LiMgPO_4:Tm,Tb的热释光和光释光陷阱参数

采用高温固相法合成了LiMgPO_4:Tm,Tb粉末样品,测定了热释光陷阱参数激发能E和频率因子s.用脉冲退火和多次退火方法研究了其光释光陷阱参数E和s,并与用多速法得到的热释光的结果进行了比较.对不同β射线剂量照射的样品发光曲线的研究表明,300°C高温峰属于一级动力学发光峰.通过对热释光和光释光陷阱的相关性研究表明,经200°C预热的热释光信号(对应于300°C高温峰)和光释光信号很有可能来自于同一深度的陷阱.     

从热释光曲线同时确定电子复合与俘获之比及陷阱深度

复合发光的本质是两种载流子的复合,但其衰减规律则视具体情况可以从一个极限(指数)变到另一个极限(抛物线),即复合发光是一个连续变化的过程。这主要取决于导带电子的行为,导带电子的行为可以用电子与离化发光中心复合与被陷阱俘获之比来表示。加热发光是在变化温度下的发光弛豫,它既与复合与俘获之比有关,还是陷阱深度的函数,因此在利用加热发光曲线测定陷阱深度时,要同时确定这两个参数。利用热释光动力学模型及其原理,对其发光过程进行了分析,解释了热释光过程既不是一个单分子过程也不是一个双分子过程,这两个过程实际是两个极端情形,都是近似。文章同时利用一些工具软件具体计算了ZnS:Cu, Co的陷阱深度及电子复合与俘获概率之比,精确的计算了这些参数,得n₀ =2.6, ε=0.86eV。     

GdVO4:Eu3+的热释光研究

GdVO4:Eu^3 有着十分优良的发光特性，它发光强度高，特别是具有很好的温度特性，在室温以上发光强度随温度的升高而增强，很利于在高温下使用此材料。本文对它的热释光进行了研究，其热释光峰值分别位于193，235和304K，根据计算可知它们的陷阱深度分别为0.39,0.47和0.61eV，陷阱的主要来源可能是F^ ,F和钒空位；Eu^3 掺入导致的晶格畸变，其中最主要的来源可能是空位导致的。     

Radiation effect on the 400-nm-thermoluminescence emission of a potassium-rich feldspar

The UV-blue thermoluminescence (TL) emission of exsolved and twinned potassium feldspars is potentially valid to be employed in the field of dating and retrospective dosimetry. This paper reports about the following results: (i) The dose dependence of the 400 nm TL intensity of a K-rich feldspar exhibits an excellent linearity in the range of 50 mGy–8 Gy. (ii) The stability of the TL signal after 6 months of storage, shows an initial rapid decay (ca. 45%) maintaining the stability from 40 days onwards which indicates that the electron population decreases asymptotically by the X-axis and the involved electrons are located in deeper traps at room temperature. The fading process can be fitted to a first-order decay equation of the sort y=y₀+A exp(−x/t). (iii) The tests of thermal stability at different temperatures confirm a continuous trap distribution with progressive changes in the glow curve shape, intensity and temperature position of the maximum peak. According to this behaviour some physical parameters are defined.     

Lifetime estimation of thermoluminescence traps in granitic quartz

Abstract

Thermoluminescence (TL) traps in granitic quartz are potential geochronometers for ages of up to billions years. TL sensitivity is believed to be a measure of the population of TL traps. Their lifetimes can be roughly estimated either by isothermal annealing or by an empirical approach. The former is applicable to radiation sensitive traps corresponding to > 200°C TL when first order kinetics is assumed. The lifetimes are found to be several orders longer than those of trapped electrons. The lifetimes of thermally sensitive traps (< 200°C TL) are estimated from empirical curves that are constructed from data from granitic quartz of known age. It is found that the lifetime increases with the trap depth.     

