Hydrogen-induced metallization on Ge(1 1 1) c(2 × 8)

We have studied hydrogen adsorption on the Ge(1 1 1) c(2 × 8) surface using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPES). We find that atomic hydrogen preferentially adsorbs on rest atom sites. The neighbouring adatoms appear higher in STM images, which clearly indicates a charge transfer from the rest atom states to the adatom states. The surface states near the Fermi-level have been followed by ARPES as function of H exposure. Initially, there is strong emission from the rest atom states but no emission at the Fermi-level which confirms the semiconducting character of the c(2 × 8) surface. With increasing H exposure a structure develops in the close vicinity of the Fermi-level. The energy position clearly indicates a metallic character of the H-adsorbed surface. Since the only change in the STM images is the increased brightness of the adatoms neighbouring a H-terminated rest atom, we identify the emission at the Fermi-level with these adatom states.     

Atomic diffusion inside a STM junction: simulations by kinetic Monte Carlo coupled to tunneling current calculations

The influence of a static scanning tunneling microscope (STM) tip on the diffusion of xenon atoms adsorbed on a Cu(1 1 0) stepped surface is studied. Semi-empirical potentials for the Xe-surface interaction and a N-body energy based method for the Xe-tip contribution are used to calculate the adsorption energy of adsorbates in the STM junction. First, we analyse the variation of this energy when the adatom is placed near a step edge and for different tip positions. When the tip is situated in the neighbourhood of the step edge, the Ehrlich-Schwoebel barrier experienced by the adatom is lowered. This opens a specific diffusion channel, allowing a possible crossing of the step edge. Second, through a kinetic Monte Carlo approach coupled to the elastic scattering quantum chemistry method, the noisy tunneling current created by the random motion of diffusing atoms in the vicinity of the tip can be analyzed. We show that, by counting the number of diffusion events, we can determine effective barriers related to the most dominant processes contributing to the diffusion at a particular temperature. We also demonstrate that the interaction mode of the tip (attractive or imaging) greatly modifies the diffusion processes.     

Surface atom displacement processes

Progress in field ion microscope studies of adatom displacements on metal surfaces is reviewed. It is concluded that of the displacement processes that contribute to surface diffusion only displacements between low-coordination (terrace) sites are well characterised. Procedures and preliminary results of FIM studies of adatom displacement over steps are described. Activation energies measured for passage of Ta, W, Re, Ir and Pt adatoms across (110) W steps are found to equal activation energies for diffusion over (110) W, despite the highly reflecting character of the step for all the adsorbates except Pt. Displacements of adatoms interacting with other adatoms are discussed. Results presented show that interaction of transition metal adatoms forming close-packed dimers on (110) W is rather weak, with a minimum interaction energy [?U(r) < 4kJ/mol] for Re₂ corresponding to a very weak attraction for Re adatoms 0.27 nm apart.     

A straight domain boundary of single-atom width on a Si(111)-(7 × 7) surface

Using scanning tunneling microscopy (STM), we have observed an antiphase domain boundary of single-atom width on a Si(111)-(7 × 7) surface. The extra row of adatoms forming the boundary lies on the unfaulted half of the 7 × 7 unit cell, in agreement with total energy calculations using the first-principles self-consistent pseudofunction method. The filled-state STM image shows a missing interior adatom on the unfaulted half, in agreement with calculations of the partial density of states of an adatom surrounded by three rest-atoms.     

Atomic motion induced by a scanning tunneling microscope tip on the Si(111) surface

Using scanning tunneling microscopy (STM), we have observed the STM-tip-induced atomic motion of the Si adatoms in the Si(111)−(7 × 7) surface structure near out-of-phase boundaries in the structure. In order to excite the motion of Si adatoms, the tip was fixed at a certain height at every pixel in the lateral scan and the sample bias was changed stepwise. Although the motion of Si adatoms occurs in a complicated manner, analysis shows that its elemental process is quite simple. Namely, the Si adatom jumps from an occupied T₄ site to an unoccupied T₄ site.     

