Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x > 0.4) Si/strained Si1−xGex/Si(1 0 0) heterostructure

Effectiveness of a Ge fraction modulated spacer in hole resonant tunneling diodes (RTDs) with Si/strained Si_1−xGe_x heterostructures epitaxially grown on Si(1 0 0) was investigated to improve the electrical characteristics at higher temperatures. Electrical characteristics measured for 30 RTDs, with the modulated spacer at higher Ge fraction (x = 0.48) on a single wafer, show that the deviation of the peak current and voltage at the resonant peak falls in ranges of ±25% and ±10%, respectively. For the RTDs, negative differential conductance (NDC) characteristics are obtained even at higher temperatures around 230 K than that for the RTDs with x = 0.42. The result indicates that the introduction of higher Ge fraction is effective for NDC in RTD at higher temperature.     

Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53a0.47s/InAs resonant tunneling diodes on quantum well widths

This paper studies the dependence of I-V characteristics on quantum well widths in AlAs/In_0.53Ga_0.47As and AlAs/In_0.53Ga_0.47As/InAs resonant tunneling structures grown on InP substrates. It shows that the peak and the valley current density in the negative differential resistance region are closely related with quantum well width. The measured peak current density, valley current densities and peak-to-valley current ratio of resonant tunneling diodes are continually decreasing with increasing well width.     

Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well

We theoretically study the influence of spacer layer thickness fluctuation（SLTF） on the mobility of a twodimensional electron gas（2DEG） in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.     

La0.67Ca0.33MnO3薄膜皮秒光电效应

在1064 nm波长脉冲激光（脉宽25 ps）的照射下，钙钛矿氧化物薄膜La0.67Ca0.33MnO3/SrTiO3具有超快光电效应，对激光脉冲显示ps量级的响应时间，上升沿响应时间300 ps，半高宽700 ps，同时，对激光能量的响应灵敏度为500 mV/mJ。     

Reduced dielectric loss and leakage current in CaCu3Ti4O12/SiO2/CaCu3Ti4O12 multilayered films

The CaCu₃Ti₄O₁₂/SiO₂/CaCu₃Ti₄O₁₂ (CCTO/SiO₂/CCTO) multilayered films were prepared on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition method. It has been demonstrated that the dielectric loss and the leakage current density were significantly reduced with the increase of the SiO₂ layer thickness, accompanied with a decrease of the dielectric constant. The CCTO film with a 20 nm SiO₂ layer showed a dielectric loss of 0.065 at 100 kHz and the leakage current density of 6×10⁻⁷ A/cm² at 100 kV/cm, which were much lower than those of the single layer CCTO films. The improvement of the electric properties is ascribed to two reasons: one is the improved crystallinity; the other is the reduced free carriers in the multilayered films.     

n-ZnO:Al/i-ZnO/n-CdS/p-Cu2ZnSnS4太阳能电池光伏特性的分析

具有高光吸收系数的半导体Cu₂ZnSnS₄ (CZTS)薄膜是一种新型太阳能电池材料. 本文对n-ZnO:Al/i-ZnO/n-CdS/p-CZTS结构的CZTS薄膜太阳能电池进行分析, 讨论CZTS薄膜的掺杂浓度、厚度、缺陷态和CdS薄膜的掺杂浓度、 厚度对太阳能电池转换效率的影响以及太阳能电池的温度特性. 分析表明, CZTS薄膜作为太阳能电池的主要光吸收层, CZTS薄膜的掺杂浓度和厚度的取值对太阳能电池的转换效率有显著影响, CZTS薄膜结构缺陷态的存在会导致太阳能电池性能的下降. CdS缓冲层的掺杂浓度、厚度对太阳能电池光伏特性的影响较小. 经结构参数优化得到的n-ZnO:Al/i-ZnO/n-CdS/p-CZTS薄膜太阳能电池的最佳光 伏特性为开路电压1.127 V、短路电流密度27.39 mA/cm²、填充因子87.5%、 转换效率27.02%,转换效率温度系数为-0.14%/K.     

Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures

We have developed low temperature formation methods of SiO₂/Si and SiO₂/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO₃ aqueous solutions at 120 °C), an ultrathin (i.e., 1.3-1.4 nm) SiO₂ layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 °C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 °C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO₂ gap-state density, and (iii) high band discontinuity energy at the SiO₂/Si interface arising from the high atomic density of the NAOS SiO₂ layer.For the formation of a relatively thick (i.e., ≥10 nm) SiO₂ layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in ∼40 wt% HNO₃ and azeotropic HNO₃ aqueous solutions, respectively. In this case, the SiO₂ formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO₂ layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO₂ layer is slightly higher than that for thermal oxide. When PMA at 250 °C in hydrogen is performed on the two-step NAOS SiO₂ layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 °C.A relatively thick (i.e., ≥10 nm) SiO₂ layer can also be formed on SiC at 120 °C by use of the two-step NAOS method. With no treatment before the NAOS method, the leakage current density is very high, but by heat treatment at 400 °C in pure hydrogen, the leakage current density is decreased by approximately seven orders of magnitude. The hydrogen treatment greatly smoothens the SiC surface, and the subsequent NAOS method results in the formation of an atomically smooth SiO₂/SiC interface and a uniform thickness SiO₂.     

A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy (MBE) in turn on a GaAs substrate. An Al_0.24Ga_0.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-μm gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property.     

Room-temperature observation of current bistability and fine structures in germanium quantum dots/SiO2 resonant tunneling diodes

The steady-state and time-dependent current–voltage (I–V) characteristics are experimentally investigated in Ge quantum dot (QD)/SiO₂ resonant tunneling diodes (RTDs). Ge QDs embedded in a SiO₂ matrix are naturally formed by thermal oxidation of Si_0.9Ge_0.1 nanowires (30 nm×50 nm) on silicon-on-insulator substrates. The average dot size and spacing between dots are 9±1 and 25 nm, respectively, from TEM observations, which indicate that one or two QDs are embedded between SiO₂ tunneling barriers within the nanowires. Room-temperature resonant oscillation, negative differential conductance, bistability, and fine structures are observed in the steady-state tunneling current of Ge-QD/SiO₂ RTDs under light illumination. Time-dependent tunneling current characteristics display periodic seesaw features as the Ge-QDs RTD is biased within the voltage regime of the first resonance peak while they exhibit harmonic swing behaviors as the RTD is biased at the current valleys or higher-order current peaks. This possibly originates from the interplay of the random telegraph signals from traps at the QD/SiO₂ interface as well as the electron wave interference within a small QD due to substantial quantum mechanics effects.     

Cr/Ru/PtCo/Ru/PtCo/Ru介质中底层Ru厚度对磁记录特性影响的研究

讨论了Cr/Ru（1）/PtCo（稳定层）/Ru（2）/PtCo（记录层）/Ru（3） 结构的矫顽力Hc_c与层间反铁磁耦合交换场Hex_ex随Ru（1）与Ru（2）厚度变 化的规律.研究发现 ，样品的矫顽力及交换场随Ru（1）厚度增加而增大， 这可能是由Ru（1）hcp结构引起的. 矫顽力及交换场在Ru（2）厚度为08nm处有峰值. 关键词： 磁记录 反铁磁耦合     

多孔TiO2/Al/SiO2纳米复合结构的紫外光吸收特性研究

在SiO₂玻璃衬底上用脉冲激光沉积(PLD)技术,分别沉积Ti和Ti/Al膜,经电化学阳极氧化成功制备了多孔TiO₂/SiO₂和TiO₂/Al/SiO₂纳米复合结构. 其中TiO₂薄膜上的微孔阵列高度有序,分布均匀. 实验研究了Al过渡层对多孔TiO₂薄膜光吸收特性的影响. 结果表明：无Al过渡层的多孔TiO₂薄膜其紫外吸收峰在27 关键词： 2薄膜')" href="#">多孔TiO₂薄膜 阳极氧化 紫外光吸收     

多孔TiO2/Al/SiO2纳米复合结构的紫外光吸收特性研究

在SiO₂玻璃衬底上用脉冲激光沉积(PLD)技术，分别沉积Ti和Ti/Al膜，经电化学阳极氧化成功制备了多孔TiO₂/SiO₂和TiO₂/Al/SiO₂纳米复合结构. 其中TiO₂薄膜上的微孔阵列高度有序，分布均匀. 实验研究了Al过渡层对多孔TiO₂薄膜光吸收特性的影响. 结果表明：无Al过渡层的多孔TiO₂薄膜其紫外吸收峰在27     

