Thermal Diffusivity of Film/Substrate Structures Characterized by Transient Thermal Grating Method

Transient thermal grating method is used to measure the thermal diffusivity of absorbing films deposited on transparent substrates. According to periodically modulated dielectric constant variations and thermoelastic deformations of the thin films caused by the transient thermal gratings, an improved optical diffraction theory is presented. In the experiment, the probing laser beam reflectively diffracted by the thermal grating is measured by a photomultiplier at different grating fringe spaces. The thermal diffusivity of the film can be evaluated by fitting the theoretical calculations of diffraction signals to the experimental measured data. The validity of the method is tested by measuring the thermal diffusivities of absorbing ZnO films deposited on glass substrates.     

Thermal conductivity and interface thermal resistance of Si film on Si substrate determined by photothermal displacement interferometry

An in situ, noncontact, photothermal displacement interferometer for performing thermal diffusivity measurements on bulk and thin-film materials has been developed. Localized transient surface motion is generated through photothermoelastic coupling of a pulsed, heating laser beam to the sample under investigation. The maximum surface displacement is found to be linearly dependent on the laser power while the proportionality is a function of the thermal diffusivity. Both thin-film conductivity and film/substrate interface thermal resistance are derived from the measured, effective thermal conductivity by employing simple heat-flow analysis. Wedge-shaped Si films, vacuum deposited on single crystal Si wafers are studied with this technique. A sample with oxide layer removed by ion bombardment of the wafer surface prior to film deposition shows the same film conductivity as a sample film deposited on an as-cast wafer, while the uncleaned sample exhibits higher interface thermal resistance. It is found that the thin-film thermal conductivity is somewhat smaller than the bulk value. However, the existence of an interface thermal resistance, when combined with film thermal conductivity, can result in an effective thermal conductivity as low as two orders of magnitude lower than the bulk value.Currently supported by the LLE fellowship     

Study of the Thermal Diffusivity of Optical Coating by Photo－thermal Deformation Technique

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多层薄膜瞬态热弹反射光栅实验及其理论分析和有限元数值计算

多层薄膜/基片材料的热学性质受各层薄膜及基片的共同影响,因此同时评估各层材料的热学性质是非常重要的。激光诱导瞬态热栅技术是一种研究材料表面及亚表面光声光热现象有效的方法,因此可用于研究多层材料的热学性质。本文利用瞬态热弹反射光栅方法研究多层薄膜/基片结构材料的热扩散率,首先对Al/ZnO/Si基片结构的多层材料进行激光诱导瞬态热栅的光衍射检测实验,然后通过对该瞬态热栅的光衍射强度信号进行理论分析及有限元数值模拟,得到Al/ZnO/Si各层热扩散率对其表面温度场分布的影响,进而计算铝膜和氧化锌膜热扩散率对瞬态热栅引起衍射光信号的贡献。最后将理论分析与实验结果进行多参数拟合,在基片的参量已知的情况下,可同时得到铝膜和氧化锌膜的热扩散率。     

Thermal properties of 15-mol% gadolinia doped ceria thin films prepared by pulsed laser ablation

Thermal properties of 15-mol% gadolinia doped ceria thin films (Ce_0.85Gd_0.15 O_1.925) prepared by pulsed laser ablation on silicon substrates in the temperature range 473–973 K are presented. Thermal diffusivities and thermal conductivities were evaluated using photoacoustic spectroscopy. The influence of grain size on thermal properties of the films as a function of deposition temperature is studied. It is observed that the thermal diffusivity and the conductivity of these films decreases up to 873 K and then increases with substrate temperatures. The thermal properties obtained in these films are discussed on the basis of influence of grain size on phonon scattering.     

