High density germanium nanowire assemblies: contact challenges and electrical characterization

The conductive properties of vertically aligned germanium nanowires, with mean diameters of 50 and 100 nm, within anodized aluminum oxide (AAO) templates have been characterized by conductive atomic force microscopy (C-AFM) and macrocontact measurements. C-AFM was used to determine the electrical transport properties of individual nanowires within the arrays, while macrocontacts were used to measure the mean current-voltage characteristics of groups of nanowires. Contact resistance between the nanowires and metal macrocontacts was minimized by polishing and gradual etching of the AAO surface, to expose the nanowires, prior to deposition of the contacts. Impedance measurements were used to analyze the importance of defects on the charge transport properties of the germanium nanowire arrays. Conductivity data from C-AFM and macrocontact measurements were found to be comparable suggesting that both methods are inherently suitable for evaluating the electrical transport properties of encapsulated nanowires within a matrix. These results are significant as the ability to make good ohmic contacts to nanowires, within well-defined arrays, is key for the future "bottom-up" fabrication of multilayered device architectures for future electronic and optoelectronic devices.     

Nanowires as building blocks for self-assembling logic and memory circuits

The concept of assembling electronic circuits from metal nanowires is discussed. These nanowires are synthesised electrochemically by using porous membranes as templates. High aspect ratio wires, which range from 15 to 350 nm in diameter and contain "stripes" of different metals, semiconductors, colloid/polymer multilayers, and self-assembling monolayers have been made by this technique. By using the distinct surface chemistry of different stripes, the nanowires can be selectively derivatized and positioned on patterned surfaces. This allows the current-voltage properties of single and crossed nanowire devices to be measured. Nanowire conductors, rectifiers, switches, and photoconductors have been characterized. Techniques are still being developed for assembling sublithographic scale nanowires into cross-point arrays for memory and logic applications.     

吡啶在几种金属纳米线阵列上的表面增强喇曼光谱

近20多年来利用表面增强喇曼光谱（SERS）的研究还仅限于Ag,Au,Cu这三种具有强SERS效应的金属,最近,田中群等利用合适的表面处理方法和共焦曼光谱技术成功地获得了许多无机离子和有机小分子吸附在一系列的过渡金属（如Pt,Ni,Fe,Pd,Rh,Co,Ru等）上的SERS光谱,拓宽了SERS的应用范围,但这些表面处理方法对基底进行处理时存在着较大的随机性,从而导致对所得SERS信号的解释困难。近年来通过自组装膜、模板合成等技术可得比较有序具有强SERS效应的或表面,例如Nie等最近发现尺寸分布狭窄的Ag溶胶粒子（约80－100nm）能诱导出巨大的SERS增强;Freeman和C tffumj m jf rbutb uqf At A 体微粒组装在聚合物基底上,制得高活性的SERS基底,以上工作都表明制备有序纳米级金属颗粒表面将推动SERS的应用和机理研究,迄今,3半导体纳米线阵列上的喇曼光谱已有报道,而利用金属纳米线阵列作为SERS基底除半于样模合成法制备的Ag纳米线阵列上的SERS之外,尚未见其它相关报道,本文主要研究样模合成法制备金属纳米线的过程,并以此为基底研究吡啶吸附的SERS光谱。     

Mimicking both petal and lotus effects on a single silicon substrate by tuning the wettability of nanostructured surfaces

We describe a new method of fabricating large-area, highly scalable, "hybrid" superhydrophobic surfaces on silicon (Si) substrates with tunable, spatially selective adhesion behavior by controlling the morphologies of Si nanowire arrays. Gold (Au) nanoparticles were deposited on Si by glancing-angle deposition, followed by metal-assisted chemical etching of Si to form Si nanowire arrays. These surfaces were chemically modified and rendered hydrophobic by fluorosilane deposition. Au nanoparticles with different size distributions resulted in the synthesis of Si nanowires with very different morphologies (i.e., clumped and straight nanowire surfaces). The difference in nanowire morphology is attributed to capillary force-induced nanocohesion, which is due to the difference in nanowire porosity. The clumped nanowire surface demonstrated the lotus effect, and the straighter nanowires demonstrated the ability to pin water droplets while maintaining large contact angles (i.e., the petal effect). The high contact angles in both cases are explained by invoking the Cassie-Baxter wetting state. The high adhesion behavior of the straight nanowire surface may be explained by a combination of attractive van der Waals forces and capillary adhesion. We demonstrate the spatial patterning of both low- and high-adhesion superhydrophobicity on the same substrate by the simultaneous synthesis of clumped and straight silicon nanowires. The demonstration of hybrid superhydrophobic surfaces with spatially selective, tunable adhesion behavior on single substrates paves the way for future applications in microfluidic channels, substrates for biologically and chemically based analysis and detection where it is necessary to analyze a particular droplet in a defined location on a surface, and as a platform to study in situ chemical mixing and interfacial reactions of liquid pearls.     

