Improved photoluminescence of pulsed-laser-ablated Y<Subscript>1-x</Subscript>Gd<Subscript>x</Subscript>VO<Subscript>4</Subscript>:Eu<Superscript>3+</Superscript> thin film phosphors by Gd substitution

Gd-substituted Y_1-xGd_xVO₄:Eu³⁺ luminescent thin films have been grown on Al₂O₃(0001) substrates using pulsed-laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, surface morphology, and photoluminescence (PL) of the films are highly dependent on the amount of Gd. The photoluminescence (PL) brightness data obtained from Y_1-xGd_xVO₄:Eu³⁺ films grown under optimized conditions have indicated that the PL brightness is more dependent on the surface roughness than the crystallinity of the films. In particular, the incorporation of Gd into the YVO₄ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with Y_0.57Gd_0.40Eu_0.03VO₄ thin film whose brightness was increased by a factor of 2.5 and 1.9 in comparison with that of YVO₄:Eu³⁺ and GdVO₄:Eu³⁺ films, respectively. This phosphor have application to flat panel displays. PACS 78.20.-e; 78.55.-m; 78.66.-w     

Crystallinity and morphology dependent luminescence of Li-doped Y2−xGdxO3:Eu thin film phosphors

The influence of lithium doping on the crystallization, the surface morphology, and the luminescent properties of pulsed laser deposited Y_2−xGd_xO₃:Eu³⁺ thin film phosphors was investigated. The crystallinity, the surface morphology, and the photoluminescence (PL) of films depended highly on the Li-doping and the Gd content. The relationship between the crystalline and morphological structures and the luminescent properties was studied, and Li⁺ doping was found to effectively enhance not only the crystallinity but also the luminescent brightness of Y_2−xGd_xO₃:Eu³⁺ thin films. In particular, the incorporation of Li and Gd into the Y₂O₃ lattice could induce remarkable increase in the PL. The highest emission intensity was observed Li-doped Y_1.35Gd_0.6O₃:Eu³⁺ thin films whose brightness was increased by a factor of 4.6 in comparison with that of Li-doped Y₂O₃:Eu³⁺ thin films.     

Enhanced luminescence in ZnGa<Subscript>2</Subscript>O<Subscript>4-x</Subscript>S<Subscript>x</Subscript>:Mn<Superscript>2+</Superscript> thin-film phosphors grown on MgO(100) substrate

Mn-doped ZnGa₂O_4-xS_x thin-film phosphors have been grown using a pulsed laser deposition technique at varying growth conditions. Structural characterization was carried out on a series of ZnGa₂O_4-xS_x:Mn²⁺ films grown on MgO(100) substrates using Zn-rich ceramic targets. Oxygen pressure was fixed at 100 mTorr and substrate temperatures were varied from 500 to 700 °C. The results of X-ray-diffraction patterns showed that the lattice constants of the ZnGa₂O_3.95S_0.05:Mn²⁺ thin films decrease with the substitution of sulfur for the oxygen in ZnGa₂O₄. Measurements of photoluminescence (PL) properties of ZnGa₂O_4-xS_x:Mn²⁺ thin films have indicated that MgO(100) is one of the most promising substrates for the growth of high-quality ZnGa₂O_4-xS_x:Mn²⁺ thin films. In particular, the incorporation of sulfur into the ZnGa₂O₄ lattice could induce a remarkable increase of PL. The highest green-emission intensity was observed with ZnGa₂O_3.95S_0.05:Mn²⁺ films, whose brightness was increased by a factor of 3.5 in comparison with that of ZnGa₂O₄:Mn²⁺ films. This phosphor may be promising for application to flat-panel displays. PACS 78.20.-e; 78.55.-m; 78.66.-w     

Crystalline-phase-dependent red emission behaviors of Gd2O3:Eu3+ thin-film phosphors

Gd₂O₃:Eu³⁺ luminescent thin films have been grown on Al₂O₃(0001) substrates using pulsed-laser deposition. The films grown at different deposition conditions showed different crystalline phases, surface morphologies and luminescent characteristics. Both cubic and monoclinic crystalline phases were observed for the Gd₂O₃:Eu³⁺ films, and the crystalline structure and the surface morphology of the films were highly dependent on the oxygen pressure and substrate temperature. The cubic system showed a higher luminescence than the monoclinic system. The luminescence characteristics were strongly influenced by not only the crystalline structure but also the surface morphology of the films. The photoluminescencebrightness data obtained from Gd₂O₃:Eu³⁺ films indicate that Al₂O₃(0001) is a promising substrate for growth of high-quality Gd₂O₃:Eu³⁺ thin-film red phosphor. In particular, the Gd₂O₃:Eu³⁺ films showed a much better photoluminescence behavior than a Y₂O₃:Eu³⁺ films with the same thickness. PACS 78.20.-e; 78.55.-m; 78.66.-w     