Sc2O3-W matrix impregnated cathode with spherical grains

Sc₂O₃-W matrix cathodes have been prepared by using a liquid-liquid doping method combined with high-temperature sintering. The microstructure and physical behavior of active substances of scandia-doped tungsten matrix and impregnated cathode has been studied by SEM and AES methods. The results show that the matrix has a homogeneous structure composed of W grains with spherical shape and superfine Sc₂O₃ particles dispersed uniformly over and among W grains. After impregnation, this Sc-type impregnated cathode has high emission capability. Space-charge-limited current density could reach 52 A/cm² at 850 °C_b. The high emission results from a Ba-Sc-O active layer with a thickness of about 80 nm, which is formed at the cathode surface during the activation period. Both the decrease of the thickness of active surface layer and the decrease of the content of Sc at the surface could lead to the degradation of current density during operation.     

p-GaN插入层调控InGaN基黄绿双波长LED发光光谱

采用MOCVD技术在硅衬底上生长了含有7个黄光量子阱和1个绿光量子阱的混合有源区结构的InGaN基黄绿双波长LED外延材料,研究了电子阻挡层前p-GaN插入层厚度对黄绿双波长LED载流子分布及外量子效率(EQE)的影响。通过LED变温电致发光测试系统对LED光电性能进行了表征。结果表明,100 K小电流时随着电流密度的增大,三组样品的绿光峰与黄光峰相对强度的比值越来越大,且5.5 A·cm^-2的电流密度下,随着温度从300 K逐步降低至100 K,三组样品的绿光峰与黄光峰相对强度的比值也越来越大,说明其载流子都在更靠近p型层的位置发生辐射复合。三组样品的p-GaN插入层厚度为0,10,30 nm时,EQE峰值依次为29.9%、29.2%和28.2%,呈现依次减小的趋势,归因于p-GaN插入层厚度越大,p型层越远离有源区,空穴注入也越浅。电子阻挡层前p-GaN插入层可以有效减小器件EL光谱中绿光峰随着电流密度增加时峰值波长的蓝移(33 nm),实现了对低温发光光谱的调控。     

Enhancement of giant magneto-impedance effect in Ni80Fe20/SiO2/Cu composite wires

Ni₈₀Fe₂₀/SiO₂/Cu composite wires of Cu core 60 μm in diameter and coated with layers of SiO₂ and Ni₈₀Fe₂₀ were prepared by RF magnetron sputtering. The influences of the insulator layer thickness, the measurement mode and the magnitude of the driving current on the giant magneto-impedance (GMI) effect were investigated. The results showed that there was an optimum thickness of the insulator layer and the driving current can influence the shape of the MI curve. Resonance enhancement of the GMI was found in the new measurement mode. The results are discussed by taking account of the electromagnetic interactions.     

Nd28Fe66B6/Fe50Co50双层纳米复合膜的结构和磁性

利用磁控溅射法制备了Nd₂₈Fe₆₆B₆/Fe_{50Co50 双层纳米复合磁性薄膜，研究了其结构和磁性.经873K退火处理15min 后，利用x射线衍射仪测定薄膜晶体结构，采用俄歇电子能谱仪估算薄膜厚度和超导量子干 涉仪测量其磁性.磁性测量表明，1)该系列薄膜具有垂直于膜面的磁各向异性.从起始磁化曲 线和小回线的形状特征可知，矫顽力机制主要是由畴壁钉扎控制.2)对于固定厚度（10nm） 层的硬磁相Nd-Fe-B和不同厚度（dFeCo=1—100nm）层软磁相FeCo双层纳米复合 膜,剩磁随软磁相FeCo 厚度的增加快速增加，而矫顽力则减少.当dFeCo=5nm 时 ，最大磁能积达到160×１０^３A/m.磁滞回线的单一硬磁相特征说明，硬磁相Nd -Fe-B层和软磁相FeCo层之间的相互作用使两相很好地耦合在一起.剩磁和磁能积的提高是由 于两相磁性交换耦合所致. 关键词： Nd-Fe-B/FeCo双层纳米复合膜 交换耦合 磁性增强}     

Influence of the thickness of the tunnel layer on the charging characteristics of Si nanocrystals embedded in an ultra-thin SiO2 layer

In this paper, we have studied the effect of the thickness of the initial SiO₂ layer (5–7 nm) on the charge and discharge properties of a 2D array of Si nanoparticles embedded in these SiO₂ layers fabricated by ultra-low-energy ion implantation (ULE-II) and annealing. The structural characteristics of these nanocrystal-based memories (position of the nanocrystals with respect to the electrodes, size and surface density of the particles in the plane) were studied by transmission electron microscopy (TEM) and energy filtered TEM (EF-TEM). Electrical characterizations were performed at room temperature using a nano-MOS capacitor to be able to address only a few nanoparticles (nps). EFTEM gives the measurements of oxide thickness, injection, control and nps distances, size and density. I–V and I–t measurements exhibit current peaks and random telegraph signal fluctuations that can be interpreted as due to quantized charging of the nps and to some electrostatic interactions between the trapped charges and the tunnelling current. We have shown that these characteristics strongly vary with the initial oxide thickness, exhibiting several charging/discharging events for the 7-nm-thick layer while charging events prevail in the case of 5-nm-thick layer. These results indicate that the probability of discharging phenomena is reduced when the tunnel layer thickness decreases.     

