Relaxation oscillations and damping factors of 1.3 μm In(Ga)As/GaAs quantum-dot lasers

In(Ga)As/GaAs quantum-dot (QD) lasers with emission wavelength at 1295 nm at room temperature are fabricated. The laser active region contains a threefold stack of QD layers with surface dot density of 4.56 × 10¹⁰ cm^–2. The laser structure is aluminum-free with InGaP as cladding layers. Threshold current density of a narrow stripe laser of 8 m wide and 3.5 mm long is 152.5 A/cm². The highest relaxation oscillation frequency measured at room temperature is 1.8 GHz, corresponding to a modulation bandwidth of 2.8 GHz due to the small damping factor. From the above measurement, the differential gain and gain compression factor were extracted to be 4.3 × 10^–16 cm² and 3.4 × 10 ^–17 cm ³, respectively. Using these parameters, the maximum modulation bandwidth f _{3 dB max} is estimated as 7.9 GHz.     

Frequency-stabilized seed laser system for dial applications around 0.94 μm

Absolute frequency stabilization of an extended-cavity diode laser at 0.94 μm is reported. The diode laser was frequency locked against rovibrational absorption lines of water vapour by using the frequency modulation spectroscopy technique. The stabilized oscillator shows a short-term frequency stability level of 40 kHz for integration times of 1 s and a long-term frequency drift lower than 10 MHz for observation times longer than 10³ s. The frequency-stabilized oscillator system is mounted on a compact breadboard (75 cm×50 cm) and constitutes the seed laser system for the injection of a high-energy DIAL laser transmitter operating in the 0.94-μm spectral region.     

Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach

We present the fabrication process and experimental results of 850-nm oxide-confined vertical cavity surface emitting lasers (VCSELs) fabricated by using dielectric-free approach. The threshold current of 0.4 mA, which corresponds to the threshold current density of 0.5 kA/cm², differential resistance of 76 Ω, and maximum output power of more than 5 mW are achieved for the dielectric-free VCSEL with a square oxide aperture size of 9 μm at room temperature (RT). L–I–V characteristics of the dielectric-free VCSEL are compared with those of conventional VCSEL with the similar aperture size, which indicates the way to realize low-cost, low-power consumption VCSELs with extremely simple process. Preliminary study of the temperature-dependent L–I characteristics and modulation response of the dielectric-free VCSEL are also presented.     

Optimization of direct modulation rate for circular microlasers by adjusting mode Q factor

Semiconductor microcircular lasers have been investigated as potential light sources for photonic integrated circuits and optical interconnections for more than two decades. However, the direct modulation bandwidths of the circular microlasers remain a challenge, especially when being compared with other microlasers, such as photonic crystal lasers. In this paper, microcircular lasers connected to an output waveguide are investigated for high‐speed direct modulation with optimized mode Q factors. Small signal modulation with a resonance frequency of f_R = 12.5 GHz is realized for a AlGaInAs/InP circular microlaser with a radius of 10 µm at 290 K. Furthermore, clear eye diagrams are observed at 12.5 Gbit/s for a 15‐µm radius circular microlaser with f_R = 6.9 GHz.     

Eye-protection glasses against YAG laser injury based on the band gap reflection of one-dimensional photonic crystal

Eye-protection glasses against YAG laser injury based on band gap reflection of one-dimensional photonic crystal (PC) is designed and manufactured in this paper. The laser beam (wavelength 1.06 μm) is reflected by the one-dimensional PC (with the transmission 10⁻⁷) and absorbed by the phosphatic glass substrate (with the transmission 1% for 1.06 μm), so the transmission of the device for wavelengths of1.06 μm can reach 10⁻⁹. The glasses have enough capabilities to protect the eyes from injury of ns-YAG lasers whose energy density is 1 J/cm² for all incident angles, and also to avoid a second injury to others from the reflected laser beams. The transmission of the glasses is beyond 70% for the visible lights. The testing data of the eye-protection glasses agree well with the theoretical predictions.     

Synthesis and field emission of patterned ZnO nanorods

A simple and self-catalytic method has been developed for synthesizing finely patterned ZnO nanorods on ITO-glass substrates under a low temperature of 500 °C. The patterned ZnO nanorod arrays, a unit area is of 400 × 100 μm², are synthesized via vapor phase transport method. The surface morphology and composition of the as-synthesized ZnO nanorods are characterized by means of scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). The mechanism of formation of ZnO nanorods is also discussed. The measurement of field emission (FE) reveals that the as-synthesized ZnO nanorods arrays have a turn-on field of 3.3 V/μm at the current density of 0.1 μA/cm² and a low threshold field of 6.2 V/μm at the current density of 1 mA/cm². So this approach must have a potential application of fabricating micropatterned oxide thin films used in FE-based flat panel displays.     

Si1−xGex/Si multi-quantum well phototransistor for near-infrared operation

For the first time in the literature, we report the monolithic integration of SiGe near-infrared phototransistor and planar hetero-junction bipolar transistor (HBT). The phototransistor is made with SiGe/Si multi-quantum well structure (MQW_PHT). At room temperature, the MQW_PHT reveals an optical responsivity of 1904 mW/A at 0.85 μm and 1.25 mW/A at 1.3 μm under the reversed bias of V_CE=1.5 V. For electrical DC and microwave performance, the SiGe HBT has a current gain of 160 and a cut-off frequency (f_T) of 25 GHz, respectively.     

