ИССЛЕДОВАНИЕ ЭРОЗИЙ НОГО ДЕЙСТВИЯ ИМПУЛЬ СНЯХ ЭЛЕКТРИЧЕСКИХ РАЗРЯ ДОВ С СЛАБЫМ ТОКОМ

50–100 , 1–2 1–10 . - . - . , , - . -.     

КОРРЕКЦИОННЫЕ ФАКТО РЫ ПРИ АБСОЛЮТНОЙ ДОЗ ИМЕТРИИ ПЛОСКИХ ИСТОЧНИКОВβ-ИЗЛУЧЕНИЯ С ПОМОЩЬЮ СЧЕТЧИКА ГЕЙГЕРА-МЮЛ ЛЕРА

n n, n , .     

On the photo-electroluminescence of ZnS-Cu

The influence of weak ultra-violet irradiation on the brightness waves of electroluminescence is investigated for two types of ZnS-Cuphosphors. The observed effects (increase in brightness in the primary peak and its phase shift, the disappearance of the secondary peak) are explained on the basis of present-day conceptions on electroluminescence.

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ZnS-Cu

ZnS-Cu. ( , ) .

     

ЛОКАЛЬНЫЕ КОЛЕБАНлЯ ДВУХАТОМНОЙ ЛлНЕЙНО Й ЦЕПОЧКл С ДЕФЕКТАМл

. n : , . npou u , n . n n npocm .     

The elastic coupling between longitudinal and transversal vibrations оf isotropic rods II. Rods of circular cross-section

The new approximative method for calculating the frequencies of longitudinal vibrations of isotropic homogeneous rods described in part I. is used for rods of circular crosssection. Similarly to the rods of rectangular cross-section there does not exist any dead zone of frequencies.

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II.

, I. (. . 366), . , , .

     

The movement of single 90° domain walls of BaTiO3 in an alternating electric field

Single crystals of BaTiO₃, containing one 90° domain wall, were used to study the origin and character of the movement of such a wall in an alternating electric field having a frequency of 50 c/s. The experimental results are discussed from the phenomenological point of view.

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90- BaTiO₃

iO₃, 90- , 50 Hz. .

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The authors would like to thank A. Glanc for preparing the crystals for measurement, V. Dvoák, J. Kaczér and V. Janovec for fruitful discussions.     

The change in primary extinction during decomposition of a super saturated solid solution 1. System Al-Ag

On the basis of the correlation of diffraction data (intensity and width) of a precipitate with the intensity of reflection of a matrix solid solution it is shown that the change in primary extinction during the decomposition of a solid solution of Agin Alis caused by the precipitation of the phase Ag₂Aland not by the production of lattice defects (zones, stacking faults).

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I. Al-Ag

( ) , Ag Al Ag₂Al, ( , ).

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Reported in part at the VIth Scientific Technical Conference on the Application of X-rays held in Leningrad in 1958.

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The author thanks M. Mikovský for preparing the single crystals of the alloy Al-Ag having a high primary extinction and J. Laek and Prof. J. Bedná for carefully checking their homogeneity and chemical composition.     

ГАЛЬВАНОМАГНИТНЫЙ Э ФФЕКТ В ОБЛАСТИ ТЕМПЕРАТУРЫ КЮРИ

. - II- . .     

Two-barrier detector

The paper describes the principle of a detector with two opposite surface barriers and the experimental verification of its functioning. The detector permits double the effective depth to be attained on the material with a given bias voltage. The principle of opposite barriers also permits a reduction in the system of dE/dx andE detectors to one detector.

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. . dE/dx E .

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The authors thank A. Irra for carefully preparing the plates, K. Putz and J. imková for very effective help in measuring on the cyclotron and the members of of the cyclotron staff for their cooperation.     

The distribution of dislocations in silicon iron single-crystals grown from the melt

The distribution of dislocations in a crystal of an Fe-4.2% Si alloy prepared from the melt is studied microscopically and, by X-ray diffraction after rendering them visible by anodic dissolving. The dislocations are also studied inside the crystal by successively grinding the surface. The density of the dislocations inside the blocks is determined by calculation from microphotos, the density of the dislocations forming the boundaries between the blocks by measuring the angles between the lattices of neighbouring blocks. It is found that the dislocations are distributed very unevenly in the crystal and most of them form complicated boundaries of blocks, similarly as with ionic crystals. The distribution of dislocations is also discussed from the point of view of their formation and conclusions are reached as to the preparation of single crystals having a smaller number of dislocations.

