Ω型分子筛脱铝的核磁共振研究

在不同投料比（ＳｉＯ２／Ａｌ２Ｏ３＝１３．８，１９及２１）条件下，合成了三种Ω型分子筛原粉．对投料比为１３．８的原粉样品进行了四种不同方式的脱铝处理，即水热、ＳｉＣｌ４、ＥＤＴＡ和（ＮＨ４）２ＳｉＦ６处理，而形成了系列脱铝Ω型分子筛样品．对原粉及其脱铝样品进行了２９Ｓｉ和２７ＡｌＭＡＳＮＭＲ测试，确定出样品骨架硅铝比和铝在两种晶体学不等价Ｔ位上的占据比率，以探索四种脱铝方法的效果．实验结果与分析表明：在所有样品中，铝原子的占据具有择优Ｂ位的倾向；且铝在ＴＡ与ＴＢ位上的占据比率与合成条件有关；四种处理方式对Ω型分子筛的脱铝效果不尽相同．     

铝在MCM-22分子筛骨架上分布的27Al MQ MAS NMR研究

利用二维多量子魔角旋转（2D MQ MAS）技术并结合量子化学计算，研究了铝在MCM-22分子筛骨架上的分布，并对铝的不等价四面体位进行了归属.在27Al 2D 5Q MAS NMR谱中骨架四配位铝的范围内观察到3个信号，证明MCM-22分子筛有3种骨架铝.经计算这3种骨架四配位铝的各向同性化学位移和四极作用常数分别为：δ 50.5、δ 57.3、δ 62.4和1.74、1.68、1.92 MHz. MCM-22分子筛结构中有8种结晶学不等价四面体（T）位.我们通过模拟MCM-22分子筛的27Al 2D 5Q MAS NMR谱，认为8种不等价T位分为3组. T2、T6位上的铝分别与δ 61、δ 49处的信号相关， T1、T3、T4、T5、T7、T8位上的铝对δ 56处的共振峰有贡献.当硅铝原子数比(Si/Al)在10～15之间变化时，铝在MCM-22分子筛的骨架上是无规占据的.     

钛硅分子筛中铝杂质对其性能的影响

 以四丙基溴化铵为模板剂,以硅溶胶为硅源,采用水热合成法制备了不同铝杂质含量的钛硅分子筛,并系统考察了铝杂质对钛硅分子筛性能的影响．结果表明,原料中的铝杂质可促进钛硅分子筛晶化,但同时也引入了酸性中心;在丙烯环氧化反应中,铝杂质形成的酸性中心会催化环氧丙烷与溶剂的副反应;加入少量碱性添加物可抑制铝杂质的酸催化作用,提高环氧丙烷的选择性,但过量碱性添加物会使钛硅分子筛失活．     

低硅铝比ZSM-5分子筛上C4烃的催化裂解反应

以低硅铝比(n(SiO2)/n(Al2O3)=20-45)的ZSM-5分子筛为催化剂, 研究了混合C4烃的催化裂解反应, 并对不同硅铝比的ZSM-5分子筛进行了酸性表征. 混合C4烃的催化裂解反应结果表明, 低硅铝比的ZSM-5分子筛具有较高的低温催化活性, 高硅铝比ZSM-5分子筛催化剂上乙烯和丙烯的收率高于低硅铝比ZSM-5分子筛催化剂, 低硅铝比ZSM-5分子筛上苯和甲苯的收率高于高硅铝比ZSM-5分子筛催化剂. 在反应温度为625 ℃时, 硅铝比为20的ZSM-5分子筛催化剂上乙烯、丙烯、苯和甲苯的总收率可达79.42%. 酸性表征结果表明, 硅铝比低的ZSM-5分子筛具有更多的Bronsted(B)酸酸量、Lewis(L)酸酸量及总酸酸量, 这是低硅铝比ZSM-5分子筛具有低温高活性及高的苯和甲苯收率的原因.     