Photolumiscent Properties of Nanorods and Nanoplates Y<Subscript>2</Subscript>O<Subscript>3</Subscript>:Eu<Superscript>3+</Superscript>

Nanorods and nanoplates of Y₂O₃:Eu³⁺ powders were synthesized through the thermal decomposition of the Y(OH)₃ precursors using a microwave-hydrothermal method in a very short reaction time. These powders were analyzed by X-ray diffraction, field emission scanning electron microscopy, Fourrier transform Raman, as well as photoluminescence measurements. Based on these results, these materials presented nanoplates and nanorods morphologies. The broad emission band between 300 and 440 nm ascribed to the photoluminescence of Y₂O₃ matrix shifts as the procedure used in the microwave-hydrothermal assisted method changes in the Y₂O₃:Eu³⁺ samples. The presence of Eu³⁺ and the hydrothermal treatment time are responsible for the band shifts in Y₂O₃:Eu³⁺ powders, since in the pure Y₂O₃ matrix this behavior was not observed. Y₂O₃:Eu³⁺ powders also show the characteristic Eu³⁺ emission lines at 580, 591, 610, 651 and 695 nm, when excited at 393 nm. The most intense band at 610 nm is responsible for the Eu³⁺ red emission in these materials, and the Eu³⁺ lifetime for this transition presented a slight increase as the time used in the microwave-hydrothermal assisted method increases.     

Eu<Superscript>3+</Superscript> As a Luminescent Probe for Studying the Structure of R<Subscript>2</Subscript>O<Subscript>3</Subscript> Materials (R = Y,Eu, and Gd)

Spectra of Eu³⁺ in various dielectric matrices (Gd₂O₃:Eu³⁺, Y₂O₃:Eu³⁺, Eu₂O₃, and mSiO₂/Gd₂O₃:Eu³⁺ mesoporous particles) are studied by local cathodoluminescence. The results allowed identification of the local environment of Er³⁺ ions in amorphous samples and detection of the monoclinic Eu₂O₃ phase impurity in samples with yttrium oxide. The cathodoluminescence spectra of chemically pure Y₂O₃, Eu₂O₃, and Gd₂O₃ are recorded. Conclusions about the structural features of the materials are made and confirmed by other methods (XRD and EPMA).     

Optical absorption by Nd<Superscript>3+</Superscript> and Gd<Superscript>3+</Superscript> ions in epitaxial films grown on Gd<Subscript>3</Subscript>Ga<Subscript>5</Subscript>O<Subscript>12</Subscript> substrates from a lead-containing solution melt

Epitaxial films of composition (Gd,Nd)₃Ga₅O₁₂ or (Gd,Y,Nd)₃Ga₅O₁₂ with a neodymium content varying from 0.3 to 15 at. % are grown by liquid-phase epitaxy from a supercooled PbO-B₂O₃-based solution melt on Gd₃Ga₅O₁₂(111) substrates. The optical absorption spectra of the epitaxial films grown are measured in the wavelength range 0.2–1.0 µm. The results of interpreting the absorption bands observed in the spectra are used to construct the energy level diagrams of Nd³⁺ and Gd³⁺ ions in the matrices of the epitaxial films.     

Correction of the band gap of Y<Subscript>2</Subscript>O<Subscript>3</Subscript>:Eu<Superscript>3+</Superscript> phosphor

Submicron samples of Y₂O₃:Eu³⁺ phosphor with elevated photoluminescence (PL) efficiency and activator concentration of 9 at % obtained by the sol–gel method were investigated by diffuse reflection spectroscopy and PL spectroscopy. It is found that the diffuse reflection spectrum in the vicinity of the fundamental absorption edge (<300 nm) is distorted by the superposition of the PL of Eu³⁺ ions, as a result of which the calculated value of optical band gap E _g of the Y₂O₃ matrix is overestimated. An algorithm for eliminating the PL influence on the absorption edge is proposed, and the correct E _g values are found to be 4.61 ± 0.12 and 4.50 ± 0.12 eV for annealing at 700 and 1300°C, respectively.     

