Electronic and magnetic properties of silicene nanoflakes by first-principles calculations

The geometric, electronic, and magnetic properties of silicene nanoflakes (SiNFs) and corresponding two-dimensional (2D) framework assembled by SiNFs are studied by first-principles calculations. We find that the hexagonal SiNFs exhibit semiconducting behavior, while the triangular SiNFs is magnetic. Although the triangular SiNFs linked directly is antiferromagnetic, the system linked with an odd-number Si chains can exhibit ferromagnetic (FM) behavior, which is ascribed to anti-parallel spin rule on Si atoms, consistent with the Lieb–Mattis criterion. More interestingly, the 2D framework composed of triangular SiNFs linked by a Si atom shows a half-metallic character with an integer magnetic moment. These results provide a better understanding for silicene-based nanoflakes, and expect to pave an avenue to assemble FM silicon materials in spintronics.     

Co对单层MoS_2电子结构与磁性的影响

为了研究Co对单层MoS_2电子结构和磁性的影响,本文基于第一性原理,采用数值基组的方法计算了Co吸附式掺杂、Co替代式掺杂单层MoS_2的能带结构、态密度以及分析了其结构的稳定性.结果发现:Co替换式掺杂体系的形成能较低,实验上容易实现;Co在Mo位吸附的稳定性强于在S位吸附;Mo位吸附体系的总磁矩为0.999μB,其磁矩的主要来源于Co原子的吸附所贡献的0.984μB,Co原子的掺杂体系总磁矩为1.029μB,其磁矩的主要由Co原子替代掉一个Mo原子所贡献的磁矩为0.9444μB,相比于吸附体系,Co原子对磁矩的贡献率有所降低;无论是Co吸附在单层MoS_2表面还是Co直接替代掉Mo原子的掺杂体系,Co原子3d轨道的引入是引起单层MoS_2体系磁性的主要原因.     

Electronic structure,optical properties,and phonon transport in Janus monolayer PtSSe via first-principles study

Motivated by the synthesis of a Janus monolayer, the new PtSSe transition-metal dichalcogenide (TMD) have attracted remarkable attention due to their characteristic properties. In this work, we calculated the electronic structure, optical properties, and the thermal conductivity of the PtSSe monolayers, and performed a detailed comparison with other TMDs (monolayer PtS₂ and PtSe₂) using first-principles calculations. The calculated band gaps of the PtS₂, PtSSe, and PtSe₂ monolayers were 1.76, 1.38, and 1.21?eV, respectively, which are in good agreement with experimental data. At the same time, we observed a larger spin-orbit splitting in the electronic structure of PtSSe monolayers. The optical properties were also calculated and a significant red shift was observed from the PtS₂ to PtSSe to PtSe₂ monolayers. The lattice thermal conductivity of the PtSSe monolayer at room temperature (36.19?W/mK) is significantly lower than that of the PtS₂ monolayer (54.25?W/mK) and higher than that of the PtSe₂ monolayer (18.07?W/mK). Our results show that the PtSSe monolayer breaks structural symmetry and has the same ability to reduce the thermal conductivity as MoSSe and ZrSSe monolayers due to the shorter group velocity and the lower converged phonon scattering rate. These results may stimulate further studies on the electronic structure, optical properties, and thermal conductivity of the PtSSe monolayer in both experimental synthesis and theoretical efforts.     

Pressure effect of magnetic and electronic properties of Mn2PtGa Heusler alloy

First-principles calculations are performed to investigate pressure effects on structure, magnetism, martensitic phase transition and Curie temperatures of Mn₂PtGa Heusler alloy in framework of the density functional theory. It is shown that Mn₂PtGa prefer to crystallize in the inverse Heusler type structure. Besides, we predict an extraordinary occurrence of pressure induced metallic ferrimagnetism to half-metallic ferromagnetism transition in cubic phase of Mn₂PtGa alloy under hydrostatic pressure up to 43 GPa and the half-metallic ferromagnetism is found to be robust even the lattice further compression to 90 GPa. However, with the pressure up to 100 GPa, the spin-down gap starts to close and the half metallicity begin to disappear, while with the pressure increasing from 100 GPa to 300 GPa, the alloy returns to metallic characteristic. In addition, the energy difference between the austenitic and martensitic phases is found to increase with increasing pressure followed by a decrease when pressure reaches to 43 GPa, which implies a variation trend of martensitic phase transition temperature. Furthermore, Curie temperatures in both austenitic and martensitic phases are estimated under pressure by using the standard mean-field approximation which agrees well with the theoretical results in literature. The robustness of the half metallicity, magnetic transition and the high Curie temperature under pressure make Mn₂PtGa alloy a promising candidate for applications in spintronic devices.     

