共查询到20条相似文献,搜索用时 15 毫秒
1.
2.
Single crystals of CuSi2P3 as long as 1cm has been grown by using tin solution growth. X-ray powder photography technique showed that only CuSi2P3 can grow as a pure material without any exchanges of Si with Sn. The structure is in the form of Fcc with a lattice parameters of a=0.5248nm. Electron probemicro anaiysis (EPMA) has supported the X-ray data in regarding the single phase of this compound grown by solution growth. 相似文献
3.
碳化硅(SiC)作为第三代半导体材料,不仅禁带宽度较大,还兼具热导率高、饱和电子漂移速率高、抗辐射性能强、热稳定性和化学稳定性好等优良特性,在高温、高频、高功率电力电子器件和射频器件中有很好的应用潜力。高质量、大尺寸、低成本SiC单晶衬底的制备是实现SiC器件大规模应用的前提。受技术与工艺水平限制,目前SiC单晶衬底供应仍面临缺陷密度高、成品率低和成本高等问题。高温溶液生长(high temperature solution growth, HTSG)法生长SiC单晶具有晶体结晶质量高、易扩径、易实现p型掺杂等独特的优势,有望成为大规模量产SiC单晶的主要方法之一,目前该方法的主流技术模式是顶部籽晶溶液生长(top seeded solution growth, TSSG)法。本文首先回顾总结了TSSG法生长SiC单晶的发展历程,接着介绍和分析了该方法的基本原理和生长过程,然后从晶体生长热力学和动力学两方面总结了该方法的研究进展,并归纳了该方法的优势,最后分析了TSSG法生长SiC单晶技术在未来的研究重点和发展方向。 相似文献
4.
5.
6.
7.
底部籽晶法:一种高温溶液晶体生长新方法 总被引:3,自引:2,他引:1
为了从高温溶液中生长非一致熔融的单晶材料,发展了一种叫做"底部籽晶法"的新生长方法.通过设计大的垂直温度梯度,解决了助熔剂或高温溶液对籽晶的侵蚀问题;采用后加热系统,有效地控制了晶体的开裂.采用底部籽晶法,成功地生长了新型弛豫铁电晶体(1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3(0≤x≥0.2)、近化学计量比LiNbO3晶体以及非线性光学晶体铌酸钾锂K3Li2-xNb5+xO15+2x(0相似文献
8.
使用优级纯的NH4H2PO4(含量>99.5;)和重水(纯度>99.5;)为原料,在重水中经过三次氘化重结晶,获得含氘量>95;的结晶原料.上述DADP晶体作为原料配成1000ml的饱和溶液,用降温转动法生长出22mm×23mm×78mm尺寸的透明大晶体,并且测定其晶体结构、透过光谱和激光损伤阈值.从数据分析来看在最重要的光谱应用波段(1.06μm附近)DADP晶体综合性能是很优越的,这使得DADP有利于作为电光晶体材料和制作高频高灵敏度的电光器件. 相似文献
9.
采用自发成核方法,以NaCl-Na2CO3为助熔剂,生长了毫米级的NaCo2O4晶体。通过X射线衍射对晶体作了表征。利用扫描电子显微镜和原子力显微镜研究了晶体的形貌和生长机理。结果表明:所得晶体是NaCo2O4,属于六方晶系,晶胞参数:a=b=0.2842 nm,c=1.0894 nm,V=0.0761997 nm3。NaCo2O4晶体是沿c轴层状生长的,同时从阴离子配位多面体的角度分析了晶体的形貌。 相似文献
10.
本文观测了TSB在苯甲醚等有机溶剂中的结晶习性,测定了相应的溶解度曲线和亚稳区.采用溶液降温法在50~30 ℃的温度范围内进行晶体生长,获得透明度好的厘米级TSB晶体.通过对所得晶体进行X射线粉末衍射、紫外-近红外透过光谱、吸收光谱和紫外荧光光谱等测试,表明:本实验使用的不同生长溶剂对TSB晶体结构不会产生影响,所得晶体在410~1000 nm波长范围内透过率不低于80;,而在200~360 nm范围内有吸收,在波长为272.8 nm的激发光作用下,得到较强的荧光峰,峰位为386 nm. 相似文献
11.
