用半导体环形激光器产生混沌信号

提出了一种由一个分布式反馈激光器为主激光器和一个半导体环形激光器为从激光器组成的主从式激光混沌系统方案,主激光器产生的光单向注入到从激光器中,通过调整注入系数、主从激光器的失谐频率和从激光器的偏置电流,使从激光器工作在混沌状态,输出混沌信号。从基于光注入条件下的环形激光器的速率方程组入手,数值模拟了主从激光器的失谐频率、注入系数和从激光器的偏置电流3个工作参量对从激光器输出动态的影响。研究表明:外光注入条件下,半导体环形激光器可以产生混沌信号。通过分析得出:当失谐频率为3.9 GHz、注入系数为0.07、偏置电流为81 mA时,环形激光器可以产生功率谱平坦、带宽较宽的高质量混沌信号。     

Chaos generation in a semiconductor ring laser with an optical injection

Two chaos generation schemes are demonstrated numerically based on a semiconductor ring laser (SRL) with either a constant or a chaotic optical injection from an external distributed feedback (DFB) laser. Under a certain bias current, the chaotic output can be generated by the SRL with appropriate injection parameters. Parameter map is achieved numerically to show types of oscillation in the SRL. Bifurcation diagrams and Lyapunov exponent spectra roughly describe the routes to chaos for the SRL with disturbance. A bandwidth-enhanced chaos generation can be describes based on the chaotic optical injection scheme. The bandwidth of the bandwidth-enhanced chaos generated is about 12 GHz, which achieves approximately a two-fold increase compared with the constant injection scheme.     

光注入提高半导体激光器混沌载波发射机的带宽

外光反馈下的半导体激光器可视为混沌载波发射机.数值研究发现，外部强光注入可以显著提高混沌载波发射机的带宽，带宽提高的程度在一定范围内与注入光的强度成正比.当外部光注入系数k_inj=0.39时，混沌载波的带宽由无光注入时的2.7GHz增大到14.5GHz，提高了5倍多.研究还发现，在相同的注入强度条件下，当注入光的频率比半导体激光器的中心频率高2—4GHz时，可实现最大限度的带宽增强.此外，适当提高半导体激光器的偏置电流也可以在一定程度上提高其产生的混沌载波的带宽. 关键词： 半导体激光器 混沌 带宽     

Enhancement of chaotic carrier bandwidth in laser diode transmitter utilizing external light injection

Semiconductor laser with optical feedback emitting chaotic optical signal can be treated as chaotic carrier transmitter. Based on laser rate equations, we numerically study the effect of external injection light on the bandwidth of chaotic carrier transmitter. Our numerical simulation shows that the bandwidth of the chaotic carrier transmitter can be enhanced significantly by external photons injection. Compared with the 2 GHz relaxation oscillation frequency of a solitary laser diode without optical injection, the bandwidth of a chaotic carrier transmitter is expanded to 14.5 GHz with injection parameter at k_inj = 0.39. Simulation results also demonstrate that the enhanced bandwidth depends obviously on the frequency detuning between the external injection laser diode and the chaotic carrier transmitter. The maximum bandwidth of the chaotic transmitter can be obtained when the frequency of the injected light is higher than the central frequency of the carrier transmitter between 2 GHz and 4 GHz.     

Modulation Induced Low-Frequency Fluctuations in Semiconductor Lasers with Optical Feedback and Their Suppression by Synchronous Modulation

Modulation induced low-frequency fluctuations (LFFs) of a semiconductor laser in the presence of optical feedback are investigated. LFFs are controlled to a synchronous oscillation when an appropriate modulation very close to the resonance frequency of the external cavity is applied to the injection current. The dependence of the frequency locking on the modulation frequency and depth is studied.     

