氟代寡聚噻吩系列衍生物的载流子传输性质的理论研究

基于密度泛函理论方法,采用Marcus电荷转移公式,分别从几何和电子结构、重组能、转移积分及迁移率等方面研究了氟代寡聚噻吩系列衍生物中噻吩环个数、全氟代苯位置的改变及F原子的引入对体系载流子传输性质的影响.计算结果表明,化合物1b,1c和1d的电子迁移率随着噻吩单元个数的增加而逐渐升高,因此可以通过增加噻吩单元个数来提高其电子迁移率;而对于化合物1d,2a和2b而言,氟代苯位置的改变对传输性质产生了较大的影响,其中化合物1d具有良好的平面性和π-π堆积,传输性能最好,有望成为良好的双极性传输材料;比较化合物2b与3可以发现,F原子的引入增大了化合物2b的载流子迁移率,为实验设计高迁移率的传输材料提供了理论依据.     

噻吩在Ni(111)表面吸附的密度泛函理论研究

采用密度泛函理论方法,运用平板模型对噻吩分子在Ni(111)表面的水平吸附进行了结构优化和能量计算.结果表明,hcpA位的吸附最稳定,以bridgeB吸附最不稳定;噻吩吸附在表面上时,S原子向上翘起,4个C原子与边面Ni原子的作用更紧密,表面原子与噻吩的匹配程度决定了吸附的强度和吸附后S—C键的活泼性;噻吩以bridgeA吸附时分子与表面之间的电子给予与反馈最多,分子最活泼,而hcpA位吸附后噻吩分子轨道上电子的能量变稳定,分子并不活泼.     

线型和星型平面噻吩类低聚物衍生物分子结构及光电性质研究

运用密度泛函DFT B3LYP／6-31G(d)方法对线型(a)和星型(b)平面噻吩类低聚物衍生物分别进行了几何构型优化,并采用含时密度泛函TD-DFT B3LYP／6-31G(d)方法计算了其紫外吸收光谱．计算结果表明:用TD-DFT．方法计算体系的紫外吸收光谱值与实验数据吻合;通过对噻吩类低聚物衍生物分子几何结构和前线分子轨道能级的分析,并从理论上解释了线型(a)和星型(b)衍生物光谱性质的差异:后者与前者相比较吸收光谱发生红移,这是由于星型结构使其相应HOMO能级升高,电离能(IP)降低,成为很好的电子给体和空穴传输材料．     

汽油烷基化脱硫反应中噻吩及其衍生物的烷基化性能

 研究了噻吩、2-甲基噻吩、3-甲基噻吩和 2,5-二甲基噻吩等硫化物与己烯进行烷基化反应的性能. 结果发现,它们进行一次烷基化反应的能力都比较强,在实验条件下转化率几乎都达到了100%. 但噻吩衍生物与己烯进行二次以至多次烷基化反应的能力则随着噻吩环上支链的增加逐渐减弱,原因可能来自噻吩衍生物继续进行烷基化反应的热力学条件不利,以及环上已有侧链的空间位阻效应. 噻吩衍生物发生深度烷基化反应能力的减弱导致了另外两个并行竞争反应芳烃烷基化和烯烃烷基化(聚合)的反应程度增强,表现为芳烃转化率和己烯聚合量的升高,以及各自二次烷基化产物相对含量的增加.     

Au(111)面上噻吩加氢脱硫反应机理的理论研究

采用密度泛函理论方法研究了噻吩在Au(111)面上的吸附模式, 并探讨了其在Au(111)面上可能的加氢脱硫反应机理, 对不同机理下各个基元反应的过渡态进行了筛选, 得到了各个步骤的能量变化及所需活化能.计算结果表明, 噻吩在Au(111)面上以S端倾斜吸附在Top位时最稳定.直接脱硫机理表明, 其所需活化能较低, 升高温度有利于提高脱硫反应产率, 但脱硫产物较难控制; 间接脱硫机理表明, 脱硫反应最可能按照加氢异构方式进行, 降低温度有利于脱硫反应产率的提高.随着反应的进行, 噻吩环中的C—S键键长逐渐增大, 键能逐渐减小, 有利于C—S键断裂, 具体步骤为:(1) C₄H₄S+H₂α,α-C₄H₆S; (2) α,α-C₄H₆S+H₂C₄H₈S; (3) C₄H₈S+H₂C₄H₁₀+S, 其中S原子的脱去步骤所需活化能最高, 为反应的限速步骤.     

