TEM-Untersuchungen von Gitterfehlern in ZnSiP2-Einkristallen

Results are dealt with concerning TEM investigations of lattice defects in ZnSiP₂ single crystals. After the crystal growth dislocations or stacking faults were found in a few cases only. More frequently twins were present in the microstructure. The crystallographic elements of twinning are {112} 〈111〉. After plastic deformation by bending at 900 °C local dislocation arrangements with high defect density (N_v ≈ 10⁶…︁ 10⁷ cm⁻²) were observed. By means of the diffraction contrast one Burgers vector b = 1/2 〈111〉 could be identified. In some cases the crystals also contained wide deformation stacking faults, which were limited by partial dislocations. The density of twins was not increased under the conditions of deformation reported here. As it can be concluded from investigations of Oettel et al. and from the results of the twin analysis, slip and generation of stacking faults take place on {112}-planes in ZnSiP₂ crystals. Crystallographic considerations on both processes are dealt with.     

Partial dislocations and stacking faults in cubic SiC

Numerous stacking faults and dislocations (formed by intersection of stacking faults and dislocations limiting nonintersecting stacking faults) in the 3C-SiC films grown by molecular beam epitaxy on a silicon substrate were studied by electron microscopy with the use of weak beams. A procedure for determining any of possible Burgers vectors of the (1/6)〈116〉-type glide dislocations and the (1/6) 〈110〉-and (1/3)〈001〉-type sessile partial dislocations (in face-centered cubic lattices) is developed based on the criterion of the contrast value. The sessile dislocations formed by intersections of stacking faults were shown to have the (1/6)〈110〉-and (1/3)〈001〈-type Burgers vectors. The width of nonintersecting stacking faults corresponds to the stacking-fault energy ranging within 0.1–2 mJ/m².     

Characterization of crystal defects in mixed tabular silver halide grains by conventional transmission electron microscopy and X-ray diffractometry

Tabular silver bromide grains with iodide uniformly mixed in the shell were investigated with conventional transmission electron microscopy. The shell region was found to contain a large number of stacking faults parallel with the {11 } edges and in some cases edge dislocations with a Burgers vector of type. An atomic model for the formation of the stacking faults during the growth is presented.     

Burgers Vectors of Dislocations in Creep-deformed Fe3Si Single Crystals

In creep-deformed Fe₃Si single crystals the Burgers vectors of the dislocations were examined by transmission electron microscopy. The Burgers vector in a sample deformed under conditions of 60 MPa and 575–600 °C was of the type 1/2 〈110〉, whereas 〈111〉 superlattice dislocations were not found. 1/2 〈110〉 is the shortest translation distance in the D0₃ superlattice structure of Fe₃Si.     

TEM Investigation of Stacking Faults in the Superconducting Compound YNi2B2C

To evaluate the influence of composition and high-temperature heat treatment on the occurrence of stacking faults and intergrowths in the layered superconducting compound YNi₂B₂C a series of polycrystalline samples and a single crystal were investigated by TEM. Stacking faults were found in the most inhomogeneous sample only, which was annealed at 1100°C. Homogenisation at temperatures of 1450°C and higher results in a recovery of stacking faults. The observed faults should develop during crystallisation by formation of extra planes of YC or Ni₂B, resulting in a local deviation from the stoichiometric composition. In highly faulted areas the distance of stacking faults was about 50nm. These faults have apparently no influence on the superconduction transition temperature T_c.     

Characterization of defects in GaP and GaAsP graded heterojunctions by transmission electron microscopy

Misfit dislocations are observed in graded heterojunctions GaAs_1?xP_x by electron microscopy. Results are in agreement with previous work concerning the nature of the dislocations (Lomer and 60° dislocations) and their density dependence on the phosphorus gradient. The discussion concerns the formation of Lomer dislocations and the possibility of reducing the density of inclined dislocations which reach the surface of the epitaxial layer. GaP substrates, S-doped, are examined by transmission electron microscopy. Numerous defects such as Frank loops, perfect loops, helical dislocations and precipitates are observed. A GaP homoepitaxial layer realized on this substrate is free from these defects but exhibits stacking faults. A zinc diffusion does not produce additional defect but a 1000 Å thick amorphous layer is observed a at the surface.     

