has been studied by numerical diagonalization of the Hamiltonian. Discontinuous ground-state transitions induced by an external magnetic field have been predicted. Series of magic numbers of angular momentum which minimize the ground-state electron-electron interaction energy have been discovered. Theoretical explanations derived from the first principles have been formulated. Received: 13 July 1997 / Accepted: 7 October 1997     

Two-dimensional probe absorption in coupled quantum dots

We investigate the two-dimensional (2D) probe absorption in coupled quantum dots. It is found that, due to the position-dependent quantum interference effect, the 2D optical absorption spectrum can be easily controlled via adjusting the system parameters. Thus, our scheme may provide some technological applications in solid-state quantum communication.     

Detecting the chirality for coupled quantum dots

We propose a scheme to detect the chirality for a system consisting of three coupled quantum dots. The chirality is found to be determined by the frequency of the transition between chiral states under the chiral symmetry broken perturbation. The results are important to construct quantum gates and to demonstrate chiral entangle states in the triangle spin dots.     

Optical control in coupled two-electron quantum dots

The dynamics of two electrons in a 2-dimensional quantum dot molecule in the presence of a time-dependent electromagnetic field is calculated from first principles. We show that carefully selected microwave pulses can exclusively populate a single state of the first excitation band and that the transition time can be further decreased by optimal pulse control. Finally we demonstrate that an oscillating charge localized state may be created by multiple transitions using a sequence of pulses.     

Polarization selective magneto-optical study on the coupled quantum dots using resonant excitation

We have studied a double-layer self-assembled quantum dot (QD) structures consisting of non-magnetic CdSe and magnetic CdMnSe. Transmission electron microscopy image shows that QDs are formed within the CdSe and CdMnSe layers, and they are vertically correlated in the system. The strong interband ground state transition was observed in magneto-photoluminescence (PL) experiments. In contrast to a typical behavior for many low-dimensional systems involving diluted magnetic semiconductors (DMSs), where PL signal dramatically increases when an external magnetic field is applied, we have observed a significant decrease of the PL intensity as a function of magnetic field in the double-layer structures where the alternating QD layers contain the DMS and non-DMS QDs. We attribute such effect to carrier transfer from non-magnetic CdSe dots to magnetic CdMnSe dots due to the large Zeeman shift of the band edges of DMS QDs in magnetic field. Since the band alignment of QD structure strongly depends on the spin states of system, we performed polarization-selective PL measurement to identify spin-dependent carrier tunneling in this coupled system.     

Simulation of a quantum NOT gate for a single qutrit system

A three-level system based an a three-level atom interacting with a detuned cavity is considered. Because of the fact that the three-level atom defines a total normalized state composed of superposition of three different single-level states, it is assumed that such a system implements a qutrit. In order to achieve a quantum NOT gate for a single qutrit, the respective Schrödinger equation is solved numerically within a two-photon rotating wave approximation. For small values of one-photon detuning, there appear decoherence effects. Meanwhile, for large values of one-photon detuning, an ideal quantum NOT gate for a single qutrit is achieved. An expression for the execution time of the quantum NOT gate for a single qutrit as a function of the one-photon detuning is found.