Thermoluminescence kinetic study of binary lead-silicate glasses

This paper describes a detailed experimental study of the thermoluminescence (TL) properties of four binary lead-silicate glasses, with PbO concentrations ranging from 32% to 62% in mole percent. The TL glow peaks between room temperature and 300 °C were analyzed using a systematic thermal cleaning technique. The T_max-T_stop and E-T_stop methods of analysis were used to identify the number of peaks under the glow curves, and to obtain the activation energy E for each TL trap. A computerized glow curve fitting analysis is used to fit the experimental data to four first-order peaks with maxima at temperatures of 54, 80, 110 and 210 °C, as measured with a heating rate of 2 °C/s. The kinetic parameters of the glow-peak at 210 °C were confirmed by using phosphorescence decay methods of analysis. The TL traps associated with the low-temperature TL peak at 54 °C are found to depend strongly on the PbO concentration of the samples, while the higher-temperature TL peaks show a behavior independent of the PbO concentration. The activation energy E and frequency factor s of the low-temperature TL trap associated with the peak at 54 °C are consistent with a trap involving a delocalized transition through the conduction band. However, the activation energies and frequency factors for the higher-temperature TL traps are consistent with traps involving localized transitions via an excited state below the conduction band. The data suggest that these higher-temperature TL traps are associated with the common silicate matrix in these binary silicate glasses.     

The contribution of hole traps to thermoluminescence of the dosimetric peak in anion-defect α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> single crystals

The thermoluminescent properties of anion-defect alumina single crystals with different FWHMs of the main (dosimetric) peak at 400–500 K are studied. New experimental evidence in favor of the hole nature of traps associated with the high-temperature part of this peak are presented. The introduction of hole trap centers into analysis provided theoretical justification for the experimentally observed dependences of the thermoluminescence (TL) intensity, the temperature position of the main peak, and its FWHM on the occupancy of deep traps. The hole nature of traps of the high-temperature part of the main TL peak is confirmed by the results of examination of specific TL features of shallow trap centers, which govern TL at 350 K, and the temperature variation of the main TL peak spectrum.     

Effect of annealing temperature on determining trap depths of quartz by various heating rates method

The aim of this study is to determine the trap parameters (trap depth E, frequency factor s) of quartz using various heating rates method and also to investigate the effect of annealing temperature on determining trap depths. The method is based on the positions of the thermoluminescence peaks, obtained from the change in temperature of the peak at maximum caused by changing the heating rate at which the sample is measured. In the present work, powder quartz samples were annealed first at different temperatures before irradiation. Then samples irradiated to different doses were measured with a TL reader at different heating rates and the glow curves were recorded. In order to calculate the trap depth E and the frequency factor s, the glow parameter T_m was determined experimentally from the glow curve by measuring the shift of the maximum peak temperature depending on heating rate β. The calculation of trap parameters was repeated for each annealing temperature. Then the effect of annealing temperature on trap depths calculated by the various heating rates method was evaluated.     

Temperatur- und Zeitabhängigkeit der Verzögerten Elektronenemission

Occupied traps responsible for delayed electron emission show an exponential decay. From the form of a single glowmaximum one can determine the temperature dependence of the decay constant of the traps of one sort. The decay constant is shown to have the form

$$\lambda (T) = \lambda _0 \exp ( - \varepsilon /kT).$$     

Thermoluminescence and optically stimulated luminescence disadvantages of α-Al2O3:C crystal grown by the temperature gradient technique

Recently, α-Al₂O₃:C crystal with highly sensitive thermoluminescence (TL) and optically stimulated luminescence (OSL) has been successfully grown by the temperature gradient technique. This paper investigates the heating rate dependence of TL sensitivity, light-induced fading of TL signals and thermal stability of OSL of α-Al₂O₃:C crystals. As the heating rate increases, the integral TL response decreases and the dosimetric glow peak shifts to higher temperatures in α-Al₂O₃:C crystals. Light-induced fading of TL increases with the irradiation dose, and TL response decreases as the exposure time increases, especially in the first 15 minutes. With the increasing intensity of the exposure light, the TL fading of α-Al₂O₃:C crystal increases sharply. The OSL response of as-grown α-Al₂O₃:C crystal is quite stable below 373 K and decreases sharply for higher temperatures.     