低硅铝比ZSM-5分子筛上C4烃的催化裂解反应

以低硅铝比(n(SiO2)/n(Al2O2)=20-45)的ZSM-5分子筛为催化剂,研究了混合C4烃的催化裂解反应,并对不同硅铝比的ZSM-5分子筛进行了酸性表征.混合C4烃的催化裂解反应结果表明,低硅铝比的ZSM-5分子筛具有较高的低温催化活性,高硅铝比ZSM-5分子筛催化剂上乙烯和丙烯的收率高于低硅铝比ZSM-5分子筛催化剂,低硅铝比ZSM-5分子筛上苯和甲苯的收率高于高硅铝比ZSM-5分子筛催化剂.在反应温度为625℃时,硅铝比为20的ZSM-5分子筛催化剂上乙烯、丙烯、苯和甲苯的总收率可达79.42%.酸性表征结果表明,硅铝比低的ZSM-5分子筛具有更多的Bronsted(B)酸酸量、Lewis(L)酸酸量及总酸酸量,这是低硅铝比ZSM-5分子筛具有低温高活性及高的苯和甲苯收率的原因.     

以胆碱为绿色无毒有机结构导向剂合成高硅Y型分子筛

分子筛作为一类重要的无机多孔晶体材料,由于其规整的孔道结构以及优异的酸性质等特点,在催化剂、吸附剂和离子交换床等许多领域有着重要而广泛的应用.而现代分子筛制备方法的发展主要得益于有机结构导向剂(OSDA)在分子筛合成中的广泛使用.但是,大部分OSDA都具有剧毒、价格昂贵、制备方法繁琐等缺点,因而限制了其大规模应用.高硅Y型分子筛的合成研究也面临同样的问题.Y型分子筛具有十二元环孔口和三维孔道结构,是目前催化裂化催化剂中的主要活性组分.目前,通过常规合成方法无法获得硅铝比大于6.0的Y型分子筛,无法满足石油化工对其酸性的要求.目前工业上主要通过后处理法得到高硅Y沸石,但该方法繁杂的后处理过程、不均匀的化学分布、大量损失的结晶度以及严重的环境污染促使人们开发直接合成高硅Y型分子筛的新方法以替代后处理过程.此外,使用OSDA一步法合成的高硅铝比Y型分子筛具有优异的热和水热稳定性.因此,使用OSDA一步直接合成高硅Y型分子筛在材料合成和催化领域一直备受关注.然而,目前尚未见关于绿色OSDA用于高硅Y型分子筛合成的报道.本研究首次将氢氧化胆碱或氯化胆碱作为一种新型、绿色、廉价的OSDA引入到高硅Y分子筛的合成凝胶体系,成功合成了高结晶度且硅铝比大于6.0的高硅Y型分子筛.实验详细考察了合成条件对硅铝比的影响,并采用XRD, XRF, NMR,TG以及N2物理吸附等表征手段研究了合成样品的物理化学性质.表征结果证明,胆碱阳离子作为一个稳定的OSDA存在于分子筛的孔结构中,并且取代了部分Na~+以平衡分子筛骨架的负电荷,因此胆碱的使用可使样品的硅铝比提高并具有更加优异的热稳定性和水热稳定性.实验确定了Na~+和OSDA~+在高硅Y分子筛合成中的竞争关系.大量的实验证据表明, Na~+进料比例对FAU骨架硅铝比有决定性的影响.首次提出采用氢氧根离子型OSDA是一种直接有效提高骨架硅铝比的方法.     

