Influence of laser fluence and dopant gas pressure on properties of photochemical doping of Si into GaAs using XeCl excimer Laser

Silicon doping into GaAs has been performed with the combination of pulsed XeCl excimer laser (wavelength: 308 nm) and silane gas (SiH₄). Sheet resistances and depth profiles of the Si-doped GaAs as the functions of laser fluence, the number of laser pulses and gas pressure have been measured in order to make clear the relation between properties of doped GaAs and irradiation conditions. The secondary ion mass spectroscopy (SIMS) has revealed that the depth of Si in GaAs is limited in such a very shallow region (30–110 nm) that might be controlled easily by irradiation conditions. The efficiency for carrier generation of Si in GaAs with laser fluence is discussed.     

Formation of p-type layer by KrF excimer laser doping of carbon into GaAs in CH4 gas ambient

Carbon doping of GaAs using a KrF excimer laser to form a p-type active layer is described. Methane gas (CH₄) was used as a source of the C acceptor. Various quantities such as sheet resistance, surface carrier density, Hall mobility, and depth profile of C-doped GaAs are measured as the functions of laser fluence and laser pulse. It is shown that C atoms are doped only within a limited depth as shallow as 50 nm or less and with extremely high concentration exceeding 1×10²¹ cm^–3. The maximum activation efficiency is found to be 69.0%. Laser induced changes of surface morphologies and electron diffraction patterns are also discussed. Furthermore, non-alloyed ohmic contacts using laser-doped p-type GaAs are demonstrated.     

Laser-induced doping of GaAs

Thin layers of GaAs are heavily doped locally by laser induced Se or Zn diffusion. H₂Se or diethylzinc gases are used to provide Se or Zn dopant atoms. The surface is locally heated with 3 ns light pulses from a Q-switched frequency doubled Nd-YAG laser. The doping process is described in detail. Doping profiles and sheet carrier concentrations are measured as a function of substrate temperature, laser fluence and processing time. Dopant concentrations of more than 10²¹ cm^–3, with a thickness of the doped layer of less than 20 nm can be achieved.     

The rôle of one- and few-phonon processes in the quantum diffusion of light particles in superconductors

The hopping motion of charged light particles in superconducting metals is discussed within the framework of a two-state model. In addition to the coupling to the superconducting electrons, the influence of phonons is investigated. It is shown that sufficiently far below the critical temperature the hopping rate is dominated by one-phonon processes if the static energy shifts between the particle ground states (so-called energy asymmetries) are finite but smaller than twice the BCS energy gap. The rôle of special two-phonon processes (named diphonon processes) resulting from non-linear coupling to the lattice is investigated. In the limit of energy asymmetries larger than twice the BCS energy gap phonon coupling does not crucially influence the jump rates.This article was processed using Springer-Verlag T_EX Z. Physik B macro package 1.0 and the AMS fonts, developed by the American Mathematical Society.     

Deactivation of TiO2 photocatalytic films loaded on aluminium: XPS and AFM analyses

TiO₂ films were loaded on aluminium substrates by dip-coating method. Based on cyclic photocatalytic degradation experiments using benzamide as model molecule, XPS and AFM tests, the deactivating behaviour of the samples was studied. Experiment results show that the samples with less coating times (one to four times) deactivated very quickly, while the samples coated more than five times did not lose activity. Al element was proved to segregate from substrate and diffuse into TiO₂ films during calcination and annealing treatment, existing as mixture of Al₂O₃ and Al(OH)₃ at the boundaries among TiO₂ particles. During photocatalytic reactions in aqueous phase, the transformation of Al from Al₂O₃ to Al(OH)₃ and the leaching of the latter brought out serious alternation of surface morphology to the samples coated one to three times, on whose surface Ti³⁺ and Ti²⁺ centers were also detected after six cycles of photocatalytic reactions, while fresh films and the tested films which did not deactivate possess unique +4 valence Ti. The alteration of surface morphology, together with the change of valence of surface Ti element, resulted in the deactivation encountered in this research.     

