Sr位Nd掺杂对SrBi2Nb2O9性能的影响及机理研究

采用传统固相法制备了(Sr1-3x/2Ax/2Ndx)Bi2Nb2O9(x=0,0.05,0.1和0.2)陶瓷,并系统研究了Nd离子取代Sr离子对SrBi2Nb2O9性能的影响及其作用机理.研究结果表明:Sr1-3x/2Ax/2NdxBi2Nb2O9的介电常数和介电损耗随温度变化的行为具有明显的离子松弛极化特征.Nd3+对Sr2+的部分取代,导致Sr1-3x/2Ax/2NdxBi2Nb2O9剩余极化强度Pr稍有下降,但其压电系数d33却有所增加,根据铁电热力学理论,这是Nd3+对Sr2+取代导致材料介电常数增大所致.Sr1-3x/2Ax/2NdxBi2Nb2O9的居里温度(TC)没有随Nd含量的增加而变化,拉曼光谱技术分析表明这是其NbO6八面体畸变程度没有发生变化所致.Nd3+取代Sr2+提高了材料的介电常数εr、压电系数d33、机电耦合系数Kp,同时降低了机械品质因数Qm,但是谐振频率温度系数C值没有改变.     

CO$lt;sub$gt;2$lt;/sub$gt;激光烧结合成负热膨胀材料Sc$lt;sub$gt;2$lt;/sub$gt;($lt;i$gt;M$lt;/i$gt;O$lt;sub$gt;4$lt;/sub$gt;)$lt;sub$gt;3$lt;/sub$gt;($lt;i$gt;M$lt;/i$gt;=W,Mo)及其拉曼光谱

用CO₂激光烧结合成了负热膨胀材料Sc₂(WO₄)₃和Sc₂(MoO₄)₃. 实验表明, 激光合成负热膨胀材料Sc₂(WO₄)₃和Sc₂(MoO₄)₃属于快速合成技术, 合成一个样品的时间仅需几秒到十几秒, 具有快速凝固的特征; X射线衍射和拉曼光谱分析表明, 所合成的材料为正交相结构, 且具有较高的纯度; 变温拉曼光谱分析表明, 所合成的材料在室温以上没有相变, 但可能有微弱的吸水性; 在对Sc₂O₃, MoO₃, WO₃, Sc₂(MoO₄)₃和Sc₂(WO₄)₃拉曼光谱分析的基础上, 给出了激光光子能量及原料和合成产物的声子能级图, 分析了激光烧结合成的机理. 激光光子能量转化为激发声子的能量是光热转化的主要通道, 原料在熔池中反应并快速凝固形成最终产物. 关键词： 负热膨胀材料 合成 激光烧结 拉曼光谱     

Ti掺杂W$lt;sub$gt;18$lt;/sub$gt;O$lt;sub$gt;49$lt;/sub$gt;纳米线的电子结构与NO$lt;sub$gt;2$lt;/sub$gt;敏感性能的第一性原理研究

采用基于密度泛函理论框架下的第一性原理平面波超软赝势方法,通过理论建模,研究了Ti掺杂的非化学计量比W₁₈O₄₉纳米线的几何与能带结构以及电子态密度,并通过进一步计算NO₂/Ti-W₁₈O₄₉纳米线吸附体系的吸附能、电荷差分密度与电荷布居,分析了Ti掺杂W₁₈O₄₉纳米线的气体吸附与敏感性能. 计算发现,Ti掺杂改变了W₁₈O₄₉纳米线的表面电子结构,引入的额外的杂质态密度和费米能级附近能带结构的显著变化,使掺杂纳米线带隙与费米能级位置改变,纳米线导电性能增强. 吸附在W₁₈O₄₉纳米线表面的NO₂作为电子受体从纳米线导带夺取电子,导致纳米线电导降低,产生气体敏感响应. 与纯相W₁₈O₄₉纳米线相比,NO₂/Ti-W₁₈O₄₉纳米线吸附体系内部存在更多的电子转移,从理论上定量地反映了Ti掺杂对改善W₁₈O₄₉纳米线气敏灵敏度的有效性. 对Ti掺杂纳米线不同气体吸附体系电子布居的进一步计算表明,Ti掺杂纳米线对NO₂气体具有良好的灵敏度和选择性. 关键词： 密度泛函计算 Ti掺杂 18O₄₉纳米线')" href="#">W₁₈O₄₉纳米线 气敏     

