Diode-end-pumped passively mode-locked high-power Nd:YVO4 laser with a relaxed saturable Bragg reflector

We demonstrate a high-power passively mode-locked Nd:YVO (4) laser that uses a saturable Bragg reflector (SBR) with strain relaxation. 23.5 W of average power with ~21.5-ps cw mode-locked pulse trains was generated at a 50-W pump power. Experimental results show that appropriate strain relaxation in the SBR makes the mode-locking operation less sensitive to temperature variation.     

High-power diode-pumped Q-switched and mode-locked Nd:YVO(4) laser with a Cr(4+):YAG saturable absorber

We demonstrate a high-power passively Q -switched and mode-locked Nd:YVO(4) laser with a Cr(4+):YAG saturable absorber. 2.7 W of average power with an 18-kHz Q -switched repetition rate was generated at a 12.5-W pump power. The peak power of a single pulse near the maximum of the Q -switched envelope was greater than 100 kW.     

Optimization of diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4 laser with a GaAs saturable absorber

By considering the single-photon absorption (SPA) and two-photon absorption (TPA) processes in the GaAs saturable absorber, the coupled rate equations for a diode-pumped passively Q-switched and mode-locked (QML) laser with GaAs coupler under Gaussian approximation are given. The key parameters of an optimally coupled passively QML laser can be obtained by numerically solving these equations. These key parameters include the parameters of the gain medium, the saturable absorber and the resonator, which can maximize the pulse energy of singly Q-switched envelope. Sample calculations for a diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO₄ laser with a GaAs saturable absorber are presented to demonstrate the optimal method applicable.     

Diode-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber

The intracavity photon density is assumed to be of Gaussian spatial distributions and its longitudinal variation is also considered in the rate equations for a laser diode(LD)end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber.These space-dependent rate equations are solved numerically.The dependences of pulse width,pulse repetition rate,single-pulse energy,and peak power on incident pump power are obtained.In the experiment,the LD end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber is realized and the experimental results are consistent with the numerical solutions.     

High-power diode-pumped Q-switched intracavity frequency-doubled Nd:YVO4 laser with a sandwich-type resonator

A compact and efficient diode-pumped acousto-optically Q -switched intracavity frequency-doubled Nd:Y VO(4)/KTP green laser is demonstrated. With 0.5-at. % Nd:Y VO(4), greater than 4.6 W of 532-nm average power at a repetition rate of 50 kHz was generated with 17-W pump power, corresponding to a conversion efficiency of 27%. At 10-30 kHz the pulse width is shorter than 10 ns, and the peak power is higher than 13 kW.     

High-power diode-pumped nonlinear mirror mode-locked Nd:YVO4 laser with periodically-poled KTP

We demonstrate a high-power nonlinear mirror (NLM) mode-locked Nd:YVO₄ laser with a periodically poled KTP (PPKTP). With a 10-mm-long PPKTP crystal, 5.6 W of average power with 20-ps of pulse duration was generated at 18-W of pump power. Compared with conventional type-II KTP crystal with the same length, the stability against the Q-switched mode-locking (QML) is significantly increased with PPKTP in NLM laser; and the pulse duration was also considerably reduced. Received: 21 July 2000 / Revised version: 30 August 2000 / Published online: 10 January 2001     

InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd:YVO4 laser at 1342 nm

We report that InAs/GaAs quantum dots were developed to be saturable absorbers as well as output couplers in diode-pumped passively mode-locked Nd:YVO4 lasers at 1342 nm. With an incident pump power of 12.6 W, an average output power of 0.85 W with a mode-locked pulse width of 26 ps at a repetition rate of 152 MHz was obtained.     

A diode-pumped high power Q-switched and self-mode-locked Nd:YVO4 laser with a LiF:F2- saturable absorber

Simultaneous mode-locking and Q-switching has been accomplished in a diode-pumped Nd:YVO₄/LiF:F₂ ^- laser. At an absorbed pump power of 23.6 W, the average output power was 6.0 W and the repetition rate of the Q-switched pulse was 260 kHz. A depth of mode-locking of 100% was obtained and there was no satellite pulse between mode-locked pulse trains. The mode-locked pulse inside the Q-switched pulse had a repetition rate of approximately 148 MHz and its average duration was estimated to be around 75 ps. Received: 6 February 2001 / Revised version: 23 April 2001 / Published online: 18 July 2001     

Efficient subnanosecond diode-pumped passively Q-switched Nd:YVO4 self-stimulated Raman laser

Generation of efficient subnanosecond self-stimulated Raman pulses by a diode-pumped passively Q-switched Nd:YVO4/Cr4+:YAG laser is demonstrated. Experimental results reveal that self-frequency Raman conversion can be achieved with a c-cut Nd:YVO4 crystal in a nearly hemispherical cavity. At 2.0 W of incident pump power, the self-stimulated Raman laser produces stable 710-ps pulses at a Stokes wavelength of 1178.6 nm with 7.2 microJ of pulse energy at a 17-kHz repetition rate.     

Q-switched and mode-locked diode-pumped Nd:YVO4 laser with an intracavity composite semiconductor saturable absorber

We have demonstrated a passively Q-switched and mode-locked Nd:YVO₄ laser with an intracavity composite semiconductor saturable absorber (ICSSA). Stable Q-switched and mode-locked pulses with Q-switched envelope pulse duration of 180 ns and pulse repetition rate of 72 KHz have been obtained. The maximum average output power was 1.45 W at 8 W incident pump power. The repetition rate of the mode-locked pulses inside the Q-switched envelope was 154 MHz. Experimental results revealed that this ICSSA was suitable for Q-switched and mode-locked solid-state lasers.     

