Electron paramagnetic resonance of hydrogen in silicon

A review of the investigations by means of electron paramagnetic resonance (EPR) of hydrogen and hydrogen-related defects in crystalline silicon is presented. The main features of the EPR center Si-AA9 (bond-centered hydrogen), which is known as the hydrogenic analogue of the anomalous muonium (Mu^*) in silicon, are discussed. It was found that the process of annealing the AA9 center is characterized by an activation energy, E = 0.48 ± 0.04 eV with a second-order pre-exponential factor, K₀ = (1.25 ± 2.5) × 10^-7 cm³/s.

A detailed investigation by EPR of the defect (Si-AA1), which we identify as the hydrogen-related shallow donor in a positive charge state, is also presented. In particular it is shown that the H-related shallow donor is a helium-like center and its wave function has C_2v symmetry. Moreover, the main features of the series of EPR spectra in silicon characteristic for the implantation of hydrogen are presented.     

Electron paramagnetic resonance of scandium in silicon carbide

The EPR spectra of scandium acceptors and Sc²⁺(3d) ions are observed in 6H-SiC crystals containing a scandium impurity. The EPR spectra of scandium acceptors are characterized by comparatively small hyperfine interaction constants, whose values are consistent with the constants for other group III elements in SiC: boron, aluminum, and gallium acceptors. The EPR spectra of scandium acceptors undergo major changes in the temperature interval 20–30 K. In the low-temperature phase the EPR spectra are characterized by orthorhombic symmetry, whereas the high-temperature phase has higher axial symmetry. The EPR spectra observed at temperatures above 35 K and ascribed by the authors to Sc²⁺(3d) ions, or to the A ²⁻ state of scandium, have significantly larger hyperfine structure constants and narrower lines in comparison with the EPR spectra of scandium acceptors. The parameters of these EPR spectra are close to those of Sc²⁺(3d) in ionic crystals and ZnS, whereas the parameters of the EPR spectra of scandium acceptors correspond more closely to the parameters of holes localized at group III atoms, in particular, at scandium atoms in GeO₂. It is concluded that in all centers the scandium atoms occupy silicon sites. Fiz. Tverd. Tela (St. Petersburg) 39, 52–57 (January 1997)     

Electron paramagnetic resonance of a nitrogen-related centre in electron irradiated silicon

The observation by electron paramagnetic resonance of a centre related to nitrogen as an impurity in silicon is reported. While all previously reported nitrogen-related centres in silicon were produced by nitrogen implantation, the present centre is observed after electron irridiation of aluminium-doped silicon at low temperatures. We tentatively identify the observed spectrum, labeled Si-NL26, with neutral interstitial nitrogen. Possible models for the incorporation of nitrogen in silicon, before the irradiation, after the irradiation and after thermal anneal, are discussed.     

Electron paramagnetic resonance and relaxation of amorphous silicon below 1 K

Amorphous silicon, generated within crystalline Si by ²⁸Si⁺ ion implantation, exhibits an electron spin relaxation rate which varies with temperature as T^2.37 between 0.3 and 4.2 K. These results exclude the current model of a phonon-limited, direct relaxation mechanism in a-Si. A relaxation process, consistent with the known temperature variation, is outlined. EPR signal strengths, relative to a known paramagnet at temperatures near 1.2 and 0.4 K, put limits on an antiferromagnetic Curie-Weiss temperature of 0?θ?0.06 K.     

Electron paramagnetic resonance in Kondo insulators

This review is devoted to the application of electron paramagnetic resonance (EPR) in the study of fluctuating-valence materials, which are characterized by a narrow gap in the electron energy spectrum (Kondo insulators or Kondo semiconductors). The authors’ papers on studying classical objects of this field of solid-state physics, SmB₆ and YbB₁₂, are considered as an illustration of the potentiality of the EPR method. Temperature dependences of the gap width in these materials were obtained, the static and dynamic Jahn-Teller effects on Sm³⁺ ions in SmB₆ were detected, and the formation of Yb³⁺ ion pairs and the spontaneous breaking of cubic symmetry in YbB₁₂ were observed. The results obtained indicate that preference should be given to the exciton-polaron model developed by Kikoin et al. for the ground state of Kondo insulators.     