Influence of thickness and crystalline structure on thermal and optical properties of ZnO thin films

Measurements of the temperature dependence of refractive index of ZnO thin films and thermal diffusivity using photothermal deflection technique are presented. Thin film thickness and surface homogeneity were found to be the effective parameters on optical and thermal properties of the thin films. High refractive index gradient with temperature was found for films of a nonuniform distribution and gathered in clusters, and a high predicted value for thermal diffusivity. Optical properties of the thin films revealed that films with disorder in the deposition and gathered clusters showed poor transmittance in visible region with a pronounced peak in the near IR, and also a reduction in the band gap. A detailed parametric analysis using analytical solution of one-dimensional heat equation had been performed. A discontinuity in the temperature elevation at the ZnO-glass interface was found.     

Thermoelastic behavior of a thermoelectric thin-film attached to an infinite elastic substrate

Abstract

This paper examines the thermoelectric behaviour of a thermoelectric thin film bonded to an elastic substrate. A calculation model for thermoelectric thin films is developed based on the singular integral equation method. The interface shear stress is found to exhibit singular behaviour at the ends of the films. Numerical results for the thermal stress distribution in the film and the film/substrate interface are obtained. Effects of film thickness and the substrate to film stiffness ratio on the stress of the film and the stress intensity factor of the interface are identified. The effects of interface electricity conductivity and the elastic–plastic deformation of the film are discussed.     

Stability of thermoresponsive methylcellulose thin film: x‐ray reflectivity study

Methylcellulose (MC), a thermoreversible polymer, was fabricated as thin films into silicon substrates and characterized by x‐ray reflectivity (XRR) measurements for its stability with time and heating. XRR data from the as‐is thin films showed good agreement with the single‐layer model on top of a substrate from Parratt's formalism. Data fitting showed that the density of the thin films is slightly higher than the reported value by manufacturers. Interface roughness values indicate good wetting of the polymer onto the substrate. Heating the thin films at the phase transition temperatures and quenching them to room temperature showed no significant changes in the thin film parameters before and after heating. This showed the thermal stability and/or thermoreversibility of the film. Diffuse scattering measurements also showed no significant changes in the lateral structure of the film with heating and quenching. XRR measurements done on fabricated thin films stored for a month showed a slight increase in the film thickness which could be due to the hygroscopic nature of the polymer. Vacuum heating of the stored thin films at 100 °C for 1 h slightly decreased the thickness, but it has been found that other parameters such as density and surface/interface roughness show good thermal stability. Copyright © 2009 John Wiley & Sons, Ltd.     

Studies on interdiffusion in Pd/Mg/Si films: Towards improved cyclic stability in hydrogen storage

The paper reports the diffusion coefficients of grain boundary diffusion and grain boundary assisted lattice diffusion of Pd in Mg in Pd/Mg/Si system, a useful material for hydrogen storage, at 473 K in vacuum. The grain boundary diffusivity is measured by Whipple model and grain boundary assisted lattice diffusivity by plateau rise method using Pd depth profiles constructed by Rutherford backscattering spectrometry. It is established that grain boundary diffusivities are about six orders of magnitude faster than lattice diffusivities. Fine grained microstructure of Pd film, high abundance of defects in Mg film and higher stability associated with Pd-Mg intermetallics are responsible for the diffusion of Pd into grain boundaries and subsequently in the interiors of Mg. Besides the indiffusion of Pd, annealing also brings about an outdiffusion of Mg into Pd film. Examination by nuclear reaction analysis involving ²⁴Mg(p,p′γ)²⁴Mg resonance reaction shows the occurrence of Mg outdiffusion. Minimization of surface energy is presumably the driving force of the process. In addition to Pd/Mg interface, diffusion occurs across Mg/Si (substrate) interface as well on increasing the annealing temperature above 473 K. These studies show that dehydrogenation of films accomplished by vacuum annealing should be limited to temperatures less than 473 K to minimize the loss of surface Pd, the catalyst of the hydrogen absorption-desorption process and Mg, the hydrogen storing element, by way of interfacial reactions.     

Thermal diffusivity measurement of thermally conducting films on insulating substrates

We report thermal diffusivity measurements of thin Niobium films on glass substrates, using OptoThermal Transient Emission Radiometry (OTTER). The result is a thermal diffusivity value ofD=(2.79±0.36)×10^–5 m²/s, which is within 17% of the accepted value for multicrystaline bulk niobium. The technique is remote sensing, non-destructive, and the measurements depend only on the thickness of the film and the thermal properties of the substrate.     

