Investigation of the characteristics of GIDL current in 90nm CMOS technology

A specially designed experiment is performed for investigating gate-induced drain leakage (GIDL) current in 90nm CMOS technology using lightly-doped drain (LDD) NMOSFET. This paper shows that the drain bias $V_{\rm D}$ has a strong effect on GIDL current as compared with the gate bias $V_{\rm G}$ at the same drain--gate voltage $V_{\rm DG}$. It is found that the difference between $I_{\rm D}$ in the off-state $I_{\rm D}-V_{\rm G}$ characteristics and the corresponding one in the off-state $I_{\rm D}-V_{\rm D}$ characteristics, which is defined as $I_{\rm DIFF}$, versus $V_{\rm DG}$ shows a peak. The difference between the influences of $V_{\rm D}$ and $V_{\rm G}$ on GIDL current is shown quantitatively by $I_{\rm DIFF}$, especially in 90nm scale. The difference is due to different hole tunnellings. Furthermore, the maximum $I_{\rm DIFF }$($I_{\rm DIFF,MAX})$ varies linearly with $V_{\rm DG}$ in logarithmic coordinates and also $V_{\rm DG}$ at $I_{\rm DIFF,MAX}$ with $V_{\rm F}$ which is the characteristic voltage of $I_{\rm DIFF}$. The relations are studied and some related expressions are given.     

新型双级间接蒸发冷却系统性能理论研究

本文提出了一种新型双级间接蒸发冷却(IEC-TIEC)系统,其中普通叉流回热式间接蒸发冷却器(IEC)与热电辅助间接蒸发冷却器(TIEC)串联运行。建立了该系统的物理及数学模型,在不同热电制冷模块的运行参数(工作电流及模块数量)条件下,对比分析了新型双级间接蒸发冷却系统与单级热电辅助间接蒸发冷却(TIEC)系统的性能,结果表明IEC-TIEC系统的COP与露点效率均优于单级TIEC系统;研究了一次空气入口参数(温度、相对湿度、质量流量)对IEC-TIEC系统的COP与露点效率的影响规律。此外,对系统的四种不同质量流量分配比进行了优化分析,结果表明,存在最佳的质量流量分配比使得系统COP最大;在系统总换热面积一定的约束条件下,对系统中叉流回热式间接蒸发冷却器换热面积占系统总换热面积的比值进行了优化。     

Magnetic tunnel junction thermocouple for thermoelectric power harvesting

The thermoelectric power generated in magnetic tunnel junctions (MTJs) is determined as a function of the tunnel barrier thickness for a matched electric circuit. This study suggests that lower resistance area product and higher tunnel magnetoresistance will maximize the thermoelectric power output of the MTJ structures. Further, the thermoelectric behavior of a series of two MTJs, a MTJ thermocouple, is investigated as a function of its magnetic configurations. In an alternating magnetic configurations the thermovoltages cancel each other, while the magnetic contribution remains. A large array of MTJ thermocouples could amplify the magnetic thermovoltage signal significantly.     

新型双级间接蒸发冷却系统性能理论研究

本文提出了一种新型双级间接蒸发冷却(IEC-TIEC)系统,其中普通叉流回热式间接蒸发冷却器(IEC)与热电辅助间接蒸发冷却器(TIEC)串联运行。建立了该系统的物理及数学模型,在不同热电制冷模块的运行参数(工作电流及模块数量)条件下,对比分析了新型双级间接蒸发冷却系统与单级热电辅助间接蒸发冷却(TIEC)系统的性能,结果表明IEC-TIEC系统的COP与露点效率均优于单级TIEC系统;研究了一次空气入口参数(温度、相对湿度、质量流量)对IEC-TIEC系统的COP与露点效率的影响规律。此外,对系统的四种不同质量流量分配比进行了优化分析,结果表明,存在最佳的质量流量分配比使得系统COP最大;在系统总换热面积一定的约束条件下,对系统中叉流回热式间接蒸发冷却器换热面积占系统总换热面积的比值进行了优化。     

液氦温区脉管制冷的实验研究

本文研制了一台可以用于低温超导磁体冷却的液氦温区分离型二级脉管制冷机．单独测试第一级最低达到了13．8K，是单级脉管制冷机最低制冷温度新纪录；在40K温度下具有55．9W制冷量，可望在高温超导磁体冷却方面获得广泛应用．使用单压缩机单旋转阀驱动二级脉管，二级最低温度达到了2．6K，在4．2K下有590mW制冷量，同时一级在36．7K有15W的制冷量，满足小型低温超导磁体冷却的要求．     

