Capabilities of Magnetic Pseudoresonance in Studies of Thin Ferromagnetic Films with Uniaxial Magnetic Anisotropy

Technical Physics - Possibilities of magnetic pseudoresonance (a non-resonance peak of magnetic susceptibility) were studied and compared with the ferromagnetic resonance (FMR) in measuring the...     

Two-Magnon Relaxation Processes in Nanocrystalline Thin Magnetic Films

Russian Physics Journal - Numerical analysis of the micromagnetic model was used to reveal the ‘resonance’ feature of relaxation processes in nanocrystalline thin magnetic films. This...     

MnBiAl薄膜的磁光及磁性能研究

用真空电子束蒸发制备了MnBi_xAl_0.15薄膜.当0.4≤x≤0.7时,MnBi_xAl_0.15薄膜的Kerr角与MnBi_x薄膜相比有显著增大;而当x＞0.7时,MnBi_xAl_0.15的Kerr角则比MnBi_x的要不,633nm波长测量时,MnBi_{0.5Al0.15的Kerr角为2.75°,而相对应的MnBi0.5薄膜只有1.56°.MnBi05Al0.15薄膜的室温饱和磁化强度Ms为3×10⁵A/m,比MnBi0.5薄膜的Ms(4×10⁵A/m)要小.推测当0.4≤x≤0.7时,Al可能部分占据Bi空位和部分取代Mn位,由于晶格收缩使得Mn 3d电子与Bi 6p电子的杂化概率增大,从而导致其Kerr效应增强. 关键词：}     

Magnetic Properties of Exchange-Coupled Dual-Layer SmTbCo Thin Films

Exchange-coupled SmTbCo dual-layer media are prepared by an r.f magnetron sputtering system and their magnetic properties are investigated. The prepared SmTbCo dual layer is composed of a 340 emu/cm^3 TM-rich readout layer and a 5.80 kOe RE-rich memory layer, meeting the requirements of high saturation magnetization and large coercivity for hybrid recording. Through exchange coupling, the coercivity of the high-saturation- magnetization SmTbCo layer is greatly enhanced from 1.85 to 5.96 kOe. The calculated interface wall energy for Sm6.65Tb12.35Co81 （20nm）/Sm1.22Tb42.16Co56.62 （20hm） is about 3.85erg/cm62. The reversal magnetization of the SmTbCo exchange-coupling dual-layer films is analysed based on a micro-magnetic model.     

Magnetic Properties of Heisenberg Thin Films in an External Field

The magnetic properties of Heisenberg ferromagnetic films in an external magnetic field are investigated by means of the variational cumulant expansion (VCE). The magnetization can be in principle calculated analytically as the function of the temperature and the number of atomic layers in the film to an arbitrary order of accuracy in the VCE. We calculate the spontaneous magnetization and coercivity to the third order for spin-1/2 Heisenberg films with simple cubic lattices by using a graphic technique.     

Magnetic Properties of Heisenberg Thin Films in an External Field

The magnetic properties of Heisenberg ferromagnetic films in an external magnetic field are investigated by means of the variational cumulant expansion (VCE). The magnetization can be in principle calculated analytically as the function of the temperature and the number of atomic layers in the film to an arbitrary order of accuracy in the VCE. We calculate the spontaneous magnetization and coercivity to the third order for spin-1/2 Heisenberg films with simple cubic lattices by using a graphic technique.     

Co掺杂ZnO薄膜的结构和磁学性能

研究了用单束脉冲激光沉积法制备的Co掺杂ZnO薄膜的结构和磁学性能。XRD表征结果表明制备的薄膜是具有沿c轴择优取向的纤锌矿点阵结构。然而,进一步的高分辨电子显微镜结果显示整个样品上的晶体取向并不完全相同。很难说明形成了单晶。结果分析表明Co占据了部分Zn的格点,并对电子结构产生了影响。室温下观察到了磁滞回线,显示掺杂Co可以实现ZnO的磁性翻转,但磁性比较小。该薄膜与我们以前用双束脉冲激光沉积法制备的Co掺杂ZnO薄膜具有相似的性能,提示我们其内部的机制可能相似。     

Imaging the Magnetic Structure of Thin Films and Nanoparticles

Hyperfine Interactions - Nuclear resonant scattering of synchrotron radiation is applied to investigate the magnetic spin structure of nanoscale systems. The outstanding brilliance of modern...     