Effect of the External Mirror Feedback Strength in the Dynamics and Spectrum of the Injected Semiconductor Lasers

We analytically investigate the effect of an external mirror on the stability of an injected semiconductor laser, the latter treated as injected damped oscillators. In the studied configuration, the injected semiconductor laser with an external mirror is under the influence of a chaotic oscillating optical signal that is generated by a similar semiconductor master laser. We derive our results in terms of the damping rate and resonance frequency. We show that the external mirror can eliminate the unstable modes of the injected laser at low frequencies. Furthermore, the mirror can enhance the damping of the oscillation modes of the injected semiconductor laser; consequently, the driven response of the injected laser may have a broad spectrum, even wider than that of the chaotic driving signal. We also show results for the bandwidths of the injection amplitude and phase increment as functions of the injection rate and feedback strength of the external mirror. In addition, we use bifurcation and time-series curves to describe the dynamical behavior of the injected laser. We identify the feedback strength of injected laser, relative to that of the master laser, which induces synchronization between the injected-laser oscillation modes and the master laser.     

Wavelength tuning characteristics of a fabry-perot semiconductor laser with an external short cavity

Wavelength tuning characteristics of a Fabry-Perot semiconductor laser with an external short cavity are analyzed, in which the oscillation wavelength can be changed by slightly altering the external cavity length. Analysis is based on rate equations for an optical power and carrier density. It is shown that the wavelength tuning range is dominated by a change of carrier density through the effect of carrier-induced refractive index change in the active layer of a laser diode. This depends on effective coupling coefficients of the optical field iteratively reflected back to the laser diode by the external mirror, and on reflection coefficients of an anti-reflection coated laser facet and the external mirror which compose the external cavity. The effective coupling coefficient is also derived using the waveguide theory and Kirchhoff ’s theory. Finally, an unstable condition which may limit a stable wavelength tuning range is shown by results of a linear stability analysis of rate equations.     

存在外部光反馈的半导体激光器的相位噪声

本文在理论上研究了由于外部光反馈引起的半导体激光器的相位噪声.理论分析是通过引入一个反馈耦合率K和线性化速率方程,导出了半导体激光器相位噪声功率谱密度的表达式.这表明相位噪声功率谱密度随外腔长度而周期性地漂移,且功率谱密度的峰值随外部反馈耦合率而发生很大的变化.     

Instantaneous frequency measurement applied to semiconductor laser relaxation oscillations

The frequency of relaxation oscillations in the output power of lasers, particularly semiconductor lasers, is an important parameter which can be used to inform other fundamental laser variables, for comparison with expected theory, and to show the effect of external influences, such as optical feedback, by a change in value. Thus, precision measurement of the relaxation frequency is important. Instantaneous frequency measurement algorithms are applied to experimental semiconductor laser relaxation-oscillation signals to determine whether reliable values can be extracted, for an extended range of injection current, as compared to direct measurement and fast Fourier transform techniques. Improvement is achieved but, more importantly, the technique clearly shows when other oscillations, such as those due to packaging, connectorization and power supply, dominate the oscillatory component of the output power, at low injection currents. The work further supports the finding that only mid-range injection currents can be used for reliable precision relaxation oscillation frequency measurement.     

外光注入半导体激光器实现时钟分频

从理论和实验上研究了利用光注入半导体激光器对高重复速率光脉冲产生的周期振荡和时钟分频现象.结果表明，光注入半导体激光器引起的二倍周期振荡是使注入脉冲重复频率分频的直接原因.通过耦合速率方程，数值模拟了半导体激光器在外光注入时输出光的时间序列和功率谱，并且分析了激光腔内各种周期振荡的特征.研究表明，当注入光使半导体激光器出现稳定的二倍周期振荡，且注入光的重复频率为此振荡频率的二倍时，时钟分频即可产生实验中，采用重复频率为6.32GHz的光脉冲注入Fabry-Perot激光器，实现了3.16GHz时钟分频信号 关键词： 周期振荡 时钟分频 光谱侧带 光注入     

