Crystal structure and physical properties of quaternary clathrates Ba8ZnxGe46−x−ySiy, Ba8(Zn,Cu)xGe46−x and Ba8(Zn,Pd)xGe46−x

Three series of vacancy-free quaternary clathrates of type I, Ba₈Zn_xGe_46−x−ySi_y, Ba₈(Zn,Cu)_xGe_46−x, and Ba₈(Zn,Pd)_xGe_46−x, have been prepared by reactions of elemental ingots in vacuum sealed quartz at 800 °C. In all cases cubic primitive symmetry (space group Pm3?n, a∼1.1 nm) was confirmed for the clathrate phase by X-ray powder diffraction and X-ray single crystal analyses. The lattice parameters show a linear increase with increase in Ge for Ba₈Zn_xGe_46−x−ySi_y. M atoms (Zn, Pd, Cu) preferably occupy the 6d site in random mixtures. No defects were observed for the 6d site. Site preference of Ge and Si in Ba₈Zn_xGe_46−x−ySi_y has been elucidated from X-ray refinement: Ge atoms linearly substitute Si in the 24k site whilst a significant deviation from linearity is observed for occupation of the 16i site. A connectivity scheme for the phase equilibria in the “Ba₈Ge₄₆” corner at 800 °C has been derived and a three-dimensional isothermal section at 800 °C is presented for the Ba-Pd-Zn-Ge system. Studies of transport properties carried out for Ba₈{Cu,Pd,Zn}_xGe_46−x and Ba₈Zn_xSi_yGe_46−x−y evidenced predominantly electrons as charge carriers and the closeness of the systems to a metal-to-insulator transition, fine-tuned by substitution and mechanical processing of starting material Ba₈Ge₄₃. A promising figure of merit, ZT ∼0.45 at 750 K, has been derived for Ba₈Zn_7.4Ge_19.8Si_18.8, where pricey germanium is exchanged by reasonably cheap silicon.     

Superconductivity and crystal structure of the solid solutions of Ba8−δSi46−xGex (0?x?23) with Type I clathrate structure

The solid solutions of barium containing Type I clathrate, Ba_8−δSi_46−xGe_x (0?x?23) were prepared under high-pressure and high-temperature conditions of 3 GPa at 800°C. All the solid solutions showed superconductivity, and the transition temperature (T_c) decreased from 8.0 to 2.0 K as the germanium content increased from x=0 to 23 in Ba_8−δSi_46−xGe_x. The single crystals with five different compositions were obtained and the structures, compositions, and site occupancies were determined from X-ray single-crystal analysis. A slight barium deficiency was observed at Ba1 (2a) sites for all the clathrates. The Ge atoms replaced the Si atoms at the Si3 (24k) site in the composition range of x<8, and then at the Si2 (16i) site. The crystals had a slight deficiency in the covalent (Si, Ge) network and the deficiency increased with the increase of the Ge content.     

La4(Si5.2Ge2.8O18)(TeO3)4 and La2(Si6O13)(TeO3)2: Intergrowth of the lanthanum(III) tellurite layer with the XO4 (X=Si/Ge) tetrahedral layer

Two novel lanthanum(III) silicate tellurites, namely, La₄(Si_5.2Ge_2.8O₁₈)(TeO₃)₄ and La₂(Si₆O₁₃)(TeO₃)₂, have been synthesized by the solid state reactions and their structures determined by single crystal X-ray diffraction. The structure of La₄(Si_5.2Ge_2.8O₁₈)(TeO₃)₄ features a three-dimensional (3D) network composed of the [(Ge_2.82Si_5.18)O₁₈]⁴⁻ tetrahedral layers and the [La₄(TeO₃)₄]⁴⁺ layers that alternate along the b-axis. The germanate-silicate layer consists of corner-sharing XO₄ (X=Si/Ge) tetrahedra, forming four- and six-member rings. The structure of La₂(Si₆O₁₃)(TeO₃)₂ is a 3D network composed of the [Si₆O₁₃]²⁻ double layers and the [La₂(TeO₃)₂]²⁺ layers that alternate along the a-axis. The [Si₆O₁₃]²⁻ double layer is built by corner-sharing silicate tetrahedra, forming four-, five- and eight-member rings. The TeO₃²⁻ anions in both compounds are only involved in the coordination with La³⁺ ions to form a lanthanum(III) tellurite layer. La₄(Si_5.2Ge_2.8O₁₈)(TeO₃)₄ is a wide band-gap semiconductor.     