P掺杂对绿色荧光粉BaMgAl$lt;sub$gt;10$lt;/sub$gt;O$lt;sub$gt;17$lt;/sub$gt;:Mn$lt;sup$gt;2+$lt;/sup$gt;性能的影响

采用高温固相法合成P掺杂的BaMgAl₁₀O₁₇:Mn²⁺荧光粉,其中P通过（NH₄）₂HPO₄引入.利用X射线衍射谱、傅里叶变换红外光谱、扫描电子显微镜、能量色散谱、真空紫外光谱等研究了P掺杂对BaMgAl₁₀O₁₇:Mn²⁺晶体结构、微观形貌、发光性能等的影响.研究结果表明：（NH₄）₂HPO₄具有助熔剂的作用,它的加入有助于荧光粉的晶化,改善荧光粉的形貌.P掺杂进入晶格,使得晶胞参数变小,从而改变了Mn²⁺的晶体场环境,引起发射光谱蓝移,色坐标x值降低.P掺杂能有效提高基质对真空紫外线的吸收,从而提高真空紫外激发下的发光强度. 关键词： P掺杂 10O₁₇:Mn²⁺')" href="#">BaMgAl₁₀O₁₇:Mn²⁺ 晶体结构 真空紫外     

Eu$lt;sup$gt;2+$lt;/sup$gt;的掺杂浓度对BaAl$lt;sub$gt;2$lt;/sub$gt;Si$lt;sub$gt;2$lt;/sub$gt;O$lt;sub$gt;8$lt;/sub$gt;：Eu$lt;sup$gt;2+$lt;/sup$gt;荧光粉发光特性的影响

采用化学共沉淀法一次煅烧工艺合成了BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉.用X射线衍射仪和荧光分光光度计等对BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉的相结构、发光性能进行了测试.结果表明：化学共沉淀法一次煅烧工艺合成的BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉为单相;其激发光谱分布在240—410 nm的波长范围,峰值位于320 nm处,可以被InGaN管芯产生的350—410 nm辐射有效激发;在365 nm近紫外光的激发下,测得其发射光谱是位于465 nm附近的宽带峰.BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉的发光强度随Eu²⁺浓度的增大逐渐加强,当Eu²⁺掺杂的摩尔分数为3.5%时,发光强度达到最大值,而后随掺杂浓度的增加而减小,发生浓度猝灭;根据Dexter能量共振理论,该浓度猝灭是由于Eu²⁺的离子间交换相互作用引起的. 关键词： 2Si₂O₈：Eu²⁺')" href="#">BaAl₂Si₂O₈：Eu²⁺ 发光特性 蓝色荧光粉 化学共沉淀法     

晶粒尺寸对Ba$lt;sub$gt;0.70$lt;/sub$gt;Sr$lt;sub$gt;0.30$lt;/sub$gt;TiO$lt;sub$gt;3$lt;/sub$gt;陶瓷介电性能的影响规律及机理研究

通过制备晶粒尺寸处于0.1—10 μm之间的致密Ba_0.70Sr_0.30TiO₃陶瓷,系统研究了晶粒尺寸对居里温度T_C、铁电相介电常数ε_F、峰值介电常数ε_M的影响规律,并深入分析了其内在的影响机理.研究表明：晶粒尺寸减小时,T_C刚开始基本不变,直到晶粒尺寸小到一定程度时才开始降低,此变化规律可由Buesseum的内应力模型解释;随晶粒尺寸的增加,ε_F先增加后减小,此变化规律可由Shaikh的串并联模型来解释,主要影响因素有内应力、畴、晶界;ε_M随晶粒尺寸的增加,在晶粒尺寸较小时先增加后减小,晶粒尺寸较大时略有增加,此变化规律可由弥散相变理论和串并联模型共同解释,在晶粒尺寸较小时主要影响因素为内应力、微畴和晶界,晶粒尺寸较大时主要影响因素为晶界. 关键词： 0.70Sr_0.30TiO₃陶瓷')" href="#">Ba_0.70Sr_0.30TiO₃陶瓷 介电常数 居里温度 晶粒尺寸     