二苯乙烯衍生物和二噻吩并噻吩衍生物的双光子吸收截面的理论研究

用AMI和INDO/CI理论方法,系统研究了二苯乙烯衍生物和二噻吩衍生物的结构和电子光谱。在正确的UV-vis光谱基础上,预测了双光子吸收峰的位置。用完全态求和(SOS)公式计算了三阶非线性光学系数及双光子吸收截面,并从微观上探讨了不同骨架以及不同取代基对双光子吸收截面的影响。     

噻吩在γ-Mo_2N(100)表面上加氢脱硫反应的密度泛函理论研究

利用密度泛函理论研究了γ-Mo2N(100)表面上的噻吩加氢脱硫(HDS)过程.噻吩在γ-Mo2N(100)表面上不同作用形式的结构优化结果显示,η5-Mo2N吸附构型最稳定,具有最大的吸附能(-0.56 eV),此时噻吩通过S原子与Mo2原子相连平行表面吸附在四重空位(hcp位).H原子和噻吩在hcp位发生稳定共吸附,hcp位是噻吩HDS的活性位点.噻吩在γ-Mo2N(100)表面进行直接脱硫反应,HDS过程分为S原子脱除和C4产物加氢饱和两部分.过渡态搜索确定了HDS最可能的反应机理及中间产物,首个H原子的反应需要最大的活化能(1.69 eV),是噻吩加氢脱硫的控速步骤.伴随H原子的不断加入,噻吩在γ-Mo2N(100)表面上优先生成―SH和丁二烯,随后―SH加氢生成H2S,丁二烯加氢饱和生成2-丁烯和丁烷.由于较弱的吸附,H2S、2-丁烯和丁烷很容易在γ-Mo2N(100)表面脱附成为产物.     

噻吩在γ-Mo2N(100)表面上加氢脱硫反应的密度泛函理论研究

利用密度泛函理论研究了γ-Mo₂N(100)表面上的噻吩加氢脱硫(HDS)过程. 噻吩在γ-Mo₂N(100)表面上不同作用形式的结构优化结果显示, η5-Mo₂N吸附构型最稳定, 具有最大的吸附能(-0.56 eV), 此时噻吩通过S原子与Mo2原子相连平行表面吸附在四重空位(hcp 位). H原子和噻吩在hcp位发生稳定共吸附, hcp位是噻吩HDS的活性位点. 噻吩在γ-Mo₂N(100)表面进行直接脱硫反应, HDS过程分为S原子脱除和C₄产物加氢饱和两部分. 过渡态搜索确定了HDS最可能的反应机理及中间产物, 首个H原子的反应需要最大的活化能(1.69 eV),是噻吩加氢脱硫的控速步骤. 伴随H原子的不断加入, 噻吩在γ-Mo₂N(100)表面上优先生成―SH和丁二烯, 随后―SH加氢生成H₂S, 丁二烯加氢饱和生成2-丁烯和丁烷. 由于较弱的吸附, H₂S、2-丁烯和丁烷很容易在γ-Mo₂N(100)表面脱附成为产物.     

噻吩衍生物电子结构的DFT研究

采用B3LYP方法在6-31G^*水平上优化了12种α位取代噻吩衍生物的几何构型，采用TD-DFT方法计算了它们的前线轨道能级和电子光谱．结果表明，a，f和1分子比它们的同分异构体要稳定；噻吩衍生物与苯、吡啶相比，也具有很好的共轭性；随着分子中所连接基团数目的增多，特别是-CN的增加，分子的偶极距增大，前线轨道能级差减小，分子的最大吸收波长发生红移；对于具有相同共轭链的同分异构体，c，g，k分子的偶极距较大，而前线轨道能级差最小的分别为b，e，1分子，相应的最大吸收波长也较大．这些结论对分子设计具有重要的指导意义．     

理论研究四氮杂环庚烯噻吩衍生物光物理性质1

本文运用密度泛函理论(DFT)研究了四氮杂环庚烯底物(M0)及其噻吩衍生物(M1～M4)的HOMO与LUMO能量、电离能(IP)、电子亲和势(EA)以及重组能(λ).运用含时密度泛函理论(TDDFT)计算上述化合物的吸收与荧光光谱.结果 表明,对于M0～M4分子,S0←→S1电子跃迁均归属于相应分子HOMO、LUM...     

