Thermoactivated spectroscopy of heterovalent impurity traps in CdWO4

Abstract

Recombination luminescence emission spectra, TSL and trap spectra estimated by fractional glow technique (FGT), in nominally pure and Li-, Bi- and Ho-doped CdWO₄, crystals are reported. According to the investigations by FGT heterovalent impurities Li, Bi and Ho causes localized electronic states which act as traps for charge carriers. It is shown that TSL results in emission of known blue-green luminescence band by emptying of the Li⁺-related traps in CdWO₄-Li and yellow luminescence band by emptying of the Bi³⁺-related traps in CdWO₄-Bi. It is proposed that blue-green and yellow luminescence occur by recombination correspondingly of free holes and free electrons at different intrinsic tungstate group related luminescence centers.     

Effect of a Mo impurity on the luminescence properties of CdWO4, ZnWO4, and CaWO4

The thermoluminescence, the spectral composition of the x-ray luminescence and the thermoluminescence, the short-wave absorption, and the luminescence-excitation spectra were studied for ZnWO₄, CdWO₄, and CaWO₄ single crystals with and without molybdenum impurities. The thermal-activation energies were found for radiationless transitions for all these crystals from the temperature dependence of the steady-state x-ray luminescence. A qualitative explanation for the results is offered.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 10, pp. 72–77, October, 1970.Deceased.     

X‐ray‐excited optical luminescence and X‐ray absorption fine‐structures studies of CdWO4 scintillator

X‐ray‐excited optical luminescence (XEOL) emission and excitation spectra as well as the EXAFS signal of CdWO₄ were measured in the energy region of the Cd and W absorption edges. From EXAFS refinement, structural parameters such as number of atoms, distance from the absorbing atom and width of coordination shells in the W neighborhood were determined. The role of W–O interactions on the intrinsic luminescence of CdWO₄ is discussed. The efficiencies of conversion, transfer and emission processes involved in the scintillation mechanism showed to be high when self‐trapped excitons are formed locally by direct excitation of W ions. Annihilation of these excitons provides the characteristic scintillation of CdWO₄, a broad band emission with maximum at 500 nm. The presence of two energetically different O positions in the lattice gives rise to the composite structure of the luminescence band, and no influence of extrinsic defects was noticed. A mismatch between the X‐ray absorption coefficient and the zero‐order luminescence curves corroborates that the direct excitation of Cd ions induces secondary electronic excitations not very effective in transferring energy to the luminescent group, WO₆.     

Role of intrinsic defects and impurities in forming the optical characteristics of ZnWO4 and CdWO4 crystals

We analyze the optical characteristics of crystals within the framework of a model representation that presupposes the entry of the background impurity of iron ions in two valence states, Fe³⁺ and Fe²⁺, into regular lattice nodes. The spectral manifestation of intrinsic defects of vacancy-type structure depending on the conditions of crystal growth and heat treatment is comprehensively investigated. With allowance for the specific features of the technology applied, we have tested the technique suggested in scientific periodicals for bleaching ZnWO₄ and CdWO₄ crystals by doping with nonisovalent ions, in particular, with Sb and Ag impurities. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 2, pp. 211–216, March–April, 2000. The work was carried out with support from INTAS-UKRAINE within the framework of the project INTAS-UA-95-0166.     

掺Bi钨酸镉单晶体发光特性的研究

用坩埚下降法(Bridgman)生长出了Bi离子掺杂的CdWO₄单晶.测定了晶体不同部位的吸收光谱、发射光谱和X射线电子能谱(XPS).Bi离子的掺入引起CdWO₄晶体的吸收边从345 nm红移到399 nm.在311 nm, 373 nm,808 nm和980 nm光的激发下,分别观测到中心波长为470 nm,528 nm,1078 nm和较弱的1504 nm四个不同发射带.Bi:CdWO₄单晶的XPS谱分别与Bi₂ 关键词： Bi离子 荧光光谱 X射线电子能谱 4单晶')" href="#">CdWO₄单晶     

Electronic structure and optical properties of CdWO4 with oxygen vacancy studied from first principles

The electronic structures, dielectric functions and absorption coefficient of both perfect CdWO₄ crystal (CWO) and the CWO crystal containing oxygen vacancy (CWO: V _O) have been studied using the CASTEP code with the lattice structure optimized. The calculated total density of states (TDOS) of CWO: V _O indicates that the oxygen vacancy would introduce a new electronic state within the band gap compared with that of perfect CWO. The dielectric functions are calculated since the imaginary part of the dielectric function can reduce the optical absorption of a certain crystal, and then the absorption coefficient is calculated. The calculated absorption spectra show that CWO: V _O exhibits two absorption bands in the ultraviolet and visible region, peaking at about 3.0 eV (413 nm) and 3.5 eV (354 nm), respectively, which are in agreement with the experimental results showing that the yellow CWO has two optical absorption bands in this region peaking at around 350 nm and 400 nm respectively. It can be concluded that oxygen vacancy causes these two absorption bands. The calculations also indicate that the optical properties of CWO exhibit anisotropy, and can be explained by the anisotropy of the crystal lattice.     