Structural, magnetic, and thermal characteristics of the phase transitions in Gd5GaxGe4−x magnetocaloric materials

Temperature-dependent, single crystal and powder X-ray diffraction studies as well as magnetization, and heat capacity measurements were carried out on two phases of the Gd₅Ga_xGe_4−x system: for x=0.7 and 1.0. Gd₅Ga_0.7Ge_3.3 shows three structure types as a function of temperature: (i) from 165 K to room temperature, the orthorhombic Sm₅Ge₄-type structure exists; (ii) below 150 K, it transforms to a orthorhombic Gd₅Si₄-type structure; and (iii) a monoclinic Gd₅Si₂Ge₂-type component is observed for the intermediate temperature range of 150 K≤T≤165 K. This is the first time that all these three structure types have been observed for the same composition. For Gd₅Ga_1.0Ge_3.0, the room temperature phase belongs to the orthorhombic Pu₅Rh₄-type structure with interslab contacts between main group atoms of 2.837(4) Å. Upon heating above 523 K, it transforms to a Gd₅Si₄-type structure with this distance decreasing to 2.521(7) Å before decomposing above 573 K.     

REAuAl4Ge2 and REAuAl4(AuxGe1−x)2 (RE=rare earth element): Quaternary intermetallics grown in liquid aluminum

The two families of intermetallic phases REAuAl₄Ge₂ (1) (RE=Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Er, Tm and Yb) and REAuAl₄(Au_xGe_1−x)₂ (2) (x=0.4) (RE=Ce and Eu) were obtained by the reactive combination of RE, Au and Ge in liquid aluminum. The structure of (1) adopts the space group R-3m (CeAuAl₄Ge₂, , ; NdAuAl₄Ge₂, , ; GdAuAl₄Ge₂, , ; ErAuAl₄Ge₂, , ). The structure of (2) adopts the tetragonal space group P4/mmm with lattice parameters: , for EuAuAl₄(Au_xGe_1−x)₂ (x=0.4). Both structure types present slabs of “AuAl₄Ge₂” or “AuAl₄(Au_xGe_1−x)₂” stacking along the c-axis with layers of RE atoms in between. Magnetic susceptibility measurements indicate that the RE atoms (except for Ce and Eu) possess magnetic moments consistent with +3 species. The Ce atoms in CeAuAl₄Ge₂ and CeAuAl₄(Au_xGe_1−x)₂ (x=0.4) appear to be in a mixed +3/+4 valence state; DyAuAl₄Ge₂ undergoes an antiferromagnetic transition at 11 K and below this temperature exhibits metamagnetic behavior. The Eu atoms in EuAuAl₄(Au_xGe_1−x)₂ (x=0.4) appear to be in a 2+ oxidation state.     

The new binary intermetallic YbGe2.83

The new compound YbGe_2.83 was obtained from the reaction of Yb and Ge in liquid indium. The crystal structure of YbGe_2.83 adopts the trigonal, P3?m1 space group with a=b=8.3657(12) Å and c=7.0469(14) Å. The structure of YbGe_2.83 is a variant of the CaAl₂Si₂ structure type with ordered vacancies. Germanium atoms form double layers of puckered hexagons creating slabs that sandwich the Yb atoms. YbGe_2.83 can be classified as a Zintl compound with the formula Yb^(2+x)+(Ge_2.83)^(2+x)−. The deficiencies at the Ge sites cause a mixed/intermediate valent state of ytterbium (Yb^2.35+). Valence bond sum calculations suggest an average valence of Yb ions in YbGe_2.83 of 2.51 consistent with an intermediate valence compound.     