用GGA密度泛函及其长程、色散校正方法计算各类氢键的结合能

应用广义梯度近似(GGA) (PW91和PBE)、含动能密度的广义梯度近似(meta-GGA) (M06-L)、杂化泛函(hyper-GGA)(M06-2X、X3LYP和B3LYP)及其长程校正泛函LC-DFT(CAM-B3LYP、LC-ωPBE和ωB97X)和色散校正密度泛函(DFT-D)(ωB97X-D和B97-D),用多种基函数对15种不同强度的传统氢键和非传统氢键体系的结合能进行了系统的计算与分析.并与高精度的CCSD(T)/aug-cc-pVQZ结果比较发现:在上述各类泛函中,对于氢键结合能的计算M06-2X和ωB97X-D泛函较为精确与可靠,且没有必要使用过大的基函数,6-311++G(2d,2p)或aug-cc-pVDZ水平的基组就已足够,各类泛函所计算结合能的基组重叠误差(BSSE)均较小,除ωB97X和ωB97X-D外,其它9种泛函不经BSSE校正也能得到同样甚至更准确的结果.     

Universal systematic sequence of even-tempered Gaussian primitive functions in electronic correlation studies

The possibility of developing a universal systematic sequence of eventempered Gaussian primitive functions for atomic and molecular electronic structure studies is examined. The radial beryllium-like ions are used to demonstrate this approach both within the Hartree-Fock model and by including correlation effects. Correlation energies are computed using the diagrammatic many-body perturbation theory. The Hartree extrapolation procedure is used to obtain empirical upper bounds to the basis set limit and the procedure of Schmidt and Ruedenberg is employed to obtain empirical lower bounds for the basis set limit. The convergence properties of the calculations with respect to the size of the basis set are examined.     

Systematic sequences of even-tempered Gaussian primitives in electron correlation studies using many-body perturbation theory

The use of systematic sequences of even-tempered Gaussian primitive functions in electron correlation studies using diagrammatic many-body perturbation theory is examined. The s limit electronic energy of the Be atom and the sp limit energy of the Ne atom have been computed as examples. The use of the Hartree extrapolation procedure to obtain empirical upper bounds for the basis set limit is investigated. The empirical lower bound for the basis set limit suggested by Schmidt and Ruedenberg is examined for calculations which include electron correlation.     

Scaling in second-order electron correlation calculations using systematic sequences of even-tempered basis sets

Improved results can often be obtained from second-order Rayleigh-Schrödinger perturbation calculations of electron correlation energies using large basis sets by introducing a scaling factor in the zero-order Hamiltonian. The scaling parameter may be determined from full third-order calculations using a smaller basis set. This scaling procedure can be applied in a systematic fashion by employing a sequence of even-tempered basis sets. Calculations illustrating this approach for the beryllium atom and the neon atom are presented. The scaling procedure is also employed in conjunction with a universal systematic sequence of basis functions. Calculations illustrating this Correlation energy — Mang-body perturbation theory.Work supported in part by S.R.C. Research Grant GR/B/4738.6.S.R.C. Advanced Fellow.     

Synthesis and some properties of binuclear ruthenocene derivatives bridged by both ethene and thiophene derivatives

Binuclear ruthenocenes bridged by ethenes and thiophene derivatives, Rc-CHCH-Z-Rc and Rc^∗-CHCH-Z-CHCH-Rc^∗ (Z = thiophene, thieno[3,2-b]thiophene, and 2,2′-bithiophene; Rc = ruthenocenyl, R^∗ = 1′,2′,3′,4′,5′-pentamethylruthenocenyl) were prepared. These complexes showed a one-step two-electron redox wave in the cyclic voltammograms, in contrast to the benzenoid-bridged dinuclear ruthenocenes. The chemical oxidation of the Rc-CHCH-Z-Rc complexes gave no stable oxidized species. The two-electron oxidized species of the Rc^∗-CHCH-Z-CHCH-Rc^∗ complexes were comparably stable and contained a fulvene-complex type structure.     