Luminescence thermometry using Gd<Subscript>2</Subscript>Zr<Subscript>2</Subscript>O<Subscript>7</Subscript>:Eu<Superscript>3+</Superscript>

In this paper we study the possibility of using the synthesized nanopowder samples of Gd₂Zr₂O₇:Eu³⁺ for temperature measurements by analyzing the temperature effects on its photoluminescence. The nanopowder was prepared by solution combustion synthesis method. The photoluminescence spectra used for analysis of Gd₂Zr₂O₇:Eu³⁺ nano phosphor optical emission temperature dependence were acquired using continuous laser diode excitation at 405 nm. The temperature dependencies of line emission intensities of transitions from ⁵D₀ and ⁵D₁ energy levels to the ground state were analyzed. Based on this analysis we use the two lines intensity ratio method for temperature sensing. Our results show that the synthesized material can be efficiently used as thermographic phosphor up to 650 K.     

The synthesis of (Y<Subscript>1-x</Subscript>Gd<Subscript>x</Subscript>)<Subscript>2</Subscript>O<Subscript>3</Subscript>:Eu phosphor particles by flame spray pyrolysis with LiCl flux

(Y_1-xGd_x)₂O₃:Eu phosphor particles with dense morphology were prepared by flame spray pyrolysis and the effect of LiCl flux on the crystallinity, morphology, and photoluminescence characteristics of the particles was investigated. All as-prepared particles had monoclinic phase regardless of flux and had different luminescence characteristics from those of commercial Y₂O₃:Eu particles of cubic phase. The addition of LiCl flux reduced the post-treatment temperature by 300 °C for phase transformation from the monoclinic phase to the cubic phase. The post-treatment temperature of (Y_0.75Gd_0.25)₂O₃:Eu particles for phase transformation decreased from 1100 °C to 700 °C when LiCl flux was used. The morphology of the particles was also influenced by the Y/Gd ratio and the LiCl flux. The as-prepared particles had spherical shape and non-aggregation characteristics regardless of Y/Gd ratio and flux. The sphericity of the as-prepared particles prepared without flux was maintained after post-treatment for phase transformation in all Y/Gd ratios. However, LiCl addition promoted the aggregation between product particles. The prepared particles had high photoluminescence intensities comparable to that of the commercial product. PACS 64.70.Kb; 78.55.-m; 81.20.Rg; 75.50.Tt     

Enhanced photoluminescence of Ca<Subscript>2</Subscript>Al<Subscript>2</Subscript>SiO<Subscript>7</Subscript>:Eu<Superscript>3+</Superscript> by charge compensation method

The effect of compensator on optical properties of Ca₂Al₂SiO₇:Eu³⁺ is systematically investigated by the X-ray powder diffraction, photo-luminescence (PL) properties and lifetime. It is obviously observed that the PL intensity of Eu³⁺ under 394 nm excitation increases in the order of Ca_1.86Eu_0.14Al₂SiO₇ (CAS), Ca_1.72Na_0.14Eu_0.14Al₂SiO₇ (CASNa) and Ca_1.86Eu_0.14Al_2.14Si_0.86O₇ (CASAl), the intensity of Eu³⁺ are 100%, 134%, 184%, and the lifetime of Eu³⁺ are 0.75 ms, 1.28 ms and 1.39 ms, respectively. A charge compensation model is proposed to explain the changes in the emission intensity and lifetime of Eu³⁺ in Ca₂Al₂SiO₇ with different compensation methods. PACS 78.55.-m; 61.72.Ji; 61.43.Gt; 42.70.-a; 74.62.Dh     

Morphology and crystalline-phase-dependent luminescence of Li-doped Gd2O3:Eu3+ thin films grown by pulsed laser deposition