TEM and X-ray investigations of defect structure of PbSnTe crystal

The Pb_0.8Sn_0.2Te single crystal grown by the Bridgman technique was examined by X-ray and TEM methods. The X-ray reflection topography revealed that the PbSnTe crystal consisted of monocrystallinic blocks with linear dimensions of 1–5 mm separated by low angle boundaries of tilt-twist character. “As grown” defects observed by TEM method have been identified as single perfect dislocations and dislocation pairs. A mean density of dislocations inside the crystal blocks was no more than 10³ cm⁻². Except “as grown” defects rows of mobile dislocations were observed. All of dislocations lines were characterized by the same type of Burgers vector, i.e. b = 1/2a〈110〉.     

Defect Structure in Te-doped GaAs Single Crystals after Plastic Deformation (II). Dislocation Slip and Cell Formation

At temperatures above the brittle-to-ductile transition (490 °C) in Te-doped GaAs three types of predominant defect configurations have been observed after uniaxial compression along a [001] direction: (i) twins and stacking faults (500 … 520 °C), (ii) slip zones of dislocations (≈550 °C) and (iii) dislocation cells (580 … 590 °C). In Part II quantitative details of the appearance of slip and cell formation are given. Leading segments of gliding half loops are mainly of 60° type. Cell walls were formed by multiple slip of perfect dislocations.     

Novel luminescence behaviors of Ce3+/Tb3+ co-doped phosphate glasses

In the present work, Ce³⁺/Tb³⁺ co-doped 60P₂O₅-30BaO-10B₂O₃ phosphate glasses are prepared and their luminescence properties are presented. Under excitation at 303 nm, the Ce³⁺ ions singly doped sample show a novel red emission besides the UV one. The co-doped samples show enhanced Tb³⁺ ions emission with the increasing of Tb³⁺ ions concentration at the cost of Ce³⁺ emission. The mechanism of this luminescent behavior is discussed with respect to the relevant energy transfer process.     

The relationships between crystal structure of alkaline earth metal hexagonal aluminate and 4f-5d transitions of Ce and Tb ions

The Mg-Sr-Ba hexagonal aluminates (MgSrBa)Al₁₂O₁₉ doped with either Ce³⁺ or Tb³⁺ ion have been synthesized by solid-state reaction. Crystal structure variations with the increasing Ba²⁺ concentration have been thoroughly studied. When the concentration of Ba²⁺ reaches 0.39, the crystal structure becomes the ideal magnetoplumbite-type (No. PDF #80-1195), however, it becomes the same structure as BaMgAl₁₀O₁₇ with space group P6₃/mmc when Sr²⁺ is completely replaced by Ba²⁺ ions. In Ce³⁺ doped compounds, the emission peak of the Ce³⁺ ion is gradually red-shifted when the concentration of Mg²⁺ ion increases, while the 4f-5d transition of Ce³⁺ at 260 nm splits into five components. In the Tb³⁺ doped compounds, the spin-allowed and spin-forbidden 4f-5d transitions of Tb³⁺ have been observed. The intensity of the spin-forbidden 4f-5d transition is gradually increased with decreasing Sr²⁺ concentration and becomes dominant when Sr²⁺ is completely replaced by Ba²⁺. These experimental observations are also discussed in the context and match well with the theoretical calculations of 4f-5d transitions of Tb³⁺.     

Influence of Ag nanoparticles on luminescent performance of SiO2:Tb3 + nanomaterials

Tb^3 + single-doped SiO₂ (SiO₂:Tb^3 +) and Tb^3 +, Ag co-doped SiO₂ (SiO₂:Tb^3 +–Ag) nanostructured luminescent materials were prepared by a modified Stöber method. Their microstructure and optical property were investigated using scanning electron microscopy, ultraviolet visible absorption and photoluminescence spectrophotometry. Results show that the samples are composed of well-dispersed near-spherical particles with a diameter about 50 nm, the highest fluorescence intensity is obtained when the doping concentration of Tb^3 + is 4.86 mol%, the corresponding internal quantum efficiency is 13.6% and the external quantum efficiency is 8.2%. The experimental results indicate that Ag nanoparticles can greatly enhance the light absorption at 226 nm and the light emission at 543 nm of SiO₂:Tb^3 +–Ag, and the fluorescence lifetime reduces with increasing Ag concentration in SiO₂:Tb^3 +–Ag. Additionally, the present results indicate that fluorescence enhancement is attributed to the local field enhancement and the increased radiative decay rates induced by Ag nanoparticles.     