Estimating the parameters of traps in quartz by the variable energy of stimulation optically stimulated luminescence (VES-OSL) method

Optical-cross section that is a trap parameter estimated from the measurements of optically stimulated luminescence (OSL) is not a uniquely determined physical quantity. It depends not only on temperature and the energy of stimulation light but also, in the simplest case, on the optical depth of trap, the frequency of vibration mode and on the Huang-Rhys factor, i.e. the average number of phonons involved in the process of optical excitation of electrons from trap to conduction band. Conventional OSL measurement techniques do not enable to determine directly these parameters but they could be estimated by applying the variable energy of stimulation optically stimulated luminescence (VES-OSL) method. Recently it was put in to practice and the first VES-OSL curves were presented. In this study the outcomes of VES-OSL experiments are presented together with the first attempt of direct estimating the optical depth of traps active in OSL process in quartz.     

The effects of deep trap population on the thermoluminescence of Al2O3:C

The influence of deep traps on the 450 K thermoluminescence (TL) peak of Al₂O₃:C is studied. Depending upon the sample and on the degree of deep trap filling, features such as the TL width, area and height can vary considerably. These effects are interpreted to be due to: (a) sensitivity changes introduced by competition mechanisms involving deep electron and hole traps, and (b) the multiple component nature of the 450 K TL peak. The influence of the deep traps on the TL was studied using different excitation sources (beta irradiation or UV illumination), and step annealing procedures. Optical absorption measurements were used to monitor the concentration of F- and F⁺-centers. The data lead to the suggestion that the competing deep traps which become unstable at 800–875 K are hole traps, and that the competing deep traps which become unstable at 1100–1200 K are electron traps. Both the dose response of the TL signal and the TL sensitivity are shown to be influenced by sensitization and desensitization processes caused by the filling of deep electron and hole traps, respectively. Changes in the TL peak at low doses were also shown to be connected to the degree of filling of deep traps, emphasizing the influence of deep trap concentration and dose history of each sample in determining the TL properties of the material. Implications of these results for the optically stimulated luminescence properties are also discussed.     

Temperature dependence of two-beam coupling and dark decay in photorefractive BaTiO3

The temperature dependence of two-beam coupling and dark decay in photorefractive BaTiO₃ is reported. We show that the competition between deep and shallow traps depends on temperature and writing intensity, and influences two-beam coupling and dark decay. The dynamics of dark decay, characterized by a fast decay of partial erasure and a subsequent slow decay, is influenced by the presence of deep and shallow traps. Partial erasure, due to thermal excitation of charges from the shallow traps, decreases with temperature and increases with writing intensity. The time constant of the slow decay, due to thermal excitation of charges from the deep traps, depends strongly on temperature, but not on the writing intensity. At room temperature, the existence of deep and shallow trap leads to intensity-dependent photorefractive gains. As temperature increases, the influence from the shallow trap decreases, and the photorefractive gain becomes independent of the intensity. However, at much higher temperatures (100°C), the photorefractive gain resumes its dependence on intensity due to an increase in dark conductivity at elevated temperature.     

Investigation of the trap state of Sr2MgSi2O7: Eu2+, Dy3+ phosphor and decay process

The thermoluminescence glow curves of Sr₂MgSi₂O₇: Eu²⁺, Dy³⁺ phosphor were measured after various delay times. A single trap center is confirmed that conforms to a kinetics model with order greater than 1, leading to a suppression of TL intensity and a high temperature shift of the TL peak with longer delay times. A constant trap depth supports this phenomenon. Further, the decay curve of the afterglow and the change in initial trapped carrier concentration can be fitted using general-order kinetics and the fitting results show that the afterglow is close to a second-order kinetics process, which implies that most of the released carriers are retrapped.     

Post-IR IRSL production in perthitic feldspar

A museum sample of perthitic feldspar was used to study the production of post-IR IRSL signals. It was found that traps responsible for low temperature (∼230 °C) TL peaks play an unexpectedly important role in post-IR IRSL production. During the production of the IRSL signal during low temperature IR stimulation (100 °C), electrons are optically transferred from IRSL traps into these TL traps which have been emptied by the preceding preheat at 320 °C. Subsequent heating to 300 °C causes thermal transfer of these electrons from these traps back into previously emptied IRSL traps which are related to the high temperature TL peaks. IR stimulation of these electrons results in post-IR IRSL. Thus the initial source of the post-IR IRSL signal is the same as the IRSL signal, with a role being played by intermediate traps that give rise to TL signals between 200 and 250 °C, and the final source is similar to that of the IRSL signal. Therefore the post-IR IRSL signal is a by-product of the production of the IRSL signal. It was also found that post-IR IRSL production with high post-IR IR stimulation temperatures (e.g. >230 °C) additionally includes a small contribution from the post-IR isothermal decay of high temperature TL peaks that are not sensitive to IR stimulation at low stimulation temperatures.     

