Corner hole adatom stacking fault structure of Bi on Au(1 1 1)

The surface atomic structure of Bi on Au(1 1 1) is studied with scanning tunneling microscopy. At about 0.5 monolayer of Bi, a well-ordered 6 × 6 atomic structure is observed. The structure has three notable features: corner holes, Bi adatoms, and stacking faults, very similar to a semiconductor surface of Si(1 1 1)-7 × 7. Out of 18 Bi surface atoms in a unit cell, six atoms are at hollow sites and are adatoms, and another six atoms are near-bridge sites. The last six atoms surround corner holes and are lower than other surface atoms by about 0.2 Å. A possible atomic model is proposed based on our observation.     

An STM study of the Si(0 0 1) (2 × 7)-Gd, Dy surface

Both Gd and Dy induce two different reconstructions of the Si(0 0 1) surface with 2 × 4 and 2 × 7 unit cells. Detailed examination by scanning tunneling microscopy shows that the structure of both phases is essentially the same for both metals. Furthermore, the 2 × 7 unit cell contains structural subunits that are the same as the 2 × 4 structure. The similarities and differences between the two superstructures induced by the two metals are discussed.     

Atomic and electronic structure of Sr/Si(0 0 1)-(2 × 2)

The adsorption of Sr on the Si(0 0 1) surface with the semiantiphase dimer (2 × 2) reconstruction is studied, based upon the ab initio pseudopotential calculations. It is calculated that the semiantiphase dimer (2 × 2) reconstruction (2 dimers per unit cell) is more favorable than the (2 × 1) phase (1 dimer per unit cell) by an energy of about 0.24 eV/dimer. Considering the energetically more stable reconstruction, we have assumed four possible locations for 1/4 monolayer (ML) Sr adsorption on this surface: (i) bridge, (ii) cave, (iii) pedestal, and (iv) valley-bridge. We find that Sr adsorption on the valley-bridge site is energetically more favorable than all other cases studied here. Interestingly, one of the dimers becomes symmetric, but the other one is still asymmetric with the buckling angle reduced from 18° to 14°, when compared with the clean Si(0 0 1)-(2 × 2) surface. The calculated bond length between Sr and Si in the case of valley-bridge adsorption site is 3.05 Å, and in good agreement with other theoretical calculations. We also present and compare the electronic band structures for the clean and covered surfaces as well as the corresponding charge density plots.     

Study of all-fiber flat-top passband interleaver based on 2 × 2 and 3 × 3 fiber couplers

An all-fiber interleaver of cascaded Mach-Zehnder interferometer (CMZI) using a 2 × 2 and three 3 × 3 fiber couplers with almost rectangular wavelength response is developed by using a new configuration. Based on the digital approximation method of Fourier series, the relationships among the coupling ratios of the couplers, the length difference of interference arms and the intensity transmission spectrum are analyzed. The results indicate that a uniform flat-top spectral response can be obtained by the configuration when the length difference of interference arms and the coupling coefficient of the couplers, with some certain values, are given. The passband and stopband of optical interleaver are improved remarkably. Compared with conventional CMZI using 2 × 2 fiber couplers, the most advantage of the present method is that the coupling ratio of couplers can be controlled accurately because the interference effect of the monitor light can be sheered away in the course of fabricating couplers. A novel structure of filter is fabricated by using the fused biconical taper technics in experiment. The experiment results are in good agreement with the analytical ones.     

Loss-reduced highly birefringent selectively liquid-filled photonic crystal fibers

We have theoretically investigated the birefringence and loss properties of the selectively liquid-filled photonic crystal fibers with the liquid asymmetrically infiltrated into one-line air holes along x-axis. A high birefringence value B = 1.74 × 10⁻³ can be achieved at λ = 1.55 μm. By varying the index of the infiltrating liquid, the birefringence values are shown to be well tuned. In addition, the confinement losses can be efficiently reduced by diminishing the number of liquid holes, which is quite useful for optical devices.     