Gd₂O₃:Eu³⁺ and Li-doped Gd₂O₃:Eu³⁺ luminescent thin films have been grown on Si(100) substrates using pulsed laser deposition. The films grown at different deposition conditions show different crystalline and morphology structures and luminescent characteristics. Although both cubic and monoclinic crystalline structures were observed in both Gd₂O₃:Eu³⁺ and Li-doped Gd₂O₃:Eu³⁺ films, the cubic structure becomes more dominant for Li-doped Gd₂O₃:Eu³⁺ films. The photoluminescence brightness data obtained from Li-doped Gd₂O₃:Eu³⁺ films indicate that Si(100) is a promising substrate for growth of high-quality Li-doped Gd₂O₃:Eu³⁺ thin-film red phosphor. In particular, the incorporation of Li⁺ ions into the Gd₂O₃ lattice induced a change of crystallinity and enhanced surface roughness. Two major factors to determine photoluminescence brightness for Li-doped Gd₂O₃:Eu³⁺ films were crystalline phase and surface roughness. The highest emission intensity was observed with Gd_1.84Li_0.08Eu_0.08O₃, whose brightness was a factor of 2.1 larger than that of Gd₂O₃:Eu³⁺ films. This phosphor is promising for applications in flat-panel displays. PACS 78.20.-e; 78.55.-m; 78.66.-w     

Photoluminescence behavior of pulsed laser deposited ZnGa<Subscript>2</Subscript>O<Subscript>4</Subscript> thin-film phosphors grown on various substrates

ZnGa₂O₄ thin-film phosphors have been grown on Si(100), Al₂O₃(0001) and MgO(100) substrates using pulsed laser deposition. The structural characterization was carried out on a series of ZnGa₂O₄ films grown on various substrates under various substrate temperatures and oxygen pressures. The films grown on these substrates not only have different crystallinity and surface morphology, but also different Zn/Ga composition ratio. The crystallinity and photoluminescence (PL) of the ZnGa₂O₄ films are highly dependent on the deposition conditions, in particular the stoichiometry ratio of Zn/Ga and the kind of substrate. The variation of Zn/Ga in the films also depends on not only the oxygen pressure but also the substrate temperature during deposition. The PL properties of pulsed laser deposited ZnGa₂O₄ thin films have indicated that Al₂O₃(0001) and MgO(100) are promising substrates for the growth of high-quality ZnGa₂O₄ thin films and that the luminescence brightness depends on the substrate. The luminescence spectra show a broad band extending from 350 to 600 nm and peaking at 460 nm. Received: 11 July 2002 / Accepted: 31 July 2002 / Published online: 28 October 2002 RID="*" ID="*"Corresponding author. Fax: +82-51-6206356, E-mail: jhjeong@pknu.ac.kr     

Synthesis and Optical Characterization of Red-Emitting BaTa<Subscript>2</Subscript>O<Subscript>6</Subscript>:Eu<Superscript>3+</Superscript> Phosphors

Undoped and Eu³⁺ doped BaTa₂O₆ phosphors were synthesized via solid state reaction method and characterized by using XRD, SEM-EDS and photoluminescence (PL) analyses. The XRD results revealed that the crystal structure of BaTa₂O₆ allowed up to 10 mol% levels of Eu³⁺ ions due to the TTB characteristic network of adjacent octahedrals. SEM-EDS analyses confirmed the formation of BaTa₂O₆ structure and EuTaO₄ secondary phase. BaTa₂O_6:Eu³⁺ phosphors exhibited orange and red emissions at 592.2 nm and 615.7 nm in the visible region respectively. The Commission Internationale d’Eclairage (CIE) chromaticity coordinates of the BaTa₂O_6:Eu³⁺ phosphors that excited at λ _ex = 400 nm ranged from orangish-red to pinkish-red depending on increasing Eu³⁺ concentration.     

Luminescence in Dy<Superscript>3+</Superscript> and Eu<Superscript>3+</Superscript> Activated K<Subscript>3</Subscript>Al<Subscript>2</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>

The Dy³⁺ and Eu³⁺ activated K₃Al₂ (PO₄)₃ phosphors were prepared by a combustion synthesis. From a powder X-ray diffraction (XRD) analysis the formation of K₃Al₂ (PO₄)₃ was confirmed. In the photoluminescence emission spectra, the K₃Al₂(PO₄)₃:Dy³⁺ phosphor emits two distinctive colors: blue and yellow whereas K₃Al₂(PO₄)₃:Eu³⁺ emits red color. Thus the combination of colors gives BYR (blue–yellow–red) emissions can produce white light. These phosphors exhibit a strong absorption between 340 and 400 nm which suggest that present phosphor is a promising candidate for producing white light-emitting diodes (LED).     