Crystal structure and electronic properties of the new compounds U3Co12−xX4 with X=Si, Ge

The new compounds U₃Co_12−xX₄ with X=Si, Ge were prepared by direct solidification of the corresponding liquid phase, followed by subsequent annealing at 1173 K. Single crystal X-ray diffraction carried out at room temperature showed that they crystallize with the hexagonal space group P6₃/mmc (no.194) and the unit-cell parameters a=8.130(5), c=8.537(5) Å and a=8.256(1), c=8.608(1) Å for the silicide and germanide, respectively. Their crystal structure derives from the EuMg_5.2 structure type, and is closely related to the Sc₃Ni₁₁Si₄ and Gd₃Ru_4−xAl_12+x types. For the present compounds, no substitution mechanisms have been observed, the partial occupancy of one Co site results from the presence of vacancies, only. The homogeneity ranges, evaluated by energy dispersive spectroscopy analysis, extend from x=0.0(2) to 0.3(2) and from x=0.0(2) to 1.0(2) for U₃Co_12−xSi₄ and U₃Co_12−xGe₄, respectively. The electronic properties of both compounds were investigated by means of DC magnetic susceptibility and DC electrical resistivity measurements. The U₃Co_12−xX₄ compounds are both Pauli paramagnets with their electrical resistivity best described as poor metallic or dirty metallic behavior.     

Magnetic transitions in the Gd5Si4−xPx (x = 0.5, 0.75, 1.25) phases. Magnetocaloric effect of the Gd5Si2.75P1.25 phase

The Gd₅Si_2.75P_1.25 phase with all interslab Si/P–Si/P dimers broken (Sm₅Ge₄-type structure) undergoes a ferromagnetic transition at 184 K. For this phase, the magnetocaloric effect in terms of the magnetic entropy change, ΔS, reaches the maximum value of −7.8 J/kg K at 177 K. Absence of a temperature-dependant structural transition, as confirmed by the low-temperature single crystal diffraction studies, together with the moderate value of ΔS points to the presence of a conventional magnetocaloric effect. Gd₅Si_3.5P_0.5 and Gd₅Si_3.25P_0.75, which are composites of the Gd₅Si₄- (all Si/P–Si/P dimers intact) and Sm₅Ge₄-type phases, possess two magnetic transitions associated with the two-phases. Introduction of P into Gd₅Si₄ lowers the Curie temperature from 336 K to 332 K in Gd₅Si_3.25P_0.75.     

Synthesis and single-crystal X-ray diffraction studies of new framework substituted type II clathrates, Cs8Na16AgxGe136−x (x<7)

New inorganic type II clathrates with Ag atoms substituting for framework Ge atoms, Cs₈Na₁₆Ag_xGe_136−x (x=0, 5.9, and 6.7), have been synthesized by reaction of the pure elements at high temperature. Structural refinements have been performed using single crystal X-ray diffraction. The materials crystallize with the cubic type II clathrate crystal structure (space group ) with a=15.49262(9) Å, 15.51605(6) Å, and 15.51618(9) for x=0, 5.9, and 6.7, respectively, and Z=1. The structure is formed by a covalently bonded Ag-Ge framework, in which the Cs and Na atoms are found inside two types of polyhedral cages. Ag substitutes for Ge in the tetrahedrally bonded framework positions, and was found to preferentially occupy the most asymmetric 96g site. The proven ability to substitute atoms for the germanium framework should offer a route to the synthesis of new compositions of type II clathrates, materials that are of interest for potential thermoelectrics applications.     

Synthesis,crystal structures and chemical bonding of RE5−xLixGe4 (RE = Nd,Sm and Gd; x≃ 1) with the orthorhombic Gd5Si4 type

The syntheses and single‐crystal and electronic structures of three new ternary lithium rare earth germanides, RE_5−xLi_xGe₄ (RE = Nd, Sm and Gd; x≃ 1), namely tetrasamarium lithium tetragermanide (Sm_3.97Li_1.03Ge₄), tetraneodymium lithium tetragermanide (Nd_3.97Li_1.03Ge₄) and tetragadolinium lithium tetragermanide (Gd_3.96Li_1.03Ge₄), are reported. All three compounds crystallize in the orthorhombic space group Pnma and adopt the Gd₅Si₄ structure type (Pearson code oP36). There are six atoms in the asymmetric unit: Li1 in Wyckoff site 4c, RE1 in 8d, RE2 in 8d, Ge1 in 8d, Ge2 in 4c and Ge3 in 4c. One of the RE sites, i.e. RE2, is statistically occupied by RE and Li atoms, accounting for the small deviation from ideal RE₄LiGe₄ stoichiometry.     