Laser magnetic resonance of the O2 molecule at 699 μm

A new highly sensitive far infrared optically pumped laser magnetic resonance (LMR) spectrometer has facilitated the observation of 21 transitions in O₂ at 699 μm (428.6285 GHz). All of these transitions involve N = 3 ← 1 of the oxygen molecule in its electronic ground state, X³Σ_g⁻. Of these 21 lines, 10 are due to the ¹⁶O₂, v = 0; 5 are due to the ¹⁶O₂, v = 1; 5 are due to the ¹⁶O¹⁸O, v = 0; and 1 set of 6 hyperfine components is due to the ¹⁶O¹⁷O, v = 0. From the intensity of the observed lines the sensitivity limit of this LMR spectrometer is found to be about 10⁻⁹ cm⁻¹ at this frequency with a 1-sec time constant.     

A DFG spectrometer at 3 μm for high resolution molecular spectroscopy and trace gas detection

We report the realization and characterization of a spectrometer based on difference frequency generation using a periodically poled lithium niobate crystal. As signal and pump lasers we used a diode-pumped Nd–YAG laser (λ=1.064 μm) and an extended cavity semiconductor diode laser (λ=0.785 μm), respectively. The mid-infrared coherent radiation was produced at 3 μm with a maximum power of about 160 nW obtained with 340 mW of signal and only 3.4 mW of pump. That corresponds to an efficiency of 0.01%/Wcm, which is in good agreement with other data available in literature. The generated radiation around 3 μm has allowed us to study fundamental absorption bands of molecules of great atmospheric and physical interest such as water vapor and the hydroxyl free radical. In this work we report preliminary spectroscopic results concerning the ν₁ 5₄₁→6₅₂ H₂O line at 2.968 μm. In particular, for this line we provide the first experimental estimation of self-, N₂- and O₂-broadening coefficients.     

High-efficiency,high-speed VCSELs for optical interconnects

High-efficiency, high-speed, tapered-oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) emitting at 980 nm have been demonstrated. By carefully engineering the tapered oxide aperture, the mode volume can be greatly reduced without adding much optical scattering loss for the device sizes of interest. Consequently, these devices can achieve higher bandwidth at lower current and power dissipation. In addition, the parasitics are reduced by implementing deep oxidation layers and an improved p-doping scheme in the top mirror. Our devices show modulation bandwidth exceeding 20 GHz, a record for 980 nm VCSELs. Moreover, 35 Gb/s operation has been achieved at only 10 mW power dissipation. This corresponds to a data-rate/power-dissipation ratio of 3.5 Gbps/mW. Most importantly, our device structure is compatible with existing manufacturing processes and can be easily manufactured in large volume making them attractive for optical interconnects.     

Influence of Nonlinear Gain Saturation on the Time-Bandwidth Product of Optical Pulse from a Gain-Switched Semiconductor Laser

It is found numerically that the time-bandwidth product (TBP) of optical pulse from a gain-switched semiconductor laser operating under a sufficient gain saturation condition increases monotonously with increasing modulation amplitude. This enhancement of the TBP becomes remarkable for longer-wavelength semiconductor lasers (1.3, 1.55 μm) having large value of the gain compression factor ε (∼ 10⁻²³ m³), making the pulse chirp estimation using the TBP difficult.     

Low-Frequency Optically Detected EPR of Sm<Superscript>3+</Superscript> in Cs<Subscript>2</Subscript>NaYF<Subscript>6</Subscript> Single Crystal

The Sm³⁺ ion in the Cs₂NaYF₆ single crystal was studied by optically detected electron paramagnetic resonance spectroscopy. Magnetic resonance signals were recorded by Faraday rotation at the frequency of 0.6–0.85 GHz and magnetic fields of about 0.14 T. The hyperfine parameters of ¹⁴⁷Sm³⁺ and ¹⁴⁹Sm³⁺ isotopes were determined.     

Enhanced field emission from PbTiO3 nanodots prepared by phase separation approach

Uniformly distributed PbTiO₃ nanodots were successfully prepared by phase separation approach. A precursor sol film was first spin-coated on Si wafer and then spontaneously separated into two distinct phases owing to the Marangoni instability. PT nanodots with tailorable size and density were obtained after further heat treatment. X-ray diffraction analysis indicated that these nanodots showed a perovskite structure. An excellent room temperature field emission property of PbTiO₃ nanodots was observed: the minimum turn-on voltage was about 5.3 V/μm; while the emission current density reached about 270 μA cm⁻² at an applied field of about 9.25 V/μm.     

