Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes （LEDs）

The reasons for low output power of AlGaInP Light Emitting Diodes (LEDs) have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency (EQE) has serious impaction on the internal quantum efficiency (IQE), because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.     

Optimal design of green InGaN/GaN LEDs mediated by surface-plasmon gratings

We propose an optimal design for enhancing the external quantum efficiency of InGaN/GaN LEDs operating in the green spectral region, by mediating surface plasmons (SP), showing that there is plenty of potential for additional improvement in this area. Coupling the spontaneous emission from quantum wells into SP modes on metallic grating structures could enhance the internal quantum efficiency of conventional LEDs by more than twofold, and the relatively long propagating length of SPs in the green region could allow a narrow radiating angle and thus yield a threefold improvement in the extraction efficiency of radiation. Thus, our design enhances external quantum efficiency by about sixfold overall, offering a practically attainable method to realize highly efficient green SP-LEDs.     

Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier

In this study,the efficiency droop of an InGaN light-emitting diode(LED)is reduced significantly by using a pAlGaN/GaN superlattice last quantum barrier.The reduction in efficiency droop is mainly caused by the decrease of electron current leakage and the increase of hole injection efficiency,which is revealed by investigating the light currents,internal quantum efficiencies,energy band diagrams,carrier concentrations,carrier current densities,and radiative recombination efficiencies of three LED structures with the advanced physical model of semiconductor device(APSYS).     

全息技术制作二维光子晶体蓝宝石衬底提高发光二极管外量子效率

为了提高GaN基发光二极管(LED)的外量子效率,在蓝宝石衬底制作了二维光子晶体.衬底上的二维光子晶体结构采用激光全息技术和感应耦合等离子体(ICP)干法刻蚀技术制作,然后采用金属氧化物化学气相沉积(MOCVD)技术在图形蓝宝石衬底(PSS)上生长2μm厚的n型GaN层,4层量子阱和200nm厚的p型GaN层,形成LED结构.衬底上制作的二维光子晶体为六角晶格结构,晶格常数为3.8μm,刻蚀深度为800nm.LED器件光强输出测试结果显示,在PSS上制作的LED(PSS-LED)的发光强度普遍高于蓝宝石平 关键词： 全息 发光二极管 图形蓝宝石衬底 外量子效率     

Design and modeling of an efficient metamorphic dual-junction InGaP/GaAs solar cell

In this work the impact of variation in mole fraction of tunnel junction and doping concentration of top window layer are investigated on the photovoltaic performance of dual junction InGaP/GaAs solar cell on silicon substrate. How does the Si substrate help this structure to act as a low cost concentrator cell for terrestrial application is also discussed. The detailed analysis of the cell is carried out through the performance measurement such as external quantum efficiency, internal quantum efficiency, fill factor, open circuit voltage, short circuit current density, spectral density and reflectance. This simulation model provides efficiency of 30.40 % at AM1.5G spectrum under 1 sun. It provides a path to the researcher for the development of III–V multi junction solar cell at a low cost.     

Consistent determination of photoluminescence quantum efficiency for phosphors in the form of solution, plate, thin film, and powder

We have developed an improved method for easily determining the photoluminescence quantum efficiencies of transparent materials, such as solutions, glass plates, and thin films on a substrate, having various absorbances from ca. 0.05 to 1.0 at the excitation wavelength when reabsorption is negligible. The estimated accuracy for emitting semiconductor nanocrystals is ±5% for solutions. The efficiencies of non-transparent material, such as powder, together with the above-mentioned transparent materials were measured using the traditional integrating sphere method. Comparison of the two values showed that the traditional integrating sphere method usually underestimates the efficiency of powder samples ca. 10-20% depending on the optical density of the powder. This is because the emissions from more than ca. 0.2 mm deep do not leave the powder sample due to internal scattering. We also developed a method to overcome this problem.     

Photon-emission properties of quantum-dot-based single-photon sources under different excitations

The photon-emission efficiencies and photon indistinguishabilities of a single-photon source, which employs a cavity coupled with a quantum dot, are studied under above-band and resonant excitations. The results are obtained by solving master equations and by applying the quantum regression theorem. According to the study, the photon indistinguishability increases with the Purcell factor under resonant excitation, which is consistent with the increase in emission efficiency; however, these two figures of merit are inconsistent for the above-band excitation scheme. Moreover, the efficiencies, defined as the average photon number emitted in one excitation cycle, are almost the same for the two different excitation schemes, whereas the excitation power needed to reach that efficiency is much lower under resonant excitation than that for above-band excitation. These results will be helpful in improving the performances of the applications concerning indistinguishability and efficiency.     