大幅度增加弛豫振荡频率来实现毫米级外腔半导体激光器的外腔机制转换

混沌外腔半导体激光器输出明显存在弛豫振荡特征,弛豫振荡频率小于外腔振荡频率时,外腔半导体激光器输出态是短腔机制;反之,外腔半导体激光器输出态是长腔机制.首先对比分析了弛豫振荡频率为5.6 GHz,腔长对频谱有效带宽的影响.然后同时调节注入电流和载流子寿命来大幅度地增加弛豫振荡频率.最后在弛豫振荡频率为40 GHz、腔长为毫米级(4—20 mm)时,实现由短腔机制到长腔机制的转换,进而分析了外腔反馈率和外腔长对外腔半导体激光器频谱带宽的影响.分析结果表明:短腔机制下,输出混沌态不稳定,0.1 mm的偏差就会导致混沌态与非混沌态之间的转化;长腔机制下,输出混沌态稳定,输出混沌区域较大,证明长腔机制下更有益于获得宽带连续的混沌区域.在弛豫振荡频率为40 GHz、外腔长度为毫米级时,实现了外腔半导体激光器的长腔机制,从而增大了高带宽混沌的参数空间.     

外光注入半导体激光器实现重复速率可调全光时钟分频

采用Fabry-Perot半导体激光器作为全光时钟分频器件,利用光注入半导体激光器产生的非线性动力学特性,实现了光脉冲的重复速率在9.0 GHz到19.8 GHz范围内连续可调的全光时钟分频. 同时利用半导体激光器速率方程,对脉冲光注入半导体激光器产生时钟分频进行了数值模拟. 实验和模拟结果表明半导体激光器在光注入的驱动下处于一周期振荡状态,当一周期振荡的二次谐波频率接近脉冲光的重复速率时,其二次谐波和基频被脉冲光同时锁定,此时将输出频率为脉冲光重复速率一半的时钟信号. 同时研究了波长失谐量和注入光功率对 关键词： 周期振荡 时钟分频 光注入 非线性动力学     

Dynamics of Semiconductor Lasers with Optical Feedback from Photorefractive Phase Conjugate Mirror

The dynamics of semiconductor lasers with photorefractive phase conjugate optical feedback are experimentally studied. Photorefractive fringes considered here are rather static compared with time fluctuations of laser output power. Therefore, it is expected that a semiconductor laser with photorefractive feedback shows similar dynamics to those with conventional optical feedback. We examine relaxation oscillation and external cavity modes of laser output power in the presence of photorefractive phase conjugate feedback. It is proved that the dynamics of photorefractive phase conjugate feedback are fundamentally the same as those of conventional optical feedback.     

Observation of multi-path interference in broad-area semiconductor lasers with optical feedback

Multi-path interference effects induced by optical feedback in broad-area semiconductor lasers is experimentally studied. An external mirror and an internal laser cavity form a closed composite optical feedback loop. For a very small tilt of the external mirror for the exit facet along the stripe width of the active layer, the light emitted from the laser undergoes multi-path reflections in the composite cavity, and we therefore observe multi-path interference effects of the laser oscillations for a small mirror tilt. The laser output power always shows the fundamental mode of the single feedback loop together with an oscillation of a certain higher multi-path loop. The laser oscillation and the beam profile are strongly dependent on the tilt. We observed up to a nine-fold multi-path interference in the experiment.     

Frequency stabilization and output power undulations of diode lasers with feedback by volume holographic gratings

The mode-hop behavior and the power characteristics of a laser diode with wavelength-selective optical feedback are experimentally investigated. The feedback is provided by external volume holographic gratings, also called ‘Bragg mirrors’, at normal incidence. We demonstrate that a Bragg mirror forces a laser diode to operate only within a narrow wavelength range, and that the emission wavelength of the laser diode is stabilized against variations of the injection current. Moreover, we present periodic undulations of the power characteristics of the laser, depending on the driving current. They can be qualitatively explained with a simple model which takes into account that the threshold gain in the laser system strongly depends on the wavelength.     

