Continuous-wave and Q-switched laser operation of Nd:Gd0.18Y0.82VO4 mixed crystal

Efficient continuous-wave (cw), passively Q-switched, and actively Q-switched laser operations are demonstrated with a mixed vanadate crystal of Nd:Gd_0.18Y_0.82VO₄ under diode pumping. In a cw operation, an output power of 8.25 W is obtained at a maximum available incident pump power (P_in) of 15 W, with a slope efficiency of 56%. Using a Cr⁴⁺:YAG crystal of initial transmission of 62% as the saturable absorber for Q-switching, an average output power of 3.05 W is generated at pulse repetition frequency (PRF) of 16.7 kHz when the laser is pumped with the same maximum P_in. The pulse energy, pulse duration, and peak power are 183.3 μJ, 6.0 ns, and 30.6 kW, respectively. When actively Q-switched by an acousto-optic modulator, the laser produces an average output power of 5.5 W at PRF of 30 kHz with 16.2 W of pump power incident upon the laser crystal. The pulse energy, duration, and peak power are measured to be 183 μJ, 10.5 ns, and 17.5 kW, respectively.     

CW and Q-switched diode-pumped laser operation of Yb3+:NaLa(MoO4)2

Continuous wave (CW) and Q-switched diode-pumped laser operation of Yb³⁺:NaLa(MoO₄)₂ single crystal was to our knowledge, demonstrated for the first time. A CW output power of 220 mW and slope efficiency of 46% were obtained. Q-switched laser operation was achieved with a pulse duration of 60 ns average output power of 70 mW and slope efficiency of 22%. PACS 42.55.Xi; 42.60.Pk; 42.60.Gd.     

The study of green laser performances by using composite crystals of different initial transmissions

This paper reported a passively Q-switched green laser of LD pumped linear cavity structure by using Nd:YAG/Cr⁴⁺:YAG composite crystal and the type II phase matching KTP crystal. The dependence of average output power, pulse width and pulse repetition rate on pump power at different initial transmissions of Cr⁴⁺:YAG were measured and analyzed. With Cr⁴⁺:YAG of 80% initial transmission, under pump power of 13.97 W, the output average power is up to 681 mW, with pulse width of 200 ns and pulse repetition rate of 9.1 kHz. The laser operates in a fundamental mode.     

Pulse characteristics of passively Q-switched 1.34 μm Nd:GdVO<Subscript>4</Subscript>/Co<Superscript>2+</Superscript>:MgAl<Subscript>2</Subscript>O<Subscript>4</Subscript> laser

Passively Q-switched output of a diode-pumped 1.34 μm Nd:GdVO₄ laser was demonstrated by using Co²⁺:MgAl₂O₄(Co²⁺:MALO) crystal as the saturable absorber for the first time. When the transmission of output mirror is 15%, the Q-switched pulse width is 110 ns and a corresponding average output power is 460 mW under the pump power of 9.69 W. The optical-optical conversion efficiency is 36%. At about 330 kHz repetition rate, the single Q-switched pulse energy and the peak power are about 1.39 μJ and 12.6 W, respectively.     

Passively Q-switched laser performance of a diode-pump mixed Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> crystal

A diode-pumped passively Q-switched Nd:Lu_0.15Y_0.85VO₄ laser with a GaAs output coupler is demonstrated. By using a mixed crystal Nd:Lu_0.15Y_0.85VO₄ as laser medium, the passively Q-switched laser can generate shorter pulse width with higher peak power in comparison with the passively Q-switched Nd:LuVO₄ or Nd:YVO₄ lasers under the same laser cavity. At the incident pump power 11.9 W, the minimum pulse width of 3.23 ns and the maximum peak power 1.67 kW can be obtained. The average output power and the pulse repetition rate of the laser are also measured. The experimental results show that the mixed crystal is a promising laser medium for shorter Q-switched pulse with higher peak power.     

High repetition rate passively Q-switched diode-pumped Nd:YVO4 laser

We demonstrated an efficient and compact, diode-pumped passively Q-switched Nd:YVO₄ laser operation at 1.064 μm wavelength with high repetition rate, using Cr⁴⁺:YAG as saturable absorber, formed with a simple flat–flat resonator. The maximum CW output power of 4.05 W was obtained at the incident pump power of 8 W. For Q-switched operation, the maximum average output power was measured to be 1.4 W with the corresponding repetition rate of 200 kHz, the pulse width of 60 ns when the initial transmission of Cr⁴⁺:YAG crystal was 85%. The shortest pulse width of 12 ns, the largest pulse energy of 36 μJ and the highest peak power of 3 kW were obtained when the Cr⁴⁺:YAG crystal with an initial transmission of 60% was used.     

