Analysis of current ‐ voltage ‐ temperature characteristics of In and Cu contacts on n‐type MoSe2 single crystals

The current voltage characteristics of In / Cu with n‐type MoSe₂ Schottky diodes were measured over a wide temperature range 50 < T < 300 K. The interface formed by In and MoSe₂ shows ohmic behavior after annealing the contact at 100 °C for 12 h. The ohmic nature was retained at all the measured temperatures. The Cu ‐ nMoSe2 interface formed a Schottky junction diode with a good rectification ratio. The Schottky barrier height and the ideality factor thereby obtained were 0.72 eV and 1.45, respectively, at room temperature. Below room temperature, the barrier height and the ideality factor vary with decreasing temperature. The changes are significant at low temperatures. Barrier height inhomogeneities at the interface cause deviation in the zero‐bias barrier height and the ideality factor at low temperatures, and produce extra current such that I‐V characteristics remain consistent with the thermionic emission mechanism. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Characteristics of Al / p‐AgGaTe2 polycrystalline thin film Schottky barrier diode

An Al/p‐AgGaTe₂ polycrystalline thin film schottky barrier diode have been prepared by flash‐evaporation of p‐AgGaTe₂ onto a pre‐deposited film of aluminium. The current‐voltage, capacitance‐voltage and photoresponse of the diode have been investigated. The important physical parameter such as barrier height of the fabricated diode was derived from these measurements. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Voltage‐current characteristics of Bi‐2223 superconducting tape near Tc under γ irradiation

Voltage‐current characteristics at four different applied magnetic fields (7, 20, 30, and 40 mT) of Bi₂Sr₂Ca₂Cu₃O_x superconducting tape were measured in the temperature range from 100 to 115 K. They were also measured at zero magnetic field before and after γ irradiations up to 10 MRad at different temperatures just below the critical temperature. The data were fitted to a power law expression V = I ^β(T) in which the exponential parameter β under 20 mT field and after irradiation is found to fluctuate around three and then drops to unity near the critical temperature which may be interpreted as a sign of Kosterlitz‐Thouless transition. The electrical properties of the tape were found to be very sensitive to γ irradiation where most of the changes take place in low γ doses. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Characteristics of Al/p‐Cu0.5Ag0.5InSe2 Polycrystalline Thin Film Schottky Barrier Diodes

Al/p‐Cu_0.5Ag_0.5InSe₂ polycrystalline thin film Schottky barrier diodes have been prepared. The current‐voltage, capacitance‐voltage and photores ponse have been investigated. Various important physical parameters of the sediodes were derived from these measurements.     

Structural and magnetic studies of Mn‐doped ZnO

The bulk samples of Mn‐doped ZnO were synthesized with the nominal compositions Zn_1‐xMn_xO (x = 0.02, 0.05, 0.10, 0.15) by the solid‐state reaction and sol‐gel methods. In both the methods the samples were finally sintered at ∼700 °C in air. The X‐ray diffraction (XRD) studies of the samples synthesized by the solid‐state reaction method exhibit the presence of wurtzite (hexagonal) crystal structure similar to the parent compound (ZnO) in all the samples, suggesting that doped Mn ions sit at the regular Zn sites. However, same studies spread over the samples with Mn content ≥5% and synthesized by the sol‐gel method reveal the occurrence of some secondary phase in addition to the majority wurtzite phase. The magnetic measurements by vibrating sample magnetometer (VSM) clearly indicate ferromagnetic interaction at room temperature in all the samples. The Curie temperatures (T_c) and magnetization vary with concentration of Mn ions in the samples. However, the samples synthesized by sol‐gel method were found to have lower Tc values and also lower magnetization as compared to the corresponding samples synthesized by solid‐state reaction method. It could possibly be due to the presence of antiferromagnetic islands and smaller crystallite sizes in the samples prepared by sol‐gel method. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Isochronal Studies of α‐Si:H Crystallization and the Performance of it's Schottky Barriers

Hydrogenated amorphous silicon films (α‐Si:H) were crystallized employing a metal induced crystalline (MIC) technique. Structural changes during annealing these films at 300 °C for different periods (0‐300 minutes) were obtained by XRD. Al was used as a metal induced crystalline for α‐Si:H produced by ultra high vacuum (UHV) plasma enhanced chemical vapor deposition (PECVD). XRD shows that crystallization of the interacted α‐Si:H film underneath Al initiates at 300 °C for 15 minutes. A complete crystallization was obtained after annealing for 60 minutes. A gold dot was evaporated onto α‐Si:H films, which annealed for different periods to form Schottky barriers. Electrical properties of Au/α‐Si:H were calculated such as the ideality factor, n, barrier height, Φ_B, donor concentration, N_D, and the diffusion voltage, V_d, as a function of the annealing time of α‐Si:H films. All these parameters were carried out through the current voltage characteristics (J‐V) and the capacitance voltage measurements (C‐V). The results were presented a discussed on the basis of XRD performance and the thermionic emission theory.     