Investigation of geometrical effects of antireflective subwavelength grating structures for optical device applications

We calculated diffraction efficiencies of subwavelength grating (SWG) structures for various optical device applications by using a rigorous coupled-wave analysis method. The geometrical effects, such as grating shape, height, and period, were investigated in order to obtain better antireflection performance. Cone shaped SWG structures with a taller height provide lower reflectance over a broadband wavelength range compared to that of flat surface and nanorod. It was found that the low reflection regions are quite related with the grating period and the refractive index of substrate materials. From the comparison between external and internal reflection of SWG structures, we also showed that the internal reflection requires shorter grating period than the case of external reflection to acquire broadband antireflection properties.     

Vacuum-deposited, nonpolymeric flexible organic light-emitting devices

We demonstrate mechanically flexible, organic light-emitting devices (OLED's) based on the nonpolymetric thin-film materials tris-(8-hydroxyquinoline) aluminum (Alq(3)) and N, N(?) -diphenyl- N, N(?) -bis(3-methylphenyl)1- 1(?) biphenyl-4, 4(?) diamine (TPD). The single heterostructure is vacuum deposited upon a transparent, lightweight, thin plastic substrate precoated with a transparent, conducting indium tin oxide thin film. The flexible OLED performance is comparable with that of conventional OLED's deposited upon glass substrates and does not deteriorate after repeated bending. The large-area (~1 - cm>(2)) devices can be bent without failure even after a permanent fold occurs if they are on the convex substrate surface or over a bend radius of ~0.5>cm if they are on the concave surface. Such devices are useful for ultralightweight, flexible, and comfortable full-color flat panel displays.     

Charge-carrier mobilities and charge conduction in a poly(p-phenylenevinylene) derivative carrying an electron-transporting moiety

A PPV derivative carrying an electron-transporting PBD moiety, with much enhanced external quantum efficiencies, has been synthesized and studied by means of time-of-flight (TOF) and J–V measurements. As a result, the mechanism of the enhanced external quantum efficiencies, i.e., the mobility balancing of positive and negative charge carriers, was revealed, as well as the space-charge limited conduction with an exponential trap distribution.     

Multi-layer ambipolar light-emitting organic field-effect transistors

Mutli-layer light-emitting organic field-effect transistors (OLETs) are shown to have high internal quantum efficiencies approaching 5%, a value much higher than the conventional organic light-emitting diodes (OLEDs). This work re-examines some data reported in the literature on OLETs and put forward a model that explains the charge transport and light emission process. Our analyses suggest that the reported improvements on the internal quantum efficiency of OLETs are directly linked to charge recombination and light emission and is independent of the drain-source current as well as the gate-induced charge density in the accumulation layer. Such independence allows the internal quantum efficiency to increase as the drain-source current decreases. The process differs from the charge transport in OLEDs where recombination and light emission are directly tied to the injected space charge densities thereby preventing the internal quantum efficiency of OLEDs to increase even when the device current is lowered.     

InGaN/GaN laser diode characterization and quantum well number effect

The effect of quantum well number on the quantum efficiency and temperature characteristics of In- GaN/GaN laser diodes （LDs） is determined and investigated. The 3-nm-thick In0.13Ca0.87N wells and two 6-am-thick GaN barriers are selected as an active region for Fabry-Perot （FP） cavity waveguide edge emitting LD. The internal quantum efficiency and internal optical loss coefficient are extracted through the simulation software for single, double, and triple InGaN/GaN quantum wells. The effects of device temperature on the laser threshold current, external differential quantum efficiency （DQE）, and output wavelength are also investigated. The external quantum efficiency and characteristic temperature are improved significantly when the quantum well number is two. It is indicated that the laser structures with many quantum wells will suffer from the inhomogeneity of the carrier density within the quantum well itself which affects the LD performance.     

Classical harmonic vibrations with micro amplitudes and low frequencies monitored by quantum entanglement

We study the entanglement dynamics of the two two-level atoms coupled with a single-mode polarized cavity field after incorporating the decoupled atomic centers of mass classical harmonic vibrations with micro amplitudes and low frequencies. We discover a new quantum mechanical measurement effect for the entanglement dynamics. We propose a quantitative vibrant factor to modify the concurrence of the two atomic states. When the vibrant frequencies are very low, we obtain that: (1) the factor depends on the relative vibrant displacements and the initial phases rather than the absolute amplitudes, and reduces the concurrence to three orders of magnitude; (2) the concurrence increases with the increase of the initial phases; (3) the frequency of the harmonic vibration can be obtained by measuring the maximal value of the concurrence during a small measurement time. These results indicate that the extremely weak classical harmonic vibrations can be monitored by the entanglement of quantum states. The effect reported in the paper always works well as long as the internal degrees of freedom of the system (regardless of unitary evolution or non-unitary evolution with time) are decoupled with the external classical harmonic vibrations of atomic centers of mass.     