First-principles study of oxidized Nb(1 0 0) surface structures

The atomic positions of the oxygen-induced c(2 × 2)-O, (3 × 1)-O and (4 × 1)-O surface structures on Nb(1 0 0) are determined by first-principles electronic structure calculations within the density functional theory comparing experimentally observed scanning tunneling microscopy (STM) images. STM images of these surfaces are calculated on the basis of the theory of Tersoff and Hamann. The theoretical and experimental STM images of the oxygen-chemisorbed c(2 × 2)-O structural model agree well. However, only the oxide-covered (3 × 1)-O and (4 × 1)-O structural models with two layers of NbO and contraction of the unit length along longitudinal 〈1 0 0〉 direction by 10% result in the theoretical STM images that agree with the experimental ones.     

A valence band photoemission study of Pb adsorption on Rh(1 0 0) and Rh(1 1 0)

We have studied the adsorption of Pb on the Rh(1 0 0) and (1 1 0) surfaces by photoemission and low energy electron diffraction (LEED), and tested the chemical properties by adsorption of CO. Pb forms two distinct c(2 × 2) phases on Rh(1 0 0), according to the temperature of the substrate. The phase formed below about 570-620 K, denoted α-c(2 × 2), reduces the coverage of adsorbed CO but does not affect the valence band spectrum of the molecule. The phase formed above this temperature, denoted β-c(2 × 2), also reduces the coverage of adsorbed CO but the valence band spectrum of the adsorbed CO is strongly affected. The two phases are also characterised by a slightly different binding energy of the Pb 5d_5/2 level, 17.54 eV for the α phase and 17.70 for the β phase. The Pb/Rh(1 1 0) surface shows two ordered Pb induced phases, c(2 × 2) and p(3 × 1). CO adsorbs on the first with reduced heat of adsorption and with a valence band spectrum that is strongly altered with respect to CO adsorbed on clean Rh(1 1 0), but does not adsorb on the p(3 × 1) structure at 300 K. We compare the present results with previous results from related systems.     

Investigation of hydrogen interaction with the Si(1 1 1)-7 × 7 surface by STM with Bi/W tips

The STM technique with a special Bi/W tip was used to study the interaction of hydrogen atoms with the Si(1 1 1)-7 × 7 surface. The reactivity of different room temperature (RT) adsorption sites, such as adatoms (A), rest atoms (R), and corner holes (CH) was investigated. The reactivity of CH sites was found to be ∼2 times less than that of R and A sites. At temperatures higher than RT, hydrogen atoms rearrange among A, R, and CH sites, with increased occupation of R sites (T <  300 °C). Further temperature increase leads to hydrogen desorption, where its surface diffusion plays an active role. We discuss one of the possible desorption mechanisms, with the corner holes surrounded by a high potential barrier. Hydrogen atoms have a higher probability to overcome the desorption barrier rather than diffuse either into or out of the corner hole. The desorption temperature of hydrogen from CH, R, and A sites is about the same, equal to ∼500 °C. Also it is shown that hydrogen adsorption on the CH site causes slight electric charge redistribution over neighbouring adatoms, namely, increases the occupation of electronic states on A sites in the unfaulted halves of the Si(1 1 1)-7 × 7 unit cell. Based on these findings, the indirect method of investigation with conventional W tips was suggested for adsorbate interaction with CH sites.     

Photocarrier transport in iron-doped potassium lithium tantalate niobate studied by time-of-flight measurement

The photocarrier mobility of Fe 0.03 wt%-doped potassium lithium tantalate niobate (K_0.95Li_0.05Ta_0.61Nb_0.39O₃) was investigated by time-of-flight (TOF) measurement. The longitudinal photocarrier response due to pulsed excitation leads to values of the drift mobility of μ_h = 1.45 × 10⁻² cm²/V s for holes, μ_e = 0.325 × 10⁻² cm²/V s for electrons, and a value for the range of holes (μτ)_h = 4.38 × 10⁻⁵ cm²/V at room temperature and at low field 3 KV/cm. The response time of holes and electrons (or the relaxation time) is determined to be 3.02 × 10⁻³ s and 3.74 × 10⁻³ s, respectively. The mobility of holes strongly depends on the field strength, and is observed to decrease with increasing bias field.     