Some features of thermo‐activated structural transformation of biogenic and synthetic Mg‐containing apatite with β‐tricalcium‐magnesium phosphate formation

Temperature transformation of biogenic and synthetic Mg‐containing apatite with β‐tricalcium‐magnesium phosphate (β‐TCMP) formation was investigated by X‐ray diffraction. Samples were annealed in air at the temperature range from 600 to 1200 °C at intervals 100 °C and cooled down to room temperature. The appearance of β‐TCMP was ascertained in samples annealed at 800 °C. As revealed, the relative amount of β‐TCMP increases and Mg concentration in this phase decreases as the annealing temperature is raised. While this, the replacement degree of Ca by Mg in the β‐TCMP lattice is the annealing temperature function and does not depend either on sample origin (biogenic/synthetic) or on initial Mg concentration. The results of present work together with other investigation data testify to a high thermally activated mobility of Mg both in structure of Mg‐containing apatites and in the structure of β‐TCMP formed after thermal decomposition. Obtained data can be used for new biomaterials design with varied prolongation of Mg released into the living biological tissue. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Poole‐Frenkel electrical conduction in europium oxide films deposited on Si(100)

Thin Eu₂O₃ films were prepared on Si (P) substrates to form MOS devices. The oxide crystal structure was determined by X‐ray diffraction (XRD). The electrical transport properties of the devices with amorphous and crystalline Eu oxide were investigated. The current‐voltage and current‐temperature characteristics suggest a Poole‐Frenkel (PF) type mechanism of carrier transport through the device when the applied field is more than 105 V/cm. A deviation from PF leakage current course was found and attributed to the current carrier trapping. We have also observed that, the dielectric spectra of MOS structure are different when the insulator is an amorphous or crystalline thin film. From which we calculate the relaxation time (τ) of the interface (insulator/semiconductor) dipoles. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Low‐temperature preparation of bismuth ferrite microcrystals by a sol‐gel‐hydrothermal method

Well‐crystallized pure perovskite bismuth ferrite (BiFeO₃) powders with various morphologies have been synthesized by a novel sol‐gel‐hydrothermal route for the first time, which combined the conventional sol‐gel process and the hydrothermal method. The as‐prepared samples were characterized by X‐ray diffraction (XRD), scanning electron microscopy (SEM), differential thermal analysis (DTA) and ferroelectric test system. The results revealed that the compositions, morphological and dimensional changes in bismuth ferrite samples synthesized by sol–gel–hydrothermal method strongly depend on the concentrations of mineralizer. Ferroelectric hysteresis loops are displayed in the BiFeO₃ samples. The bismuth ferrites were hydrothermally synthesized at as low a temperature as 180 °C, which is comparatively lower than that synthesized by the normal sol–gel route. The formation mechanism of the bismuth ferrite crystalline was also discussed. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural,Morphological and Electrical Studies on Barium Strontium Titanate Thin Films Prepared by Sol‐Gel Technique

The crystal structure, surface morphology, compositional homogeneity and electrical properties of barium strontium titanate (BST) thin films are investigated. The films were deposited on bare silicon and platinum coated silicon substrates by spin coating process. The precursor solution with Ba/Sr ratio 70/30 was prepared by sol‐gel synthesis using metal alkoxides. The crystalline nature and morphology of the films are found to be strongly influenced by the heating cycle adopted to form the Ba_0.7Sr_0.3TiO₃ layer. The elemental composition analysis on the surface and in‐depth confirms the stoichiometry of the films. The dielectric constant at 100 kHz and dissipation factor at room temperature is found to be 120 and 0.0236 for the films with 400nm thickness annealed at 700°C for 2 hrs. The leakage current density of the film is found to be 4x10^‐8 A/cm² from I‐V measurements.     

Crystallisation and performance characteristics of high‐temperature annealed electroless Ni‐W‐P coatings

Electroless deposition of Ni–P based alloys is a well‐known commercial process that has numerous applications because of their excellent anticorrosive and wear properties. However, for some special occasions, like the components for gas making furnaces in chemical fertiliser industry, the coatings must be reinforced to withstand short‐term high temperatures between 600 °C and 700 °C as well as light erosive wear. Therefore, co‐deposition of high melting point metallic element, W, has been considered as a preferred choice. In the present study, two Ni–W–P alloy coatings were deposited on mild steel panels from different alkaline baths. The microstructures of the annealed coatings were characterised by quantitative XRD, XPS and SEM/EDS analysis techniques and their microhardness, friction and wear behaviour, corrosion mechanism as well as microstrain and residual stress are discussed in comparison with the as‐plated state. The results indicate that the hardness mainly depends on the volume fraction and crystallite size of Ni₃P phase; the uniform corrosion in sulfuric acid solution is closely related to the ratio of I_Ni/I_Ni3P as well as grain size. The wear mechanism of the high‐temperature annealed coating is dominated by abrasive wear, but the wear in the early stages started from mild adhesive wear caused by adhesion between the friction couples. Electroless deposited Ni‐W‐P alloys with high phosphorus present relatively good properties, including hardness, wear and corrosion resistance when 700 °C is applied for annealing process.     