Soft Magnetic Thin Films FeCoHfO for High-Frequency Noise Suppression Applications

A series of FeCoHfO films were fabricated by dc magnetron reactive sputtering at varying partial pressure of oxygen （Po2） from 0 to 11.7%, and the electrical and magnetic properties of films have been studied. It is shown that optimal Fe43.29 Co19.51Hf7.49 O29.71 films with desired properties can be obtained when the films were prepared under Po2= 5.1%. The films show superior properties of low coereivity, Hc ∽5.5 Oe, relatively high saturation magnetization, 47rMs · 18.3 kG, high anisotropy field Hk ∽ 65 Oe, and high electrical resistivity ρ∽ 2675 μΩ·cm. Permeability spectra shows that the natural ferromagnetic resonant frequency is as high as 3.1 GHz. The combined merits of the film make the films taken as an ideal candidate material for high-frequency applications such as noise suppressor. In addition, the effects of the film thickness and annealing treatment on the magnetic properties are also reported.     

Determination of Thermal Diffusivity of a Manganite Thin Film

Thermal diffusivity has been investigated in a manganite thin film La0.6Sr0.4MnO3 by means of transient grating （TG） technique at room temperature. A new method, which is generalized to two-layered samples of the thin film deposited on a semi-infinite substrate, is established to fit the TG signals. The thermal diffusivity of the Lao.6Sro.4MnO3 thin film with a thickness of 200nm on an MgO （100） substrate is determined to be 0.92mm^2/s, which is slightly smaller than that of the single crystal sample （1 mm^2/s）.     

Spin-Wave Resonance in Ge : Mn Thin Films with Percolation Magnetic Ordering

The mechanism of excitation and propagation of spin waves in Ge: Mn thin films with different nominal manganese concentrations (2, 4, and 8 at % Mn) with percolation magnetic ordering is explored. Concentration dependencies of Curie temperature T_C(n) and spin wave rigidity D(n) are determined, which enables to find the index of correlation distance. An exotic percolation magnetic state of samples of Ge: Mn thin films is confirmed by rectifying experimental dependences D(n) and D/T_C(n) in coordinates accepted in the percolation theory.     

等离子辅助后处理对锰掺杂氮化钛薄膜磁特性的影响

The ferromagnetic manganese doped TiN films were grown by plasma assisted molecular beam epitaxy on MgO(001) substrates. The nitrogen concentration and the ratio of manganese at Ti lattice sites increase after the plasma annealing post treatment. TiN(002) peak shifts toward low angle direction and TiN(111) peak disappears after the post treatment. The lattice expansion and peak shift are mainly ascribed to the reduction of nitrogen vacancies in films. The magnetism was suppressed in as-prepared sample due to the pinning effect of the nitrogen vacancies at defect sites or interface. The magnetism can be activated by the plasma implantation along with nitrogen vacancies reduce. The decrease of nitrogen vacancies leads to the enhancement of ferromagnetism.     

基底材料对磁控共溅射Al-Cu-Fe薄膜特性的影响

 采用磁控共溅射工艺来制备Al-Cu-Fe薄膜,选用抛光状态的纯Al、纯Cu和不同粗糙度的不锈钢基作为基底材料。通过原子力显微镜分析薄膜的表面形貌,利用扫描电镜能谱仪分析薄膜的元素含量;通过MTS纳米力学综合测试系统分析薄膜的结合强度和摩擦因数。分析结果表明：不锈钢作为基底材料的薄膜与基体的结合强度最大,其次为纯铝和纯铜。纯铜基底薄膜的摩擦因数最大,达到0.17,其余两种薄膜的摩擦因数均不大于0.03。而薄膜表面形貌与基底材料的原始形貌有直接的联系,基底原始粗糙度越小,薄膜的表面组织也越细;基底原始粗糙度越大,薄膜表面形成的晶粒的团聚越明显。     

Structure Constant and Grain Size Determination by Ferromagnetic Resonance in Thin Magnetic Films

Russian Physics Journal - The paper shows that the structure constant and the average crystal grain size of anisotropic nanocrystalline magnetic film can be determined by analyzing the shape of the...     

H掺杂对ZnCoO稀磁半导体薄膜结构及磁性能的影响

利用磁控溅射法,采用亚分子分层掺杂技术交替溅射Co靶和ZnO靶,在Si衬底上制备了不同氢氩流量比的H:ZCO薄膜样品,研究了氢氩流量比对薄膜结构特性和磁学性能的影响。所制备的薄膜样品具有c轴择优取向。由于H对表面和界面处悬挂键的钝化作用,随H₂流量比的增加,薄膜的择优取向变差。磁性测量结果显示,薄膜样品的铁磁性随着氢氩流量比的增大而增强。XPS结果表明,随着H含量的增大,金属态Co团簇的相对含量逐渐增加,而氧化态Co离子的相对含量逐渐减小。H:ZCO样品中的铁磁性可能来源于Co金属团簇,H的掺入促使ZnO中的Co离子还原成Co金属团簇,从而增强了薄膜样品的室温铁磁性。     

Magnetic Properties and Nanostructures of FePtCu：C Thin Films with FePt Underlayers

Magnetic properties and nanostructures of FePtCu：C thin films with FePt underlayers （ULs） are studied. The effect of FePt ULs on the orlentation and magnetic properties of the thin films are investigated by adjusting FePt UL thicknesses from 2nm to 14nm. X-ray diffraction （XRD） scans reveal that the orientation of the films is dependent on FePt UL thickness. For a 5-nm FePtCu：C nanocomposite thin film with a 2-nm FePt UL, the coercivity is 6.S KOe, the correlation length is 59 nm, the desired face-centred-tetragonal （fct） ordered structure [Llo phase] is formed and the c axis normal to the film plane [（001） texture] is obtained. These results indicate that the beffer orientation and magnetic properties of the films can be tuned by decreasing the thockness of the FePt UL.     