Pressure effects in AlAs/Inx Ga1-xAs/GaAs resonant tunnelling diodes for application in micromachined sensors

This paper reports the current-voltage characteristics of [001]-oriented AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes （RTDs） as a function of uniaxial external stress applied parallel to the [110] and the [1^-10] orientations, and the output characteristics of the GaAs pressure sensor based on the pressure effect on the RTDs. Under [110] stress, the resonance peak voltages of the RTDs shift to more positive voltages. For [1^-10] stress, the peaks shift toward more negative voltages. The resonance peak voltage is linearly dependent on the [110] and [1^-0] stresses and the linear sensitivities are up to 0.69 mV/MPa, -0.69 mV/MPa respectively. For the pressure sensor, the linear sensitivity is up to 0.37 mV/kPa.     

Magnetotransport in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions: in-plane effective mass,quantum and transport mobilities of 2D electrons

Shubnikov–de Haas (SdH) and Hall effect measurements, performed in the temperature range between 3.3 and 20 K and at magnetic fields up to 2.3 T, have been used to investigate the electronic transport properties of lattice-matched In_0.53Ga_0.47As/In_0.52Al_0.48As heterojunctions. The spacer layer thickness (t_S) in modulation-doped samples was in the range between 0 and 400 Å. SdH oscillations indicate that two subbands are already occupied for all samples except for that witht_S =  400 Å. The carrier density in each subband, Fermi energy and subband separation have been determined from the periods of the SdH oscillations. The in-plane effective mass (m ^* ) and the quantum lifetime (τ_q) of 2D electrons in each subband have been obtained from the temperature and magnetic field dependences of the amplitude of SdH oscillations, respectively. The 2D carrier density (N₁) in the first subband decreases rapidly with increasing spacer thickness, while that (N₂) in the second subband, which is much smaller thanN₁ , decreases slightly with increasing spacer thickness from 0 to 200 Å. The in-plane effective mass of 2D electrons is similar to that of electrons in bulk In_0.53Ga_0.47As and show no dependence on spacer thickness. The quantum mobility of 2D electrons is essentially independent of the thickness of the spacer layer in the range between 0 and 200 Å. It is, however, markedly higher for the samples with a 400 Å thick spacer layer. The quantum mobility of 2D electrons is substantially smaller than the transport mobility which is obtained from the Hall effect measurements at low magnetic fields. The transport mobility of 2D electrons in the first subband is substantially higher than that of electrons in the second subband for all samples with double subband occupancy. The results obtained for transport-to-quantum lifetime ratios suggest that the scattering of electrons in the first subband is, on average, forward displaced in momentum space, while the electrons in the second subband undergo mainly large-angle scattering.     

Microstructure and dielectric properties of La2O3 doped amorphous SiO2 films as gate dielectric material

As a potential gate dielectric material, the La₂O₃ doped SiO₂ (LSO, the mole ratio is about 1:5) films were fabricated on n-Si (0 0 1) substrates by using pulsed laser deposition technique. By virtue of several measurements, the microstructure and electrical properties of the LSO films were characterized. The LSO films keep the amorphous state up to a high annealing temperature of 800 °C. From HRTEM and XPS results, these La atoms of the LSO films do not react with silicon substrate to form any La-compound at interfacial layer. However, these O atoms of the LSO films diffuse from the film toward the silicon substrate so as to form a SiO₂ interfacial layer. The thickness of SiO₂ layer is only about two atomic layers. A possible explanation for interfacial reaction has been proposed. The scanning electron microscope image shows the surface of the amorphous LSO film very flat. The LSO film shows a dielectric constant of 12.8 at 1 MHz. For the LSO film with thickness of 3 nm, a small equivalent oxide thickness of 1.2 nm is obtained. The leakage current density of the LSO film is 1.54 × 10⁻⁴ A/cm² at a gate bias voltage of 1 V.