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Fe-Si,

- Fe-4,2%Si, , . . , , — . , , . .

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The author is indebted to Candidates of Mathematics and Physics, F. Kroupa and J. Kaczér, for careful reading and advice whereby they helped to give greater depth and accuracy to this paper. He thanks Z. Tahal and M. Honegrová for initiative shown in helping to prepare the single crystals and during exacting experimental work, and S. Kadeková for aid in adjusting the spectrometer.     

Polarization of photo-luminescence of ZnS: Cu monocrystals

Different models of luminescence centres are discussed on the basis of measurements of the composition of ZnS monocrystal photo-luminescence in different polarizations and temperature dependence of the degree of polarization. Those of the models submitted by Birman, which assume the polarization to be due to the different force of the oscillators for transitions withEc andEc, or models assuming luminescence polarization to be due to the orientation of the luminescence centres, agree with the results of experiments, i.e. the temperature independence of the degree of polarization and the conformable spectral composition of both polarizations. It is also shown that measurements made up to now of the degree of polarization must be taken as orientational as a consequence of the depolarizing influence of the diffused rays of luminescence on its value.

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ZnS: Cu

ZnS , . , . . , , , E E, , . , , - .

     

ЗАВИСИМОСТЬ ПОЧЕРНЕ НИЯ ФОТОГРАФИЧЕСКОЙ ЭМУЛЬСИИ ОТ ЭНЕРГИИβ-ИЗЛУЧЕНИЯ

, - - . , - , , :³²P,³⁵S ⁹⁰Sr+⁹⁰Y.     

Mikrophy'sikalische Vorgänge,die die Entstehung der Schnellen Schichtungswellen in der Neonglimmentladung bedingen

Zusammenfassung Im nachstehenden Artikel werden mikrophysikalische Vorgänge behandelt, die das Auftreten schneller Schichtungswellen in Neonglimmentladungen veranlassen können. Es werden sowohl die qualitativen Abhängigkeiten, als auch die ziffernmäigen Werte der Parameter der Schichtungswellen mit den charakteristischen Gröenwerten der in diesem Entladungstypus vor sich gehenden Vorgänge verglichen. Auf Grund der vorgenommenen Vergleiche kann gesagt werden, da die Relaxationszeiten der schnellen Wellen durch die Diffusionslebensdauer der atomaren, bzw. molekularen Ionen gegeben sind.

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,

, . , . , , .

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Zum Schlu danken wir F. Kroupa und V. Krejí für die aufmerksame Lesung der Arbeit und wertvolle Hinweise.     

К теории коэрцитивно й силы и кривой намагничивания

. , , . .     

К процессам в электро дных оБластях в силъноточных кратк овременных электрических разря дах

.

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On processes in electrode spaces of short-time high-intensity electric discharges

The conditions and causes of the interrupted emission of the vapours of the material of short-time high-intensity electric discharge electrodes are discussed on the basis of earlier and new observations.

     

РЕАКЦИЯ (γ, р) НА КОБАЛЬ ТЕ

- , Li(, ) ( =17,6. 14,8 MeV). , u . , gQ=0,74+-0,16 MeV ⁵⁸Fe E ^* : 6,76; 6,44; 5,90; 5,47; 4,98; 4,35; 3,50; 3,20 MeV. , .     

Approximate calculation of frequencies of localized vibrations

An exact calculation of the frequencies of localized vibrations in a crystal with defects meets with considerable difficulties and therefore only the simplest cases have been calculated [9, 10]. An approximate calculation is confined to computing the frequencies of a system composed of several atoms in the neighbourhood of the defect. The interaction between this system and the other atoms of the lattice, which however are immobile in this approximation, is taken into consideration. Since the analytical estimate of the approximation is very rough, the approximate and exact calculations have been compared for some concrete cases (Fig. 1, 2). It is clear from these calculations that the use of the proposed approximation leads to good results.

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, [9, 10]. , . , , . , (. 1, 2). , .

     

ФОТОЭЛЕКТРИЧЕСКИЕ С ВОЙСТВА АНТИМОНИДА ГАЛЛИЯ

(GaSb), - 120–340 °K. : E₂=(0,773–0,75.10^–6 T ²) ., - .     

К ВОПРОСУ О ФОТОПРОВО ДИМОСТИ ФОТОГРАФИЧЕСКОЙ ЭМУ ЛьСИИ

) . , , , ; , , . . , .