UV desorption and photochemistry of dimethylgold hexafluoroacetylacetonate adsorbed on a quartz substrate

The photodesorption and photodecomposition pathways of dimethylgold hexafluoroacetylacetonate, DMG (hfac), adsorbed on a cooled quartz substrate is reported for 222-nm KrCl excimer laser radiation. The time-of-flight (TOF) of neutral photoproducts, desorbed from the surface of the gold film formed during the experiment, were analyzed under collisionless conditions by a differentially-pumped mass spectrometer. Extensive dissociation of adsorbed DMG (hfac) into DMG and the hfac ligand was observed. The ligand was found to recombine with a CH₃ radical on the surface. Translational energy distributions for the detected species were obtained by deconvoluting the TOF curves into a self-consistent set of Maxwell-Boltzmann distributions for the desorbed parent molecule, laser-induced decomposition products, and surface recombination reaction products. The implications of these results for the mechanistic details of the low-pressure, laser-assisted organometallic deposition of DMG(hfac) are discussed.ONT/NRL Research Associate (Nov. 1987-Oct. 1988)NRC/NRL Cooperative Research Associate     

REMPI as a tool for studies of OH radicals in catalytic reactions

2 +? O₂→H₂O on polycrystalline Pt foils has been studied by detection of desorbing OH radicals using the Resonance Enhanced Multiphoton Ionization, REMPI, technique. The measurements were performed at catalyst temperatures of 1000–1400 K and a total pressure below 10^-4 mbar. The studies of OH desorption by REMPI were achieved using a two-photon excitation D²Σ^-–X²Π (1–0), followed by one-photon ionization. The ions were detected in a time-of-flight mass spectrometer, TOF-MS, in order to avoid interference from non-resonantly ionized molecules. By applying TOF-MS, a simultaneous non-resonant ionization and detection of H₂, O₂ and H₂O was achieved. Recorded REMPI spectra were compared with spectra simulated using known molecular constants. The kinetics of the reaction derived from the measurements were compared with what was obtained in earlier LIF detection of OH, performed at higher total reactant pressure using the A–X transition. REMPI TOF-MS is shown to be a complement to LIF for reaction studies below 5×10^-4 mbar total pressure, where LIF is too insensitive for quantification. The reaction kinetics was found to be in agreement with a theoretic model and previous LIF studies. Received: 8 March 1996/Revised version: 4 October 1996     

Entropy-controlled site occupation of CO adsorbed on Ni(100)

The adsorption of CO on a Ni(100) surface has been studied by FT-IRAS in the temperature range from 85 K to 300 K. At 300 K and for =0.5, the CO molecules are predominantly adsorbed in on-top sites with only a minor fraction located at two-fold bridge sites. Measurements on a Ni(100) surface pre-covered with sulphur, oxygen and carbon indicate that the occupation of bridge sites may be caused by small amounts of surface impurities. The relative broadness of the infrared bands is explained by CO molecules occupying intermediate positions at domain walls. Upon lowering the temperature, the bridge sites are increasingly occupied at the expense of terminal sites. This process is completely reversible and is explained by a contribution of the hindered translations of the adsorbed CO molecules to the entropy. At 85 K and for low initial coverages, we observe an unusual high CO stretching frequency at 2205 cm^–1 which cannot be explained at present.     

Isotope effects in electron impact desorption of CO and O2 adsorbed on the (110) plane of tungsten

Results on the isotope effect for total and ionic desorption cross sections in the electron impact desorption of various binding states of CO on the (110) plane of tungsten, and of oxygen on this plane are presented and discussed. It is shown that the observations allow a dissection of cross sections into excitation cross sections and escape probabilities, and that the latter can be used to estimate lifetimes of excited or ionic states. It is found that excitation cross sections for total desorption are of the order of 10⁻¹⁶–10⁻¹⁷ cm², but seem to be significantly smaller in some cases for excitation to ionic states, suggesting that different excitations are involved. In all cases examined here the isotope effect for total desorption is much smaller than for ion production. This can be explained by the fact that ion lifetimes are somewhat shorter than those of excited neutrals. Lifetimes are estimated, in the cases examined, to be of the order of 10⁻¹⁴s.     