Effect of STI-induced mechanical stress on leakage current in deep submicron CMOS devices

The shallow trench isolation (STI) induced mechanical stress significantly affects the CMOS device off-state leakage behaviour. In this paper, we designed two types of devices to investigate this effect, and all leakage components, including sub-threshold leakage ($I_{\rm sub})$, gate-induced-drain-leakage ($I_{\rm GIDL})$, gate edge-direct-tunnelling leakage ($I_{\rm EDT})$ and band-to-band-tunnelling leakage ($I_{\rm BTBT})$ were analysed. For NMOS, $I_{\rm sub}$ can be reduced due to the mechanical stress induced higher boron concentration in well region. However, the GIDL component increases simultaneously as a result of the high well concentration induced drain-to-well depletion layer narrowing as well as the shrinkage of the energy gap. For PMOS, the only mechanical stress effect on leakage current is the energy gap narrowing induced GIDL increase.     

微型层式热电模块制冷特性研究

本文建立了微型层式热电模块的仿真模型,讨论了不同的层数、层厚度,层导热系数对层式热电模块制冷效果的影响。研究发现:二层热电臂结构最优,冷、热端热电臂导热系数梯度越大,制冷效果越好,且热电臂厚度在不同导热系数梯度下存在最优值。另外,在微型层式热电模块中,接触效应会显著影响其制冷性能,因此在实际设计及应用研究中不可忽略。     

Exact Vibration Solutions of Nonhomogeneous Circular,Annular and Sector Membranes

In this paper, exact vibration frequencies of circular, annular and sector membranes with a radial power law density are presented for the first time. It is found that in general, the sequence of modes may not correspond to increasing azimuthal mode number $n$. The normalized frequency increases with the absolute value of the power index $|ν|$. For a circular membrane, the fundamental frequency occurs at $n = 0$ where $n$ is the number of nodal diameters. For an annular membrane, the frequency increases with respect to the inner radius $b$. When $b$ is close to one, the width $1 − b$ is the dominant factor and the differences in frequencies are small. For a sector membrane, $n − 1$ is the number of internal radial nodes and the fundamental frequency occurs at $n = 1$. Increased opening angle $β$ increases the frequency.     

热电制冷LED自然对流散热的设计与优化

为提升高热流密度下LED灯具的自然对流散热性能,以一款基于热电制冷（TEC）的单颗LED小型灯具模组为研究对象,在采用实验测量和回归拟合准确获得TEC性能参数的基础上,建立了有无TEC参与散热的等效热路模型,并选择合理的数学公式对其进行性能描述,进而遵循本文设计的计算流程快速得到各种散热性能数据。LED模组的散热分析表明：在恒定的LED热功率下,施加最佳的TEC电流可获得最高的散热性能;LED热功率越低,安装TEC的散热性能越比常规方法优异。经遗传算法优化前后的性能对比分析表明：优化后结构中TEC的合理工作区明显增大,能满足LED更高功率的散热需求;当LED为0.493 W时,优化后结构的最佳结温仅为15.66℃,远低于30℃的环境温度。基于TEC实验数据建立的等效热路模型,能为装配TEC的LED模组提供快速完整的散热设计分析与结构优化的合理方案。     

The role of hydrogen in hydrogenated microcrystalline silicon film and in deposition process with VHF-PECVD technique