Diode-pumped passively Q-switched and mode-locked Nd:GGG laser at 1.3 μm with V<Superscript>3+</Superscript>:YAG saturable absorber

Using V³⁺:YAG crystal as the saturable absorber, a diode-pumped passively Q-switched and mode-locked Nd:GGG laser operating at 1.3 μm is realized for the first time. The mode-locking modulation depth of nearly 100% has been achieved. The maximum output power and the single Q-switched pulse energy are 410 mW and 8.3 μJ. The mode-locked pulse inside the Q-switched pulse has a repetition rate of 349 MHz, and its average pulse width is estimated to be about 750 ps.     

Direct numerical simulation of quasi-three-level passive Q-switched laser

The Runge-Kutta method is used to solve numerically the rate equations of quasi-three-level passive Q-switched laser directly without any approximate treatment of these differential equations. The 946 nm self-Q-switched Cr,Nd:YAG laser is chosen for example to describe the details. The time-dependence of intra-cavity photon density is obtained and its detailed real-time changing process is reproduced in numerical solution. The curves of laser output parameters such as average output power, pulse width, repetition rate, pulse energy and peak power changing with different cavity conditions such as pump power, output coupler reflectivity, Cr,Nd:YAG crystal length, Nd³⁺ ion and Cr⁴⁺ ion concentrations are simulated according to direct numerical solution rather than analytical expressions. This direct numerical simulation method can be widely used to describe and optimize the quasi-three-level passive Q-switched laser theoretically.     

LD泵浦Nd：YAG/Cr：YAG腔外频率变换高功率紫外激光器

用KTP晶体对激光二极管端面泵浦的Nd:YAG晶体;Cr:YAG被动调Q产生的1064nm脉冲激光器进行腔外倍频,用BBO晶体四倍频产生266 nm紫外激光.用15 W的LD阵列;当LD泵浦功率为12 W的情况下;红外(1064 μm)调Q平均输出功率为2.2 W;脉冲序列周期为40 μs;脉宽为18ns;峰值功率高达4.9kW.采用KTP腔外二倍频;532nm的绿光输出平均功率为850mW;用BBO腔外四倍频;266nm的紫外光输出平均功率高达215mW，绿光-紫外光光转换效率为25.2%, 红外到紫外总的转换效率为9.8%.     

Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

Diode-pumped passively Q-switched and Q-switch mode-locked Nd:YVO<Subscript>4</Subscript> laser using single-wall carbon nanotube based saturable absorber

We present the performance of diode end-pumped Nd:YVO₄ laser in Q-switched and Q-switched mode-locking oscillation using a single-walled carbon nanotube based saturable absorber, which was fabricated using similar vertical evaporation technique. The average output power, repetition rate and pulse width of the Q-switched laser output were studied with different output couplers. The maximum average output power was 130 mW. For Q-switched mode-locking operation, the repetition rate of the mode-locked pulses concentrated in the Q-switched envelope was 58 MHz. The repetition rate of the Q-switched envelope maintained at 18 kHz, while the pulse width decreased along with the increasing of pump power. The maximum average output power was 53 mW.     

Efficient diode-pumped passively Q-switched laser with Nd:YAG/Cr:YAG composite crystal

Diffusion bonded Nd:YAG/Cr:YAG composite laser crystal has been employed to perform a compact diode-pumped passively Q-switched laser. At the incident pump power of 3.3 W and pulse repetition rate of 16.3 kHz, the maximum average output of 592 mW has been obtained, corresponding to an optical-to-optical conversion efficiency of 18%. Stable passively Q-switched operation with peak power of 6.5 kW and pulse duration of 6 ns was also achieved. It has been experimentally revealed that Nd:host/Cr:YAG composite structure is a promising material for compact cost-effective Q-switched laser sources with high-peak power and short pulse duration. In addition, thermal lens effect (TLE) in the active medium and its impact on the Q-switched laser performance have been analyzed.     

High-power passively Q-switched Nd:YVO<Subscript>4</Subscript> UV laser at 355 nm

We report on an efficient high-power passively Q-switched UV laser at 355 nm. We take into account the second threshold criterion and the thermal-lensing effect to design and realize a compact reliable passively Q-switched Nd:YVO₄ laser with Cr⁴⁺:YAG as a saturable absorber. At an incident pump power of 16.3 W, the average output power at 1064 nm reaches 6.2 W with a pulse width of 7 ns and a pulse repetition rate of 56 kHz. Employing the developed passively Q-switched laser to perform the extra-cavity harmonic generations, the maximum average output powers at 532 nm and 355 nm are up to 2.2 W and 1.62 W, respectively.     