Infrared absorption of H2 adsorbed on porous glass,silica gel,and MgO

Infrared absorption of the vibrational band of H₂ in the bulk is known to arise from overlap and quadrupolar interactions. For adsorbed H₂, in addition to intermolecular interactions, an interfacial mechanism of inducing absorption has been identified in porous Vycor glass. A large enhancement of the fundamental vibrational line (by a factor of 60) from the bulk H₂ (liquid) has been observed. The vibrational overtone absorption is similarly enhanced by 150. We discuss these results as well as infrared absorption measurements for H₂ on MgO and silica gels.     

Adsorption of cyclic hydrocarbons on Pt and the interaction of the adsorbed species with hydrogen

The adsorption of six-membered hydrocarbon cycles and cyclopentane and the interaction of hydrogen with the adsorbed layer on polycrystalline Pt-foil have been studied. The work function change (Δφ) was followed by a Kelvin probe and the C/Pt peak ratio was determined by Auger electron spectroscopy. Combining these two techniques made it possible to distinguish between chemisorption via σ-bonds and π-complex formation. Benzene and toluene adsorbed first as π-complex while cyclohexane showed initially a partial aromatization and a π-complex-like bonding to the surface. Excess hydrocarbon or addition of hydrogen transformed the π-complex into σ-bonded species. Cyclopentane adsorbed via σ-bonds and showed no significant hydrogen effect.     

Fluorescence properties of dyes adsorbed to silver islands,investigated by picosecond techniques

The fluorescence properties of dye molecules (rhodamine 6G and erythrosin) adsorbed on pure glass surfaces and on silver islands films are investigated by cw and picosecond time-resolved methods. On pure glass surfaces we observe concentration quenching below a critical intermolecular distance (reduction of the fluorescence power per molecule as well as shortened and non-exponential fluorescence decay). On silver islands films the shortening in fluorescence lifetime is more drastic and is nearly independent of the intermolecular distance. This behavior suggests an electrodynamic interaction between dye monomers and plasmons in the metal particles, modified by a damping influence of dye dimers.     

Mercury induced reorientation of alkanethiolates adsorbed on gold

3 -(CH₂)₂₁-SH) were investigated by IR-vis sum frequency generation (SFG). Well-ordered monolayers and films with submonolayer coverage with a high number of gauche conformations were prepared on polycrystalline gold substrates. Exposure to a saturated mercury atmosphere induces a major reorganization of the adsorbate phase indicated by a decrease of the average cant angle. Additionally, well-ordered films show an increase of gauche defects upon amalgamation. In contrast, films with submonolayer coverage exhibit an improvement of molecular order. The experiments suggest that amalgamation flattens the corrugation potential of the substrate and yields a separation of the thiol layer into areas of low thiol density with highly disordered alkyl chains and of higher density than on gold with an orientation of the molecules similar to what is observed on silver substrates. Received: 13 November 1998     

Volume and grain boundary diffusion of implanted 113Sn in aluminium

Volume and grain boundary diffusion of ¹¹³Sn in aluminium was investigated with the radiotracer method. The implantation technique was used for tracer deposition to avoid problems of tracer hold-up caused by the oxide layer always present on aluminium. The diffusion penetration was chosen large enough to permit serial sectioning of samples with the aid of a microtome.The temperature dependence of the volume diffusivity was determined as D(T)=4.54×10^–5×exp[–(114.5±1.2)kJmol^–1/RT] m ² s ^–1. This confirms previous measurements from our group which already showed that Sn is the fastest foreign metal diffusor so far investigated in aluminium.Grain boundary diffusion of ¹¹³Sn in Al polycrystals was measured in the type-B kinetic regime. The grain boundary diffusion product P=sD _gb (s=segregation factor, =grain boundary width, D _gb=grain boundary diffusivity) was found to be strongly affected by the impurity content of aluminium. For Al polycrystals of 99.9992% nominal purity we obtained P _5N(T)=1.08×10^–8exp [–(96.9±7.5) kJ mol^–1/RT] m³ s^–1 and for less pure Al polycrystals of 99.99% nominal purity P _4N(T)=3.0×10^–10 exp [–(90.1±4.2) kJ mol^–1/RT] m³ s^–1 was determined. The grain boundary diffusion product in the purer material is more than one order of magnitude higher than in the less pure material. Very likely this is an effect of co-segregation of non-diffusant impurities into the grain boundaries.     