The role of hydrogen in hydrogenated microcrystalline silicon ($\mu $c-Si:H) thin films in deposition processes with very high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) technique have been investigated in this paper. With \textit{in situ} optical emission spectroscopy (OES) diagnosis during the fabrication of $\mu $c-Si:H thin films under different plasma excitation frequency $\nu _{\rm e }$ (60MHz--90MHz), the characteristic peak intensities ($I_{{\rm SiH}^*}$, $I_{{\rm H}\alpha^*}$ and $I_{{\rm H}\beta ^*}$) in SiHVHF-PECVD技术 氢化微晶硅 光发射光谱 薄膜学VHF-PECVD technique, hydrogenated microcrystalline silicon, role of hydrogen, optical emission spectroscopyProject supported by the Natural Science Foundation of Guangdong Province, China (Grant No 05300378), the State Key Development Program for Basic Research of China (Grant Nos G2000028202 and G2000028203) and the Program on Natural Science of Jinan University, Guangzhou, China (Grant No 51204056).2005-11-252005-11-252006-01-05The role of hydrogen in hydrogenated microcrystalline silicon （μc-Si：H） thin films in deposition processes with very high frequency plasma-enhanced chemical vapour deposition （VHF-PECVD） technique have been investigated in this paper. With in situ optical emission spectroscopy （OES） diagnosis during the fabrication of μc-Si：H thin films under different plasma excitation frequency Ve （60MHz-90MHz）, the characteristic peak intensities （IsiH＊, IHα＊ and IHβ＊ ） in SiH4＋H2 plasma and the ratio of （IHα＊ ＋ IHβ＊ ） to IsiH＊ were measured; all the characteristic peak intensities and the ratio （IHα＊ ＋ IHβ＊ ）/IsiH＊ are increased with plasma excitation frequency. It is identified that high plasma excitation frequency is favourable to promote the decomposition of SiH4＋H2 to produce atomic hydrogen and SiHx radicals. The influences of atomic hydrogen on structural properties and that of SiHx radicals on deposition rate of μc-Si：H thin films have been studied through Raman spectra and thickness measurements, respectively. It can be concluded that both the crystalline volume fraction and deposition rate are enhanced with the increase of plasma excitation frequency, which is in good accord with the OES results. By means of FTIR measurements, hydrogen contents of μc-Si：H thin films deposited at different plasma excitation frequency have been evaluated from the integrated intensity of wagging mode near 640 cm^-1. The hydrogen contents vary from 4% to 5%, which are much lower than those of μc-Si：H films deposited with RF-PECVD technique. This implies that μc-Si：H thin films deposited with VHF-PECVD technique usually have good stability under light-soaking.     

Calculation and optimization of thermoelectric cooling modes of thermally loaded elements

The results of calculating the characteristics of the heat-transfer process in thermoelectric cooling and temperature control are presented. The influence of the inhomogeneity of the heat flux and thermal contacts on the temperature increase of the heat-loaded element has been defined. The analysis of the cooling efficiency depending on the operating characteristics and the current strength of the power supply of thermoelectric modules, parameters of the heat-loaded element and the individual components of the system, and the conditions of the heat exchange with the external environment has been performed. It has been shown that, under certain conditions, the use of the thermoelectric modules cannot lead to a cooling of the element, but rather to heating. The possibility of optimizing the cooling to reduce the temperature of the heat-loaded element and power consumption of the thermoelectric module has been considered.     

The size-dependent thermoelectric response of tungsten-constantan thermocouple in the sub-micro scale

We present the behavior of the thermoelectric response in a nanoscale tungsten-constantan (Cu 58%, Ni 42%) thermocouple (TC). The TC is tip-section typed and fabricated by the stepping method. The thermal electromotive force (emf) showed nearly linear behavior versus temperature over the range from 0 to 100^∘C. For the thermocouples with contact radius below 300 nm, the Seebeck coefficient decreased with the size of thermocouples turning smaller. According to the theory based on the free-electron model, the size-dependence thermal electric response may be ascribed to the change of electronic property in nanoscale.     

Investigation of Error Sources in Temperature Measurement Using Thermocouples in Water Impingement Cooling

The reliability of thermocouples with separation measuring junction in temperature measurement in the cooling process of hot steel plates with impingement jet has been investigated using direct and inverse finite element analysis (FEA). It is concluded that while the attachment of thermocouple wires on surface has negligible influence on surface temperature distribution during air cooling, the conduction of wires in a jet impingement water cooling process has significant effect on the measured temperature. The disturbance of the temperature field due to the introduction of a small hole for the installation of internal thermocouple has also been studied and showed similar but less pronounced effects to those of the surface measurement. An increased distortion of the temperature field is evident when the thermocouple is attached on the top surface directly above the bottom surface of hole.     

基于单片机的LD控制系统的设计

为了实现激光器稳定、可靠和准确的功率输出,介绍一种基于单片机实现半导体激光器功率高稳定的控制系统。该系统以MSP430单片机为核心,根据半导体激光器的工作原理,设计了受控恒流源、温度控制系统和光功率反馈系统等部分。此外,系统还具有激光功率的实时控制、显示和设置以及软开关和软保护等功能。功率稳定采用光功率反馈法,温度控制采用高精度PWM驱动的半导体制冷器。光功率稳定度优于0.25%。     

热强度试验中热电偶调理模块的设计与应用

热强度试验现场环境复杂,会对热电偶、热流等微弱电压信号产生较大电磁干扰,影响测量精度甚至控制信号精度。本文描述了热电偶调理模块的设计,对小信号进行隔离放大,有效抑制热强度试验存在的干扰,提高了系统的精度。     

