Pulse characteristics of Hg0.8Cd0.2Te n +-p junctions

The pulse characteristics of Hg_0.8Cd_0.2Te n ⁺-p junctions are investigated. It is shown that the shape of the voltage pulse appearing in a junction on passage of a forward (reverse) current is determined by the recombination (generation) of nonequilibrium electrons in the hole region. An increase in the current pulse causes the appearance of an electric field, which draws electrons into the interior of the base region, and leads to variation of their lifetime because of the complex structure of the n ⁺-p junction. Zh. Tekh. Fiz. 67, 130–133 (July 1997     

Investigation of pulsed laser ablation process of Hg0.8Cd0.2Te

The vaporization threshold was measured under the irradiation of 1.064-μm, 10-ns pulsed laser. Then we calculated the vaporization temperature based on the conservation law of energy and analyzed the vaporization time based on our established model. These results coincided well with the information from the micrograph of scanning electron microscope (SEM) and the spectra of the plasma. Besides, the laser ablation rate was also computed and discussed theoretically.     

Experimental studies on low frequency noise of Hg0.8Cd0.2 Te photoconductors

Combined with the measurements of material characteristic parameters, detector function parameters and their temperature relation, a series of new noise experimental results on Hg_0.8Cd_0.2 Te photoconductor are obtained. The Hooge parameter from these measurements ranges from 1.7 x 10⁻³ to 8.7 x 10⁻⁵ for temperatures 90–300 K. The 1/ƒ noise spectrum increases with increasing background emission, which cannot be explained by Hooge's empirical formula. The 1/ƒ noise is less than the lower limit calculated by existing theory.     

On the activation energy of the electron liquid in Hg0.8Cd0.2Te

Recently we have shown that a magnetic field induced electron (Wigner) condensation takes places in Hg_0.8Cd_0.2Te. The correlated electrons behave like a viscous liquid with activated mobility [1]. We present the activation energy of the mobility at magnetic fields up to B = 20 T. The experimental data show that the strong increase of the activation energy with B at low fields slow down and even seems to saturate at magnetic fields above 20 T. Qualitatively this behaviour is expected for a magnetic field induced electron liquid.     

Low-temperature hot-electron energy relaxation in Hg0.8Cd0.2Te in extreme-quantum-limit magnetic fields

Energy relaxation time of hot electrons in Hg_0.8Cd_0.2Te at a lattice temperature of 1.5 K is calculated for quantizing magnetic flux densities of 4 and 6 T considering acoustic scattering via deformation potential and piezoelectric couplings. Band nonparabolicity, nonequipartition of phonons, screening of the scattering rates due to carrier space charge, and low-temperature broadening of the Landau level are incorporated. The calculated results agree qualitatively with experimental data.     

脉冲强激光破坏Hg0.8Cd0.2Te晶片材料的机理分析

 利用光学金相显微镜对TEA-CO₂脉冲强激光辐照的Hg_0.8Cd_0.2Te晶片表面进行了观察。在单脉冲能量为37.5 J，能量密度为937.5 J/cm²的强激光辐照下，晶片表面呈现出熔融迹象和大量的微裂纹，微裂纹密度从激光辐照区中心向外逐渐减少，裂纹沿晶体的(111)面扩展。随着脉冲连续作用次数的增加，晶片表面熔融更加剧烈，裂纹数目、裂纹深度和宽度都有所增加。分析认为：HgCdTe晶片的破坏与激光辐照能量、脉冲连续作用次数、激光场强分布、激光热应力、激光支持的燃烧波和物质的蒸发波等冲击波有关。     

脉冲强激光破坏Hg0.8Cd0.2Te晶片材料的机理分析

利用光学金相显微镜对TEA-CO2脉冲强激光辐照的Hg0.8Cd0.2Te晶片表面进行了观察。在单脉冲能量为37.5 J,能量密度为937.5 J/cm2的强激光辐照下,晶片表面呈现出熔融迹象和大量的微裂纹,微裂纹密度从激光辐照区中心向外逐渐减少,裂纹沿晶体的(111)面扩展。随着脉冲连续作用次数的增加,晶片表面熔融更加剧烈,裂纹数目、裂纹深度和宽度都有所增加。分析认为：HgCdTe晶片的破坏与激光辐照能量、脉冲连续作用次数、激光场强分布、激光热应力、激光支持的燃烧波和物质的蒸发波等冲击波有关。     

Defect related luminescence in Hg0.2Cd0.8Te nano- and micro-crystals grown by the solvothermal method

The photoluminescence (PL) properties of nano- and micro-crystalline Hg_1?xCd_xTe (x≈0.8) grown by the solvothermal method have been studied over the temperature range 10–300 K. The emission spectra of the samples excited with 514.5 nm Ar⁺ laser consist of five prominent bands around 0.56, 0.60, 0.69, 0.78 and 0.92 eV. The entire PL band in this NIR region is attributed to the luminescence from defect centers. The features like temperature independent peak energy and quite sensitive PL intensity, which has a maximum around 50 K is illustrated by the configuration coordinate model. After 50 K, the luminescence shows a thermal quenching behavior that is usually exhibited by amorphous semiconductors, indicating that the defects are related to the compositional disorder.     

Effect of vacancy charge state on positron annihilation in silicon

The charge-state-dependent lattice relaxation of mono-vacancy in silicon is studied using the first-principles pseu- dopotential plane-wave method. We observe that the structural relaxation for the first-neighbor atoms of the mono-vacancy is strongly dependent on its charge state. The difference in total electron density between with and without charge states in mono-vacancy and its relevant change due to the localized positron are also examined by means of first-principles simu- lation, demonstrating the strong interplay between positron and electron. Our calculations reveal that the positron lifetime decreases with absolute charge value increasing.     

