多孔硅镶嵌正丁胺/激光染料复合膜的荧光谱

多孔介质染料镶嵌膜有可能是发展固体染料激光器的一种途径[1].由于其所具有的微孔结构和大的比表面积,故使其成为激光染料理想的载体,以形成多孔硅基发光材料[2].　　我们用正丁胺作碳源,采用射频辉光(ＲＦ)放电法制备碳膜.利用正丁胺、Ｒ6Ｇ/聚乙二醇分别作碳源和蒸发源得到一种混合膜,如将其沉积在刚制备的新鲜多孔硅上则得到多孔硅镶嵌复合膜.本文着重研究了镶嵌于多孔硅中的正丁胺/Ｒ6Ｇ的荧光光谱,并考察了多孔硅衬底的改变对多孔硅镶嵌膜发光的影响.1　样品制备　　(1)多孔硅的制备　制备多孔硅(ＰＳ)所用的材料为(100)晶向的ｐ型单…     

化学氧化对多孔硅表面态和光致发光的影响

自1990年英国科学家Canham发现室温下多孔老（poroussilicon缩写为PS）的可见光区光致发光以来，在世界范围内迅速形成了一股强大的多孔硅研究热．硅是间接禁带半导体．禁带宽度为1．11eV，不可能在可见区发光．对于多孔硅在可见区的强烈荧光发射及其形成，Canham和Lehamm等分别建议可用量子线的尺寸限制效应未解释[1,2]．但Tsai和Hance等用FTIR研究经过后处理的多孔老样品[3]，认为多孔硅的发光与表面的硅氢化物相关，并提出硅的二氢化物SiH2的浓度与荧光强度相关．关于多孔硅的发光机制，还有非晶态发光[4]等说法．因止匕多孔硅的发…     

多孔硅和掺镨多孔硅的光致发光

多孔硅在室温下发出光致荧光展现了硅用作光电子材料和显示技术材料的前景。掺入希土元素可以改善硅的发光性能。本文首次报道多孔硅掺希土的一种新的电化学掺杂方法——恒电位电解,和一种希土硝酸盐-支持电解质-有机溶剂的新电解体系。这一方法和体系的特点是通过采用适当外加电压来控制电解产物,提高掺入的希土浓度,提高发光强度;同时可避免析出使发光不稳定的产物,提高发光稳定性。优化了阳极氧化制备多孔硅的条件和阴极还原制备掺镨多孔硅的条件(镨化合物浓度、溶剂、离子强度、电解电压、时间),获得了光致发光强度高于多孔硅的掺镨多孔硅,并讨论了多孔硅和掺镨多孔硅的光致发光机制。     

发光多孔硅表面的STM研究

自从Canham首次报道了室温下多孔硅的光致发光现象以来^[1],多孔硅已成为半导体光电化学及材料领域内最为热门的研究课题^[2].     

n型多孔硅的电发光性能及其XPS和LIMA表征

ｎ型多孔硅的电发光性能及其ＸＰＳ和ＬＩＭＡ表征①李国铮＊张承乾张强（山东大学化学系，济南２５０１００）（厦门大学化学系，厦门３６１００５）多孔硅（ＰＳ）的发光性能与其化学组成和结构的关系已为人们所关注．曾有人认为，发光是由于纳米级多孔硅的量子限制效应...     

阳极氧化与超临界干燥结合制备多孔硅

多孔硅（PS）在室温下发射强可见光，这一发现在国际上引起极大关注，成为材料科学、半导体物理和化学以及信息科学领域研究的热点［1，2］．最近三、四年，国内外对PS制备工艺、影响PS发光的因素、PS发光机制、PS应用前景等方面进行了广泛的研究［2］，但有一些基本问题仍待解决，如关于PS发光机制尚存在分歧；PS电致发光效率低，离应用差距甚远；高多孔度PS微孔结构不稳定等．PS微孔内溶剂蒸发过程中，由于毛细管张力的存在，造成微孔骨架受力不匀．强的应力使PS骨架脆弱，甚至微孔结构坍缩，从而导致PS结构不稳定．对于高多孔度…     