C. Razzetti M. Ardoino L. Zanotti M. Zha C. Paorici 《Crystal Research and Technology》2002,37(5):456-465
Single crystals of L‐alanine have been grown from buffered aqueous solutions and characterised as to their optical quality via wavefront distortion analysis, electrooptical response and harmonic generation efficiency. Refraction indices as well as phase matching loci were found in satisfactory agreement with previously published data for crystals grown in non buffered solution. Estimates for the electro‐optical response are reported for the first time. The experimentally observed crystal habit is discussed in terms of morphological importance (M.I.), which was found to be in disagreement with the predictions of crystallographic criteria based on the interplanar distance dhkl, on the periodic bond chains (PBC) and the attachment energy Eatt. This disagreement is tentatively attributed to the presence of impurities and non‐appropriate supersaturation conditions. 相似文献
12.
13.
14.
Zh. X Cheng Sh.J. Zhang J.R. Han H.Ch. Chen X.S. Liu Y. Y Yang J. Yang 《Crystal Research and Technology》2001,36(2):135-140
NaY0.99Eu0.01(WO4)2 crystals were grown along <101> and <001> directions. Single crystals with high quality can be obtained when they were grown along <101> direction from a melt with a small deviation from stoichiometric composition. Eu ions exist in two valences in the as‐grown crystals, in one valence after annealing only. The fluorescence spectrum shows the Stark splitting of energy levels of Eu ions is in accordance with the site symmetry of S4. 相似文献
15.
The iso‐diameter growth of β ‐BaB2O4 (BBO) crystals by the flux pulling method have been studied based on the phase equilibrium diagram in the BaB2O4‐Na2O pseudo‐binary system and from the interface stability. The mathematical expressions for the cooling rate in the growth of the crystals with constant diameter under stable growth conditions are derived, the experimental phenomena such as diameter contraction and difficulty to grow a lengthy crystal by the flux pulling method are explained, the prerequisite for iso‐diameter BBO crystal growth from the flux is suggested; a new continuous charging flux pulling method is introduced to grow large‐sized high quality crystals with a relative high growth rate. 相似文献
16.
报道了一种新型的CdGeAs2晶体择优腐蚀剂,配方为:H2O2(30;): NH4OH(含NH325;-28;): NH4Cl(5mol/L): H2O=1 mL: 1.5 mL: 1.5 mL: 2 mL.将经机械研磨、物理抛光和溴甲醇化学抛光处理后的表面平整无划痕的CdGeAs2晶片,在40 ℃下超声振荡腐蚀数分钟,采用金相显微镜和SEM进行蚀坑观察.结果表明,新型腐蚀剂对CdGeAs2晶体(204)和(112)晶面择优腐蚀效果显著,蚀坑取向一致,具有很强的立体感;(204)晶面蚀坑呈三角锥形,(112)晶面蚀坑呈五边形,从晶体结构上对蚀坑形成机理进行了分析讨论. 相似文献
17.
18.
19.
Shinichi Yano Yasuomi Watanabe Kanetsugu Terashima Koichiro Aoki 《Molecular Crystals and Liquid Crystals》2013,570(1):75-82
Anisotropic dielectric relaxations at the nematic state under magnetic field and viscosities at the isotropic state were measured in MBBA-CPB systems with various mole% of CPB. The intermolecular interaction in the systems with different mole% of CPB was estimated by the MaierSaupe theory from the dielectric relaxations and the viscosities. A long range-intermolecular interaction increased anomalously near the two CPB concentrations exhibiting the eutectic points (15 and 75 mole% of CPB). This was explained by some component fluctuation originating in the inversion of solvent-solute relationships at the eutectic mixing ratio. 相似文献
20.
“如何突破大尺寸晶体材料的制备理论和技术”是中国科协发布的2021年度的十大前沿科学问题之一,揭示晶体生长机制和突破生长关键技术是大尺寸功能晶体发展的两个趋势。在原子分子尺度上,晶体生长可以是有势垒的热激活过程,也可以是无势垒的超快结晶过程,这与具体的体系以及晶面有关。从界面属性角度来看,光滑界面是以台阶拓展的方式生长;粗糙界面没有明显的固-液分层,通过局部原子固化进行生长。本文从晶体生长理论模型、生长技术及其应用实例,以及分子动力学方法在晶体生长中的应用等方面探讨了近些年大尺寸晶体快速生长理论和技术的研究进展。目前有多种方法制备大尺寸晶体,但普遍存在制备的晶体质量差和性能不稳定等问题。需要突破对晶体生长微观机制上的认识,建立机制与温度、流速等外界因素的内在联系。而利用机器学习力场以及分子动力学模拟方法,建立固-液界面,模拟晶体生长,将是探究晶体生长微观机制的一种有效方式。 相似文献