Compact passively Q-switched green laser with periodically poled MgO:LiNbO<Subscript>3</Subscript>

Passively Q-switched green output with Cr⁴⁺:YAG as saturable absorber and PPMgLN as the frequency doubling crystal was realized in a compact diode end-pumped Nd:YVO₄ laser. The green light output power, pulse width, pulse repetition rate, pulse energy and peak power with three Cr⁴⁺:YAG of different initial transmissions were investigated. The maximum average output power was 1.2 W at the pump power of 4.0 W and the maximum conversion efficiency was 30% with the Cr⁴⁺:YAG of 90% initial transmission. The maximum pulse energy and minimum pulse width were 10.9 μJ and 12 ns with the Cr⁴⁺:YAG of 75% initial transmission.     

Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd:YVO4 laser with a composite semiconductor absorber

By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and mode-locked diode-pumped microchip Nd:YVO₄ laser. With a 350-μm-thick crystal, the width of the Q-switched envelope was as short as 12 ns; the repetition rate of the mode-locked pulses inside the Q-switched pulse was more than 10 GHz. The average output power was 335 mW at a maximum pump power of 1.6 W. Q-switched envelope widths of 21 and 31 ns were also achieved with crystals 0.7 and 1.0 mm thick, respectively.     

LD泵浦Nd∶GdVO4/GaAs被动调Q激光器研究

报道了采用大功率半导体激光器端面泵浦Nd∶GdVO4晶体,利用GaAs晶片兼作饱和吸收被动调Q元件和输出耦合镜,实现了1.06 μm激光的被动调Q运转.在泵浦功率为13.9 W时,获得最高平均输出功率为3.6 W,脉冲宽度为252 ns,单脉冲能量为27 μJ以及峰值功率为107 W的激光脉冲.     

Spectroscopy,continuous-wave and <Emphasis Type="Italic">Q</Emphasis>-switched diode-pumped laser operation of Er<Superscript>3+</Superscript>,Yb<Superscript>3+</Superscript>:YVO<Subscript>4</Subscript> crystal

We report on the spectroscopy and, for the first time to our knowledge, continuous-wave and Q-switched diode-pumped laser operation of Er,Yb:YVO₄ crystal. Absorption and emission spectra of the crystal were determined. Lifetimes of Er^{3+ 4} I _13/2 and ⁴ I _11/2 levels that define laser performance of the crystal were measured and parameters of energy transfer between Yb³⁺ and Er³⁺ ions were estimated. cw output power of 115 mW with slope efficiency of 5.4% was achieved at 1604 nm. In the Q-switched mode an average output power of 81 mW with slope efficiency of 3.5% and pulse duration of 150 ns was obtained. In quasi-cw regime maximal peak power of 610 mW with slope efficiency of 6.7% was demonstrated. PACS 42.55.Xi; 42.60.Gd; 42.70.Hj     

Laser–diode-pumped passively Q-switched Nd:NaY(WO4)2 laser with GaAs saturable absorber

A laser–diode-pumped passively Q-switched new type crystal Nd³⁺:NaY(WO₄)₂ (known as Nd:NYW) laser with GaAs semiconductor saturable absorber has been realized. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on pump power for different output coupler reflectivities are measured. The coupled rate equations are used to simulate the Q-switched process of laser, and the numerical solutions agree with the experimental results.     

低温GaAs被动调Q锁模Nd:Gd0.42 Y0.58VO4 混晶激光器特性研究

采用低温生长GaAs晶体作为被动饱和吸收体兼输出镜,实现了Nd:Gd0.42Y0.58VO4混晶激光器的调Q锁模运转.研究了Nd:Gd0.42Y0.588VO4激光器的基频运转特性.在输出镜透射率T=10%、腔长L=40 mm的情况下,当抽运功率为8.6 W时,获得激光输出功率3.78 W,光-光转换效率为43.9%.并测量了Nd:Gd0.42Y0.58VO4混晶被动调Q激光器的输出特性.实验结果表明激光器调Q运转阈值为2 W,当抽运功率为3.7 W时,激光器出现调Q锁模行为;当抽运功率为8.6 W时,激光器调Q锁模深度达70%以上,对应的脉冲包络重复频率为670 kHz,半峰全宽为180 ns,平均输出功率为1.35 W,光-光转换效率为15.7%.     

Diode-pumped doubly passively Q-switched c-cut Nd:GdVO4 1.34 μm laser with V:YAG and Co:LMA saturable absorbers

By simultaneously using both V³⁺:YAG and Co:LMA saturable absorbers in the cavity, a diode-pumped doubly passively Q-switched c-cut Nd:GdVO₄ laser at 1.34 μm is demonstrated for the first time. The average output power, the pulse width and the pulse repetition rate have been measured. The experimental results show that the doubly passively Q-switched laser can generate shorter pulse width with higher peak power in comparison to the singly passively Q-switched laser only with V³⁺:YAG or Co:LMA saturable absorber. At the pump power 13 W, the pulse width has been compressed 83% and the peak power has been improved 15 times, respectively.