The Heusler phases LiRh2Si and LiRh2Ge: Synthesis, structure and properties

The isostructural Heusler phases LiRh₂Si and LiRh₂Ge have been synthesized from the elements and an excess of lithium at 1000 °C. Both materials adopt the CuMn₂Al crystal structure, space group Fm−3m (No. 225) with the room temperature lattice parameter a=5.747(1) Å [Vol=189.866(1) Å³] and a=5.847(1) Å [Vol=199.88(6) Å³] for LiRh₂Si and LiRh₂Ge, respectively. X-ray analyses suggest mixed site occupancy of the form Li_1−xRh₂Si_1+x (x<0.4), but not for LiRh₂Ge. Both materials are diamagnetic, χ_mol(LiRh₂Si)=−6×10⁻⁵ cm³(mole)⁻¹ and χ_mol(LiRh₂Ge)=−10×10⁻⁵ cm³(mole)⁻¹ and metallic with room temperature resistivities of approximately 19 and 32 μΩ cm, respectively. These properties are consistent with the calculated electronic structure.     

Phase equilibria in systems Ce-M-Sb (M=Si, Ge, Sn) and superstructure Ce12Ge9−xSb23+x (x=3.8±0.1)

Phase relations in the ternary systems Ce-M-Sb (M=Si, Ge, Sn) in composition regions CeSb₂-Sb-M were studied by optical and electron microscopy, X-ray diffraction, and electron probe microanalysis on arc-melted alloys and specimens annealed in the temperature region from 850 to 200 °C. The results, in combination with an assessment of all literature data available, were used to construct solidus surfaces and a series of isothermal sections. No ternary compounds were found to form in the Ce-Si-Sb system whilst Ce₁₂Ge_9−xSb_23+x (3.3<x<4.2) and CeSn_xSb₂ (0.1<x<0.8) participate in phase equilibria in the composition region investigated. Crystallographic parameters for the ternary compound Ce₁₂Ge_9−xSb_23+x (x=3.8±0.1) were determined from X-ray single crystal and powder diffraction. For the binary system Ge-Sb a eutectic was defined L⇔(Ge)+(Sb) at 591.6 °C and 22.5 at%. Ge EPMA revealed a maximal solubility of 6.3 at% Ge in (Sb) at the eutectic temperature.     

Phonons in isostructural (ND,Yb):YxGd1−x(VO4) laser crystals: A Raman scattering study

The room temperature phonon modes of the isostructural (Nd,Yb):Y_xGd_1−x(VO₄) laser crystals were determined using the Raman scattering technique, and the observed wavenumbers follow the overall mode distribution expected for REVO₄ (RE=rare earth) compounds with the tetragonal zircon structure, . They were assigned according to the group theory in terms of the internal modes of the VO₄ tetrahedron and the external modes of the Y_xGd_1−x(VO₄) lattice. No appreciable changes in the phonon wavenumbers were observed for Yb:GdVO₄ (Yb=0.008, 0.015, 0.020, 0.025, and 0.035), indicating that the force fields in the GdVO₄ lattice are not strongly altered by Yb doping at the Gd site. However, most of the phonon wavenumbers in the systems (Nd,Yb):Y_xGd_1−x(VO₄) shifts upwards (one-phonon-like behavior) when Y replaces for Gd.     

Synthesis and photoluminescence properties of the high-brightness Eu-doped M2Gd4(MoO4)7 (M=Li, Na) red phosphors

A series of red-emitting phosphors Eu³⁺-doped M₂Gd₄(MoO₄)₇ (M=Li, Na) have been successfully synthesized at 850 °C by solid state reaction. The excitation spectra of the two phosphors reveal two strong excitation bands at 396 nm and 466 nm, respectively, which match well with the two popular emissions from near-UV and blue light-emitting diode chips. The intensity of the emission from ⁵D₀ to ⁷F₂ of M₂(Gd_1−xEu_x)₄(MoO₄)₇ phosphors with the optimal compositions of x=0.85 for Li or x=0.70 for Na is about five times higher than that of Y₂O₃:Eu³⁺. The quantum efficiencies of the entitled phosphors excited under 396 nm and 466 nm are also investigated and compared with commercial phosphors Sr₂Si₅N₈:Eu²⁺ and Y₃A₅O₁₂:Ce³⁺. The experimental results indicate that the Eu³⁺-doped M₂Gd₄(MoO₄)₇ (M=Li, Na) phosphors are promising red-emitting phosphors pumped by near-UV and blue light.     