硼改性Ag—2型分子筛及其对邻二甲苯异构化催化性能的研究

Ａｇ－２型分子筛骨架渗入硼部分取代Ａｌ位，提高硅铝比，得到减少次邻近铝数目的硅铝排布的Ａｇ—２分子筛。ＮＨ３－ＴＰＤ和邻二甲苯异构化催化反应，表明硼改性Ａｇ－２型分子筛的酸性强度增高，且保持了分子筛晶体的完整性。骨架具有次邻近铝排布的分子筛常是通过脱铝或脱铝补硅改性，减少次邻近铝的数目来提高其酸性强度。脱铝改性会造成晶体不完整或部分骨架塌陷。在分子筛合成时，掺硼容易进入分子筛骨架部分的取代Ａｌ位，提高硅铝比，形成分子筛骨架减少次邻近铝Ａｌ排布的硼改性分子筛，提高其酸性强度，是本文报道的主要内容。Ａｇ—２型分子筛属于六方晶系，具有大孔道结构［１］，合成的Ａｇ—２型分子筛Ｓｉ／Ａｌ可以从３．２调配到１４，利用调配合成不同硅铝比样品与掺硼改性分子筛样品进行酸性强度和邻二甲苯异构化催化性能比较，来阐明掺硼改性Ａｇ—２型分子筛酸性强度的变化。     

Li~+改性低硅铝X型沸石分子筛的研究进展

本文详细介绍了低硅铝沸石分子筛(LSX)的结构和性能,重点阐述了锂交换低硅铝沸石分子筛(Li-LSX)的锂化原理和锂化方法以及近年来的研究进展,并简要介绍了Li-LSX分子筛的主要用途.     

SAPO分子筛的酸性及其孔道分布对丁烷异构脱氢反应的影响

 合成了四种磷铝及硅磷铝系列分子筛,并用XRD表征了分子筛的晶体结构,用X荧光光谱测定了其元素组成,用NH3－TPD和物理吸附考察了其酸性和孔道分布．考察了以合成的分子筛为基质制备的催化剂上丁烷异构脱氢反应的性能．结果表明,以弱酸性的SAPO－5分子筛和孔口狭窄的SAPO－34分子筛为载体的催化剂,它们的催化性能较差;以十元环的SAPO－11分子筛为载体的催化剂显示出较高的活性和选择性．同时,考察了不同分子筛催化剂上Pd金属粒子的分散状态,分析了分子筛的酸性和孔道结构对反应性能的影响．     

硅源对MCM-22分子筛合成及物化性质的影响

在动态水热条件下,研究了硅溶胶、白炭黑、硅酸及硅胶为硅源时对MCM-22分子筛合成及物化性质的影响。以硅溶胶、白炭黑、硅酸三种硅源均可合成出高结晶度且无杂晶的片状MCM-22分子筛,其平均粒径分别为190、220和750 nm。硅源影响分子筛的聚集形态,三种硅源分别形成晶粒分散、晶粒半分散及晶粒聚集形态。三组样品的酸强度分布基本一致,都具有较多的中强酸分布,由硅溶胶和硅酸所得MCM-22分子筛在中强酸范围具有更高的B/L酸比值,以白炭黑合成的分子筛总酸量最高。NMR结果表明,样品中的铝以骨架铝为主,不存在明显的非骨架铝。由于硅胶对合成体系中游离水的吸附作用,水热反应难以发生,不能得到MCM-22分子筛,硅胶作为分子筛合成硅源时需要选择合适的反应条件。     

Mathematical Analysis of the Formation of Molecule Sizes on a Spinning Disc Reactor

A mathematical analysis of the behaviour of the molecular weights of addition polymers during a polymerisation process is described. Spinning disc reactor (SDR) technology has been shown to yield significant improvements in terms of polymerisation rates whilst retaining close control of the molecular weights and the molecular weight distributions^[1,2]. However, understanding of the kinetics of the polymerisation process on a SDR remains unresolved. One of the questions to be addressed concerns the sizes of the macromolecules preferably formed during the polymerisation process. To address this question, a mathematical analysis of the observed trends in number and weight average molecular weight, monomer concentration and polydispersity during the polymerisation process on a SDR has been undertaken. To validate the results, experimental data obtained from benzoyl peroxide initiated free radical polymerisation of styrene on a SDR^[2] was used. It was concluded that most of the monomers consumed are in the growth of smaller size chains.     