恒电位电解法制备光致发光掺钬多孔硅

研究了一种新的多孔硅掺稀土的电化学方法———恒电位电解，以及稀土硝酸盐支持电解质有机溶剂的新电解体系。这一方法和体系的特点是通过采用适当外加电压来控制电解产物，提高掺入的稀土浓度，提高发光强度，同时避免生成导致发光不稳定的产物，提高发光稳定性。优化了阳极氧化制备多孔硅的条件和阴极还原制备掺钬多孔硅的条件（钬化合物浓度、溶剂、离子强度、电解电压、时间），获得光致发光强度高于多孔硅的掺钬多孔硅。对多孔硅和掺钬多孔硅的光致发光机制进行了讨论。     

发光多孔硅的光谱及电化学研究

单晶硅是E_g为1.1eV的间接带隙半导体材料,在可见光区不发光,不能应用于光电子领域.但是,Canham 1990年首次发现^[1],适当条件下形成的多孔硅在室温下就可发出强度能与Ⅲ-Ⅴ族半导体发光二极管相媲美的可见光。     

发光多孔硅的化学传感特征

发光多孔是一种新型的光电器件材料。其荧光的猝灭或增敏，以及其电学特性的变化可作为化学伟感信息用于电化学传感技术。本文评述了自发光多孔硅首次报道以来在化学传感领域的应用研究进展。     

Er3+、In3+等金属离子对多孔硅光致发光性质的影响

用阳极腐蚀的方法制备了多孔硅样品,用电化学方法在多孔硅中注入Er3+、In3+等金属离子,并对注入离子后多孔硅的光致荧光光谱进行了研究,结果表明：注入Er3+及In3+后的多孔硅在588nm处的发光峰强度大大增加,同时发光峰稍有展宽。随着离子注入时间的增长,强度继续增加,但当离子溶液浓度一定时,这种增强对时间具有饱和性。     

Characterization of thermal properties of porous silicon film/silicon using photoacoustic technique

We have applied photoacoustic (PA) technique to study the thermal properties of porous silicon (PS) films formed on p-type Si substrates by electrochemical anodic etching. Four PS samples with close thicknesses but greatly different porosities (from 20 to 60%) were examined. From the dependences of the PA signals on the modulation frequency of excitation light measured under a transmission detection configuration (TDC), effective thermal diffusivities for the two-layered PS/Si samples were determined and found to decrease greatly from 0.095 to 0.020 cm² s^-1 as the porosity increased from 20 to 60%. This revised version was published online in August 2006 with corrections to the Cover Date.     

Controllable porous fluorinated polyimide thin films for ultralow dielectric constant interlayer dielectric applications

In this paper, silica microspheres were used as template to prepare porous fluorinated polyimide (FPI) thin films from polyamic acid (PAA, precursor of FPI) and silica colloid solution. The strong hydrogen-bonding interaction between silica microspheres and PAA chains have improved the dispersion of silica microspheres in N,N-Dimethylformamide (DMF) solution, resulting in the high weight content of silica template in PAA/silica colloid solution, and thus giving rise to the formation of porous FPI films with maximum porosity of 35%. The interior microstructures of the resultant porous FPI thin films were investigated. It is found that the porous FPI thin films have interconnected “ink-bottle-type” porous structure, and the pore size, porosity could be precisely controlled by the diameter and weight content of silica microspheres, respectively. Although both the tensile strength and young modules declined with the increasing porosity, the high level void of the porous FPI films endowed the FPI ultralow dielectric constant of 1.84 when the porosity increased to 35%. Furthermore, the mechanical and dielectric properties of the porous FPI films were closely related to the microstructures and porosity, indicating the desired properties could be controlled to meet the application in the microelectronics.     

硅基多孔氧化铝膜的整体发光及其化学修饰

利用电子束蒸发技术在硅衬底上沉积了500nm厚的铝膜，分别在硫酸、磷酸和 草酸中通过阳极氧化技基多孔氧化铝模板通过透射电镜（TEM）观测了形貌，并测 定了它们的光致发光光谱（PL）．结果表明利用不同的酸性质得到的多孔氧化铝模 板的发光现象是不完全相同的．基于这种思路，采用了其它的酸性电解质磺基水杨 酸或在酸性电解质中预先加人有机荧光物质罗丹明6G，得到了不同发光特性的硅基 多孔氧化铝膜．结合过去的理论，对上述荧光光谱的来源以及变化进行了讨论．多 孔氧化铝的发光一般都来自于与氧空位有关的缺陷态F~+，但它的复合过程会受到 体系中质能级或其它发光物质的影响．来自电解质中的物质在阳极氧化的过程中会 参与氧化铝膜的形成，进而改变氧化铝膜的成分，并影响其发光过程．     