Electronic excitations in BeAl<Subscript>2</Subscript>O<Subscript>4</Subscript>, Be<Subscript>2</Subscript>SiO<Subscript>4</Subscript>, and Be<Subscript>3</Subscript>Al<Subscript>2</Subscript>Si<Subscript>6</Subscript>O<Subscript>18</Subscript> crystals

Low-temperature (T = 7 K) time-resolved selectively photoexcited luminescence spectra (2–6 eV) and luminescence excitation spectra (8–35 eV) of wide-bandgap chrysoberyl BeAl₂O₄, phenacite Be₂SiO₄, and beryl Be₃Al₂Si₆O₁₈ crystals have been studied using time-resolved VUV spectroscopy. Both the intrinsic luminescence of the crystals and the luminescence associated with structural defects were assigned. Energy transfer to impurity luminescence centers in alexandrite and emerald was investigated. Luminescence characteristics of stable crystal lattice defects were probed by 3.6-MeV accelerated helium ion beams.     

Luminescence of mercurylike impurities in single-crystal CdWO4 compounds

The processes of crystallization by the method of liquid epitaxy are studied for the first time for single-crystal films of CdWO₄ doped with the mercurylike ions Bi³⁺ and Pb²⁺, which can be used as thin-film components of combined scintillators for monitoring α- and β-activities. It is shown that in comparison with their solidcrystal analogs, the special features of these films consist in a longwave shift of the integral luminescence spectrum that is caused by high concentrations of the radiating complexes (V_Cd-WO₆) with hv_max=2.05–2.15 eV and the “distorted” complexes (WO₆)^* in them. It is found that in the case of luminescence of single-crystal films CdWO₄:Pb, radiation of mercurylike centers (PbO₆) prevails with hv_max=2.87 eV, while in luminescence of CdWO4, radiation of centers (BiO₆) with hv_max=2.16 eV and of complexes (V_Cd-WO₆). Institute of Applied Physics, Iv. Franko Lvov State University, 49, General Chuprynka St., Lvov, 290044, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 2, pp. 211–215, March–April, 1998.     

Relaxation dynamics of electronic excitations in CaWO4 and CdWO4 crystals studied by femtosecond interferometry technique

The relaxation of electronic excitations in CdWO₄ and CaWO₄ crystals was studied using the method of time-resolved interferometry with 100-fs temporal resolution at temperatures 15–295 K. The electronic system was excited in the one-photon and two-photon regime within the excitonic band in CaWO₄ and in the electron-hole continuum in CdWO₄. Immediate trapping of charge carriers was detected under pumping in the excitonic band of CaWO₄. This result is in agreement with decay kinetics measurements with nanosecond time resolution under direct creation of excitons by 100-fs laser pulses. Fast relaxation of charge carriers followed by formation of excitons was observed in CdWO₄. The comparison with previous work allows suggesting the formation of bulk excitons and surface-perturbed excitons in the multi-photon and one-photon regime. The corresponding models of self-trapped exciton creation in tungstate crystals are discussed.     

Exited states of the luminescence centers in tungstate crystals

The electronic structures of luminescence centers in ZnWO₄, ZnWO₄:Mo, and ZnWO₄:Cd crystals are calculated by the configuration interaction method using embedded cluster approach. Dependencies of energies of the ground and excited electronic states of the centers on vibration coordinates are computed. The energies and oscillator strengths of radiative transitions in the luminescence centers of regular and doped zinc tungstate crystals are obtained. Formation of emission spectra of ZnWO₄, ZnMoO₄, and CdWO₄ are analyzed using results of the calculations.     

Modeling of the quadratic non-Condon effect in the 4f 135d-4f 14 luminescence spectrum of a LiYF4:Lu3+ crystal

Based on a microscopic model of the electron-phonon interaction, we have calculated the shape of the 4f ¹³5d-4f ¹⁴ electronic-vibrational luminescence spectrum of a LiYF₄:Lu³⁺ crystal at zero temperature taking into account the quadratic non-Condon effect. We have found that the magnitude of the quadratic non-Condon effect of this spectrum is several times greater than the magnitude of the linear non-Condon effect. We have formulated conditions under which the zero-phonon line can be observed in absorption and luminescence spectra of this transition, which is forbidden at zero temperature. It has been proven that, if the point symmetry group of the environment of an impurity center does not have mathematically irreducible representations with a dimension higher than unity, no zero-phonon line will be observed in these spectra. We have given an explanation for the absence of the zero-phonon line in 4f ¹⁴-4f ¹³5d absorption and luminescence spectra of the LiYF₄:Lu³⁺ crystal at low temperatures.     