Investigation of luminescence spectra of the Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript> and Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>:Ce single-crystal films

The luminescence spectra of single-crystal films and bulk crystals of yttrium-aluminum garnet Y₃Al₅O₁₂ and Ce³⁺-activated Y₃Al₅O₁₂ were investigated. It was shown that the room-temperature luminescence intensity of the Ce³⁺-free single-crystal Y₃Al₅O₁₂ film was considerably lower than that of the bulk crystals, while the luminescence intensity of the Ce³⁺ ions in the Y₃Al₅O₁₂:Ce films was considerably higher than that one for the corresponding bulk crystal.     

luminescence of BaGa<Subscript>2</Subscript>Se<Subscript>4</Subscript> crystals activated by Eu<Superscript>2+</Superscript> and Ce<Superscript>3+</Superscript> ions

We have studied the effect of doping with Eu²⁺ and Ce³⁺ ions on the photoluminescence (PL) of BaGa₂Se₄ crystals in the temperature range 77–300 K. We have established that the broad bands with maxima at wavelengths 456 nm and 506 nm observed in the photoluminescence spectra of BaGa₂Se₄:Ce³⁺ crystals are due to intracenter transitions 5d → ²F_7/2 and 5d →²F_5/2 of the Ce³⁺ ions, while the broad photoluminescence band with maximum at 521 nm in the spectrum of BaGa₂Se₄:Eu²⁺ is associated with 4f⁶ 5d → 4f⁷ (⁸S_7/2) transitions of the Eu²⁺ ion. We show that in BaGa₂Se₄:Eu²⁺,Ce³⁺ crystals, excitation energy is transferred from the Ce³⁺ ions to the Eu²⁺ ions.     

Luminescence and scintillation properties of Y<Subscript>3</Subscript>A<Subscript>l5</Subscript>O<Subscript>12</Subscript>:Ce single crystals and single-crystal films

Luminescence and scintillation properties of Y₃A_l5O₁₂:Ce single crystals grown from the melt by the Czochralski and horizontal directed crystallization methods in various gas media and Y₃A_l5O₁₂:Ce single-crystal films grown by liquid-phase epitaxy from a melt solution based on a PbO-B₂O₃ flux have been comparatively analyzed. The strong dependence of scintillation properties of Y₃A_l5O₁₂:Ce single crystals on their growth conditions and concentrations of Y_Al antisite defects and vacancy defects has been established. Vacancy defects are involved in Ce³⁺ ion emission excitation as the centers of intrinsic UV luminescence and trapping centers. It has been shown that Y₃A_l5O₁₂:Ce single-crystal films are characterized by faster scintillation decay kinetics than single crystals and a lower content of slow components in Ce³⁺ ion luminescence decay during high-energy excitation due to the absence of Y_Al antisite defects in them and low concentration of vacancy defects. At the same time, the light yield of Y₃A_l5O₁₂:Ce single-crystal films is comparable to that of single crystals grown by directed crystallization due to the quenching effect of the Pb²⁺ ion impurity as a flux component and is slightly lower (∼25%) than the light yield of single crystals grown by the Czochralski method.     

Red,Yellow, Blue and Green Emission from Eu<Superscript>3+</Superscript>, Dy<Superscript>3+</Superscript> and Bi<Superscript>3+</Superscript> Doped Y<Subscript>2</Subscript>O<Subscript>3</Subscript>nano-Phosphors

Rare earth elements (RE = Eu³⁺& Dy³⁺)and Bi³⁺ doped Y₂O₃ nanoparticles were synthesized by urea hydrolysis method in ethylene glycol, which acts as reaction medium as well as a capping agent, at a low temperature of 140 °C,followed by calcination of the obtained product. Transmission electron microscope (TEM) images reveals that ovoid shaped Y₂O₃ nanoparticles of around 22–24 nm size range were obtained in this method. The respective RE and Bi³⁺ doped Y₂O₃ precursor nanoparticles when heated at 600 and 750 °C, retains the same shape as that of the as-synthesized Y₂O₃ precursor samples. From EDAX spectra, the incorporation of RE ions into the host has been studied. XRD pattern reveals the crystalline nature of the heated nanoparticles and indicate the absence of any impurity phase other than cubic Y₂O₃.However, the as-synthesized nanoparticles were highly amorphous without the presence of any sharp XRD peaks. Photoluminescence study suggests that the synthesized samples could be used as red (Eu³⁺), yellow (Dy³⁺), blue and green (Bi³⁺)emitting phosphors.