Spin-wave resonance in Co/Pd magnetic multilayers and NiFe/Cu/NiFe three-layered films

The spectrum of standing spin waves has been detected by the ferromagnetic resonance method in NiFe(740 Å)/Cu/NiFe(740 Å) three-layered film structure in the perpendicular configuration for the copper thickness d _Cu ≤ 30 Å. At thicknesses d _Cu > 30 Å, the resonance absorption curve is a superposition of two spinwave resonance spectra from individual ferromagnetic NiFe layers. For Co/Pd multilayer films, united spinwave responance spectra have also been observed at thicknesses of the paramagnetic palladium layer up to d _Pd < 30 Å. The partial exchange stiffness has been calculated for a spin wave propagating across the Pd layer (A _Pd = 0.1 × 10^?6 erg/cm). This value is always positive (up to the critical thickness of the palladium interlayer d _Pd < d _c) or equal to zero (d _Pd > d _c).     

Quartz crystal microbalance measurements of O/Ti and CO/Ti atom ratios on very thin Ti films

The adsorption of O₂ and CO on Ti films with thicknesses in the range 0–200 Å was investigated by quartz crystal microbalance (QCM) measurements. The O/Ti and CO/Ti ratios in the limit of zero film thickness was determined to be 1.5 and 0.5 respectively using the film thickness as a parameter. This result suggests that the oxide formed is Ti₂O₃. The Ti + O₂ results are discussed in a model where the thinnest metal films are assumed to consist of metal islands. From the model an “oxidation depth” of ≈10 Å is estimated.     

Long-wave X-ray radiation mirrors

Problems of obtaining mirrors for long-wave length (200-20 Å) X-radiation are discussed. Results of the investigation of roentgenooptical characteristics of multilayer periodical C-Re, C-W and C-Ta structures with periods 60–80 Å have been analyzed. The layer thickness of the heavy elements varied from 3 to 25 Å. The following characteristics have been recorded in the wavelength range λ = 50–80 Å; reflection coefficient up to 20%, resolution λ/Δλ = 7–14, width of the angular dependence R(θ)Δθ ≈ 2°. The number of effectively reflecting pairs of layers, N_max = 17, has been determined from the position of secondary diffraction maxima.     

Structural Analysis of Aluminum Oxyhydroxide Aerogel by Small Angle X-Ray Scattering

The work presents studies on the microstructure and mesostructure of nanostructured aluminum oxyhydroxide formed as a high porous monolithic material through the surface oxidation of aluminum liquidmetal solution in mercury in a temperature- and humidity-controlled air atmosphere. The methods of X-ray diffraction analysis, thermal analysis, the low temperature adsorption of nitrogen vapors, transmission electron microscopy, small-angle and very small-angle neutron scattering, and small-angle X-ray scattering are used for comprehensive investigation of the samples synthesized at 25°С as well as that annealed at temperatures up to 1150°C. It is found that the structure of the monolithic samples can be described within the framework of a three-level model involving primary heterogeneities (typical length scale of rc ≈ 9–19 Å), forming fibrils (cross-sectional radius R ≈ 36–43 Å and length L ≈ 3200–3300 Å) or lamellae (thickness T ≈ 110 Å and width W ≈ 3050 Å) which, in turn, are integrated into large-scale aggregates (typical size R _c ≈ 1.25–1.4 μm) with an insignificant surface roughness. It is shown that a high specific surface (~200 m²/g) typical for the initial sample is maintained upon its thermal annealing up to 900°С, and it decreases to 100 m²/g after heat treatment at 1150°С due to fibrillary agglomeration.     

具有垂直各向异性(Pt/Co)n/FeMn多层膜的交换偏置

采用磁控溅射方法制备了以Pt为缓冲层和保护层的具有垂直各向异性(Pt/Co)_n/ FeMn多层膜.研究结果表明，多层膜的垂直交换偏置场H_ex和反铁磁层厚度的关 系与其具有平面各向异性的交换偏置场随反铁磁层厚度变化趋势相近.随着铁磁层调制周期 数的增加，垂直交换偏置场H_ex相应减小，并且与铁磁层的调制周期数近似成反 比关系.(Pt/Co)₃/FeMn的垂直交换偏置场H_ex已经达到22.3kA/m.为 关键词： 交换偏置 垂直各向异性 多层膜     

Anomalous temperature dependence of the magnetoresistance in Co/Cu multilayers

An anomalous temperature dependence of magnetoresistance (MR) of Co/Cu multilayer films witha ～3 Å thick magnetic layer has been established experimentally. The temperature of the MR maximum T _max is shown to coincide with the Néel temperature. The variation of T _max with the Cu layer thickness follows an oscillatory pattern.     

