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1.
The synthesis and the crystal structure of Cs2Nb6Br5F12 containing octahedral niobium clusters are presented in this work. This bromofluoride is based on a Nb6Li12Fa6 (L=Br and F) unit and crystallizes in the orthorhombic system (space group, Cccm; Z=4; a=9.2446(2) Å, b=13.6256(3) Å, and c=17.1665(4) Å; R=0.0241). Fluorine and bromine are randomly distributed on the inner ligand positions, Li, that edge-bridge the Nb6 cluster whereas fluorine fully occupies the apical positions (La). The units are linked to each other by apical ligands leading to an original one-dimensional unit connection. The cesium atoms are statistically distributed on several sites that describe parallel channels along the [1 0 0] direction. The influence of fluorine ligands upon the stabilization of this structure type as well as the structural relationships with Ba2Zr6Cl17(B), Nb6F15, and NaMo6Cl13 will be evidenced and discussed.  相似文献   

2.
3.
The new compound Nb3Se5Cl7 was prepared by heating 2NbSe2Cl2 + 1NbCl4 at 530°C for 2–3 weeks. The compound is monoclinic with a = 7.599, b = 12.675, c = 8.051Å; β = 106.27°; space group P21m. The corresponding bromide, Nb3Se5Br7 (obtained by decomposition of NbSe2Br2 under NbSeBr3), is isotypic with a = 7.621, b = 12.833, c = 8.069Å; β = 106.21°. from the crystal structure and XPS spectra it follows that Nb3Se5Cl7 can be formulated as: [Nb4+2Nb5+1(Se2)2?2Se2?1Cl?7]. The structure consists of chains of composition [Nb4+2(Se2)2?2Cl?5], to which side chains [Nb5+Se2?Cl?2] are attached. The Nb4+ atoms form pairs (NbNb = 2.94 Å) which explains that Nb3Se5Cl7 is a diamagnetic semiconductor with a band gap (1.59 eV at 5°K, 1.49 eV at 300°K) very similar to that of NbSe2Cl2.  相似文献   

4.
Electronic structure calculations for NbS3 and Nb3S4 are reported. The NbS3 structure is closely related to that of ZrSe3. In the undistorted ZrSe3 atomic arrangement, NbS3 would be a metal; it is shown that the observed distortion, a pairing of Nb atoms along the b-axis relative to ZrSe3, stabilizes the NbS3 crystal by inducing a 0.5-eV semiconducting gap. Nb3S4 is found to be a metal with the Fermi level lying near a deep minimum in the density of electron states.  相似文献   

5.
本文研究了Bi2O3掺杂对Ag(Nb0.8Ta0.2)O3陶瓷的结构和介电性能的影响。X射线衍射(XRD)结果表明,Bi2O3的掺杂可以使陶瓷中Ag+被还原并析出,且银析出的量随Bi2O3掺杂量的增加而不断增加,这可能源自于Bi3+对Ag+的取代。在一定范围内增大Bi2O3掺杂量可提高Ag(Nb0.8Ta0.2)O3陶瓷的室温介电常数,降低介电损耗,并使温度系数向负值方向移动。当Bi2O3的掺杂量约为3.5wt%时,样品具有较大的介电常数(ε=672)和较小的介电损耗(tanδ=7.3×10-4)。  相似文献   

6.
The defect structure of TiO2·7Nb2O5 has been examined at about 0.3 nm resolution in an electron microscope. Under suitable conditions of crystal orientation and objective lens defocus, the contrast in images from very thin fragments can be interpreted directly in terms of structure. Proposed structures for Wadsley intergrowth defects and displacements are confirmed, and new observations of complex fault bands and grain boundaries are described. Microdomains of TiNb14O37, with the structure predicted by Wadsley, have also been found in this material.  相似文献   

7.
本文研究了Bi2O3掺杂对Ag(Nb0.8Ta0.2)O3陶瓷的结构和介电性能的影响。X射线衍射(XRD)结果表明,Bi2O3的掺杂可以使陶瓷中Ag+被还原并析出,且银析出的量随Bi2O3掺杂量的增加而不断增加,这可能源自于Bi3+对Ag+的取代。在一定范围内增大Bi2O3掺杂量可提高Ag(Nb0.8Ta0.2)O3陶瓷的室温介电常数,降低介电损耗,并使温度系数向负值方向移动。当Bi2O3的掺杂量约为3.5wt%时,样品具有较大的介电常数(ε=672)和较小的介电损耗(tanδ=7.3×10-4)。  相似文献   

8.
High-resolution transmission electron microscopy (HRTEM), resistivity measurements and electronic band structure calculations performed by means of the extended Hückel tight-binding method are presented for the quasi one-dimensional compounds AxNb3Te4 (A = In, Tl, Zn, Ag, Hg). HRTEM and electron diffraction performed on pure Nb3Te4 at room- and liquid nitrogen temperatures, reveal both the basic structure and the low-temperature charge-density waves (CDWs) modulation. Resistivity vs. temperature plots show characteristic CDW anomalies, dependent on the type and concentration of the atoms, intercalated into the large hexagonal tunnels of the host structure. It is shown that intercalation of Tl and In results in a flattening of the corresponding Fermi surfaces and that CDW formation is largely dependent on the coincidence between the Fermi level EF and a small peak in the density of states spectrum, mainly developed from the Nb dz2 orbitals. This peak is positioned in a minimum between the filled and empty states of the spectrum and tends to split into a doublet as a consequence of intercalation.  相似文献   