硼氮掺杂对立方PbTiO3电子结构和光学性质影响的第一性原理研究

钛酸铅(PTO)因具有优异的铁电、压电特性及光学性质而备受关注.但B、N掺杂对顺电相PTO电子结构和光学性质的影响还不明确,因此,利用第一性原理对立方PTO开展准确的性质预测尤为必要.本文采用广义梯度近似的PBE泛函(GGA-PBE)和杂化泛函(HSE06)研究了B、N替位掺杂(B_O、N_O)和O空位(V_O)对PTO的基态性质、电子结构和光学性质的影响.研究表明：贫氧态的PTO比富氧态更容易形成杂质缺陷,且N_O缺陷最难形成.当B_O、N_O缺陷存在时,PTO的价带顶和导带底向低能量方向移动,在两者之间出现杂质能级,使其导电性能提高且含B_O的PTO为间接带隙半导体,而含N_O的PTO为直接带隙半导体. N_O体系在波长大约为230 nm处有最大吸收峰,该峰主要源于O 2p和Ti 3d之间的电子跃迁,且N_O体系对可见光的吸收能力最强,有望提高PTO的光催化能力.     

A first-principles insight into Pd-doped MoSe2 monolayer: A toxic gas scavenger

Using first-principles theory, we investigate the Pd-doping effect on the geometric and electronic behaviors of MoSe₂ monolayer, and the adsorption behavior of Pd-MoSe₂ monolayer upon four toxic gases, namely NO, NO₂ SO₂ and H₂S. Desorption property of Pd-MoSe₂ monolayer upon four gases at diverse temperatures is analyzed as well to help explore its potential application. For Pd dopant adsorption onto MoSe₂ monolayer, somewhat n-type doping is determined, which accounts for the increased conductivity for intrinsic MoSe₂ monolayer. The strong adsorption ability and poor desorption performance of Pd-MoSe₂ monolayer upon four gases indicate its large potential as gas scavenger to remove these toxic gases from their surroundings. Moreover, it could be explored as a gas sensor for detection of NO, NO₂ and H₂S as well, given the obvious change in conductivity after gas adsorption based on band structure analysis. Our calculations would be beneficial to understand the TM doping effect on intrinsic MoSe₂ monolayer and to provide a first insight into the potential application as gas sensor or sweeper for Pd-MoSe₂ monolayer.     

Electronic and magnetic behaviors of graphene with 5d series transition metal atom substitutions: A first-principles study

The electronic structures and magnetic behaviors of graphene with 5d series transition metal atom substitutions are investigated by performing first-principles calculations. All the impurities are tightly bonded to single vacancy in a graphene sheet. The substitutions of La and Ta lead to Fermi level shifting to valence and conduction band, respectively. Both the two substitutions result in metallic properties. Moreover, the Hf, Os and Pt-substituted systems exhibit semiconductor properties, while the Re and Ir-substituted ones exhibit robust half-metallic properties. Interestingly, W-substituted system shows dilute magnetic semiconductor property. On the other hand, the substitution of Ta, W, Re and Ir induce 0.86 μ_B, 2 μ_B, 1 μ_B and 0.99 μ_B magnetic moment, respectively. Our studies demonstrate that the 5d series transition metal substituted graphene have potential applications in nanoelectronics, spintronics and magnetic storage devices.     

二维VOBr2单层的结构畸变及其磁性和铁电性

借助第一性原理计算,对VOBr₂单层的结构、磁性以及铁电性进行了系统研究.计算结果表明低温下VOBr₂会产生自发铁电极化,从高对称顺电相转变为铁电相结构.与同族姊妹材料VOI₂不同的是,V的二聚化现象不仅无法在VOBr₂中稳定存在,还会导致局域磁_矩淬灭.此外,VOBr₂易磁化轴在面内a轴方向,面内a,b轴上近邻磁矩均为反铁磁耦合.VOBr₂中的铁电极化主要由V在a轴方向V—O—V链上的铁电位移产生,大小约为40μC/cm~2.与铁电同步翻转相比,通过分步翻转不同链上的铁电极化,可以有效降低铁电翻转能垒,从而有望通过低能外场实现部分或个别链上的铁电翻转,为低能耗高密度铁电存储器件设计提供新的思路和方向.     