Ultrahigh-Q of the L3 photonic crystal microcavity

In this paper, we theoretically investigate the L3 cavity with three missing holes in the center. They are of great interest for the realization of low threshold laser nanosources and for a strong interaction between the cavity and sources. In order to improve the transmission and Q factor simultaneously of these structure, by reducing unwanted reflection due to mismatch and through minimization of propagation losses, we modified L3 geometry: three missing holes in a line where both lateral displacement of the first hole adjacent to the cavity, d, and their radius, r, were changed. A photonic microcavity with a high Q factor of 1.8741 × 10⁷ and a modal volume V of 0.351 is demonstrated. We demonstrate that the calculated Q factor for the designed cavity increases by a factor of 49 relative to that for a cavity without displaced and reduced air holes, while the modal volume remains almost constant.     

The influence of thermal fluctuations on electronic and structural properties of Ge(0 0 1) surface

We present a theoretical study (within the density functional theory) of the influence of thermal fluctuations of the Ge(0 0 1) structure on its electronic properties, mainly in the context of possible metallization of this surface observed in experiment. Analysis is based on the results of three series of long-time molecular dynamics (MD) simulations performed for p(1 × 2), c(2 × 4) and p(2 × 4) surface unit cells. We have found that for the p(1 × 2) unit cell thermal fluctuations lead to the appearance of a sharp peak in the density-of-states distribution at the Fermi level, and consequently, to metallization of the germanium surface, while the energy structure of the c(2 × 4) reconstructed surface remains non-metallic even at high temperatures. This result is in an agreement with recently published scanning tunneling spectroscopy data. Our MD simulations show that, depending on the translational symmetry of the surface, thermal fluctuations may modify its electronic structure in quite a distinct way. The obtained results also indicate that the observed Ge(0 0 1) surface metallization is an averaged effect of the variations of the local density of states caused by thermal fluctuations.     

Local structure determination of a chiral adsorbate: Alanine on Cu(1 1 0)

N 1s and O 1s scanned-energy mode photoelectron diffraction (PhD) has been used to investigate the local structure of a single enantiomer of deprotonated alanine, alaninate, NH₂CH₃CHCOO-, on Cu(1 1 0) in the (3 × 2) phase. The local site is found to be similar to that of glycinate on Cu(1 1 0), with the N atoms in near-atop sites and the O atoms sites consistent with bonding to single surface Cu atoms but substantially off-atop. Unlike the Cu(1 1 0)(3 × 2)pg-glycinate phase, however, in which the two molecular species per unit mesh are mirror images of one another in identical local sites, the intrinsic chirality of l-alaninate means that the two molecules per unit mesh of the (3 × 2) surface phase occupy slightly different local sites. However, an excellent fit to the PhD data can be achieved by a minor modification of the structure found in DFT calculations by R.B. Rankin and D.S. Sholl [Surf. Sci. 574 (2005) L1] in which the heights of the N and O atoms above the surface are reduced by approximately 0.1 Å. The resulting average N-Cu and O-Cu values are 2.02 and 1.98 Å, respectively, with an estimated precision of ±0.03 Å. These bondlengths are shorter than those obtained from DFT by 0.08 and 0.10 Å, respectively.     

Asymmetric adsorption-site of potassium atoms in the (3 × 2)-p2mg structure formed on Cu(0 0 1)

The adsorption of K atoms on Cu(0 0 1) has been studied by low-energy electron diffraction (LEED) at room temperature (RT) and 130 K. At RT, a (3 × 2)-p2mg LEED pattern with single-domain was observed at coverage of 0.33, whereas the orthogonal two-domain was found at 130 K. At 130 K, a c(4 × 2) pattern with orthogonal two-domain was observed at coverage 0.25. Both the (3 × 2)-p2mg and c(4 × 2) structures have been determined by a tensor LEED analysis. It is demonstrated that K atoms are adsorbed on surface fourfold hollow sites in the c(4 × 2), while in the (3 × 2) structure two K atoms in the unit cell are located at an asymmetric site with a glide-reflection-symmetry. The asymmetric site is at near the midpoint between the exact hollow site and bridge-site but slightly close to the hollow site. A rumpling of 0.07 Å in the first Cu layer was confirmed, which might stabilize K atoms at the asymmetric site. Surface structures appearing in a coverage range 0.25-0.33 are discussed in terms of the occupation of the asymmetric site with increase of coverage.     