Multi-state optical flip-flop memory based on ring lasers coupled through the same gain medium

We investigate a system consisting of multiple ring lasers coupled by a single gain medium. All the ring lasers share a common feedback arm. The output power of an individual laser shows periodic oscillations as a function of time. The periodicity of the oscillation is determined by the ratio of the roundtrip times of the feedback arm and the ring cavity. In the case that two of such ring lasers are coupled, either their oscillation periodicities are synchronized, or the system is bi-stable. In the latter operation regime, the system can act as an optical flip-flop memory whose state be switched by injection of external light. The concept can be extended to multi-state operations; an eight-state optical flip-flop memory is experimentally demonstrated.     

Wavelength Tuning Characteristics of a Vertival Cavity Surface Emitting Laser Diode with an External Short Cavity

The characteristics of a wavelength tunable vertical cavity surface emitting laser diode (VCSEL) with an external short cavity are analyzed, in which the oscillation wavelength can be changed over several tens of nanometers with a nearly constant optical power by slightly altering the external cavity length. Analysis is based on rate equations for the optical power and carrier density, taking the effect of carrier-induced refractive index change into consideration, together with the study of behaviors of a complex resonator. The reflection coefficient r₂ of a laser facet facing the external mirror is shown to affect notably the characteristics of wavelength tuning, optical power and carrier density for a change of the external cavity length. It is also noticed that the wavelength change for this length becomes slower with relatively larger r₂ due to an increasing contribution of the effect of carrier-induced refractive index change, within the optical gain spectrum of the laser diode.     

Analysis of gain distribution in cladding-pumped thulium-doped fiber laser and optical feedback inhibition problem in fiber-bulk laser system

The steady-state gain distribution in cladding pumped thulium-doped fiber laser(TDFL) is analytically and numerically solved based on the rate equations including loss coefficients and cross relaxation effect. With the gain curve, a problem, which is named optical feedback inhibition(OFI) and always occurs in tandem TDFL-Ho:YAG laser system, is analyzed quantitatively. The actual characteristics of output spectra and power basically prove the conclusion of theoretical analysis. Then a simple mirror-deflected L-shaped cavity is employed to restrain the external feedback and simplify the structure of fiber-bulk Ho:YAG laser. Finally, 25 W of 2097-nm laser power and 51.2% of optical-to-optical conversion efficiency are obtained, and the beam quality factor is less than 1.43 obtained by knife-edge method.     

各向异性光反馈注入的垂直表面发射激光器的矢量偏振模转换机理

数值研究了各向异性光反馈注入的垂直表面发射激光器(VCSEL)的矢量偏振模转换机理,研究结果表明,首先,当注入电流接近阈值电流时,由VCSEL的外部参数和偏振器控制的光反馈注入量中各偏振模的能量决定VCSEL 输出的偏振态.其次,由偏振器控制的各向异性光反馈注入引起的VCSEL输出偏振态呈周期性变化.另外,当由偏振器控制的反馈注入量中的x^偏振和y^偏振模能量相当时, x^偏振模和y^偏振模之间竞争激烈,而激光器外部微小的扰动都会打破这两种偏振模竞争 关键词： 各向异性光反馈 垂直表面发射激光器 矢量偏振模     

Experimental Investigation of Stability Enhancement in Semiconductor Lasers with Optical Feedback

The stability enhancement of laser output power for the change of external cavity position in semiconductor lasers with optical feedback is observed by experiment. The relaxation oscillation frequency which plays an important role in the dynamics of the nonlinear system is also investigated as a function of the external cavity length. The period of the stability enhancement along the position of the external cavity is exactly coincident with the length corresponding to the relaxation oscillation frequency of the solitary laser. The experimental results are compared with theoretical and excellent coincidence between the two is found.