Optical and structural properties of epitaxial GaN films grown by pulsed laser deposition

Epitaxial GaN films have been grown on c-cut sapphire substrates by pulsed laser deposition (PLD) using a KrF laser. The properties of GaN films were improved by increasing the growth temperature to 800°C and the nitrogen pressure during growth to 10 mTorr. Room-temperature photoluminescence exhibits a strong band-edge emission at 3.4 eV. From transmission electron microscopy (TEM), the predominant defects in PLD-GaN observed are stacking faults parallel to the interface and screw dislocations along c-axis, the latter differing from the previously published results where most of the threading dislocation in GaN grown by other techniques are of edge type with Burgers vector of .     

Epitaxial lateral overgrowth on (2 1¯ 1¯ 0) a-plane GaN with [0 1¯ 1 1]-oriented stripes

Epitaxial lateral overgrowth was applied to a-plane GaN on r-plane sapphire using SiO₂ stripe masks oriented parallel to [0 1¯ 1 1]. Coalescence and defect distribution was studied using scanning electron microscopy and cathodoluminescence. Defects, i.e., threading dislocations and basal plane stacking faults from the template propagate into the overgrown layer through the mask openings. Stacking faults spread into the whole overgrown layer, whereas threading dislocations are laterally confined in the region above the mask where a part of them is terminated at the inclined coalescence boundary. Lateral overgrowth and dislocation termination at the coalescence boundary leads to an improvement in luminescence intensity and crystal quality, in comparison to the template. The measured XRD rocking curve FWHM were 453″ with incidence along the [0 0 0 1] c-direction and 280″ with incidence along the [0 1 1¯ 0] m-direction.     

Stacking faults in deformed zinc and magnesium single crystals

Using the transmission electron microscopy dissociated dislocations containing stacking faults were observed in Mg single crystals, deformed in (0001) <1120> slip system, and in Zn single crystals deformed in {1122} <1123> slip system. The overlapping flat stacking faults lying in {1102} planes and dissociated triple nodes in (0001) planes are observed in Mg. In Zn flat stacking faults are found in {112 2} planes. The value of stacking fault energy γ has been determined in Mg crystals (γ ⋍ 10 erg/cm²). Such a low value of γ is attributed to the segregation of impurities on dislocations.     

Efficiency of dislocations as sinks of radiation defects in fcc copper crystal

The sink efficiency of perfect dislocations for self-point defects (interstitials and vacancies) in fcc copper crystal has been calculated by the kinetic Monte Carlo method in a temperature range of 293–1000 K and a range of dislocation densities from 1.3 × 10¹² to 3.0 × 10¹⁴ m^?2. Screw, mixed, and edge dislocations with a Burgers vector 1/2<110> in different slip systems are analyzed. The interaction energies of self-point defects with dislocations are calculated using the anisotropic theory of elasticity. Analytical expressions are proposed for the dependences of the calculated values of dislocation sink efficiency on temperature and dislocation density.     

Tb3+ luminescence enhancement of YAG:Tb3+ nanocrystals embedded in silica xerogel

The luminescence behavior of composite materials consisting of nanocrystals of Y_3?xAl₅O₁₂:Tb (YAG:Tb³⁺) embedded into silica xerogel has been studied. Blue and green luminescence of the materials is due to a cross-relaxation effect in Tb³⁺ ions doped into a YAG lattice. The materials with YAG:Tb³⁺ nanocrystals immobilized in silica exhibit enhancement of Tb³⁺ luminescence in comparison with the macrocrystalline YAG:Tb³⁺ powder. The Tb³⁺ luminescence intensity of a composite material dried at room temperature can be improved when higher aliphatic alcohols are applied in a one-pot procedure during a sol–gel synthesis. On the other hand, the Tb³⁺ luminescence is quenched in the presence of Ag nanoparticles in the material. The composite material (YAG:Tb³⁺ in silica) exhibits thermal stability at higher temperatures and achieves the highest emission intensity after having been annealed at 700 °C.     