Atomic structure of the Si(5 5 12)-2 × 1 surface

Based on the results of scanning tunneling microscopy studies of the reconstructed Si(5 5 12)-2 × 1 surface, its atomic structure has been found. It turns out that Si(5 5 12)-2 × 1 consists of four one-dimensional structures: honeycomb (H) chain, π-bonded H′ (π) chain, dimer-adatom (D/A) row, and tetramer (T) row. Its period is composed of three subunits, i.e., (i) (3 3 7) unit with a D/A row [D(3 3 7)], (ii) (3 3 7) unit with a T row [T(3 3 7)], and (iii) (2 2 5) unit with both a D/A and a T row. Two kinds of adjacent subunits, T(3 3 7)/D(3 3 7) and D(3 3 7)/(2 2 5), are divided by H chains with 2× periodicity due to buckling, while one kind of adjacent subunits, T(3 3 7)/(2 2 5), is divided by a π chain with 1× periodicity. Two chain structures, H and π chains, commute with each other depending upon the external stresses perpendicular to the chain, which is the same for two row structures, D/A and T rows. It can be concluded that the wide and planar reconstruction of Si(5 5 12)-2 × 1 is originates from the stress balance among two commutable chains and two commutable rows.     

Design of high-Q cavities in 2D photonic crystals air holes filled with polymer

We design novel photonic crystal heterostructure, substituting the air in the holes with materials of refractive index higher than n = 1. This can be achieved by infiltrating the photonic crystal (PC) with polymer. We theoretically investigate the L₂ cavity with two missing holes in the center, where the six holes surrounding the cavity are locally filled with polymer. We show that cavity modes can be differently tuned depending on the size and the position of the first hole adjacent to the cavity. A photonic microcavity with a high Q factor of 5.5 × 10⁶ and a modal volume V of 0.1919 is demonstrated. We demonstrate that the calculated Q factor for the designed cavity increases by a factor of 22 relative to that for a cavity without displaced and reduced air holes, while the modal volume remains almost constant.     

Measurements of sound transmission through panels of locally resonant materials between impedance tubes

We present a method for the measurements of complex transmission coefficient through high transmission loss samples using three-sensors, two impedance tubes, monotonic wave excitation, and phase sensitive detection. Having demonstrated the effectiveness of the method on perforated plates measurements have been made on locally resonant sonic materials (LRSMs). The transmission losses of perforated plates are found to decrease with decreasing frequency down to 120 Hz, following the mass law. For the LRSM’s panels with the same area mass density but different compositions, the local resonance frequency (at which the transmission loss is maximum) is found to vary according to the predesigned value. Transmission losses as high as 96.5 dB at 630 Hz and 87 dB at 250 Hz can be measured with good accuracy, with corresponding phase spectra that match the theoretical prediction of LRSMs, confirming the reliability of the transmission data.     