Interactive process in the mechanism of thermostimulated luminescence in anion-defect α-Al2O3 crystals

A study of the role of deep traps in the specific features of the thermoluminescence (TL) of anion-defect α-Al₂O₃ single crystals is reported. The existence of deep traps is proven by direct observation of the associated TL peaks. Experimental support for the effect of deep-trap filling on the main characteristics of the main TL peak at 450 K is presented. A model involving trap interaction is proposed, which differs radically from the others described in the literature by taking into account the temperature dependence of the carrier capture probability by deep traps. This model was used to calculate the dependences on heating rate and deep-trap filling of the main parameters of the main TL peak for the crystals under study (TL yield, glow-curve shape, and sensitivity to the stored light sum), which were found to be close to those observed experimentally. Fiz. Tverd. Tela (St. Petersburg) 40, 229–234 (February 1998)     

Nonlinear dose dependence of TL and LM-OSL within the one trap-one center model

In a recent paper, it has been shown that strong sub-linearity of the occupancy n₀ of trapping states far from saturation can be explained by the simplest model of one trap-one recombination center (OTOR). In the present work we report on results of numerical simulation of dose dependence of the TL maximum under similar conditions. In some cases, the TL maximum is found to be strictly proportional to the filling of the traps, but this is not always the case. Different sublinear dose-dependence functions of the trap occupancy and the maximum TL are demonstrated. With the same sets of parameters, curves of LM-OSL have also been simulated; superlinear as well as sublinear dependencies on the excitation dose have been found.     

Optical depth of traps in AL2O3:C determined by the variable energy of stimulation OSL (VES-OSL) method

Standard methods of OSL measurements (CW-OSL or LM-OSL) do not allow for the direct determination of optical depth of traps. The variable energy of stimulation optically stimulated luminescence (VES-OSL) method gives such possibility. It consists in optical stimulation with the continuous increase of stimulation light energy and is analogous to the glow curve method in TL measurements. The VES-OSL curve shape and maximum position can be regulated by the stimulation photon flux, the rate of stimulation energy increase and by measurement temperature. This allows for detecting the OSL from very deep traps that give the TL signal overlapping with strong incandescence. The VES-OSL measurements carried out for Al₂O₃:C showed that traps having the optical depth between 2.0 and 2.8 eV are responsible for the OSL signal related to TL peak at about 200 °C. The OSL signal from the much deeper traps from the range 2.8–3.3 eV was also detected. The TL signal related do these traps cannot be detected below 500 °C.     

Optical excitation of trapped charges in quartz, potassium feldspars and mixed silicates: The dependence on photon energy

Optical excitation of trapped charges has been studied by stimulating them with photons of energies from 1.8 to 2.7 eV and measuring the resulting luminescence at higher photon energies. The samples studied were quartz, potassium feldspar and fine-grained silicate extracts from natural sediments. The initial luminescence intensity and its decay as the traps are emptied have been used to gain information about the traps contributing to the emission. For the quartz studied the data are well explained by excitation from a single trap. The excitation spectra for potassium feldspars and mixed silicates show evidence of two different traps, the deepest of which is seen to give rise to the most luminescence. Its optical trap-depth may be more than 2.4 eV while the depth of the shallow trap appears to be about 2.1 eV. In nature, the deeper trap will probably not be well bleached during deposition in all aqueous environments, and for optical dating of water-laid sediments selective sampling of the shallow trap photons with energies less than 2.3 eV for stimulation may prove beneficial.     

A percolation study of RTS noise in deep sub-micron MOSFET by Monte Carlo simulation

Based on percolation theory and random telegraph signal (RTS) noise generation mechanism, a numerical model for RTS in deep submicron metal-oxide-semiconductor field-effect transistor (MOSFET) was presented, with which the dependence of Tc/Te (where Tc=capture time, Te=emission period ) on energy levels and trap depth with respect to the interface of traps can be simulated. Compared with experimental results, the simulated ones showed a good qualitative agreement.