Q-switched and mode-locked diode-pumped Nd:YAG laser with an LT-GaAs

Simultaneous Q-switching and mode-locking (QML) is accomplished in a diode-pumped Nd:YAG laser using low-temperature GaAs (LT-GaAs) as the saturable absorber, which also acts as an output coupler at the same time. The repetition rate of the Q-switched envelope increased from 25 to 40 kHz as the pump power increased from 2.2 to 6.9 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 714 MHz. A maximum average output power of 770 mW was obtained.     

Compact efficient diode-pumped Nd:YVO4 Q-switched blue laser with intracavity frequency tripling

We demonstrate a compact efficient diode-pumped acousto-optically Q-switched intracavity-frequency-tripled Nd:YVO₄ blue laser. The optimum polarization state is experimentally investigated to optimize the output performance. Greater than 280 mW of 447-nm average power at a repetition rate of 25 kHz was generated with a 15-W diode pump power. At 25 kHz, the pulse width is shorter than 15 ns and the peak power is higher than 800 W.     

Diode-pumped passively Q-switched mode-locked Nd:LuVO4 laser with a semiconductor saturable absorber mirror

We present a compact passively Q-switched mode-locked Nd:LuVO₄ laser run in a Z-type folded cavity with semiconductor saturable absorber mirror (SESAM). The repetition rates of the passively Q-switched pulse envelope ranges from 22.99 to 141.18 kHz as the pump power increased from 2.372 to 8.960 W. The repetition rates of mode-locked laser pulses in the Q-switched pulse envelope has 111 MHz determined by the cavity length and the mode-locked pulse duration is evaluated to be 257 ps. An average output power of 823.5 mW is achieved at the pump power of 8.96 W, corresponding to an optical conversion efficiency of 9.2%.     

LD-pumped passively Q-switched Nd:YVO4/YVO4 laser with an Nd3+:Cr4+:YAG saturable absorber

By using a piece of codoped Nd³⁺:Cr⁴⁺:YAG crystal as a saturable absorber, a laser-diode pumped passively Q-switched Nd:YVO₄/YVO₄ laser has been realized. The maximum laser output power of 2.452 W has been obtained at the incident pump power of 8.9 W for an 8.8% transmission of the output coupler at 1064 nm, corresponding to a slope efficiency of 30%. The other output laser characteristics of the laser have also been investigated. The laser with a Nd³⁺:Cr⁴⁺:YAG saturable absorber has a lower threshold pump power and a higher slope efficiency compared to that with a similar small-signal transmission of a Cr⁴⁺:YAG saturable absorber.     

A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption

We have demonstrated a passively Q-switched operation of Nd:GdVO₄ laser in which a GaAs crystal is used as the saturable absorber for the first time as far as we know. A maximum average output power of 1.64 W was obtained at an incident pump power of 12 W, the corresponding optical conversion efficiency and peak power were 13.7% and 116.8 W, respectively. The maximum peak energy obtained in the experiment by 50% transmission couple was 19 μJ.     

Co2+:LMA crystal as saturable absorber for a diode-pumped passively Q-switched Nd:YVO4 laser at 1342 nm

We have demonstrated an efficient diode-pumped passively Q-switched Nd:YVO₄ laser at 1342 nm by using an uncoated Co²⁺:LaMgAl₁₁O₁₉ (Co²⁺:LMA) crystal as the saturable absorber. With the absorbed pump power of 11.7 W, the pulse width could be as low as 42 ns, with a corresponding average output power of 580 mW. At around 40 kHz repetition rate, the energy of a single Q-switched pulse was estimated to be about 14.5 μJ and the peak power was 346 W. The passive Q switching operation for the Co²⁺:LMA in different polarization states was also investigated. PACS 42.55.-f; 42.55.Xi; 42.60.Gd; 42.70.Mp     

A compact diode-pumped Q-switched and mode-locked Nd:GdVO4 laser based on SESAM

We report a compact passively Q-switched and Mode-locked Nd:GdVO₄ laser based on a semiconductor saturable absorber mirrors (SESAM). At a pump power of 12 W, the average output power was obtained to be 1.8 W with the repetition rate of the Q-witched envelope 80 kHz and 500 ns pulse width. The mode-locked pulses interval within the Q-switched envelope was about 1ns, corresponding to the high repetition of 1 GHz.     

Passively Q-switched Nd:YVO4/PPLN green laser with a few-layered MoS2 saturable absorber

Optical Review - We experimentally realized and demonstrated a solid-state, passively Q-switched Nd:YVO4/PPLN green laser with a saturable absorber (SA) based on few-layered MoS2. The MoS2 SA was...     

Fluorescence lifetime imaging with a low-repetition-rate passively mode-locked diode-pumped Nd:YVO4 oscillator

We report a wide-field fluorescence lifetime imaging microscope based on a low-repetition-rate (3.7-MHz) passively mode-locked diode-pumped laser source. This inexpensive and compact laser source operating in the visible and UV range can excite a wide range of fluorophores of biological interest. We demonstrate that the power of this laser source is highly sufficient for studying biological systems with low quantum yields (autofluorescence of tissues and stained living cells). The maximum measurable lifetime is also strongly increased with this laser source, as fluorescence intensity measurement can occur 250 ns after the excitation pulse.     

5.3-W Nd:YVO4 passively mode-locked laser by a novel semiconductor saturable absorber mirror

We report a diode end-pumped continuous wave (CW) passively mode-locked Nd:YVO4 laser with a homemade semiconductor saturable absorber mirror (SESAM). The maximum average output power is 5.3 W at the incident pump power of 17 W, which corresponds to an optical-optical conversion efficiency of 31.2% and slope efficiency of 34.7%. The corresponding optical spectrum has a 0.2-nm full width at half maximum (FWHM), and the pulse repetition rate is 83 MHz.