钙钛矿型锰氧化物(La$lt;sub$gt;0.8$lt;/sub$gt;Eu$lt;sub$gt;0.2$lt;/sub$gt;)$lt;sub$gt;4/3$lt;/sub$gt;Sr$lt;sub$gt;5/3$lt;/sub$gt;Mn$lt;sub$gt;2$lt;/sub$gt;O$lt;sub$gt;7$lt;/sub$gt;的磁性和电性研究

采用传统固相反应法制备钙钛矿型锰氧化物 (La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇多晶样品, X-射线衍射分析表明, 样品(La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇结构呈现良好的单相. 通过磁化强度随温度的变化曲线(M-T)、不同温度下磁化强度随磁场的变化曲线(M-H)和电子自旋共振谱发现: 在300 K以下, 随着温度的降低, 样品先后经历了二维短程铁磁有序转变 (T_C^2D ≈ 282 K)、三维长程铁磁有序转变(T_C^3D ≈ 259 K)、奈尔转变(T_N ≈ 208K)和电荷有序转变(T_CO ≈ 35 K); 样品 (La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇在T_N以下, 主要处于反铁磁态; 在T_C^3D达到370 K时, 样品处于铁磁-顺磁共存态, 在370 K以上时样品进入顺磁态. 此外, 分析电阻率随温度的变化曲线(ρ-T)得到: 样品在金属-绝缘转变温度(T_P ≈ 80 K)附近出现最大磁电阻值, 其位置远离T_C^3D, 表现出非本征磁电阻现象, 其磁电阻值约为61%. 在T_CO以下, 电阻率出现明显增长, 这是由于温度下降使原本在高温部分巡游的e_g电子开始自发局域化增强所致. 通过对 (La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇的ρ-T 曲线拟合, 发现样品在高温部分的导电方式基本遵循小极化子的导电方式. 关键词： 磁性 电性 金属-绝缘转变温度 电子自旋共振     

Co$lt;sub$gt;2$lt;/sub$gt;SnO$lt;sub$gt;4$lt;/sub$gt;/Graphene复合材料的制备与电化学性能研究

实验首先采用改进的Hummers法制备氧化石墨,然后以氧化石墨烯为前驱体,通过水热法将锡酸钴纳米颗粒均匀镶嵌在石墨烯薄膜基片上,最终获得Co₂SnO₄/Graphene镶嵌复合材料. 采用X射线衍射（XRD）、扫描电子显微镜（SEM）对材料的结构和形貌进行表征,通过恒电流充放电（CC）、循环伏安法（CV）与交流阻抗法（EIS）测试了材料的电化学性能. 实验结果表明,石墨烯良好的分散性及较高的电子导电率,可以提高锡酸钴材料的电化学性能,材料首次可逆容量达到1415.2 mA·h/g,50次循环后仍能保持469.7 mA·h/g的放电比容量. 关键词： 2SnO₄')" href="#">Co₂SnO₄ 石墨烯 电化学性能 锂离子电池     

La$lt;sub$gt;0.4$lt;/sub$gt;Ca$lt;sub$gt;0.6$lt;/sub$gt;MnO$lt;sub$gt;3$lt;/sub$gt;中Mn-位Fe和Cr掺杂对磁性质的影响