Te溶剂Bridgman法CdMnTe晶体核辐射探测器的制备和表征

碲锰镉(CdMnTe)作为性能优异的室温核辐射探测器材料,可用于环境监测和工业无损检测领域。本文中采用Te溶剂Bridgman法生长In掺杂Cd_0.9Mn_0.1Te晶体,制备成10 mm×10 mm×2 mm大小的室温单平面探测器,研究了该探测器对²⁴¹Am@59.5 keV γ射线源的能谱响应。通过表征红外透过率、电阻率以及探测器能谱响应等参数,综合评定了探测器用CdMnTe晶体的质量、电学和探测器性能。结果表明,晶片的红外透过率均在55%以上,最好可达到60%。采用湿法钝化,100 V偏压下的漏电流由钝化前的9.48 nA降为钝化后的7.90 nA,钝化后的电阻率为2.832×10¹⁰ Ω·cm。在-400 V反向偏压下,CdMnTe探测器对²⁴¹Am@59.5 keV γ射线源的能量分辨率在钝化前后分别为13.53%和12.51%,钝化后的电子迁移率寿命积为1.049×10^-3 cm²/V。研究了探测器的能量分辨率随电压的变化特性,当偏压≤400 V时,探测器的能量分辨率主要由载流子的收集效率决定,而当偏压>400 V时,能量分辨率由漏电流决定。本文研究结果表明,Te溶剂Bridgman法生长的CdMnTe晶体质量较好,电阻率和电子迁移率寿命积满足探测器制备需求。     

Crystal structure,spectroscopic studies and non‐linear optical properties of 2‐amino‐3‐nitropyridinium trichloroacetate

A new quadratic nonlinear optical crystal, 2‐amino‐3‐nitropyridinium trichloroacetate (2A3NPTCA), was synthesized and the single crystals were grown by slow evaporation method at room temperature. Single crystal X‐ray diffraction and powder X‐ray diffraction experiments were carried out in order to confirm the structure and crystalline nature of 2A3NPTCA crystal. The chemical bonding and various functional groups present in the 2A3NPTCA were identified from FT‐IR spectrum. The UV–visible–NIR transmission spectrum shows that it is suitable for frequency‐converting in the wavelength region of 431–1200 nm. Thermogravimetric (TG) and differential thermal analysis (DTA) were carried out to characterize the thermal behaviors of the grown crystals. Kurtz and Perry powder method for second harmonic generation (SHG) measurements demonstrate that 2A3NPTCA is a phase matching material and its nonlinear optical efficiency is two times that of KDP. All the above results suggest that 2A3NPTCA is a potential candidate of NLO material.     

Co nanoclusters as origin of ferromagnetism in sol‐gel synthesized Zn1‐xCoxO (x = 0.05, 0.10 and 0.15) samples

We report on the structural and magnetic properties of the polycrystalline samples of Zn_1‐xCo_xO (x = 0.05, 0.10 and 0.15) synthesized via sol‐gel route. The air sintered samples of all compositions exhibit paramagnetic behaviour at room temperature, on the other hand the same samples on annealing in Ar/H₂ atmosphere show room temperature ferromagnetism (RTFM) with enhanced magnetization. The value of magnetization increases with the Co concentration (x) in both the air sintered and Ar/H₂ annealed samples. The observed ferromagnetism in the Ar/H₂ annealed Zn_1‐xCo_xO (x = 0.05, 0.10 and 0.15) samples is attributed to the presence of Co nanoclusters as detected by XRD and FESEM‐EDAX. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structure and electrical conduction of Sb2O3 thin films

Antimony trioxide (Sb₂O₃) thin films have been deposited onto glass substrates using thermal evaporation technique at room temperature. The structural feature and surface morphology were characterized by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Sandwich‐type structures were deposited with films thickness d = 0.55 μm using evaporated electrodes of silver. Current‐voltage (J‐U) characteristics have been measured at various fixed temperatures in the range 293‐473 K. In all cases, at low electric field (E <10⁴ V/cm), ohmic behavior is observed. However, at high electric field (E >10⁴ V/cm), non‐ohmic behavior is observed. An analysis of the experimental data indicates that in the range of high‐applied electric field, the dominant conduction mechanism is space charge limited currents (SCLC). Using the relevant SCLC theory, the carrier concentration, total trap concentration and the ratio of free charge to trapped charge have been calculated and correlated with changes in the structures of antimony trioxide thin films. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoelectrical properties of crystalline titanium dioxide thin films after thermo‐annealing