Assembly of multicellular constructs and microarrays of cells using magnetic nanowires

An approach is described for controlling the spatial organization of mammalian cells using ferromagnetic nanowires in conjunction with patterned micromagnet arrays. The nanowires are fabricated by electrodeposition in nanoporous templates, which allows for precise control of their size and magnetic properties. The high aspect ratio and large remanent magnetization of the nanowires enable suspensions of cells bound to Ni nanowires to be controlled with low magnetic fields. This was used to produce one- and two-dimensional field-tuned patterning of suspended 3T3 mouse fibroblasts. Self-assembled one-dimensional chains of cells were obtained through manipulation of the wires' dipolar interactions. Ordered patterns of individual cells in two dimensions were formed through trapping onto magnetic microarrays of ellipsoidal permalloy micromagnets. Cell chains were formed on the arrays by varying the spacing between the micromagnets or the strength of fluid flow over the arrays. The positioning of cells on the array was further controlled by varying the direction of an external magnetic field. These results demonstrate the possibility of using magnetic nanowires to organize cells.     

Supercritical fluid synthesis of metal and semiconductor nanomaterials

In the near future physical and economic constraints are expected to limit the continued miniaturisation of electronic and optical devices using current "top-down" lithography-based methods. Consequently, nonlithographic methods for synthesising and organising materials on the nanometre scale are required. In response to these technological needs a number of research groups are developing new supercritical fluids methodologies to synthesise and self-assemble "building blocks" of nanomaterials, from the "bottom-up", into structurally complex device architectures. This concept paper highlights some of the recent advances in the synthesis of metal and semiconductor nanoparticles and nanowires by using supercritical fluids. In addition, we describe an efficient supercritical fluid approach for constructing ordered arrays of metal and semiconductor nanowires within mesoporous silica templates.     

一种新的电化学方法制备CdS纳米线阵列

用一种新的电化学方法在多孔氧化铝模板中制备了CdS纳米线阵列体系,并用XRD、TEM对样品进行表征,结果显示CdS纳米线为立方相和六方相的多晶混合结构,对沉积机理进行了讨论.荧光光谱测量显示CdS纳米线阵列体系有三个强的紫外发光带和一个黄绿发光带.该文所使用的方法可以用来在氧化铝模板中制备其它材料的纳米线阵列体系.     

Length‐Dependent Charge Generation from Vertical Arrays of High‐Aspect‐Ratio ZnO Nanowires

Aqueous chemical growth of zinc oxide nanowires is a flexible and effective approach to obtain dense arrays of vertically oriented nanostructures with high aspect ratio. Herein we present a systematic study of the different synthesis parameters that influence the ZnO seed layer and thus the resulting morphological features of the free‐standing vertically oriented ZnO nanowires. We obtained a homogeneous coverage of transparent conductive substrates with high‐aspect‐ratio nanowire arrays (length/diameter ratio of up to 52). Such nanostructured vertical arrays were examined to assess their electric and piezoelectric properties, and showed an electric charge generation upon mechanical compressive stress. The principle of energy harvesting with these nanostructured ZnO arrays was demonstrated by connecting them to an electronic charge amplifier and storing the generated charge in a series of capacitors. We found that the generated charge and the electrical behavior of the ZnO nanowires are strictly dependent on the nanowire length. We have shown the importance of controlling the morphological properties of such ZnO nanostructures for optimizing a nanogenerator device.     

化学沉积法制备Ni-P纳米线与纳米管有序阵列

以多孔氧化铝膜为模板, 在室温下的酸性化学镀镍槽中通过化学沉积法生长出纳米线与纳米管有序阵列. 分别用X射线衍射仪(XRD)与透射电子显微镜(TEM)对纳米线、纳米管阵列进行表征. 并通过对纳米线与纳米管的生长方式进行分析比较, 系统地研究了多孔氧化铝模板的前处理对纳米阵列生长的影响. 结果表明, 生成的纳米线与纳米管均为非晶态的镍磷合金. 室温下镍纳米管的生成主要取决于敏化、活化过程, 而当纳米管的厚度达到一定程度后就不再随时间变化.     