Study of Peculiarities of the Microwave Absorption Spectrum of Nanocrystalline Thin Magnetic Films

Russian Physics Journal - Based on the micromagnetic model which takes into account the random distribution of the uniaxial magnetic anisotropy directions in crystallites of a nanocrystalline film,...     

Critical Dynamics in Thin Films

Critical dynamics in film geometry is analyzed within the field-theoretical approach. In particular we consider the case of purely relaxational dynamics (Model A) and Dirichlet boundary conditions, corresponding to the so-called ordinary surface universality class on both confining boundaries. The general scaling properties for the linear response and correlation functions and for dynamic Casimir forces are discussed. Within the Gaussian approximation we determine the analytic expressions for the associated universal scaling functions and study quantitatively in detail their qualitative features as well as their various limiting behaviors close to the bulk critical point. In addition we consider the effects of time-dependent fields on the fluctuation-induced dynamic Casimir force and determine analytically the corresponding universal scaling functions and their asymptotic behaviors for two specific instances of instantaneous perturbations. The universal aspects of nonlinear relaxation from an initially ordered state are also discussed emphasizing the different crossovers occurring during this evolution. The model considered is relevant to the critical dynamics of actual uniaxial ferromagnetic films with symmetry-preserving conditions at the confining surfaces and for Monte Carlo simulations of spin system with Glauber dynamics and free boundary conditions.     

脉冲激光沉积法(PLD)生长Co掺杂ZnO薄膜及其磁学性能

采用脉冲激光沉积(PLD)法在单晶Si(100)及石英衬底上生长Co掺杂ZnO薄膜,并且比较了不同生长条件下薄膜的性能。实验观察到了700℃、0.02Pa氧压气氛下生长的Co掺杂ZnO薄膜显示室温磁滞回线。采用XRD、SEM等手段对Co掺杂ZnO薄膜的晶体结构及微观形貌进行了分析,得到的ZnO薄膜具有高度的c轴择优取向,结构比较致密,表面平整度较高,并且没有发现Co的相关分相,初步表明Co有效地掺入了ZnO的晶格当中。霍尔测试表明Co掺杂ZnO薄膜样品保持了半导体的电学性能,电阻率为0.04Ω·cm左右,载流子浓度约为1018/cm3,迁移率都在18.7cm2/V·s以上。实验结果表明材料保持了ZnO半导体的性能,并具有室温铁磁性。     

Magnetic Properties of Fe/Ni and Fe/Co Multilayer Thin Films

In this work, the magnetic and transport properties of Fe/SiO₂/Ni and Fe/SiO₂/Co multilayers grown on Si/SiO₂ substrates have been studied. The samples have been prepared by two-stage deposition process. In the first stage, Fe layer and SiO₂ interlayer of both samples are grown by ion beam deposition technique at room temperature. Then the samples are taken out to ambient atmosphere and loaded into a pulse laser deposition (PLD) chamber. Prior to the deposition of top layer, the samples are cleaned by annealing at 150 °C. In the second stage, Ni (or Co) layer is prepared by PLD technique at room temperature. The thickness of deposited layers has been measured by Rutherford back scattering (RBS). Magnetic properties of ferromagnetic bilayers have been investigated by room-temperature ferromagnetic resonance (FMR) and vibrating sample magnetometer (VSM) techniques. Standard four-point magneto-transport measurements at various temperatures have been performed. Two-step switching in the in-plane hysteresis loops of Fe/SiO₂/Ni and Fe/SiO₂/Co samples is observed. A crossing in the middle of hysteresis loops of both samples points to a weak antiferromagnetic interaction between the magnetic layers of the stacks. Saturation magnetization values have been obtained from the VSM measurements of samples with DC magnetic field perpendicular to the films surface. Magneto-transport measurements have shown the predominant contribution of anisotropic magnetic resistance both at room and low temperatures. FMR studies of Fe/SiO₂/Ni and Fe/SiO₂/Co samples have revealed additional non-uniform (surface and bulk SWR) modes, which behavior has been explained in the framework of the surface inhomogeneity model. An origin of the antiferromagnetic interaction has been discussed.