Molecular modeling of the structure and dynamics of the interlayer species of ZnAlCl layered double hydroxide

Molecular dynamics simulations of the ZnAl layered double hydroxide containing interlayer chloride anions have been performed in the NpT and Np(zz)T statistical ensembles for metal Zn/Al ratios of 2 and 3. We have monitored the interlayer spacing as a function of the number of intercalated water molecules for each statistical ensemble. We have studied how these profiles are affected by the method of calculation of the charges of the hydroxide layer atoms. Diffusion coefficients of the interlayer water molecules have been calculated for different Zn/Al ratios. The calculation of the chemical potential of the interlayer water molecules has been carried out for three amounts of interlayer water molecules. The calculation showed a qualitative agreement with the bulk water chemical potential within a range of interlayer water molecule contents.     

Phase range of the type-I clathrate Sr8Al(x)Si(46-x) and crystal structure of Sr8Al10Si36

Samples of the type-I clathrate Sr(8)Al(x)Si(46-x) have been prepared by direct reaction of the elements. The type-I clathrate structure (cubic space group Pm3n) which has an Al-Si framework with Sr(2+) guest atoms forms with a narrow composition range of 9.54(6) ≤ x ≤ 10.30(8). Single crystals with composition A(8)Al(10)Si(36) (A = Sr, Ba) have been synthesized. Differential scanning calorimetry (DSC) measurements provide evidence for a peritectic reaction and melting point at ～1268 and ～1421 K for Sr(8)Al(10)Si(36) and Ba(8)Al(10)Si(36), respectively. Comparison of the structures reveals a strong correlation between the 24k-24k framework sites distances and the size of the guest cation. Electronic structure calculation and bonding analysis were carried out for the ordered models with the compositions A(8)Al(6)Si(40) (6c site occupied completely by Al) and A(8)Al(16)Si(30) (16i site occupied completely with Al). Analysis of the distribution of the electron localizability indicator (ELI) confirms that the Si-Si bonds are covalent, the Al-Si bonds are polar covalent, and the guest and the framework bonds are ionic in nature. The Sr(8)Al(6)Si(40) phase has a very small band gap that is closed upon additional Al, as observed in Sr(8)Al(16)Si(30). An explanation for the absence of a semiconducting "Sr(8)Al(16)Si(30)" phase is suggested in light of these findings.     

The inner-sphere reorganization energies for AH2 + AH (A = Al,Si, P,S) electron self-exchange reactions in electron-transfer processes from ab initio calculations

This article presents an application of the accurate calculation scheme proposed recently for the inner-sphere reorganization energies of molecules of the type AH₂ (A = Al, Si, P, and S). A reasonable extension has been made. The inner-sphere reorganization energies for the title thermal electron self-exchange reactions are calculated in terms of ab initio MO self-consistent field method (HFSCF ) at different basis-set levels (6-31G **, 6-31 + G **, DZ , and DZP ) and the involved parameters are also determined. These calculated results have been calibrated by comparing optimized molecular geometrical parameters and corresponding energy properties with the experimental findings or other theoretical values. An approximation, in which the contribution from the bond length–bond angle to the potential energy surface is neglected, is adopted in constructing the calculation formulas via the function model. Its adequacy is discussed. Agreement among different calculation schemes is analyzed. © 1995 John Wiley & Sons, Inc.     

β分子筛中Brønsted酸分布及酸性强度的量子化学ONIOM 理论计算研究

基于量子化学ONIOM [B3LYP/6-31G(d,p):UFF]计算方法, 研究了β分子筛中Brønsted酸的落位及其酸性强度. 计算采用22T簇模型, 得到了不同酸性位的(Al, H)/Si替代能和质子亲和势. 研究结果表明, Brønsted酸最有可能落位在Al(8)-O(11)-Si(4), Al(8)-O(4)-Si(1), Al(7)-O(7)-Si(2)和Al(9)-O(6)-Si(3)位置. 根据去质化能的计算, Al(7)-O(7)-Si(2)位置的酸性最强, Al(8)-O(11)-Si(4)的酸性最弱. 酸性的强弱顺序为Al(7)-O(7)-Si(2)＞Al(9)-O(6)-Si(3)＞Al(8)-O(4)-Si(1)＞Al(8)-O(11)-Si(4).     