Anomalous hybridization in the In-rich InAs(0 0 1) reconstruction

The surface bonding arrangement in nearly all the confirmed reconstructions of InAs(0 0 1) and GaAs(0 0 1) have only two types of hybridization present. Either the bonds are similar to those in the bulk and the surface atoms are sp³ hybridized or the surface atoms are in a tricoordinated bonding arrangement and are sp² hybridized. However, dicoordinated In atoms with sp hybridization are observed on the InAs(0 0 1), In-rich, room temperature and low temperature surfaces. Scanning tunneling microscopy (STM) images of the room temperature (300 K) InAs(0 0 1) surface reveal that the In-rich surface reconstruction consists of single-atom rows with areas of high electron density that are separated by ∼4.3 Å. The separation in electron density is consistent with rows of undimerized, sp hybridized, In atoms, denoted as the β3′(4 × 2) reconstruction. As the sample is cooled to 77 K, the reconstruction spontaneously changes. STM images of the low temperature surface reveal that the areas of high electron density are no longer separated by ∼4.3 Å but instead by ∼17 Å. In addition, the LEED pattern changes from a (4 × 2) pattern to a (4 × 4) pattern at 77 K. The 77 K reconstruction is consistent with two (4 × 2) subunit cells; one that contains In dimers on the row and another subunit cell that contains undimerized, sp hybridized, In atoms on the row. This combination of dimerized and undimerized subunit cells results in a new unit cell with (4 × 4) periodicity, denoted as the β3(4 × 4) reconstruction. Density functional theory (DFT) and STM simulations were used to confirm the experimental findings.     

Simulation of DWDM signals using optimum span scheme with cascaded optimized semiconductor optical amplifiers

We numerically simulated the ten channels at 10 Gb/s dense wavelength division multiplexing (DWDM) transmission faithfully over 17,227 km using 70 km span of single mode fiber (SMF) and dispersion compensating fiber (DCF) using optimum span scheme at channel spacing 20 GHz. For this purpose, inline optimized semiconductor optical amplifiers (SOAs) and DPSK format are used. We optimized the SOA parameters for inline amplifier with minimum crosstalk and amplified spontaneous emission noise with sufficient gain at bias current 400 mA. For this bias current, constant gain 36.5 dB is obtained up to saturation power 21.35 mW. We have also optimized the optical phase modulator bandwidth for 400 mA current which is around 5.5 GHz with crosstalk −14.2 dB between two channels at spacing 20 GHz.We show the 10×10 Gb/s transmission over 70 km distance with inline amplifier has good signal power received as compared to without amplifier, even at equal quality factor. We further investigated the optimum span scheme for 5670 km transmission distance for 10×10 Gb/s with channel spacing 20 at 5.5 GHz optical phase modulator bandwidth. As we increase the transmission distance up to 17,227 km, there is increase in power penalty with reasonable quality.The impact of optical power received and Q factor at 5670 and 17,227 km transmission distance for different span schemes for all channels has been illustrated. For launched optical power less than saturation, all channels are obtained at bit error rate floor of 10⁻¹⁰.     

Analysis and minimization of cross phase modulation in semiconductor optical amplifiers for multichannel WDM optical communication systems

A theoretical model for crosstalk in multichannel wavelength division multiplexing communication systems due to cross phase saturation in semiconductor optical amplifier structure is developed. This theoretical model is used to analyze the impact of the cross phase noise on the performance of semiconductor optical amplifiers in saturation region for WDM communication system by using differential phase shift modulation format. It is shown that by increasing the carrier life time, width and thickness while reducing the confinement factor, differential gain and bias current in the SOA structure mitigates the cross talk due to cross phase saturation. The impact of penalty and cross phase noise imposed on multichannel WDM links have been investigated for different parameters of the SOA with the variation in transmission distance. With the slight increase in differential gain of 200.2 × 10⁻¹⁸ cm² and confinement factor 0.41, the maximum transmission distance observed is 5220 km with good quality and nil power penalty for 10 × 40 Gb/s soliton RZ-DPSK WDM signals for the first time.     

Optimized design for 2 × 10 ultra-high Q silicon photonic crystal cavities

We propose an optimized design for the measurement in transmission of photonic crystal width-modulated line-defect cavities. By controlling the number of holes and rows that separate the cavity from the coupling waveguides, the measured quality factor of the cavity can be tuned to be close to the unloaded one. In the case of a weakly coupled cavity, we measure an ultra-high quality factor that reaches a value of 2 × 10⁶. This value is not obtained for the largest spacing but for an intermediate one. This counter-intuitive result is supported by 3D-FDTD modeling.