CdSe纳米线阵列的制备及其表征(英)

通过在含有SeSO₃^2-和Cd²⁺的室温水溶液中，用模板-电沉积法在纳米孔阵列阳极氧化铝膜(AAM)模板中制备了高有序性的CdSe纳米线阵列，并对其形貌、结构和组分进行了表征。扫描电子显微镜(SEM)和透射电子显微镜(TEM)结果表明，纳米线阵列中的CdSe纳米线具有相同的长度和直径，分别对应于使用的AAM模板的厚度和孔径；X-射线衍射(XRD)和X-射线能谱(EDAX)结果表明，CdSe纳米线中Cd和Se的化学组成非常接近于1∶1，其结构为立方CdSe。另外，对模板-电沉积法制备CdSe纳米线的机理进行了讨论。     

Solution‐Liquid‐Solid Synthesis of Hexagonal Nickel Selenide Nanowire Arrays with a Nonmetal Catalyst

Inorganic nanowire arrays hold great promise for next‐generation energy storage and conversion devices. Understanding the growth mechanism of nanowire arrays is of considerable interest for expanding the range of applications. Herein, we report the solution‐liquid‐solid (SLS) synthesis of hexagonal nickel selenide nanowires by using a nonmetal molecular crystal (selenium) as catalyst, which successfully brings SLS into the realm of conventional low‐temperature solution synthesis. As a proof‐of‐concept application, the NiSe nanowire array was used as a catalyst for electrochemical water oxidation. This approach offers a new possibility to design arrays of inorganic nanowires.     

糖葫芦状二氧化钛纳米线阵列的制备及其光催化性能

 采用溶胶-电泳技术,在多孔阳极氧化铝(PAA)模板的有序孔洞中制备了高度取向的糖葫芦状TiO2纳米线阵列光催化剂,通过扫描电镜(SEM)和X射线衍射对样品进行了表征. 结果表明, TiO2纳米线为锐钛矿晶型,纳米线直径与PAA模板的孔径一致,且分布均匀. 纳米线取向性极好,每根纳米线都具有周期性凹凸,形似糖葫芦,因此命名为糖葫芦状TiO2纳米线阵列. 以甲基橙的降解反应评价了光催化剂的活性,与相同条件下制备的TiO2/玻璃膜相比, TiO2纳米线阵列在光照1 h时对甲基橙的降解率达到93.6%, 比前者提高了40.2%, 具有很好的光催化活性.     

Electrodeposited highly-ordered manganese oxide nanowire arrays for supercapacitors

Large arrays of well-aligned Mn oxide nanowires were prepared by electrodeposition using anodic aluminum oxide templates. The sizes of nanowires were tuned by varying the electrotype solution involved and the MnO₂ nanowires with 10 μm in length were obtained in a neutral KMnO₄ bath for 1 h. MnO₂ nanowire arrays grown on conductor substance save the tedious electrode-making process, and electrochemical characterization demonstrates that the MnO₂ nanowire arrays electrode has good capacitive behavior. Due to the limited mass transportation in narrow spacing, the spacing effects between the neighbor nanowires have show great influence to the electrochemical performance.     

Melting of indium,tin, and zinc nanowires embedded in the pores of anodic aluminum oxide

The melting temperature of metal nanostructures embedded in the matrix is an essential thermodynamic characteristic and a key parameter of the processes of their transformation into semiconductor structures. In this work, great attention is paid to the investigation of the behavior of one-dimensional metal nanocrystals near the melting point. For this purpose, the arrays of In, Sn, and Zn nanowires with different diameters have been electrochemically grown in the pores of anodic aluminum oxide (AAO), which is confirmed by the results of the microscopy and the phase X-ray diffraction analysis. The melting of nanowire arrays with different diameters has been investigated by means of differential scanning calorimetry (DSC). Aside from the expected melting temperature decrease, with decreasing the diameter of nanowires, it has been established that the melting peaks of nanostructure arrays have a complex shape that requires detailed elaboration in order to more accurately define the melting temperature. It is shown that the signal waveform while melting depends on geometric parameters of the structure, and the peak being mapped onto the DSC curve is the result of superposition of the melting peaks of nanowires with several characteristic dimensions. For the arrays of In, Sn, and Zn nanowires in AAO, there have been defined the melting temperature values according to the methodology offered, and there has been presented the dependence of the melting temperature decrease on the nanowires' diameter.     