Electron paramagnetic resonance of radiation-induced paramagnetic centers in an aerogel

Silicon oxide aerogel samples irradiated with x rays at room temperature have been analyzed using the electron paramagnetic resonance method. It has been found that three types of paramagnetic centers appear: paramagnetic centers with a g factor of 2.0035, centers associated with the presence of protons in SiO₂ globules, and centers in the adsorbed film on the aerogel surface. The fast (T _fast = 30 h) and slow (T _slow = 70 d) processes have been revealed in the recombination of these centers.     

Electron paramagnetic resonance radiation dosimetry in fingernails

There is now an increased need for accident dosimetry due to the increased risk of significant exposure to ionizing radiation from terrorism or accidents. In such scenarios, dose measurements should be made in individuals rapidly and with sufficient accuracy to enable effective triage. Electron paramagnetic resonance (EPR) is a physical method of high potential for meeting this need, providing direct measurements of the radiation-induced radicals, which are unambiguous signatures of exposure to ionizing radiation. For individual retrospective dosimetry, EPR in tooth enamel is a proven and effective technique when isolated teeth can be obtained. There are some promising developments that may make these measurements feasible without the need to remove the teeth, but their field applicability remains to be demonstrated. However, currently it is difficult under emergency conditions to obtain tooth enamel in sufficient amounts for accurate dose measurements. Since fingernails are much easier to sample, they can be used in potentially exposed populations to determine if they were exposed to life-threatening radiation doses. Unfortunately, only a few studies have been carried out on EPR radiation-induced signals in fingernails, and, while there are some promising aspects, the reported results were generally inconclusive. In this present paper, we report the results of a systematic investigation of the potential use of fingernails as retrospective radiation dosimeters.     

Electron paramagnetic resonance in deuterated nickel fluosilicate

Electron paramagnetic resonance measurements in single crystals of NiSiF₆. 6D₂O were made at K, Ku and Ka bands at 4.2 K and between 77 K and 300 K. The measured g values were in the range 2.23–2.26, while the zero-field splitting parameter D varied from ?(0.185 ± 0.005) cm^?1 at 4.2 K to ?(0.53 ± 0.01) cm^?1 at 298 K. The parameters of the trimolecular hexagonal unit cell were determined to be approximately a = 9.28 Å, c = 9.58 Å from powder X-ray diffraction measurements at room temperature.     

Electron paramagnetic resonance in Nd-Ag amorphous alloys

We have studied the EPR of Nd³⁺ ions in Nd_16.7Ag_83.3 amorphous alloys between 4.2 K and room temperature. The resonance observed above 100K at a field corresponding to a g ? 2.3 indicates the existence of sites having a non-axial crystal field of the form J²_x-J²_z.     

Electron paramagnetic resonance spectral studies on natural sapphire

EPR study of both blue and green sapphire samples confirms the presence of Cr(III) in four different octahedral sites. The g (1.98) value is the same but D values differ for the two the samples. The EPR spectra suggest that the blue sapphire contains more chromium than the green sapphire. No Fe(III) impurity was noted in the EPR spectrum     

Electron paramagnetic resonance investigation of molecular bond rupture due to ozone in deformed rubber

Electron paramagnetic resonance (EPR) provides a sensitive tool by which microscopic bond rupture can be monitored simultaneously with observations of macroscopic deformation and failure. Past techniques for studying fracture in semicrystalline polymers have been extended to investigate degradation of unfilled ruber in the presence of ozone. It was found that the rate of free radical production was linearly proportional to stretch ratio and ozone concentration and that stress relaxation and creep were not directly proportional to this production rate. The latter behavior was attributed to the particular dependence of crack density and growth on stress. It was concluded that at low strains, comparatively few surface cracks form; however, at higher strains, many more crack centers become active. Although many more surface cracks are present, they do not progress into the material as rapidly. Therefore, although more bonds were broken at higher strains and stresses, the stress relaxation rate and creep rates were not significantly increased.     

Electron paramagnetic resonance of impurities in uranium trichalcogenides

Uranium trichalcogenides US₃ and UTe₃ were examined by EPR. The measurements were performed at the X-band over temperature range 4.2–300K and with the magnetic field applied perpendicular and parallel to the (001) plane. The EPR spectra consist of two lines with g-factors about 2 and 4 respectively. Results are discussed in terms of interactions of the U⁴⁺ ion with impurities. A magnetic ordering in US₃ below 50 K is suggested.