The role of interdiffusion and spatial confinement in the formation of resonant raman spectra of Ge/Si(100) heterostructures with quantum-dot arrays

The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy. It is revealed that the Ge-Ge and Si-Ge vibrational modes are considerably enhanced upon excitation of excitons between the valence band Λ₃ and the conduction band Λ₁ (the E ₁ and E ₁ + Δ₁ transitions). This makes it possible to observe the Raman spectrum of very small amounts of germanium, such as one layer of quantum dots with a germanium layer thickness of ≈10 Å. The enhancement of these modes suggests a strong electron-phonon interaction of the vibrational modes with the E ₁ and E ₁ + Δ₁ excitons in the quantum dot. It is demonstrated that the frequency of the Ge-Ge mode decreases by 10 cm^?1 with a decrease in the thickness of the Ge layer from 10 to 6 Å due to the spatial-confinement effect. The optimum thickness of the Ge layer for which the size dispersion of quantum dots is minimum is determined.     

Superconductivity of Nb/Cu superlattices

The superconducting transition temperature T_c of Nb/Cu superlattices has been investigated as a function of layer thickness. The dependence of T_c above 300 Å layer thickness agrees well with proximity effect theory with no adjustable parameters. Below 300 Å, the data in conjunction with current proximity theory shows that T_c of Nb decreases with layer thickness. This is interpreted as changes in the electronic density of states due to a decrease in the mean-free path.     

Magnetic annealing of the ion-beam sputtered IrMn/CoFeB bilayers – positive exchange bias and coercivity behaviour

The effect of optimum dilution of antiferromagnetic (AF)/ferromagnetic (FM) interface necessary for observance of positive exchange bias in ion-beam sputtered Si/Ir₂₂Mn₇₈ (t _AF = 12, 18, 24 nm)/Co₂₀Fe₆₀B₂₀(t _FM = 6,9,15 nm) exchange coupled bilayers is investigated by magnetic annealing at 380, 420 and 460 °C for 1 h at 5 × 10^-6 Torr in presence of 500 Oe magnetic field. While the coercivity of the exchange coupled FM layer decreases with the increase in annealing temperature irrespective of the value of t _AF or t _FM, the hysteresis loops however shift by ≈+ 10 Oe whenever the coercivity drops in the 10–15 Oe range. This is consistent with the phase diagram of exchange bias field and coercivity derived from Meiklejohn and Bean model. The X-ray diffraction and X-ray reflectivity measurements confirmed that the texture, grain size and interface roughness of IrMn/CoFeB bilayers are thickness dependent and are correlated to the observed magnetic response of the bilayers. The results establish that optimum dilution of the IrMn/CoFeB interface by thermally diffused Mn-spins is necessary in inducing the effective coupling between the IrMn domains and diluted CoFeB layer. It is further shown that the annealing temperature required for the optimum dilution of the CoFeB interface critically depends on the thickness of the layers.     

Ferromagnetic and spin-wave resonance in Ni0.8Fe0.2/Dy1−x Cox bilayer films

The standing spin wave spectra of Ni_0.8Fe_0.2(1000–3000 Å)/(Dy_1?x Co_x(700 Å) bilayer exchange-biased films with two different (precompensation Dy_0.2Co_0.8 and postcompensation Dy_0.3Co_0.7) compositions of the hard magnetic layer are analyzed. Measurements are performed at room temperature. It is found that the effective magnetic layer thickness (d _eff=d ₀±Δd), which determines the wave vectors of the first modes in the spectrum, differs from the d ₀ value specified in film technology. The sign of |Δd| ～ 500 Å is governed by the composition of the DyCo hard magnetic layer.     

Theoretical investigation of exchange bias

The exchange bias of bilayer magnetic films consisting of ferromagnetic (FM) and antiferromagnetic (AFM) layers in an uncompensated case is studied by use of the many-body Green's function method of quantum statistical theory. The effects of the layer thickness and temperature and the interfacial coupling strength on the exchange bias H_E are investigated. The dependence of the exchange bias H_E on the FM layer thickness and temperature is qualitatively in agreement with experimental results. When temperature varies, both the coercivity H_C and H_E decrease with the temperature increasing. For each FM thickness, there exists a least AFM thickness in which the exchange bias occurs, which is called pinning thickness.     