Substitution features in the isomorphous replacement series for metal-organic compounds (NbxTa1−x)4O2(OMe)14(ReO4)2, x=0.7, 0.5, 0.3—Single-source precursors of complex oxides with organized porosity

Trimetallic oxoalkoxide complexes (Nb_0.7Ta_0.3)₄O₂(OMe)₁₄(ReO₄)₂ (I), (Nb_0.3Ta_0.7)₄O₂(OMe)₁₄(ReO₄)₂ (II) and (Nb_0.5Ta_0.5)₄O₂(OMe)₁₄(ReO₄)₂ (III) were obtained by the interaction of rhenium heptoxide (VII) Re₂O₇ with niobium and tantalum alkoxides M₂(OMe)₁₀ (M=Nb, Ta) in toluene. The centrosymmetric molecules (I)-(III) can be considered as a product of condensation of two M₂(OMe)₉(OReO₃) molecules with the formation of two oxo-bridges. The specific feature of the structure is the uneven distribution of metal atoms in the crystallographic positions, where one symmetry-independent position, connected via μ-O with a perrhenate ReO₄⁻ group, is predominantly occupied by niobium atoms, while the other one connected via alkoxide groups has a higher tantalum content. The distribution of Nb and Ta in the structure is truly even only for compound III. The niobium and tantalum content is varied to a different extent for I (less) and for II (more), which is apparently due to small differences in the sizes of these two cations, resulting in preferences for packing of different molecules in the structures. Thermal decomposition of (Nb_1−xTa_x)₄O₂(OMe)₁₄(ReO₄)₂ (x=0.3, 0.5, 0.7) in air leads to the formation of crystalline species of solid solutions based on tantalum and niobium oxides displaying semi-ordered pores with the size of 100−250 nm. In the dry nitrogen atmosphere, the decomposition leads to the amorphous complex oxides containing rhenium, niobium and tantalum.     

Structural, spectroscopic and photoluminescence studies of LiEu(WO4)2−x(MoO4)x as a near-UV convertible phosphor

A series of lithium europium double tungsto-molybdate phosphors LiEu(WO₄)_2−x(MoO₄)_x (x=0, 0.4, 0.8, 1.2, 1.6, 2.0) have been synthesized by solid-state reactions and their crystal structure, optical and luminescent properties were studied. As the molybdate content increases, the intensity of the ⁵D₀→⁷F₂ emission of Eu³⁺ activated at wavelength of 396 nm was found to increase and reach a maximum when the relative ratio of Mo/W is 2:0. These changes were found to be accompanied with the changes in the spectral feature, which can be attributed to the crystal field splitting of the ⁵D₀→⁷F₂ transition. As the molybdate content increases the emission intensity of the 615 nm peak also increases. The intense red-emission of the tungstomolybdate phosphors under near-UV excitation suggests them to be potential candidate for white light generation by using near-UV LEDs. In this study the effect of chemical compositions and crystal structure on the photoluminescent properties of LiEu(WO₄)_2−x(MoO₄)_x is investigated and discussed.     

Synthesis and spectroscopic characterization of P-doped Na4Si4

Na₄Si₄ is a Zintl salt composed of Na⁺ cations and tetrahedral anions and is a unique solid-state precursor to clathrate structures and nanomaterials. In order to provide opportunities for the synthesis of complex materials, phosphorus was explored as a possible substituent for silicon. Phosphorus doped sodium silicides Na₄Si_4−xP_x (x≤0.04) were prepared by reaction of Na with the mechanically alloyed Si_4−x:P_x (x=0.04, 0.08, 0.12) mixture in a sealed Nb tube at 650 °C for 3 days. Energy dispersive X-ray spectroscopy confirms the presence of P in all products. Powder X-ray diffraction patterns are consistent with the retention of the Na₄Si₄ crystal structure. As the amount of P increases, a new peak in the diffraction pattern that can be assigned to black phosphorus is apparent above the background. Raman and solid-state NMR provide information on phosphorus substitution in the Na₄Si₄ structure. Raman spectroscopy shows a shift of the most intense band assigned to the ν₁ (A₁) mode from 486.4 to 484.0 cm⁻¹ with increasing P, consistent with P replacement of Si. Differential nuclear spin-lattice relaxation for the Si sites determined via ²⁹Si solid-state NMR provides direct evidence for Si-P bonding in the (Si_1−xP_x)⁴⁻ tetrahedron. The ²³Na NMR shows additional Na…P interactions and the ³¹P NMR shows two P sites, consistent with P presence in both of the crystallographic sites in the (Si₄)⁴⁻ tetrahedron.     