以DNA为模板构造苯胺-DNA复合物纳米线和聚苯胺纳米导线

在溶液中, 以DNA为模板构造出了线性的苯胺-DNA复合物纳米线. 用压缩气流将得到的复合物纳米线拉直并固定到云母基底上. 用原子力显微镜(AFM)可观察到形貌规整的苯胺-DNA复合物纳米线. 苯胺单体在溶液中能从各个方向上组装到DNA分子上, 从而使DNA模板分子的表面包裹了一层苯胺. 以苯胺-DNA复合物纳米线为前驱体通过进一步化学氧化聚合得到了以DNA为模板的聚苯胺纳米导线.     

Magnetic field assisting DC electrodeposition: general methods for high-performance Ni nanowire array fabrication

One-dimensional magnetic nanowires are generally thought to show fine axial magnetism for their special high aspect ratio of the shape. However, the magnetic nanowire arrays fabricated by DC electrodeposition in template pores always show a low squareness in parallel to the nanowire direction. We developed two general and simple methods to improve the squareness of the as-fabricated Ni nanowire arrays parallel to the nanowire direction. The nanowires are found to be polycrystalline. The magnetism of the nanowire is also analyzed based on the microstructure.     

有序CdS纳米线阵列的制备和光学特性

应用直流电沉积法在多孔氧化铝模板中制备了高度有序的CdS纳米线阵列,并由XRD、Raman、SEM、TEM和HRTEM等进行物理化学表征.结果表明,沉积在多孔氧化铝模板中的CdS呈六角结构,c轴沿孔长度方向定向生长.紫外吸收光谱研究表明,随着纳米线尺寸的减小,纳米线阵列的吸收边向短波长方向移动,荧光光谱测量显示,CdS纳米线阵列的荧光强度高于氧化铝模板,而且在可见光区的荧光特性与激发波长无关.     

Conducting Polyaniline Nanowire Arrays Modified Electrode for High Performance Supercapacitor and Enhanced Catalysis of Nitrite Reduction

Vertically aligned conducting polymer nanowire arrays had great potential applications in supercapacitor electrode material and exhibited enhanced electrocatalytic behavior towards the reduction of nitrite. In this paper, a facial template‐free approach to synthesize large arrays of vertically aligned polyaniline (PANI) nanowires on electrochemically pretreated glassy carbon electrodes was reported by using a galvanostatic current method. The as‐prepared large arrays of PANI nanowires had very narrow diameters and were oriented perpendicular to the substrate, which was a benefit to the ion diffusion when being used as the supercapacitor electrode. The highest specific capacitance of PANI nanowire arrays was measured and kept high at a large charge‐discharge current density. Furthermore, it also can detect nitrite with ultrahigh sensitivity of 62.99 µA mM^?1 cm^?2 and a remarkable fast response time of less 1 s. The results indicated that the vertically aligned PANI nanowires could dramatically enhance the electrochemical performance.     

Tl_2O_3/聚-N-乙烯基咔唑复合纳米线的研究

微型化是纳米科技发展的关键驱动力之一，然而使用现行的光刻技术生产大规模集成电路器件的技术已经接近极限尺寸（～0．8μm）．1982年STM的研制成功使得在纳米尺寸上进行操作成为可能[1－3]同时，LB技术正在应用于纳米粒子薄膜的制备中[4]．进一步利用Iangmuir单层膜诱导控制     

Tl2O3/聚-N-乙烯基咔唑复合纳米线的研究

Stable monolayers of electropolymerized poly-N-vinylcarbazole (EPVK) and arachidic acid(AA) are obtained on a subphase of alkaline Tl2O3 colloidal solutions. As revealed by the atomic force microscope, there is phase separation in the mixed LB monolayers. Transmission electron microscopic observations reveal that ordered arrays of composite Tl2O3/Epvk nanowires are formed in the mixed monolayers. Formation of the composite nanowire arrays is attributed to the ordered adsorption of Tl2O3 colloidal particles along the polycationic EPVK chains. The composite nanowire array is 3.2nm wide with a spacing of 2.7nm.The composite nanowire arrays can also be formed when pure EPVK is used. Composite LB multilayers of Tl2O3/EPVK nanowire arrays are prepared. The bilayer spacing is 5.54nm.The present study is of importance to the fabrication of inorganic semiconductor/functional polymer composite nanowires.