The effect of thermal fluctuations on Schulman area elasticity

We study the elastic properties of a two-dimensional fluctuating surface whose area density is allowed to deviate from its optimal (Schulman) value. The behavior of such a surface is determined by an interplay between the area-dependent elastic energy, the curvature elasticity, and the entropy. We identify three different elastic regimes depending on the ratio between the projected (frame) and the saturated areas. We show that thermal fluctuations modify the elastic energy of stretched surfaces ( ), and dominate the elastic energy of compressed surfaces ( ). When the elastic energy is not much affected by the fluctuations; the frame area at which the surface tension vanishes becomes smaller than and the area elasticity modulus increases.Received: 14 July 2002, Published online: 19 August 2003PACS: 87.16.Dg Membranes, bilayers, and vesicles - 68.03.Cd Surface tension and related phenomena - 05.70.Np Interface and surface thermodynamicsP. Pincus: Also at Physics and Materials Departments and Program in Biomolecular Science and Engineering, UCSB.     

Optical emission spectroscopy study on depositionprocess of microcrystalline silicon

This paper reports that the optical emission spectroscopy (OES) is used to monitor the plasma during the deposition process of hydrogenated microcrystalline silicon films in a very high frequency plasma enhanced chemical vapour deposition system. The OES intensities (SiH\sj{*}, H微晶硅 VHF-PECVD 发射光谱学 薄膜物理学microcrystalline silicon, VHF-PECVD, optical emission spectroscopy2005-11-092005-11-092005-12-12This paper reports that the optical emission spectroscopy （OES） is used to monitor the plasma during the deposition process of hydrogenated microcrystalline silicon films in a very high frequency plasma enhanced chemical vapour deposition system. The OES intensities （Sill^＊, H^＊ and H^＊β） are investigated by varying the deposition parameters. The result shows that the discharge power, silane concentrations and substrate temperature affect the OES intensities. When the discharge power at silane concentration of 4% increases, the OES intensities increase first and then are constant, the intensities increase with the discharge power monotonously at silane concentration of 6%. The SiH^＊ intensity increases with silane concentration, while the intensities of H^＊α and H^＊β increase first and then decrease. When the substrate temperature increases, the SiH^＊ intensity decreases and the intensities of H^＊α and H^＊β are constant. The correlation between the intensity ratio of IH^＊α/ISiH^＊ and the crystalline volume fraction （Xc） of films is confirmed.     

Reprint of : Three-terminal heat engine and refrigerator based on superlattices

We propose a three-terminal heat engine based on semiconductor superlattices for energy harvesting. The periodicity of the superlattice structure creates an energy miniband, giving an energy window for allowed electron transport. We find that this device delivers a large power, nearly twice than the heat engine based on quantum wells, with a small reduction of efficiency. This engine also works as a refrigerator in a different regime of the system's parameters. The thermoelectric performance of the refrigerator is analyzed, including the cooling power and coefficient of performance in the optimized condition. We also calculate phonon heat current through the system and explore the reduction of phonon heat current compared to the bulk material. The direct phonon heat current is negligible at low temperatures, but dominates over the electronic at room temperature and we discuss ways to reduce it.     

Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs

We fabricated a set of symmetric gate-recess devices with gate length of 70 nm.We kept the source-to-drain spacing(L_SD)unchanged,and obtained a group of devices with gate-recess length(L_recess)from 0.4μm to 0.8μm through process improvement.In order to suppress the influence of the kink effect,we have done SiN_X passivation treatment.The maximum saturation current density(ID_max)and maximum transconductance(g_m,max)increase as L_recess decreases to 0.4μm.At this time,the device shows ID_max=749.6 mA/mm at V_GS=0.2 V,V_DS=1.5 V,and g_m,max=1111 mS/mm at V_GS=?0.35 V,V_DS=1.5 V.Meanwhile,as L_recess increases,it causes parasitic capacitance C_gd and g_d to decrease,making f_max drastically increases.When L_recess=0.8μm,the device shows f_T=188 GHz and f_max=1112 GHz.     

自由活塞型斯特林制冷机热力学参数的无量纲分析

自由活塞斯特林制冷机由于其结构紧凑、制冷效率高、可靠性好而不断受到重视。自由活塞斯特林制冷机的热力学参数对整机制冷性能具有决定性影响。基于等温模型,对自由活塞斯特林制冷机进行了无量纲分析,通过引入无量纲制冷量,详细研究了死容积比、扫气容积比、温度比、位移相位角对整机热力性能的影响。其研究结果为不同温区的自由活塞斯特林制冷机热力参数设计提供了参考意见。