9.
A study of the NbPdSe system has afforded a new phase, Nb2Pd3Se8. The structure of this phase has been established through single-crystal X-ray measurements. The compound crystallizes in space group D92h-Pbam with two formula units in a cell of dimensions a = 15.074(6), b = 10.573(4), c = 3.547(2)Å. In this unusual structure there are two chains of edge-sharing selenium trigonal prisms centered by niobium atoms. These chains conjoin through two types of palladium atoms—square planar and square pyramidal—each coordinated by selenium atoms. As a consequence of this conjunction tunnels extending along c result. Electrical conductivity measurements indicate that this material is a metallic-semiconductor.  相似文献   

10.
The crystal structure of Nb22O54 is reported for the first time, and the structure of orthorhombic Nb12O29 is reexamined, resolving previous ambiguities. Single crystal X-ray and electron diffraction were employed. These compounds were found to crystallize in the space groups P2/m (, , , β=102.029(3)°) and Cmcm (, , ), respectively and share a common structural unit, a 4×3 block of corner sharing NbO6 octahedra. Despite different constraints imposed by symmetry these blocks are very similar in both compounds. Within a block, it is found that the niobium atoms are not located in the centers of the oxygen octahedra, but rather are displaced inward toward the center of the block forming an apparent antiferroelectric state. Bond valence sums and bond lengths do not show the presence of charge ordering, suggesting that all 4d electrons are delocalized in these compounds at the temperature studied, T=200 K.  相似文献   

11.
Crystallographic shear (CS) phases occurring in the Nb2O5WO3 and Ta2O5WO3 systems near to WO3 were characterized by X-ray diffraction and high-resolution transmission electron microscopy. The Nb2O5WO3 samples were heated at 1600K. They contained ordered {104} and {001} CS planes and wavy CS which were composed of intergrowths of {104} and {001} CS segments. The composition range over which the {104} CS series extended was from (Nb,W)O2.954 i.e., (Nb,W)65O192, to (Nb,W)O2.942, i.e., (Nb,W)52O153. The composition range over which the {001} CS series extended was from (Nb,W)O2.9375, i.e., (Nb,W)16O47 to (Nb,W)O2.875, i.e., (Nb,W)8O23. The Ta2O5WO3 samples were prepared at 1593, 1623, and 1672K. At lower temperatures ordered {103} CS phases were found, with a composition range extending between (Ta,W)O2.960, i.e., (Ta,W)50O148, to (Ta,W)O2.944, i.e., (Ta,W)36O106. At 1673K ordered {103} CS phases occurred, as did wavy CS composed of intergrowths of {103} and {104} CS segments.  相似文献   

12.
One isomer of C60(i-C3F7)8, three isomers of C60(i-C3F7)6, and the first mixed perfluoroalkylated fullerene, C60(CF3)2(i-C3F7)2, have been isolated by HPLC from a mixture prepared by reaction of C60 with heptafluoroisopropyl iodide in a glass ampoule at 260-290 °C. The molecular structures of the four new compounds have been determined by means of X-ray single crystal diffraction partially also by use of synchrotron radiation. Theoretical calculations at the DFT level of theory have been employed to rationalize the energetics of isomers and of C60-Rf binding.  相似文献   

13.
Ampoule reactions of C70 with n- and i-C3F7I were carried out at 250-310 °C. Two step HPLC separations allowed the isolation of several C70(n-C3F7)4-8 and C70(i-C3F7)4 compounds. Crystal and molecular structures of C70(n-C3F7)8-V, C70(n-C3F7)6O, C70(n-C3F7)4, and three isomers of C70(i-C3F7)4 have been determined by X-ray crystallography using synchrotron radiation. Molecular structures of the new compounds were compared with the known examples and discussed in terms of addition patterns and relative energies of their formation.  相似文献   

14.
The compounds RbAuUSe3, CsAuUSe3, and RbAuUTe3 were synthesized at 1073 K from the reactions of U, Au, Q, and A2Q3 (A=Rb or Cs; Q=Se or Te). The compound CsAuUTe3 was synthesized at 1173 K from the reaction of U, Au, Te, and CsCl as a flux. These isostructural compounds crystallize in the KCuZrS3 structure type in space group Cmcm of the orthorhombic system. The structure consists of layers that contain nearly regular UQ6 octahedra and distorted AuQ4 tetrahedra. The infinite layers are separated by bicapped trigonal prismatic A cations. The magnetic behavior of RbAuUSe3 deviates significantly from Curie–Weiss behavior at low temperatures. For T>200 K, the values of the Curie constant C and the Weiss constant θp are 1.82(9) emu K mol−1 and −3.5(2)×102 K, respectively. The effective magnetic moment μeff is 3.81(9) μB. Formal oxidation states of A/Au/U/Q may be assigned as +1/+1/+4/−2, respectively.  相似文献   