高压下KMgF_3晶体光学性质的第一性原理研究

本文采用第一性原理的方法,在100 GPa的压力范围内,计算了KMgF_3的理想晶体和含空位缺陷晶体的光学性质.吸收谱数据表明,在100 GPa范围内,压力因素不会导致KMgF_3晶体在可见光区有光吸收行为.钾、镁和氟空位缺陷的存在会使得KMgF_3晶体的吸收边红移(其中氟空位缺陷引起的红移最显著),但这些红移不会导致它在可见光区出现光吸收的现象.能量损失谱数据显示,压力因素不仅会使得KMgF_3晶体的能量损失谱有蓝移的行为,而且还会引起它的较强谱峰个数发生变化.在100 GPa处的缺陷晶体数据指明,氟空位缺陷会导致其能量损失谱的两个较强谱峰的峰值强度明显降低.分析表明,KMgF_3晶体有成为冲击窗口材料的可能,并且本文所获得的结果对未来的实验探究有参考作用.     

高压下BaLiF3晶体光学性质的第一性原理研究

本文采用第一性原理方法, 在190 GPa的压力范围内, 计算了BaLiF3理想晶体和含空位点缺陷晶体的光学性质. 吸收谱数据表明, 压力因素不会导致BaLiF3晶体在可见光区有光吸收的行为. 空位点缺陷的存在会使得BaLiF3的吸收边红移(其中氟空位点缺陷引起的红移最显著) , 但这些红移不会导致它在可见光区内出现光吸收的现象. 波长在532 nm处的折射率数据显示, BaLiF3的折射率将随压力升高而增大. 氟空位点缺陷将导致BaLiF3的折射率增大, 但钡空位点缺陷和锂空位点缺陷的存在对其基本没有影响. 本文预测, BaLiF3晶体有成为冲击光学窗口材料的可能.     

Electronic structures,magnetic properties and band alignments of 3d transition metal atoms doped monolayer MoS2

Utilizing first-principles calculations, the electronic structures, magnetic properties and band alignments of monolayer MoS₂ doped by 3d transition metal atoms have been investigated. It is found that in V, Cr, Mn, Fe-doped monolayers, the nearest neighboring S atoms (S_NN) are antiferromagnetically polarized with the doped atoms. While in Co, Ni, Cu, Zn-doped systems, the S_NN are ferromagnetically coupled with the doped atoms. Moreover, the nearest neighboring Mo atoms also demonstrate spin polarization. Compared with pristine monolayer MoS₂, little change is found for the band edges' positions in the doped systems. The Fermi level is located in the spin-polarized impurity bands, implying a half-metallic state. These results provide fundamental insights for doped monolayer MoS₂ applying in spintronic, optoelectronic and electronic devices.     

碳掺杂BaTiO3的电子结构和磁性研究

基于密度泛函理论,从头计算了C间隙和替位氧掺杂立方结构BaTiO3的电子结构和磁学性质．结果表明C掺杂BaTiO3在自旋极化状态下的总能量比自旋非极化状态下的总能量小,说明C掺杂BaTiO3的基态具有铁磁性．从态密度和自旋电子密度分布可知,C位于BaTiO3间隙的磁性机理和过渡金属掺杂半导体产生磁性的机理类似：C替位掺杂BaTiO3体系磁性源于未配对的C2p电子．     

单层MoS_2表面吸附Ag_6团簇电子结构的第一性原理计算

本文运用第一性原理研究了单层MoS_2在S位吸附Ag_6团簇的稳定性、能带结构和态密度.结果表明,Ag_6团簇在S位单点位吸附的稳定性强于双点位吸附、三点位吸附;其中吸附体系禁带中产生了2条杂质能级,原因在于Ag原子与S形成共价键下的施主能级与受主能级;Ag_6团簇在单层MoS_2的吸附导致态密度峰值在费米能级处发生劈裂,说明Ag_6团簇的吸附会增强单层MoS_2的光电特性;单层MoS_2的能带结构可以通过表面吸附Ag_6团簇以及金属团簇进行调控;在实际的生产应用中依据不同的金属团簇吸附于单层MoS_2表面得到需要的的半导体器件.     