量子垒生长速率对InGaN基绿光LED性能的影响

利用MOCVD技术在图形化Si(111)衬底上生长了InGaN/GaN绿光LED外延材料。在GaN量子垒的生长过程中,保持NH3流量不变,通过调节三乙基镓(TEGa)源的流量来改变垒生长速率,研究了量子垒生长速率对LED性能的影响。使用二次离子质谱仪(SIMS)和荧光显微镜(FLM)分别对量子阱的阱垒界面及晶体质量进行了表征,使用电致发光测试系统对LED光电性能进行了表征。实验结果表明,垒慢速生长,在整个测试电流密度范围内,外量子效率(EQE)明显提升。我们认为,小电流密度下,EQE的提升归结为量子阱晶体质量的改善;而大电流密度下,EQE的提升则归结为阱垒界面陡峭程度的提升。     

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

The performance of a multiple quantum well （MQW） InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density （Jsc） and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.     

Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes

In GaN-based green light-emitting diodes(LEDs) with different green quantum well numbers grown on Si(111)substrates by metal organic chemical vapor deposition are investigated. It is observed that V-shaped pits appear in the AFM images with the green quantum well number increasing from 5 to 9, and results in larger reverse-bias leakage current. Meanwhile, in the case of the sample with the number from 5 to 7 then to 9, the external quantum efficiency increases firstly, and then decreases. These phenomena may be related to the size of V-shaped pits in the active area and the distribution of electrons and holes in the active area caused by V-shaped pits. The optimal number of green quantum wells is determined to be 7.     

Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer

We investigate the performances of the near-ultraviolet(about 350 nm-360 nm) light-emitting diodes(LEDs) each with specifically designed irregular sawtooth electron blocking layer(EBL) by using the APSYS simulation program.The internal quantum efficiencies(IQEs),light output powers,carrier concentrations in the quantum wells,energy-band diagrams,and electrostatic fields are analyzed carefully.The results indicate that the LEDs with composition-graded pAl_xGa_(1-x)N irregular sawtooth EBLs have better performances than their counterparts with stationary component p-AlGaN EBLs.The improvements can be attributed to the improved polarization field in EBL and active region as well as the alleviation of band bending in the EBL/p-AlGaN interface,which results in less electron leakage and better hole injection efficiency,thus reducing efficiency droop and enhancing the radiative recombination rate.     

ITO‐free top emitting organic light emitting diodes with enhanced light out‐coupling

Bottom emitting organic light emitting diodes (OLEDs) can suffer from lower external quantum efficiencies (EQE) due to inefficient out‐coupling of the generated light. Herein, it is demonstrated that the current efficiency and EQE of red, yellow, and blue fluorescent single layer polymer OLEDs is significantly enhanced when a MoO_x(5 nm)/Ag(10 nm)/MoO_x(40 nm) stack is used as the transparent anode in a top emitting OLED structure. A maximum current efficiency and EQE of 21.2 cd/A and 6.7%, respectively, was achieved for a yellow OLED, while a blue OLED achieved a maximum of 16.5 cd/A and 10.1%, respectively. The increase in light out‐coupling from the top‐emitting OLEDs led to increase in efficiency by a factor of up to 2.2 relative to the optimised bottom emitting devices, which is the best out‐coupling reported using solution processed polymers in a simple architecture and a significant step forward for their use in large area lighting and displays.     

Measurement efficiency and n-shot readout of spin qubits

We consider electron spin qubits in quantum dots and define a measurement efficiency e to characterize reliable measurements via n-shot readouts. We propose various implementations based on a double dot and a quantum point contact (QPC) and show that the associated efficiencies e vary between 50% and 100%, allowing single-shot readout in the latter case. We model the readout microscopically and derive its time dynamics in terms of a generalized master equation, calculate the QPC current, and show that it allows spin readout under realistic conditions.     

垒温对硅衬底GaN基蓝光LED发光效率的影响

用MOCVD技术在硅衬底上生长了GaN基蓝光LED外延材料,研究了有源层多量子阱中垒的生长温度对发光效率的影响,获得了不同电流密度下外量子效率(EQE)随垒温的变化关系。结果表明,在860~915℃范围内,发光效率随着垒温的上升而上升。当垒温超过915℃后,发光效率大幅下降。这一EL特性与X光双晶衍射和二次离子质谱所获得的阱垒界面陡峭程度有明显的对应关系,界面越陡峭则发光效率越高。垒温过高使界面变差的原因归结为阱垒界面的原子扩散。垒温偏低使界面变差的原因归结为垒对前一个量子阱界面的修复作用和为后一个量子阱提供台阶流界面的能力偏弱。外延生长时的最佳垒温范围为895~915℃。