研究了Fe和Cr掺杂对La_0.4Ca_0.6MnO₃ 中电荷有序反铁磁基态的调控作用. 磁性质的测量结果表明, 两种离子掺杂均能有效抑制原型样品中的长程电荷有序相, 但是Fe离子掺杂样品均具有反铁磁的基态, 而Cr掺杂样品中则出现了显著的铁磁性. 结合电输运测量结果显示, Cr掺杂引起的铁磁态同时具有金属性, 表明其中是电子双交换作用占主导. 对比两种掺杂离子的电子结构发现, Cr离子空的e_g电子轨道促进了电子双交换作用, 而Fe掺杂则只是引入了不同的自旋交换作用, 导致自旋无序. 关键词： 磁性氧化物 反铁磁     

Ca$lt;sub$gt;2$lt;/sub$gt;Si（O$lt;sub$gt;4-$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;N$lt;sub$gt;$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;）：Eu$lt;sup$gt;2+$lt;/sup$gt;绿色荧光粉的制备及其发光性能

利用在Ca-Si-O干凝胶前驱体中添加Si₃N₄的方法于非还原气氛下合成了含N固溶体Ca₂Si（O_4-xN_x）：Eu²⁺绿色荧光粉. 通过X射线衍射仪、扫描电子显微镜以及荧光分光光度计分别分析了产物的物相结构、颗粒形貌和发光性能. 结果显示,Si₃N₄与前驱体的混合物在非还原气氛（纯氮气）下于1100℃焙烧后获得含N固溶体Ca₂Si（O_4-xN_x）：Eu²⁺荧光粉,特别是其中Eu³⁺被还原为Eu²⁺,产物的晶体结构与βup -Ca₂SiO₄相一致. Ca₂Si（O_4-xN_x）：Eu²⁺能够被270–400 nm 范围内的紫外线有效激发,其发射光谱呈宽带发射. 随着N含量的增加,发射峰出现一定程度红移（501–504 nm）,而且发光强度显著提高. 当Eu²⁺浓度为0.25 mol%时发光强度达最大值,浓度超过0.25 mol%时,发光强度显著降低,出现浓度猝灭 效应. 关键词： 白光LED 荧光粉 溶胶凝胶法 3N₄')" href="#">Si₃N₄     

W doping-dependent structural and ferroelectric properties of SrBi2Nb2O9 ferroelectric ceramics

The structural and ferroelectric characteristics of SrBi₂(Nb_1−xW_x)₂O₉ (x=0–0.12) ferroelectric ceramics were investigated. SrBi₂(Nb_1−xW_x)₂O₉ ceramics consisted of a single-phase layered perovskite structure when x was less than 0.06. Uniform microstructure and grain size reduction were observed after the introduction of W. The maximum remanent polarization of 16 μC/cm² appeared at x=0.03, and the coercive field decreased with increasing concentration of W. The ferroelectric behavior of SrBi₂(Nb_1−xW_x)₂O₉ ceramics is interpreted based on the Raman measurement.     

Impedance and dielectric studies of ferroelectric SrBi2Nb2O9 ceramics

This paper reports the dielectric and impedance characteristics of ferroelectric SrBi₂Nb₂O₉ (SBN) ceramics in the 100 Hz-1 MHz frequency range at various temperatures (300-823 K). A strong low frequency dielectric dispersion (LFDD) associated with an impedance relaxation has been found to exist in these ceramics in the temperature range 573-823 K. The Z″ of the AC complex impedance showed two distinct slopes in the frequency range 100 Hz-1 MHz suggesting the existence of two dispersion mechanisms. This non-ideal behavior has been explained on the basis of the expression, Z*=R₀/(1+(iω/ω₁)^m+(iω/ω₂)ⁿ) [J. Phys. Chem. Solids 53 (1992) 1] where ω₁ and ω₂ characterize the lattice response and the charge carrier behavior, respectively. The exponents m and n were obtained from the curve fitting. The exponent n was found to exhibit a minimum at the Curie temperature, T_c (723 K) whereas the m was temperature independent.     