Absorption,luminescence, and electron paramagnetic resonance of molybdenum ions in CdWO4

A single crystal of cadmium tungstate (CdWO₄) containing approximately 200 ppm of molybdenum was grown by the Czochralski method and then characterized in a series of optical absorption, photoluminescence (PL), photoluminescence excitation (PLE), and electron paramagnetic resonance (EPR) experiments. The Mo⁶⁺ ions substitute for W⁶⁺ ions and serve as recombination sites for electrons and holes when the crystal is exposed to ionizing radiation. A charge-transfer absorption band for the Mo⁶⁺ ions was observed near 320 nm at 10 K. The PL experiments, performed at low temperature with 325 nm excitation, showed a Mo-associated emission peaking near 680 nm. A direct correlation of the 680 nm emission and the 320 nm absorption band was established by the PLE data. When these doped CdWO₄ crystals are exposed at low temperature either to light that is near or above the band gap or to X-rays, the Mo⁶⁺ ions can trap an electron and form stable Mo⁵⁺ ions. The EPR spectrum of the Mo⁵⁺ ions was observed at temperatures near 15 K, and a complete set of parameters describing the g matrix was obtained from an angular dependence study.     

PbWO<Subscript>4</Subscript> crystal for laser energy accumulation and transformation

The picosecond interband two-photon laser excitation of PbWO₄ crystals at a temperature of 10 K leads to electronic excitation energy accumulation, which results in almost 100% induced absorption in the 450–750 nm spectral range. The relaxation time of this induced absorption exceeds 100 min. The electronic excitation energy accumulated in the PbWO₄ crystal at T = 10 K excites the intrinsic luminescence with a decay time longer than 45 min. The decay kinetics and the spectra of the intrinsic luminescence of the PbWO₄ crystal at a temperature of 10 K were measured under two-photon and single-photon excitation. The luminescence under two-photon and single-photon excitation revealed a difference in the structure of the spectra.     

Preparation, structures and photoluminescent enhancement of CdWO4-TiO2 composite nanofilms

For the first time, Cadmium tungstate (CdWO₄)-TiO₂ composite nanofilms on a glass substrate were prepared by means of the dip-coating technique, in which collodion was used as a dispersant and film-forming agent. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), thermo gravimetric and thermal analyses (TG/DTA), FTIR and photoluminescence (PL) methods, respectively. SEM and XRD characterization of these films indicated that CdWO₄ particles crystallized in a monoclinic wolframite-type structure whereas TiO₂ particles were Anatase phase; and both of them were well distributed in the nanofilms. FTIR spectra proved the presence of CdWO₄ on the nanofilms. Photoluminescent results showed that the emitting peak of CdWO₄ films blue shifted slightly relative to that of CdWO₄ crystal. Moreover, the PL intensity of CdWO₄-TiO₂ composite nanofilm was much higher than that of CdWO₄ nanofilm. We ascribed that the introduction of TiO₂ should be responsible for the PL enhancement.     

Electronic structure calculations of lead tungstate PbWO 4 crystals with defects of molybdenum impurity

Lead tungstate PbWO 4 crystals are one of the most effective scintillation materials for calorimetric devices designed to detect elementary particles with extremely high energies [1]. The interest to PbWO 4 scintillation and luminescence properties increased noticeably in the recent years [1, v 2]. However, experimental results obtained for PbWO 4 optical properties, substantially differ for crystals, produced under different growing conditions. Such a variety led to the situation, that up to now there are no generally accepted explanations for the origin of luminescence centres in PbWO 4 . The electronic structure of possible luminescent centres in perfect lead tungstate crystals PbWO 4 and in the crystals with molybdenum impurity PbWO 4 :Mo is ab-initio calculated in order to elucidate the origin of luminescence in lead tungstate crystals. Conclusions concerning excitation of self luminescence in perfect crystals and defect luminescence in Mo-doped crystals are made on the basis of results of calculations and experimental data on luminescence and photo excitation of PbWO 4 and PbWO 4 :Mo crystals.     