The effects of annealing on non-polar (1 1 2¯ 0) a-plane GaN films

Non-polar a-plane (1 1 2¯ 0) GaN films were grown on r-plane sapphire by metal–organic vapor phase epitaxy and were subsequently annealed for 90 min at 1070 °C. Most dislocations were partial dislocations, which terminated basal plane stacking faults. Prior to annealing, these dislocations were randomly distributed. After annealing, these dislocations moved into arrays oriented along the [0 0 0 1] direction and aligned perpendicular to the film–substrate interface throughout their length, although the total dislocation density remained unchanged. These changes were accompanied by broadening of the symmetric X-ray diffraction 1 1 2¯ 0 ω-scan widths. The mechanism of movement was identified as dislocation glide, occurring due to highly anisotropic stresses (confirmed by X-ray diffraction lattice parameter measurements) and evidenced by macroscopic slip bands observed on the sample surface. There was also an increase in the density of unintentionally n-type doped electrically conductive inclined features present at the film–substrate interface (as observed in cross-section using scanning capacitance microscopy), suggesting out-diffusion of impurities from the substrate along with prismatic stacking faults. These data suggest that annealing processes performed close to film growth temperatures can affect both the microstructure and the electrical properties of non-polar GaN films.     

Synthesis and luminescent properties of novel RENbO4:Ln3+ (RE = Y, Gd, Lu; Ln = Eu, Tb) micro-crystalline phosphors

Using rare earth coordination polymers with aromatic carboxylic acids as the precursors of rare earth oxide components, with polyethylene glycol (PEG) as the dispersing media, micro-crystalline phosphors RENbO₄:Ln³⁺ (RE = Y, Gd, Lu; Ln = Eu, Tb) have been synthesized by an in situ co-precipitation method. Both X-ray diffraction and scanning electron microscopy have shown that the resultant samples present are crystalline with ‘rice glue ball’ micro-morphology and crystalline grain sizes in the range of 1–2 μm. The luminescent properties of these phosphors have been studied, which show that the best photoluminescent performance is achieved for GdNbO₄:Tb³⁺ or Eu³⁺. This was because Gd³⁺ plays an important role to enhance the luminescence of Tb³⁺ or Eu³⁺ in an energy transfer process. In addition, the influence of the doping concentration on the fluorescence behaviors has been examined. With increase of the doping concentration from 1 mol% to 5 mol%, both the red emission intensity of Eu³⁺ and the green emission intensity of Tb³⁺ increase.     

Tb3+-impregnated,non-porous silica glass possessing intense green luminescence under UV and VUV excitation

A colorless transparent luminescence material was successfully prepared by impregnation of leached, porous glass with Tb³⁺ ions followed by reductive sintering in a CO atmosphere. Tb³⁺ emissions under ultraviolet (UV) and vacuum ultraviolet (VUV) excitation clearly showed the most intense emission band to be situated at 543 nm, which corresponds to the ⁵D₄ → ⁷F₅ transition. Sintering of the Tb glass in a reducing atmosphere resulted in a significant enhancement of Tb³⁺ emission intensity in comparison with sintering in air. The presence of traces of cerium ions was verified in Tb glasses, and more Ce³⁺ ions were produced as a result of the reductive sintering. The increase in Ce³⁺ ions was believed to be mainly responsible for the enhancement of ⁵D₃ → ⁷F_j and ⁵D₄ → ⁷F_j transitions from Tb³⁺ ions owing to an energy transfer channel. A clearly defined difference in the spectral energy distribution of Tb³⁺ emissions was found for 231 nm UV and 160 nm VUV excitation of the Tb glass. The phenomenon of cross relaxation was only observed under 231 nm UV excitation. Different excitation mechanisms were taken into account. Direct excitation of Tb³⁺ ions together with Ce³⁺ ions occurred in the Tb glass under the 231 nm UV light, whereas indirect excitation consisting of host absorption of energy and transfer from host to Tb³⁺ ions occurred under the 160 nm VUV light.     

Microstructure and strain relaxation of orthorhombic TmMnO3 epitaxial thin films

Orthorhombic TmMnO₃ (o-TMO) thin films have been epitaxially stabilized on (110) SrTiO₃ substrates by pulsed laser deposition (PLD) technique. The microstructure and strain relaxation mechanism of o-TMO thin films are analyzed using transmission electron microscopy. It is shown that major defects in the films are misfit dislocations with Burgers vectors of type a_p〈010〉 and a_p〈110〉, whereas a_p〈110〉 dislocations tend to dissociate into partial dislocations with Burgers vectors of type 1/2a_p〈110〉. Strain in o-TMO films is relaxed by misfit dislocations as well as surface fluctuations, which is different from most of the previous studies of the perovskite thin films.