Output characteristics of a cataphoresis He–Sr recombination laser

A cataphoresis discharge tube of 7 mm inner diameter and 38 cm active length was designed and made for the He–Sr⁺ laser. The cataphoretic input of uniform distribution of strontium vapor concentrations along the active region was realized by the cataphoresis effect and the slow flowing (0.5 nl/h) of helium buffer gas. The strontium ionic recombination laser at 430.5 nm and the R–M transition laser at 1.03 μm were obtained with the modified Blumlein circuit by high-frequency longitudinal pulsed discharge. The laser components are concentrated on the 430.5 nm wavelength. Dependences of working parameters such as the pulse frequency, the supply voltage, and the helium pressure on laser output characteristics were measured and discussed. The maximum laser output power of 819 mW and specific power of 56 mW/cm³ were obtained, respectively.     

Modulation frequency dependence of actively mode-locked oscillation of A He-Ne 3.39 μm laser

The dependence of mode-locked oscillation of homogeneous lasers on the modulation frequency of locking signal is studied. An experiment using a He-Ne 3.39 μm laser and applying intracavity phase (FM) modulation was performed on the frequency range of 40 MHz to 1.20 GHz. The oscillation bandwidth was observed to be nearly proportion to $\text{√}\text{?}{}_{\mathrm{m}}$ and ?_m (?_m: modulation frequency) for the modulation frequency range of ?_m<Δ? and ?_m>Δ? (Δ?: linewidth), respectively. The possibility to generate ultra-short pulses by using larger modulation frequency than the linewidth is also discussed. For 1.20 GHz modulation frequency, the pulsewidth was estimated to be about 70 ps from the observed power spectrum, while the reciprocal of the linewidth was about 3 ns.     

InGaAsP/GaAs SCH SQW laser arrays grown by LPE

InGaAsP/InGaP/GaAs separate confinement heterostructure (SCH) single quantum well (SQW) laser structures have been obtained by an improved liquid-phase epitaxy (LPE) process. Wide-contact stripe lasers have been fabricated with threshold current density below 300 A/cm² and cavity length of 800 μm. Finally, with the same grown wafers, 1-cm bar laser diode (LD) arrays are made with 150 μm wide stripes and a maximum fill factor of 30%. Continuous Wave (CW) power output of 20 W has been reached.     

Negative Nonlinear Absorption Effect for 1.5 μm Laser in an Erbium Chloride Solution

The dependence of the negative nonlinear absorption effect on both modulation degree and frequency of the incident laser was investigated in an erbium chloride solution using a 1.5μm laser diode. The reversed-phase waveform was observed at modulation degrees smaller than 71%. As modulation frequency increased, the transmitted waveforms became asymmetrical and the effect was suppressed. The effect was obtained at wavelengths of 1510.3 to 1510.8 nm. The negative nonlinear absorption effect for 1.5 μm. can be explained by considering an enhanced absorption model for a four-level system of the Er³⁺ ion.     

Synthesis and efficient field emission of ZnO nanoinjectors

ZnO nanoinjectors were synthesized on Au-coated Si substrate by direct thermal evaporation of zinc powder at a low temperature of 600 °C and atmospheric pressure. Field-emission scanning electron microscopy and X-ray diffraction were applied to study the structural characteristics of the sample. The result indicated that the nanoinjector sample consisted of single-crystalline wurtzite structures which were preferentially oriented in the 0 0 1 direction. The field emission of the sample started at a turn-on field of 1.5 V/μm at a current density of 1 μA/cm², while the emission current density reached about 1 mA/cm² at an applied field of 5.0 V/μm.     

Compact eye-safe laser sources based on OPOs with KTP or PPKTP crystals

We report on compact eye-safe nanosecond laser sources emitting in the 1.5 μm wavelength range based on non-critically phase-matched parametric interaction in optical parametric oscillators (OPOs) with KTP and periodically poled KTP (PPKTP) crystals, pumped by the fundamental frequency of Nd:YAG lasers. As much as 250 μJ signal pulse energy at 1.5 μm wavelength, 6.5 ns FWHM pulse-width, has been obtained in a PPKTP-OPO, extracavity pumped by a Nd:YAG microlaser oscillator–amplifier at 650 μJ pump pulse energy, 8 ns pulse-width. A single signal pulse of 2.7-mJ output energy at 1.57 μm wavelength, less than 5 ns pulse-width, was generated in a KTP-OPO, intracavity pumped by a passively Q-switched Nd:YAG laser.     

IR-induced nonlinear optics in Ge-doped Bi12TiO20 large-sized nanocrystallites

Photoinduced non-linear optical effects in large-sized (up to 25 nm) nanocrystallites (NC) of Ge-doped Bi₁₂TiO₂₀ (BTO:Ge) incorporated within olygoether photopolymer matrix have been studied. Photoinduced second harmonic generation (PISHG) was measured. Nd:YAG pulsed laser (λ=1.06 μm) was used as a source of photoinducing light. As a fundamental light source for the SHG and two-photon absorption, Er:LiYF₄ laser (λ=2.065 μm) was used. We have found that with increasing IR pump power density, the output doubled frequency SHG signal (λ=1.03 μm) increases and achieves its maximum value at the pump power density about 0.45 GW/cm² and NC size about 12 nm.The values of second-order optical susceptibilities were almost 20% larger than for the pure BTO NC single crystals. With decreasing temperature below 60 K, the SHG signal increases achieving maximal value at LHeT.