Exchange bias in (1 1 0)-orientated Bi0.9La0.1FeO3/La0.5Ca0.5MnO3 films

We performed a systematic study on the exchange bias in (1 1 0)-orientated Bi_0.9La_0.1FeO₃/La_0.5Ca_0.5MnO₃ (BLFO/LCMO) heterostructure with a fixed BLFO film thickness of 600 nm and different LCMO layers ranging from t=0 to 30 nm. The LCMO is found to be weakly ferromagnetic, with the Curie temperature descending from ∼225 K to 0 as the layer thickness decreases from 30 nm to 3 nm. The main magnetic contributions come from the BLFO film, and the areal magnetization ratio is 1:0.07 for t=5 nm and 1:0.82 for t=30 nm for BLFO to LCMO at the temperature of 5 K. Further experiments show the presence of significant exchange bias, and it is, at the temperature of 10 K, ∼40 Oe for t=0 and ∼260 Oe for t=30 nm. The exchange bias reduces dramatically upon warming and disappears above the blocking temperature of the spin-glasslike behavior observed in the samples. The possible origin for exchange bias is discussed.     

Erosion of solid D2 by 2 keV electrons

The erosion/sputtering of D₂ films on an Au-substrate by 2 keV electrons is roughly inversely proportional to film thicknesses below ≈650 Å. The erosion yield decreases from 200 atoms/electron at 25 Å to 7.8 ± 0.5 for “bulk” targets. The thickness dependent region is apparently unrelated to the penetration depth of the electrons.     

Formation of the Co/Si(110) interface: Phase composition and magnetic properties

The formation of the Co/Si(110)16 × 2 interface and its magnetic properties are studied by high-energy-resolution photoelectron spectroscopy using synchrotron radiation and magnetic linear dichroism in the photoemission of core electrons. It is shown that a cobalt coating less than 7 Å thick deposited on the silicon surface at room temperature results in the formation of an ultrathin (1.7 Å) interfacial cobalt silicide layer and a layer of silicon-cobalt solid solution. The ferromagnetic ordering of the interface is observed at an evaporation dose corresponding to 6–7 Å in which case a cobalt metal film begins to grow on the solid solution layer. During 300°C-annealing of the sample covered by a nanometer-thick cobalt layer, the metal film gradually disappears and four silicide phases arise: metastable ferromagnetic silicide Co₃Si and three stable nonmagnetic silicides (Co₂Si, CoSi, and CoSi₂).     

Magnetic properties and structures of Fe/MgF2 multilayered films

Multilayers composed of Fe and MgF₂ with layer thicknesses between 9 Å and 100 Å and of 30 Å, respectively, were prepared with an ultrahigh-vacuum deposition technique. Medium-angle X-ray data show that the Fe layers in the BCC phase have considerable (1 1 0) texture. Periodicity due to multilayered structures was confirmed by a small-angle X-ray diffraction study and cross-section transmission electron microscope for films with Fe layer thicknesses >45 Å. In an Fe/MgF₂(9 Å/30 Å) sample, an island structure for the Fe layers was suggested by the existence of superparamagnetism in a film. At 4.2 K, enhancements of both magnetization and hyperfine field were observed in films having Fe layers thinner than 40 Å. The maxima in the magnetization (233 emu/g of Fe) and in the average hyperfine field (390 kOe) at 4.2 K were found in an Fe/MgF₂(9 Å/30 Å) film and were approximately 105% and 115% that of the bulk α-Fe, respectively. The thickness dependence suggests a 12% enhancement in the magnetic moment of interface Fe atoms. No exchange bias was found in the films, implying that antiferromagnetic fluorides are not formed at the interface, which is different from the case of Fe/LiF and Fe/CaF₂ multilayers.     

On the stability of bcc Co in Co/Fe superlattices an NMR and XRD study

While RHEED observations show that 10 to 11 As is the stability limit for an open bcc Co layer when grown on an Fe substrate, our XRD and NMR studies have shown that, in MBE grown Co/Fe superlattices, cobalt can be stabilised in a bcc structure up to a critical Co thickness of 21 Ås. In order to understand this apparent discrepancy, NMR experiments have been carried out in Co_x/Fe_y multilayers with thickness varying in the range 5 Å < x < 42 Å and 24 Å < y < 60 Å, grown on GaAs (1 1 0) as well as on MgO (1 0 0) substrates. The analysis of the chemical short range order by NMR concludes that the larger bcc Co thickness observed in superlattices results from the formation of a rather homogeneous CoFe_20% bcc alloy which contains the supplementary 10–11 As of Co and which coexists with pure Co grains. The concentration of about 20% Fe in the alloyed part of the Co layer happens to be close to the stability limit for a bcc structure in the equilibrium phase diagram of bulk CoFe alloys. However, while a mixture of bcc and fcc phases is observed in bulk alloys, the bcc structure is preserved in all phases under the MBE growth conditions and below the critical thickness. Above the critical thickness amixture of bcc Co, bcc CoFe and hcp Co is observed.     