碲镉汞材料中Hg空位缺陷的第一性原理研究

利用基于第一性原理的全电子势线性缀加平面波方法计算了在碲镉汞材料中Hg空位所引起的晶格弛豫以及空位对周围原子成键机制的影响.通过成键过程中电荷密度的变化以及电荷转移的讨论，论述了碲镉汞材料Hg空位引起的弛豫以及这种弛豫产生的主要原因.通过态密度的计算和分析，发现Hg空位的形成将导致第一近邻阴离子Te的5s态能量向高能端移动了055eV，并借助Te 5s态电荷密度与成键电荷密度的计算结果，分析了引起该能态能量平移的主要原因.通过带边态密度变化以及Kohn-Sham(KS)单电子能级的计算和分析，得出了Hg 关键词： 碲镉汞 Hg空位 线性缀加平面波方法     

Resonant 2D magnetopolarons in accumulation layers on n-Hg0.8Cd0.2Te

Cyclotron Resonance measurements on accumulation-layer electrons at anodic oxide films on n-(Hg,Cd)Te are reported. Up to six subband cyclotron resonances are observed and discontinuities are seen in the subband effective masses, due to resonant polaron effects. The coupling is strongest for the higher subbands, where it is enhanced over that for the bulk, and occurs at the “HgTe-like” LO phonon frequency. The behaviour of the lowest (i=0,1) subbands is more complex, with the coupling being weaker and the dominant interaction seeming to occur at the TO frequency for low values of N_S.     

Two-dimensional electron systems in inversion layers of p-type Hg0.8Zn0.2Te metal-insulator-semiconductor structures

Strong oscillations on capacitance and conductance have been observed in p-type Hg0.8Zn0.2Te metal-insulator-semiconductor structures, made by using a recent process for the interface passivation. This behaviour is attributed to a two-dimensional electron gas in the n-inversion layer and the variation of the conductance maximums with temperature indicates that the dominant perpendicular transport mechanism for electrons is an incoherent two-step tunnelling through deep levels in the gap. Three models have been used to describe the quantum confinement: the simple variational method, the triangular potential approximation and the propagation matrix method. The later approach takes into account the non parabolicity of the conduction band structure and uses a finite height barrier at the insulator-semiconductor interface. A very good agreement between experimental and calculated values for the two lowest subband energy is obtained. Received 9 February 1999     

X-ray Diffraction Study of Cd 0.8 Zn 0.2 Te Under High Pressure and Temperature

Energy dispersive X-ray diffraction using synchrotron radiation has been used to study phase transformations of Cd 0.8 Zn 0.2 Te under high pressure and temperature. We confirm the presence of a cinnabar phase between the zinc-blende and rock-salt phases. But contrary to the results in CdTe, this intermediate phase is found to be stable only on pressure decrease and in a narrower pressure and temperature range. Single-phase cinnabar patterns are obtained only at 300 and 373 K. At 673 K and above, even on pressure decrease, no evidence of the cinnabar phase is found. In this temperature range, a phase segregation phenomenon is observed in the zinc-blende phase during the zinc-blende transition in both upstroke and downstroke, and the retrieved sample at ambient conditions presents a double pattern corresponding to two different Zn contents.     

Observation of a new gettering mechanism in (Hg,Cd)Te

A new gettering mechanism is proposed for substitutional impurities which diffuse by an interstitial process. In this mechanism, an externally imposed gradient of self interstitials generates a gradient in impurity interstitials leading to the segregation of fast diffusing impurities to low interstitials, high vacancy regions. Data are presented to support this model in (Hg, Cd)Te alloys, as well as explicitly rule out gettering by dislocations, by segregation to precipitates, or by enhanced solubility arising from the interaction of the impurity with a varying Fermi level.     

Phase transformations and vacancy formation energies of transition metals by positron annihilation

The technique of the coincidence count rate at the peak of the angular correlation curve (CCR) in positron annihilation has been applied to the investigation of vacancy formation energies in thermal equilibrium in nickel, cobalt, and iron. The monovacancy formation energyE ^1v/F has been determined to (1.55±0.05) eV and (1.34±0.07) eV for nickel and cobalt, and (1.60±0.10) eV for α-iron, and (1.40±0.15) eV for γ-iron, respectively. The structural phase transformations in cobalt (693 K) and iron (1183 K, 1663 K) are exhibited by discontinuities of the CCR. In the case of cobalt the CCR follows exactly the change of the thermal expansion at the transition temperature. The temperature dependence of the CCR in the prevacancy region is found to be proportional to the thermal expansion for all metals investigated.     

Compositional dependence of positron annihilation in HgTl alloys

Ratios of coincidence counting rates of annihilation gammas at 0 and 10 milliradians for 13 atomic concentrations from 0 to 50% of thallium in liquid mercury were measured. A sharp discontinuity at about 5% of thallium indicates an abrupt change of cluster size and concentration, which may be related to the peaking of electric thermopower of the alloy.     

Evaluation of the formation entropy of a single vacancy by means of positron annihilation

Analyzing positron annihilation data it was found that the formation energy of a single vacancy is proportional to the characteristic temperature T_c in f.c.c. metals. Assuming that the equilibrium fractional concentrations of single vacancies at T_c are constant, one finds that the formation entropy of a single vacancy is (1.6 ± 0.1)k for all f.c.c. metals. For zinc and cadmium, the formation entropies are 2.5k and 3.3k respectively.