含噻吩环恶二唑衍生物的合成及电化学性能研究

合成了新的化合物２,５－双「２,２′－双（５－取代苯基）－１,３,４－恶二唑」噻吩（Ｒ－ＯＸＤ）（Ｒ＝Ｈ,ＣＨ３Ｏ,ＣＨ３,Ｆ,ＣＮ）,用＾１Ｈ ＮＭＲ和元素分析对其进行了表征,同时,采用循环伏安法对其电化学性能进行了测试。结果表明,除了Ｆ－ＯＸＤ外,这一系列化合物的电子亲和势高于常用电子传输材料ＰＢＤ,说明它们的电子传输材料性能优良。     

噻吩在猝冷骨架Ni上吸附脱硫的XPS研究

采用X射线光电子能谱(XPS)研究了室温下噻吩在猝冷骨架Ni吸附剂上的吸附及受热分解行为. 研究结果表明, 298 K时噻吩首先在吸附剂表面发生C—S键断裂, 生成原子硫及含金属的有机环状化合物. 当吸附剂表面完全被解离物种覆盖后, 发生噻吩的多层物理吸附. 加热至373 K, 大部分物理吸附的噻吩直接脱附, 其余部分在碳物种脱附后暴露的Ni表面上发生解离. 473 K时表面的碳物种消失, 而残留在样品上的硫均转化为硫化镍.      

季铵盐相转移催化氧化噻吩脱硫的研究

在验证季铵盐相转移催化氧化噻吩脱硫符合Starks循环模型的基础上推导了噻吩氧化脱硫的反应历程. 反应历程主要包括氧化活性组分从水相向有机相的转移和有机相中的离子反应两个基本阶段, 通过理论计算得到了季铵盐阳离子的萃取平衡常数、阴离子的亲核性以及决定阴阳离子相互作用能的离子有效半径, 筛选出了与实验结果一致的具有良好的相转移催化效果的四丁基溴化铵, 脱硫率最高可达到86.36%; 动力学研究结果表明, 以四丁基溴化铵作为相转移催化剂(PTC), H2O2/HCOOH氧化噻吩脱硫为一级反应.     

A systematic ab initio study of the water dimer in hierarchies of basis sets and correlation models

A systematic, high-level ab initio investigation of the water dimer has been performed. The oxygen-oxygen bond distance has been estimated to be around 2.90 ?, about 0.05 ? shorter than the experimentally estimated distance, challenging the accuracy of the latter. The interaction energy has been obtained at −5.0±0.1 kcal/mol, which compares favourably with the experimentally estimated value of −5.4±0.7 kcal/mol. The importance of employing basis sets that include diffuse functions in correlated calculations on hydrogen-bonded systems is confirmed. In correlated calculations on the water dimer and the hydrogen fluoride dimer, the counterpoise-corrected interaction energies converge considerably slower towards the basis set limit than do the uncorrected energies, provided that the correlation-consistent basis sets are augmented with diffuse functions. Received: 12 February 1997 / Accepted: 5 June 1997     

噻吩加聚物(C4H4S) n(n=1～8)的密度泛函理论研究

Thiophene polymers（C4H4S）n（ n = 1 ～ 8）have been studied on B3LYP / 6-31G theory level. Vibrational frequencies,total energy（ET）,zero point energy（ZPE）,capacity（C0P）,entropy（S0 ）and energy gap（ΔE）was calculated based on the optimized equilibrium structures. By means of frequency analysis,the equilibrium structures were confirmed. The relationships between ET,ZPE,C0P,S0,ΔE and n were studied. The formation enthalpy of thiophene polymers was calculated with the total energies. The polymerized process and relative stability of the title compounds was determined according to the data of the formation enthalpy. The calculated results indicated that the thiophene molecular which has a planar structure exists in the stable chain polymers and the chain structures（C4H4S）n（ n > 1）present different stabilities when n is an even or odd number. ZPE,C0P,and S0 show a linear increasing trend with n. The energy gaps ΔE show a direct proportion to n too,which indicated that the conduct property increases with n. The results also illustrated that the stepsize polymerized process is the primary way in the polymerized reactions.