β分子筛中BrΦnsted酸分布及酸性强度的量子化学ONIOM理论计算研究

基于量子化学ONIOM [B3LYP/6-31G(d,p):UFF]计算方法,研究了β分子筛中BrΦnsted酸的落位及其酸性强度.计算采用22T簇模型,得到了不同酸性位的(Al,H)/Si替代能和质子亲和势.研究结果表明,BrΦnsted酸最有可能落位在Al(8)-O(11).Si(4),Al(8)-O(4)-Si(1),Al(7)-O(7)-Si(2)和Al(9)-O(6)-Si(3)位置.根据去质化能的计算,Al(7)-O(7)-Si(2)位置的酸性最强,A1(8)-O(11)-Si(4)的酸性最弱.酸性的强弱顺序为Al(7)-O(7)-Si(2)＞Al(9)-O(6)-Si(3)＞Al(8)-0(4)-Si(1)＞Al(8)-O(11)-Si(4).     

多溴代芴热力学性质的理论预测研究

为了预测环境污染物多溴代芴的热力学性质,计算了60种多溴代芴的分子连接性指数、电性距离矢量指数、电性拓扑状态指数以及分子形状指数.采用多元线性回归的方法建立了多溴代芴化合物的标准生成焓(Δ_fH~0)、标准熵(S~0)、标准生成吉布斯自由能(Δ_fG~0)及等容热容等热力学性质的QSPR相关性模型,方程的相关系数值均在0.99以上.与相关文献的相关系数R和标准误差S进行比较,该模型具有良好的预测能力和稳定性.     

Characterization of the malate-aluminum(III) complex using 1H and 27Al NMR spectroscopy

Structural elucidation of a malate-aluminum(III) complex has been carried out using 1H and 27Al NMR spectroscopy. The 1H chemical shift perturbation clearly indicated the interaction between malate and Al(III) ion. The measurements of 27Al NMR and 1H-13C HSQC spectra demonstrated that the major form of a complex comprised two equivalent malate ions and two unequivalent Al(III) ions. With this constraint, an equilibrium geometry of the complex was proposed by a semi-empirical molecular orbital calculation.     

Recent developments in ESR techniques and results for semiconductor surface regions

In recent years new electron spin resonance (ESR)-based techniques have been developed, mostly with application to silicon-oxide interface regions. In this article we give the first full theoretical analysis for these techniques, namely photoconductive resonance (PCR) and spin dependence resonance (SDR), and a summary of results obtained to date. We also refer to some other recent ESR work on semiconductor surfaces including crystalline and amorphous hydrogenated silicon.Both PCR and SDR have sensitivities up to 2 orders of magnitude greater than ESR but are confined to samples where paramgnetic centers induced by incident light, affect the photoconductivity. This occurs through trapping and recombination processes. A number of different PCR and SDR centers have been found at silicon oxide interface regions, which were undetectable by normal ESR measurements. The PCR centers appear to be related to effects of water vapor, and occur in concentrations of order 10¹⁰ cm^-2 of oxide interface. In the case of SDR centers, they appear to be formed in the oxide and diffuse through it to the silicon interface, being also of low concentration and associated with impurity groups, whereas the centers directly detectable by ESR appear to be unfilled Si bonds.     

First principles study of adsorption of O2 on Al surface with hybrid functionals

Adsorption of O(2) molecule on Al surface has been a long standing puzzle for the first principles calculation. We have studied the adsorption of O(2) molecule on the Al(111) surface using hybrid functionals. In contrast to the previous local-density approximation/gradient-corrected approximation, the present calculations with hybrid functionals successfully predict that O(2) molecule can be absorbed on the Al(111) surface with a barrier around 0.2-0.4 eV, which is in good agreement with experiments. Our calculations predict that the lowest unoccupied molecular orbital of O(2) molecule is higher than the Fermi level of the Al(111) surface, which is responsible for the barrier of the O(2) adsorption.