Thermal characterization of dielectric thin films using an improved genetic algorithm

This paper presents theoretical and experimental investigations of the thermal conductivity and the contact resistance of dielectric materials deposited as thin films. Silicon dioxide and poly(p-phenylene) films deposited on alumina substrates are studied in order to determine simultaneously the thermal conductivity of the film and the resistance of the contact between the film and the substrate. Measurements are obtained by using a photothermal technique, and an improved genetic algorithm (GA), especially suitable for thermal characterizations of thin film structures in the sub-micron range. A theoretical study for evaluating the optimal conditions for the photothermal measurements is presented. This is done by studying the sensitivity of the unknown parameters to the thin film thickness and to the properties of the materials. As the photothermal analysis is basically performed in unsteady state conditions, this study highlights the relation between the intrinsic and effective conductivity of the materials.     

Noncontact measurement of the thermal diffusivity of IR semi-transparent and semiconducting n-CdMgSe mixed crystals by means of the photothermal radiometry

In this paper we present results of noncontact measurements of the thermal diffusivity of infrared semi-transparent n-CdMgSe mixed semiconductor crystals by means of the photothermal radiometry (PTR) in a transmission configuration. In order to overcome an influence of the infrared semi-transparency and plasma waves on the PTR signal from n-CdMgSe mixed crystals the samples were covered by thin aluminum foils on both sides. The thermal diffusivities of n-CdMgSe mixed crystals were estimated from PTR phase frequency characteristics using a well-known formula. It was found that the obtained results are underestimated in comparison to thermal diffusivities estimated from the PPE (photopyro-electric) measurements. A three layer model of a PTR signal was applied in order to estimate an error in determination of the thermal diffusivity of a sample caused by aluminum foils.     

An analytical model for thermal diffusivity measurements of film substrate composite using the mirage technique

The thermal diffusivity h of a thin film on a substrate is measured by using the mirage technique. The photothermal deflection of the probe beam is caused by the heat field and the substrate, heated by the pump beam. From the experimental data a two-dimensional algorithm is proposed to obtain the measurements of the diffusivity of film and substrate in one set of mirage detection.     

射频溅射功率对AZO薄膜结构及光电特性和热稳定性的影响

采用射频磁控溅射法,在玻璃基片上制备了ZnO:Al(AZO)透明导电薄膜。用X射线衍射(XRD)仪、紫外-可见分光光度计、方块电阻测试仪和台阶仪对不同溅射功率下Al掺杂ZnO薄膜的结晶、光学、电学性能、沉积速率以及热稳定性进行了研究。研究结果表明:不同溅射功率下沉积的AZO薄膜具有六角纤锌矿结构,均呈c轴择优取向;(002)衍射峰强和薄膜的结晶度随溅射功率的提高逐渐增强;随溅射功率的提高,AZO薄膜的透射率有所下降,但在可见光(380～780nm)范围内平均透射率仍80%;薄膜的方块电阻随溅射功率的增加逐渐减小;功率为160～200W时,薄膜的热稳定性最好,升温前后方块电阻变化率为13%。     

Elastic modulus and in-plane thermal diffusivity measurements in thin polyimide films using symmetry-selective real-time impulsive stimulated thermal scattering

We describe a technique for extending the utility of the real-time Impulsive Stimulated Thermal Scattering (ISTS) method for thin film characterization. Using weakly absorbed excitation pulses, we show how to selectively drive acoustic waveguide modes that are unobservable when strongly absorbed pulses are used. The ability to excite and monitor these modes is important because it allows for a significant increase in the experimental sensitivity to the film longitudinal velocity. This arrangement also greatly simplifies determination of the in-plane thermal diffusivity. The technique is illustrated through study of unsupported polyimide films with six different thicknesses.     