Co含量对Bi6Fe2-xCoxTi3O18样品多铁性的影响

用固相工艺制备了Bi₆Fe_2-xCo_xTi₃O₁₈ (BFCT-x, x=0, 0.2, 0.6, 0.8, 1.0, 1.2, 1.6, 1.8, 和2.0)多铁陶瓷样品, 样品X射线谱分析发现, 随着Co含量的增加, 样品晶格常数出现了先增大后减小的变化. 室温下, BFCT-0.6样品呈现出相对较高的饱和磁化强度, 2M_s约为4.49 emu/g, BFCT-1.0具有最高的剩余磁化强度, 2M_r约为0.89 emu/g. Co含量在0.2 ≤x≤qslant 1.2范围内, 随着Co含量的增加样品顺磁–铁磁相变温度从752 K降至372 K. 小量的Co改善了样品的铁电性能, 当x=0.6时样品样品的铁电性能最佳, 随着含量增大样品铁电性能下降, 但当x >1.2时样品的铁电性能又得到了改善.     

脉冲形成线用CaO-TiO2-Al2O3基介质陶瓷介电性能

设计了一种脉冲形成线用新型CaO-TiO2-Al2O3基介质陶瓷体系,采用传统固相法通过优化组分和制备工艺,调控材料的微结构,获得了介电性能优异的介质陶瓷。其介电常数在15~35之间可调,介电损耗小于0.002,频率稳定性好。在厚度为1 mm时,介电强度高达50 kV/mm。研究了厚度对CaO-TiO2-Al2O3基介质陶瓷介电强度的影响规律,当厚度从1 mm减小到0.1 mm时,介电强度呈非线性增大,从50 kV/mm（1 mm厚样品）提高到92 kV/mm（0.1 mm厚样品）,可见,CaO-TiO2-Al2O3基介质陶瓷的电击穿与其机械损坏具有相似性。结合CaO-TiO2-Al2O3基介质陶瓷的化学组分和微观结构,CaO-TiO2-Al2O3基介质陶瓷优越的电击穿特性可以用弱点击穿理论解释。     

Synthesis and characterizations of Ho2O3 modified SrBi2Nb2O9 ceramics

SrBi_2-xHo_xNb₂O₉ (0?≤?x?≤?0.5) ceramics were prepared through the conventional solid state route. The materials have been characterized by XRD, FTIR and SEM. All compounds were pure and well crystallized. In FTIR spectroscopy, the spectral patterns of the crystal structures of these polyphases are unique and smoothly different from each other. The grains were prone to become spherical with increasing x. Dielectric and electrical properties of these materials as a function of temperature at different frequencies have been carried out. The dielectric constant and dielectric loss were found to decrease with an increase of the holmium concentration at room temperature. Reaching up to x?=?0.4 and x?=?0.5, the diffusivity increases, leading to the occurrence of relaxor behavior. 20–30 at.% Ho doping on the Bi-site can fill up the oxygen vacancies and decrease the AC conductivity. However, at higher doping levels greater than 40% holmium oxide, the AC conductivity is found to increase.     

Infrared-to-green upconversion luminescence and mechanism of Ho3+, Nd3+ and Yb3+ ions in oxyfluoride glass ceramics

New oxyfluoride glasses and glass ceramics co-doped with Nd^{3+}, Yb^{3+} and Ho^{3+} were prepared. The upconversion of infrared radiation into green fluorescence has been studied for Nd^{3+}, Yb^{3+} and Ho^{3+} in the transparent oxyfluoride glass ceramics. At room temperature very strong green upconversion luminescence due to the Ho^{3+}: ({}^5F_4, {}^5S_2)→{}^5I_8 transition under 800 nm excitation was observed in the glass ceramics. The intensity of the green upconversion luminescence in a 1mol% YbF_3-containing glass ceramic was found to be about 120 times stronger than that in the precursor oxyfluoride glass. The reason for the highly efficient Ho^{3+} upconversion luminescence in the oxyfluoride glass ceramics is discussed. The upconversion mechanism is also investigated.     