Synthesis, crystal structure and magnetic properties of the spin ladder compounds La2(Cu1−xZnx)2O5 and La8(Cu1−xZnx)7O19

The influence of Zn-doping on the crystal structure and magnetic properties of the spin ladder compounds La₂Cu₂O₅ (4-leg) and La₈Cu₇O₁₉ (5-leg) have been investigated. The La₂(Cu_1−xZn_x)₂O₅ and La₈(Cu_1−xZn_x)₇O₁₉ solid solutions were obtained as single phases with x=0-0.1 via the solid-state reaction method in the temperature range between 1005-1010 °C and 1015-1030 °C in oxygen and air atmospheres, respectively. The lattice parameters a and c of the monoclinic crystal structures as well as the unit cell volume V increase with increasing x, while b and β decrease for both series. The magnetic susceptibilities χ of both series show a very similar behavior on temperature as well as on Zn-doping, which is supposed to be due to the similar Cu-O coordination in both La₂Cu₂O₅ and La₈Cu₇O₁₉. For low Zn-doping (x?0.04), a spin-chain like behavior is found. This quasi-one-dimensional behavior is strongly suppressed in both series for x?0.04. Here, the maximum (characteristic for spin chains) in χ(T) disappears and χ(T) decreases monotonically with increasing temperature.     

The Crystal Chemistry of Lithium in the Alluaudite Structure: A Study of the (Na1−xLix)CdIn2(PO4)3 Solid Solution (x=0 to 1)

Several compounds of the (Na_1−xLi_x)CdIn₂(PO₄)₃ solid solution were synthesized by a solid-state reaction in air, and pure alluaudite-like compounds were obtained for x=0.00, 0.25, and 0.50. X-ray Rietveld refinements indicate the occurrence of Cd²⁺ in the M(1) site, and of In³⁺ in the M(2) site of the alluaudite structure. This non-disordered cationic distribution is confirmed by the sharpness of the infrared absorption bands. The distribution of Na⁺ and Li⁺ on the A(1) and A(2)′ crystallographic sites cannot be accurately assessed by the Rietvled method, probably because the electronic densities involved in the Na⁺→Li⁺ substitution are very small. A comparison with the synthetic alluaudite-like compounds, (Na_1−xLi_x)MnFe₂(PO₄)₃, indicates the influence of the cations occupying the M(1) and M(2) sites on the coordination polyhedra morphologies of the A(1) and A(2)′ crystallographic sites.     

The crystal structure of hexathallium(I) hexatellurodigermanate(III), Tl6[Ge2Te6]

The new compound Tl₆[Ge₂Te₆] was prepared by thermal synthesis from the elements. The material is triclinic, space group $\text{P}\text{1}$, with a = 9.471(2), b = 9.714(2), c = 10.389(2) Å, α = 89.39(1), β = 97.27(1), γ = 100.79(1)°, and Z = 2. The crystal structure was determined from single-crystal intensity data measured by means of an automated four-circle diffractometer and refined to an R value of 0.053 for 1831 observed reflections. Tl₆[Ge₂Te₆] is characterized by Ge₂Te₆ units with GeGe bonds which are linked into a three-dimensional structure by Tl atoms coordinated to essentially six Te atoms. The most important mean distances are $\text{d}\text{GeGe}\text{) = 2.456}$ Å, $\text{d}\text{(}\text{GeTe}\text{) = 2.573}$ Å, and $\text{d}\text{(}\text{TlTe}\text{) = 3.515}$Å. The lone 6s electron pairs of the thallium(I) atoms exhibit significant stereochemical activity. Tl₆[Ge₂Te₆] represents a new structure type.