Modeling of polysilicon diffusion sources during rapid optical annealing

A new model for polysilicon diffusion sources is presented. It considers the following effects: 1) dopant diffusion in grains, in grain boundaries and in the single-crystal silicon substrate, 2) dynamic dopant segregation between grain and grain boundary phases and between the phases of polysilicon and the single-crystal silicon substrate, 3) dynamic dopant activation or clustering in grains and in the single-crystal silicon substrate, 4) dynamic grain growth depending on local grain size and local electron density. These mechanisms with completely different time scales are modeled simultaneously. For the first time this allows the analysis of furnace and rapid optical annealing processes with arbitrary grain growth kinetics even during epitaxial realignment. The advanced model for segregation allows for the effect that dopants in grain boundaries and active dopants in grains as well as in the single-crystal silicon substrate find only a limited number of sites which can be occupied. These limitations are necessary to explain the dopant distributions in polysilicon and in the single-crystal silicon substrate. For the first time the coupling between the concentration of active dopants in grains, between the concentration of dopants in grain boundaries and between the local grain size is shown during doping enhanced grain growth.     

Silicon migration during MBE growth of doped (A1, Ga)As films

Silicon migration during MBE growth of (Al, Ga)As and (Al, Ga)As/GaAs or AlAs/GaAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration-depth profiling. It is found to be concentration dependent, with no preferential migration towards or away from the growth front. At high concentrations, superlattice disordering during growth is observed using photovoltage and transmission electron microscopy (TEM) techniques. On the basis of C-V, SIMS and TEM data we propose that silicon migration occurs as the result of a concentration-dependent diffusion process. This is substantiated by measurements of the two-dimensional electron-gas mobility in selectively doped heterojunctions as a function of growth temperature and silicon concentration.     

Laser annealing of Bi implanted <111> and <100> silicon

The influence of surface orientation in Bi implanted silicon, annealed by Q-switched ruby laser pulse irradiation was investigated. Depth distributions and lattice location of the Bi atoms were obtained using⁴He backscattering and channeling techniques and the electrical behavior studied by sheet resistance measurements. The dopant profiles show partial surface accumulation and in-depth broadening without influence of the substrate orientation. These profiles can be fitted by a numerical calculation based on the normal freezing model with an interfacial segregation coefficient much higher than the equilibrium one. The impurity atoms located in the in-depth profile are shown to be electrically active when their maximum concentration does not exceed 10²⁰ atoms/cm³.     

Surface dynamics and breakdown patterns of a random solid subject to a biased 3D etching

We propose a selective disaggregation model in three dimensions with a mixed Brownian-deterministic motion of the etchant particle driven by a tuning parameter taking into account the presence of an external field. The width of the surface sites in saturation is described by the Edwards-Wilkinson scaling law as in a ballistic selective decay process. Besides, we consider the surfaces resulting when the solid substrate is completely eroded up to the electrical breakdown. In this situation, we analyse the effects of the etchant particle motion on the topology and conductivity of the residual substrate and we compare the relevant patterns with the ones related to the classical percolation theory. These results may interpret some recent experimental findings in electrochemical nanotechnology.     

Influence of electric field on heterogeneous reactions stimulated by laser light

We present experimental data for vanadium and copper oxidation by cw CO₂ laser light in an external electric field. Direct influence of the external field on the crystallisation process has been demonstrated in both vanadium and copper cases; the oxidation rate and surface morphology depend sensitively on the sign and strength of the external field.     

火灾烟雾颗粒凝并分形特性研究

火灾烟雾颗粒因布朗运动由初期的主粒子凝并形成大颗粒的凝团结构，其外形呈现出分形特征，根据分形理论对火灾烟雾颗粒凝团结构进行分析研究，采用场发射扫描电镜对多种材料的烟雾颗粒图像进行测试，通过对烟雾凝团图像进行处理，获得了火灾探测中常见的多种材料的分形维数和分形系数，给出了烟雾颗粒的主粒子粒径，并对其影响因素进行了对比分析，为火灾烟雾探测中颗粒凝并分形特性研究提供有益的探索. 关键词： 火灾 烟雾 颗粒 凝并 分形