Magnetotransport in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions: in-plane effective mass,quantum and transport mobilities of 2D electrons

Shubnikov–de Haas (SdH) and Hall effect measurements, performed in the temperature range between 3.3 and 20 K and at magnetic fields up to 2.3 T, have been used to investigate the electronic transport properties of lattice-matched In_0.53Ga_0.47As/In_0.52Al_0.48As heterojunctions. The spacer layer thickness (t_S) in modulation-doped samples was in the range between 0 and 400 Å. SdH oscillations indicate that two subbands are already occupied for all samples except for that witht_S =  400 Å. The carrier density in each subband, Fermi energy and subband separation have been determined from the periods of the SdH oscillations. The in-plane effective mass (m ^* ) and the quantum lifetime (τ_q) of 2D electrons in each subband have been obtained from the temperature and magnetic field dependences of the amplitude of SdH oscillations, respectively. The 2D carrier density (N₁) in the first subband decreases rapidly with increasing spacer thickness, while that (N₂) in the second subband, which is much smaller thanN₁ , decreases slightly with increasing spacer thickness from 0 to 200 Å. The in-plane effective mass of 2D electrons is similar to that of electrons in bulk In_0.53Ga_0.47As and show no dependence on spacer thickness. The quantum mobility of 2D electrons is essentially independent of the thickness of the spacer layer in the range between 0 and 200 Å. It is, however, markedly higher for the samples with a 400 Å thick spacer layer. The quantum mobility of 2D electrons is substantially smaller than the transport mobility which is obtained from the Hall effect measurements at low magnetic fields. The transport mobility of 2D electrons in the first subband is substantially higher than that of electrons in the second subband for all samples with double subband occupancy. The results obtained for transport-to-quantum lifetime ratios suggest that the scattering of electrons in the first subband is, on average, forward displaced in momentum space, while the electrons in the second subband undergo mainly large-angle scattering.     

Antiferromagnet IrMn thickness dependence in exchange-biased perpendicular magnetic anisotropy based on CoFe/Pt/CoFe/[IrMn(tIrMn)] multilayers

The effect of the antiferromagnetic IrMn thickness upon the magnetic properties of CoFe/Pt/CoFe/[IrMn(t_IrMn)] multilayers is studied. An oscillatory interlayer coupling (IEC) has been shown in pinned CoFe/Pt(t_Pt)/CoFe/IrMn multilayers with perpendicular anisotropy. The period of oscillation corresponds to about 2 monolayers of Pt. The oscillatory behavior of IEC depends on the nonmagnetic metallic Pt thickness and is thought to be related to the antiferromagnetic ordering induced by the IrMn layer. From the extraordinary Hall voltage amplitude (EHA) curves as function of IrMn thickness, we report that the oscillation dependence of IEC for the [CoFe/Pt/CoFe] multilayer system induced by IrMn with spacer-layer thickness is a important features of perpendicular exchange biased system.     

Magnetooptical,optical, and magnetotransport properties of Co/Cu superlattices with ultrathin cobalt layers

We investigated the field dependences of the magnetization and magnetoresistance of superlattices [Co(t _x, Å)/Cu(9.6 Å)]30 prepared by magnetron sputtering, differing in the thickness of cobalt layers (0.3 Å ≤ t _Co ≤ 15 Å). The optical and magnetooptical properties of these objects were studied by ellipsometry in the spectral region of hω= 0.09–6.2 eV and with the help of the transverse Kerr effect (hω= 0.5–6.2 eV). In the curves of an off-diagonal component of the tensor of the optical conductivity of superlattices with t _Co = 3–15 Å, a structure of oscillatory type (“loop”) was detected in the ultraviolet region, resulting from the exchange splitting of the 3d band in the energy spectrum of the face-centered cubic structure of cobalt (fcc Co). Based on magnetic experiments and measurements of the transverse Kerr effect, we found the presence of a superparamagnetic phase in Co/Cu superlattices with a thickness of the cobalt layers of 3 and 2 Å. The transition from superlattices with solid ferromagnetic layers to superparamagnetic cluster-layered nanostructures and further to the structures based on Co and Cu (t _Co = 0.3–1 Å) with a Kondo-like characteristics of the electrical resistivity at low temperatures is analyzed.