Charge transfer on porous silicon membranes studied by current-sensing atomic force microscopy

A visible rectification effect on the current-voltage curves of metal/porous silicon/p-silicon has been observed by current-sensing atomic force microscopy. The current-voltage curves of porous silicon membranes with different porosities, prepared through variation of etching current density for a constant time, indicate that a higher porosity results in a higher resistance and thus a lower rectification, until the current reaches a threshold at a porosity 〉55%. We propose that the conductance mode in the porous silicon membrane with porosities 〉55% is mainly a hopping mechanism between nano-crystallites and an inverse static electric field between the porous silicon and p-Si interface blocks the electron injection from porous silicon to p-Si, but with porosities ≤55%, electron flows through a direct continuous channel between nano-crystallites.     

Low Temperature Sol-Gel Preparation of Nanocrystalline TiO2 Thin Films

TiO₂ nanocrystalline thin films with varying degree of porosity have been prepared using a low temperature method. TiO₂ films of the anatase form have been obtained by using a polyethylene glycol (PEG) modified sol-gel method. Densification and crystallization of the films was found to result from the thermal treatment of the dip coated films in boiling water. The films have been characterized by Raman, XRD, FTIR, AFM and optical methods. Highly transparent films with transmission in excess of 85% and porosity as high as 58% are formed predominantly of anatase crystallites of dimensions of the order of 5 nm. Initial results on lithium intercalation into these films resulting in an efficient optical modulation in the visible and near infrared regions demonstrate a good potential of these films for electrochromic applications.     

Effect of precipitants on polymer film porosity

IR spectroscopy and electron microscopy have been employed to study the effect of precipitants on the formation of porous structures in poly(vinyl alcohol)-based and modified polyacrylonitrile-based polymer films prepared by the wet casting method. Conditions for formation of porous structures in the polymer films are established as depending on parameters of solubility and pH of precipitants. The spectral method is tested for studying porosity of polymer materials in near and medium IR regions.     

多孔硅镶嵌正丁胺/激光染料复合膜的荧光谱

The photoluminescence (PL) of the compound films made by implanting n-butylamine/ Rhodamine into the porous silicon films was studied. Comparison and discussion of the difference of PL of the compound films and the dyes were carried out. The PL of the compound films with different substrates was measured.     

Enhancement and stabilization of the photoluminescence from porous silicon prepared by Ag‐assisted electrochemical etching

In this paper, we present the results of studies on the photoluminescence (PL) of porous silicon (PSi) samples obtained by etching with the assistance of silver metal in different ways. If the Si sample, after being coated with a layer of silver nanoparticles, is electrochemically etched, its PL intensity becomes hundreds of times stronger than the PL intensity when it is chemically etched in the similar conditions. The difference in the PL intensities is explained partly by the anodic oxidation of silicon which occurs during the electrochemical etching process. The most obvious evidence that silicon had been oxidized anodically in the electrochemical etching process is the disappearance of the PSi layer and the appearance of the silicon oxide layer with mosaic structure when the anodization current density is large enough. The anodic oxidation has the effect of PSi surface passivation. Because of that, the PL of obtained PSi becomes stronger and more stable with time. Copyright © 2012 John Wiley & Sons, Ltd.     

Silver porous nanotube built three-dimensional films with structural tunability based on the nanofiber template-plasma etching strategy

A facile and high-throughput strategy is presented to fabricate three-dimensional (3D) hierarchically porous Ag films, with clean surfaces, via plasma etching Ag-coated electrospun nanofiber template. The films are built of Ag porous nanotubes and are homogeneous in macro-size but rough and porous in nanoscale. Each nanotube-block is micro/nanostructured with evenly distributed nanopores on the tube walls. The film architecture (or the shape, arrangement, and distribution density of porous nanotubes; the number and size of nanopores) can be easily controlled by the nanofiber-template configuration, Ag coating, and plasma etching conditions. Such hierarchically porous films could be very useful, such as in catalysis, sensors, and nanodevices. They have exhibited significantly structurally enhanced surface-enhanced Raman scattering performance with good stability and reproduction, and shown the possibility of molecule-level detection. Also, the strategy is universal for fabricating other hierarchically structured 3D metal porous films, such as porous Ag hollow sphere arrays.