15.
The reaction between transition metal alkoxides and benzyl alcohol provides a novel soft chemistry route to metal oxide nanoparticles. The method allows the preparation of nanocrystals of two important transition metal oxides, namely V2O3 and Nb2O5. Although the reaction temperatures of 200–220 °C are comparably low, the obtained particles are highly crystalline. According to TEM investigations, the V2O3 crystals exhibit particle sizes between 20 and 50 nm, and the Nb2O5 crystals display platelet-like particle shapes with sizes of 50–80 nm, without any indications of amorphous character.  相似文献   

16.
Transition metal trichalcogenides TaSe3, TaS3, NbSe3 and NbS3 were prepared under the reaction conditions of 2 GPa, 700°C, 30 min. NbSe3 is exactly the same as that obtained in the usual sealed-tube method. The other products are modifications of each usual phase. They have crystal structures very similar to that of NbSe3. The lattice parameters are a = 10.02Å, b = 3.48 Å, c = 15.56 Å, β = 109.6° for TaSe3, a = 9.52 Å, b = 3.35 Å, c = 14.92 Å, β = 110.0° for TaS3, and a = 9.68 Å, b = 3.37 Å, c = 14.83 Å, β = 109.9° for NbS3. In spite of the similarity in their crystal structures, these high-pressure phases show a variety of electrical transport properties. TaSe3 is a superconductor having Tc at 1.9 K. TaS3 is a semiconductor with two transitions at 200 and 250 K. NbS3 is a semiconductor with Ea = 180 MeV.  相似文献   

17.
The reactions of methane with the dications C7H62+, C7H72+, and C7H82+ generated by electron ionization of toluene are studied using mass-spectrometry tools. It is shown that the reactivity is dominated by the formation of doubly charged intermediates, which can either eliminate molecular hydrogen to yield doubly charged products or undergo charge-separation reactions leading to the formation of a methyl cation and the corresponding C7Hn+1+ monocation. Typical processes observed for dications, like electron transfer or proton transfer, are largely suppressed. The theoretically derived mechanism of the reaction between C7H62+ and CH4 indicates that the formation of the doubly charged intermediate is kinetically preferred at low internal energies of the reactants. In agreement, the experimental results show a pronounced hydrogen scrambling and dominant formation of the doubly charged products at low collision energies, whereas direct hydride transfer prevails at larger collision energies.  相似文献   

18.
The intermetallic cerium compounds Ce3-Pd3Bi4, CePdBi, and CePd2Zn3 were synthesized from the elements in sealed tantalum ampoules in an induction furnace. The compounds were characterized by X-ray powder and single crystal diffraction: CeCo3B2 type (ordered version of CaCu5), P6/mmm, a = 538.4(4), c = 427.7(4) pm, wR2 = 0.0540, 115 F 2 values, 9 variables for CePd2Zn3 and Y3Au3Sb4 type, I [`4]{\bar 4} 3d, a = 1005.2(2) pm, w R2 = 0.0402, 264 F 2 values, 9 variables for Ce3Pd3Bi4, and MgAgAs type, a = 681.8(1) pm for CePdBi. The bismuthide structures are build up from three-dimensional networks of corner-sharing PdBi4 tetrahedra with Pd–Bi distances of 281 (Ce3Pd3Bi4) and 296 pm (CePdBi), respectively. The cerium atoms are located in larger voids of coordination number 12 (Ce3Pd3Bi4) and 10 (CePdBi). In CePd2Zn3 the cerium atoms fill larger channels within the three-dimensional [Pd2Zn3] network with 18 (6 Pd + 12 Zn) nearest neighbors. The three compounds contain stable trivalent cerium with experimental magnetic moments of μeff = 2.70(2), 2.48(1), and 2.49(1) μB/Ce atom for CePd2Zn3, Ce3Pd3Bi4, and CePdBi, respectively. Susceptibility and specific heat data gave no hint for magnetic ordering down to 2.1 K.  相似文献   

19.
Introduction Boratecompounds,inwhichboronisboundonly tooxygen,areofconsiderablemineralogicalandindus trialimportance.Thesecompoundscontaininganionic componentscomposedofBO3andBO4groups,which maybelinkedtogetherbysharingoxygenatoms,can formisolatedringsand…  相似文献   

20.
The X-ray single crystal structure of 3-R Nb1.06S2 has been determined. The material crystallizes in the space group R3m with a = 3.3285(4) and c = 17.910(4) Å when indexed on a hexagonal lattice. The structure was refined by full matrix least squares procedures to a final residual of R = 0.026 based on 79 observed (I > 3σI) reflections. The sulfurs form closest-packed layers with the majority of the metal in sheets of trigonal prismatic sites. A small portion of niobium was found to occupy octahedral sites, between the van der Waals gaps of the sulfur lattice. Niobium in the van der Waals region is trigonally distorted from octahedral symmetry, with niobium-sulfur distances of 2.234(8) and 2.577(11) Å, because of repulsion from niobium in adjacent trigonal prismatic layers.  相似文献   

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