This paper reports the photoelectrical properties of sol gel derived titanium dioxide (TiO₂) thin films annealed at different temperatures (425‐900°C). The structure of the as‐grown film was found to be amorphous and it transforms to crystalline upon annealing. The trap levels are studied by thermally stimulated current (TSC) measurements. A single trap level with activation energy of 1.5 eV was identified. The steady state and transient photocurrent was measured and the results are discussed on the basis of structural transformation. The photocurrent was found to be maximum for the films annealed at 425°C and further it decreases with annealing at higher temperatures. The photoconduction parameters such as carrier lifetime, lifetime decay constant and photosensitivity were calculated and the results are discussed as a function of annealing temperature. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and characterization of 1‐phenyl‐3‐(propan‐2‐yl)‐1H‐pyrazol‐5‐ol single crystals

The synthesis of pyrazoles and its derivatives remains of great interest due to their wide applications in pharmaceutical and agrochemical industry. The 1‐phenyl‐3‐(propan‐2‐yl)‐1H‐pyrazol‐5‐ol was synthesized. The 1‐phenyl‐3‐(propan‐2‐yl)‐1H‐pyrazol‐5‐ol single crystals were grown by slow solvent evaporation technique using mixture of chloroform and methanol as a solvent. Yellowish and transparent crystals having maximum dimensions of 0.005 m × 0.004 m × 0.002 m were grown. The crystals were characterized by powder XRD, FT–IR, TG–DTA–DSC and dielectric study. The crystals remained stable up to 160 °C and then start decomposing. The DSC suggested both endothermic and exothermic reactions. One broad exothermic peak was observed at 558.1 °C due to complete decomposition of the sample into the gaseous phase and reaction within the products. Thermodynamic and Kinetic parameters of decomposition were calculated by Coats–Redfern formula. The dielectric study was carried out in the frequency range from 50 Hz to 5 MHz at room temperature. The dielectric constant decreased as the frequency of the applied field increased. The variations of dielectric loss, a.c. conductivity and a.c. resistivity also studied with the frequency of the applied field. Jonscher's power law was verified for a.c. conductivity.     

Optical,mechanical and thermal properties of p‐bromoacetanilide

Solubility and metastable zonewidth were estimated for p‐Bromoacetanilide. Employing slow evaporation method crystals of size 22x17x6 mm³ and 38x25x10 mm³ were grown at a constant temperature of 40°C and room temperature respectively from methanol solution. The cell dimensions were obtained by single crystal X‐ray diffraction study. The placement of protons was identified from NMR spectral analysis. UV‐Visible and fluorescence spectral analyses were carried out for the grown crystals. Vickers microhardness test was performed on the prominent (110) of the as grown crystal. Thermogravimetric and differential scanning calorimetric studies were carried out to determine the thermal properties of the grown crystal. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Paramagnetic behavior of Zn1−xMnxO at room temperature

Mn‐doped ZnO were synthesized by solid state reaction and sol‐gel method respectively. It was found that samples synthesized by solid state reaction containing Mn₂O₃ and MnO₂ are a mixture of ferromagnetic and paramagnetic phases. Contrary, samples without second phases were found to be paramagnetic at room temperature. According to previous report, interface effects between Zn‐rich Mn₂O₃ and MnO₂ interfaces may be the origin of the ferromagnetic behavior observed in our samples prepared by solid reaction, so the alloy of Zn_1−xMn_xO may be paramagnetic at room temperature. Prepared by sol‐gel technique, the samples without second phases in the XRD patterns are also room‐temperature paramagnetic. Therefore we believe that the magnetism of Zn_1−xMn_xO is paramagnetic at room temperature. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth,structure and thermal properties of CuAlxGa1‐xSe2 alloys

Ingots of the CuAl_xGa_1‐xSe₂ (0 ≤ x ≤ 1) alloys system were prepared by direct fusion of the stoichiometric mixture of the elements. The analysis of X‐ray Powder Diffraction data showed the presence of one single phase with chalcopyrite tetragonal structure at room temperature for all the studied compositions. The lattice parameters, a and c, and the bond lengths were calculated. The phase transition temperatures were obtained by the onset method from Differential Thermal Analysis measurements performed on samples sealed in evacuated quartz ampoules. Fusion or transition enthalpies were determined from the area of the corresponding DTA peak. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)