Hydrogen bonding involved with superhalogen MX2NY: its influence on the structure and stability of the superhalogen

The hydrogen-bonded complexes formed of superhalogen MX₂NY (M?=?Li, Na; N?=?Be, Mg; X, Y?=?F, Cl, Br) and hydrogen fluoride have been investigated with quantum chemical calculations at the MP2/aug-cc-pVDZ and M06-2X/aug-cc-pVDZ levels of theory. It was shown that the M06-2X method presents similar results with the MP2 method. The strength of hydrogen bonding is related with the nature of metal and halogen atoms. The metal with greater electron-donating ability leads to a stronger hydrogen bond, whereas the halogen with bigger electron-withdrawing ability also results in the stronger hydrogen bond. The presence of hydrogen bond has a small effect on the structures of the superhalogen and contributes to the stability of the superhalogen.     

Electronic structures and magnetic properties of Zn-and Cd-doped AlN nanosheets:A first-principles study

In this paper, the magnetic properties, electronic structures and the stabilities of Zn/Cd incorporated two-dimensional Al N nanosheets are investigated by the first-principles method. Numerical results indicate that Zn and Cd substituting Al atom in Al N nanosheets introduce some holes into the 2p orbitals of the N atoms, and the holes mainly come from spindown 2p orbitals of the N atoms. The magnetic moment of 1.0 μBis produced by Zn/Cd doping Al N nanosheets, and the main component of the magnetic moment of the system is contributed by the partially filled 2p states of the N atoms around the dopant. In particular, when Zn/Cd substituting Al atoms, the magnetic coupling is found to be ferromagnetic. We attribute the hole-mediated p–d interaction to the created ferromagnetic coupling. More importantly, the result of formation energy indicates that Al atom is more inclined to be replaced by Zn atom rather than Cd. This finding is beneficial to developing the spin electronic devices.     

Vibrational and dielectric properties of magnesium aluminate spinel: A first-principles study

The vibrational and dielectric properties of MgAl₂O₄ are investigated within the framework of density functional perturbation theory. Results of phonon frequencies at the Brillouin zone center, static dielectric constant, and electronic dielectric constant are reported. In comparison with experimental results, we find that the generalized gradient approximation potential results in more accurate phonon frequencies than local density approximation potential does. Dielectric, refractive index, extinction coefficient and infrared reflectance spectra of MgAl₂O₄ are given, and the figures suggest that MgAl₂O₄ presents good transmission properties in the spectrum range above 1000 cm−1 and below 300 cm−1.     

Vanadium sulfide nanoribbons: Electronic and magnetic properties

We report the structural, electronic and magnetic properties of zigzag-type 2H-VS₂ nanoribbons based on the first-principles calculations. Our results suggest that the zigzag-type 2H-VS₂ nanoribbons are intrinsic ferromagnetic or ferrimagnetic materials dependent on their edge structures. The S-terminated VS₂ nanoribbons with or without hydrogen saturation at the edges are ferromagnetic, whereas V-terminated VS₂ nanoribbons are ferrimagnetic at their ground states. The average magnetic moment per V atom of VS₂ nanoribbons increases monotonously with their width, but still smaller than that of perfect VS₂ monolayer. These results imply the great potential of VS₂ nanoribbons in spintronics application.     

Effects of enhanced electronic correlation on magnetic properties of light non-metallic element (B,C, N,and O)-doped CuCl: A first-principles study

Based on density functional calculations within both standard generalized gradient approximation and plus on-site Coulomb interactions approaches, we have investigated the electronic structure and magnetic properties of the first-row element-doped CuCl semiconductors. The electronic correlations in both 2p and 3d orbitals are enhanced by adding the on-site Coulomb repulsion (Hubbard U and Hund exchange J). After a comparative study, we find that, for both standard and beyond approaches, B-doped CuCl is a half-metallic magnet with majority-spin impurity bands touching the Fermi level, C-doped CuCl is a magnetic semiconductor, and N-doped CuCl is a half-metallic magnet with minority-spin impurity bands crossing the Fermi level. Nevertheless, for O-doped CuCl, it transforms from a nonmagnetic semiconductor to a half-metallic magnet with metallic up-spins by considering the correlation effects. The calculation shows that the enhanced electronic correlation not only corrects the error of band-gap, but also influences the magnetic ground state and the distribution of local magnetic moments. The location of impurity bands with different dopants was understood based on the elements' electronegativity and interaction between dopant and host atoms. Strong hybridization between the dopant's 2p states and the filled 3d orbitals of adjacent Cu yields the main contribution to magnetization.