Synchrotron and laser excitation of luminescence in PbWO<Subscript>4</Subscript>:Tb crystals at different temperatures

The effect of temperature on the spectral luminescence characteristics of PbWO₄:Tb³⁺ crystals with synchrotron and laser excitation is studied. If PbWO₄:Tb³⁺ is excited by synchrotron radiation with λ = 88 nm at 300 K, a faint recombination luminescence of the impurity terbium is observed against the matrix luminescence. When the temperature is reduced to 8 K, the luminescence intensity of PbWO₄:Tb³⁺ increases by roughly an order of magnitude and the characteristic luminescence of the unactivated crystal is observed. Excitation of PbWO₄:Tb³⁺ by a nitrogen laser at 300 K leads to the appearance of emission from Tb³⁺ ions. At 90 K, a faint matrix luminescence is observed in addition to the activator emission. The formation of the luminescence excitation spectra for wavelengths of 60–320 nm is analyzed and the nature of the emission bands is discussed.     

Electronic excitations and luminescence of SrMgF4 single crystals

The electronic and crystal structures of SrMgF₄ single crystals grown by the Bridgman method have been investigated. The undoped SrMgF₄ single crystals have been studied using low-temperature (T = 10 K) time-resolved fluorescence optical and vacuum ultraviolet spectroscopy under selective excitation by synchrotron radiation (3.7–36.0 eV). Based on the measured reflectivity spectra and calculated spectra of the optical constants, the following parameters of the electronic structure have been determined for the first time: the minimum energy of interband transitions E _g = 12.55 eV, the position of the first exciton peak E _n = 1 = 11.37 eV, the position of the maximum of the “exciton” luminescence excitation band at 10.7 eV, and the position of the fundamental absorption edge at 10.3 eV. It has been found that photoluminescence excitation occurs predominantly in the region of the low-energy fundamental absorption edge of the crystal and that, at energies above E _g , the energy transfer from the matrix to luminescence centers is inefficient. The exciton migration is the main excitation channel of photoluminescence bands at 2.6–3.3 and 3.3–4.2 eV. The direct photoexcitation is characteristic of photoluminescence from defects at 1.8–2.6 and 4.2–5.5 eV.     

Gamma-ray irradiation effect on the absorption and luminescence spectra of Nd:GGG and Nd:GSGG laser crystals

Laser crystals Nd³⁺:Gd₃Ga₅O₁₂ (Nd:GGG) and Nd³⁺:Gd₃Sc₂Ga₃O₁₂ (Nd:GSGG) were grown by Czochralski method. The influence of gamma-ray irradiation on their absorption and luminescence spectra has been investigated. Two additional absorption (AA) bands induced by gamma-ray irradiation appear in the spectra of Nd:GGG crystal while only a very weak AA band appears for the Nd:GSGG crystal. This indicated that Nd:GSGG crystal has stronger ability to resist the color center formation by irradiation. The intensity of the excitation and emission spectra of Nd:GGG crystal decrease after the irradiation of 100 Mrad gamma-ray. In contrast, a luminescence strengthening effect was observed in Nd:GSGG crystal after exposure to the same irradiation dose. The results showed that the Nd:GSGG crystal is a promising candidate used under radiation environments such as in outer space.     

Interaction of impurity and intrinsic defects in forsterite and its role in the formation of spectral and luminescence properties

This paper reports on the results of investigations of the coefficients of chromium distribution between a crystal and a melt of forsterite, the absorption and luminescence spectra, and the electron paramagnetic resonance spectra of chromium centers in Mg₂SiO₄: Cr, Mg₂SiO₄: Cr: Sc, and Mg₂SiO₄: Cr: Li crystals. It has been established that the concentration dependences of these properties vary upon changing over from the range of trace concentrations of chromium, scandium, or lithium impurities in the melt to the range of higher concentrations of these impurities. The observed phenomenon is explained by the interaction of impurities with intrinsic defects of the crystal, which is called as the microimpurity trapping effect. According to the performed estimations, the concentration of predominant intrinsic defects (magnesium Frenkel defects) in the forsterite crystals grown from the melt is equal to (7.5 ± 0.3) × 10⁻⁶ atomic fractions. The energy of the formation of magnesium Frenkel defects can be estimated as 4.2 ± 0.2 eV.     

Radiation Resistance of Yb:LaSc<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> and Yb:LuYSiO<Subscript>5</Subscript> Laser Crystals

The optical transmission (OT) spectra of Yb:LaSc₃(BO₃)₄ and Yb:LuYSiO₅ laser crystals have been analyzed before and after irradiation from a ⁶⁰Co source with doses up to 45 Mrad. The OT spectra of the Yb:LuYSiO₅ crystal are found to be the same (within the measurement error) before and after irradiation. The irradiation of the 10 at.%Yb:LaSc₃(BO₃)₄ crystal significantly changes its OT spectra in a wide spectral range (330 to 700 nm). A 975-nm laser based on a previously irradiated 4 at.%Yb:LuYSiO₅ crystal has exhibited a differential efficiency of 23% under diode pumping. The up-conversion luminescence spectra in the visible range of the crystals under study have been explained.