Electrical properties of SrBi2(Nb0.5Ta0.5)2O9 ceramics

Aurivillius SrBi₂(Nb_0.5Ta_0.5)₂O₉ (SBNT 50/50) ceramics were prepared using the conventional solid-state reaction method. Scanning electron microscopy was applied to investigate the grain structure. The XRD studies revealed an orthorhombic structure in the SBNT 50/50 with lattice parameters a=5.522 Å, b=5.511 Å and c=25.114 Å. The dielectric properties were determined by impedance spectroscopy measurements. A strong low frequency dielectric dispersion was found to exist in this material. Its occurrence was ascribed to the presence of ionized space charge carriers such as oxygen vacancies. The dielectric relaxation was defined on the basis of an equivalent circuit. The temperature dependence of various electrical properties was determined and discussed. The thermal activation energy for the grain electric conductivity was lower in the high temperature region (T>303.6 °C, E_a−ht=0.47 eV) and higher in the low temperature region (T<303.6 °C, E_a−lt=1.18 eV).     

Eu3+掺杂的铌酸钠钾陶瓷的制备及性能研究

采用固相烧结法制备了Eu³⁺掺杂的铌酸钠钾（KNN）陶瓷。用X射线粉末衍射仪、荧光光谱测试仪和LCR精确阻抗测试仪等对其结构、发光性能和介电性能进行表征。XRD结果显示样品为钙钛矿结构。荧光分析结果表明,致密度对KNN陶瓷材料发光性能有一定的影响,Eu³⁺掺杂量是影响其发光性能的重要因素。其中掺杂Eu摩尔分数为4%的样品在930℃焙烧后其发光最强,在396 nm紫外光激发下,发射光谱最强峰在614 nm,对应于Eu³⁺的⁵D₀-⁷F₂电偶极跃迁。样品经3 kV/cm、110℃极化30 min后进行压电性能检测,结果表明提高Eu³⁺掺杂量以及陶瓷的致密度,可改善压电性能。其中掺杂4%Eu的KNN压电常数D₃₃最大为98 pC/N,在1 kHz、100℃时,介电常数最小为217,介电损耗tanθ=0.199,且仍然保持较高的居里温度T_c=426℃。     

Effects of (LiCe) co-substitution on the structural and electrical properties of CaBi2Nb2O9 ceramics

The piezoelectric, dielectric, and ferroelectric properties of the (LiCe) co-substituted calcium bismuth niobate (CaBi₂Nb₂O₉, CBNO) are investigated. The piezoelectric properties of CBNO ceramics are significantly enhanced and the dielectric loss tanδ decreased. This makes poling using (LiCe) co-substitution easier. The ceramics (where □ represents A-site Ca²⁺ vacancies, possess a pure layered structure phase and no other phases can be found. The Ca_0.88(LiCe)_0.04□_0.04Bi₂Nb₂O₉ ceramics possess optimal piezoelectric properties, with piezoelectric coefficient (d₃₃) and Curie temperature (T_C) found to be 13.3 pC/N and 960 ℃, respectively. The dielectric and piezoelectric properties of the (LiCe) co-substituted CBNO ceramics exhibit very stable temperature behaviours. This demonstrates that the CBNO ceramics are a promising candidate for ultrahigh temperature applications.     

Dielectric and AC conductivity behavior of BaBi2Nb2O9 ceramics

The complex dielectric and AC conductivity response of BaBi₂Nb₂O₉ relaxor ferroelectric ceramics were studied as a function of frequency (100 Hz-10 MHz) at various temperatures. The observed dielectric behavior was characterized by two types of relaxation processes which were described by the ‘universal relaxation law’. The frequency dependence of conductivity which showed a classical relaxor behavior followed the Jonscher's universal law σ(ω)=σ₀+Aωⁿ. The exponent n exhibited a minimum in the vicinity of temperatures of dielectric anomaly while the pre-factor A showed a maximum. The temperature dependence of n followed the Vogel-Fulcher relation with activation energy of about 0.14 eV.