Transient thermal characterization of micro/submicroscale polyacrylonitrile wires

In this work, the thermal diffusivity of single polyacrylonitrile (PAN) wires with diameters from 4.62 μm down to 324 nm is measured by using our recently developed transient electro-thermal technique. The wires span from 23 μm to 126.2 μm in our measurement. Since PAN wires are dielectric, a thin Au film is coated on the surface of the wires to make them conductive. In the experiment, a step current (with ∼2 μs rising time) is fed to the sample. The sample is heated and takes a certain time to reach its steady thermal state. The temperature rising response of the sample is sensed by measuring the resistance change of the thin Au coating. From the average temperature evolution of the sample, the thermal diffusivity can be extracted. Three PAN wires with different diameters are synthesized using the electro-spinning technique and are measured to obtain their thermal diffusivities (around 1.53×10^-7 m²/s), which are slightly smaller than the bulk value. PACS 65.80.+n; 66.30.Xj; 44.10.+i     

Heat treatment-induced bond layer diffusion and re-crystallization in copper carbon interface systems measured by modulated IR radiometry

Copper-carbon interface systems with additional Mo bond layers in the range of 25 nm to 200 nm have been analyzed with respect to their effective thermal depth profiles before and after heat treatment using modulated IR radiometry. Comparing the inverse calibrated modulated IR phase lags before and after heat treatment, several effects can be identified: – (1) The effusivity of the interface layer, which – due the contact resistance between the two elements copper and carbon – is rather low before heat treatment, increases considerably with heat treatment. – (2) This effect is accompanied by an increase of the thermal diffusion time of the interface layer, relying on the diffusion of Mo and Cu particles. – (3) The sputter-deposited copper films, which before heat treatment can be characterized as effective multi-layer structures, re-crystallize with heat treatment and show modulated IR phases, which are characteristic for thermally homogeneous thin films. – (4) The thermal diffusion times of the Cu films decrease considerably with heat treatment due to increased thermal diffusivities, and – (5) the thermal effusivities of the Cu films increase with heat treatment.     

Photothermal investigation Study of ZnO thin films: effects of Zn and O polar substrate

ZnO thin films were grown by metal-organic chemical vapor deposition on Zn- and O-polar surfaces of ZnO substrate. The effect of Zn- and O-polar substrate on the surface morphology and opto-thermal proprieties has been studied. Hall-measurements were used to determine the carrier concentration of the deposited films. Photothermal deflection spectroscopy (PDS) was used to determine the optical absorption spectrum and the gap energy by comparing experimental amplitude of the photothermal signal to the corresponding theoretical one. Thermal conductivity and diffusivity were also deduced from the photothermal deflection measurements. The found values were very low due to the thermal resistivity of the layer–substrate interface.     

基底对光学薄膜弱吸收测量的影响

 对表面热透镜技术测量光学薄膜弱吸收低频调制时不同基底对测量的影响进行了理论分析。用Lambda—900分光光度计测量了K9和石英基底的Ti₃O₅单层膜的吸收值,将该组样品作为定标片;用表面热透镜装置分别测量了BK7和石英空白基底及HfO₂,ZnO两组不同基底不同厚度单层膜样品的吸收。通过分析比较同一工艺条件下镀制的不同基底薄膜样品用与其同种和不同种基底定标片定标测量的结果,表明在低频测量时需要用与测量样品同种基底的定标片定标;不同厚度样品的测量结果表明,在不能严格满足热薄条件时,测量结果需引入修正值。     

基底对光学薄膜弱吸收测量的影响

对表面热透镜技术测量光学薄膜弱吸收低频调制时不同基底对测量的影响进行了理论分析。用Lambda—900分光光度计测量了K9和石英基底的Ti3O5单层膜的吸收值,将该组样品作为定标片;用表面热透镜装置分别测量了BK7和石英空白基底及HfO2,ZnO两组不同基底不同厚度单层膜样品的吸收。通过分析比较同一工艺条件下镀制的不同基底薄膜样品用与其同种和不同种基底定标片定标测量的结果,表明在低频测量时需要用与测量样品同种基底的定标片定标;不同厚度样品的测量结果表明,在不能严格满足热薄条件时,测量结果需引入修正值。