A local view of the Kondo effect: Scanning tunneling spectroscopy

The fascinating many-body physics involved in the interaction of a single magnetic impurity with the conduction electrons of its nonmagnetic metallic host is reflected in unconventional phenomena in magnetism, transport properties and the specific heat. Characteristic low-energy excitations, termed the Kondo resonance, are generally believed to be responsible for this striking behaviour. However, in spite of an intense research for over more than 30 years, a direct spectroscopic observation of the Kondo resonance on individual magnetic adatoms withstood experimental efforts hitherto. The development of low-temperature scanning tunneling microscopes (STM) operating under ultrahigh vacuum (UHV) conditions has provided new opportunities for investigating locally the electronic structure at surfaces. At low temperatures, due to the reduced broadening of the Fermi level of the STM tip and the sample, rather high energy resolution (≤ 1 meV) in scanning tunneling spectroscopy (STS) is achievable. Moreover, the absence of diffusion together with the spatial resolution of the STM enables detailed studies of electronic states on and near single adsorbed atoms and other nanoscale structures. Recently, for the first time, two such STS/STM experiments spatially resolved the electronic properties of individual magnetic adatoms displaying the Kondo effect. In particular, the observed Fano lineshape of the Kondo resonance reveals unambiguously the details of the quantum mechanical interference between the localized orbital and the conduction electrons on an atomic length scale [1,2]. This achievement of the detection of individual magnetic atoms with atomic resolution opens new perspectives for probing magnetic nanostructures.     

Manipulation of Cu adatoms on anisotropic Cu surfaces using scanning tunneling microscopy

The physical origin of tip-induced motion of Cu adatoms on anisotropic Cu surfaces is investigated by means of total energy calculations which are based on three different semi-empirical potentials. The calculations show that for certain tip–adatom distances the activation barrier for the adatom to move towards the tip disappears completely, whereas the barrier in the opposite direction increases and the adatom experiences an attractive force towards the tip. The general trends do not depend on the shape and chemical nature of the tip, but quantitatively there appear differences.     

Adsorbate-induced charge density oscillations and many-body effects in STM image

Many-body effects on the STM imaged charge density oscillations around a magnetic adatom on a nonmagnetic metal surface are investigated with the aid of the Newns-Anderson model. It is shown that the many-body effects due to Coulomb interactions between electrons on a localized orbital of the adatom can be observed in the strong temperature dependence of the charge density image on and around the adatom. In addition, it is suggested that the Kondo resonance can be observed in this system as protrusions in the spatially resolved spectroscopic STM images and that the Fano resonance can be also observed as an asymmetry of the differential conductance versus energy (bias) curve about the Fermi level.     

Monolayered adatom aggregation induced by metallofullerene molecules on Cu(100)

The adsorption and self-assembly of Gd@C₈₂ molecules on Cu(100) surface have been investigated using scanning tunneling microscopy (STM). The metallofullerene molecules in the assemblies showed two characteristic apparent heights in the STM images. STM manipulation and spectroscopy was performed and revealed the formation of Cu adatom islands underneath the Gd@C₈₂ molecules. The monolayered Cu aggregates were resulted from the adatom–molecule complexation, which is supported by density functional theory (DFT) calculations that show charge transfer and electrostatic interactions between Gd@C₈₂ and adatoms. In addition, sub-molecularly resolved STM images demonstrated the structural and orientational ordering of Gd@C₈₂ assemblies upon thermal annealing. DFT calculations demonstrated that Gd atom located at the lower part of the carbon cage is a favored adsorption configuration for Gd@C₈₂ molecules adsorbed on Cu(100).     

Surface defects created by low energy (20 < E < 240 eV) ion bombardment of Ge(001)

Surface defects created on Ge(001) exposed to low energy Xe ions are characterized by in situ scanning tunneling microscopy (STM). The temperature of the sample during ion bombardment is 165 C and ion energies range from 20 to 240 eV. The ion collisions create defects (vacancies and adatoms) which nucleate and form vacancy and adatom islands. For fixed total vacancy creation, the vacancy island number density increases with increasing ion energy: the vacancy island number density is 1.6 × 10⁻²⁰ cm⁻² for 40 eV ion bombardment and increases to 4.4 × 10⁻²⁰ cm⁻² for 240 eV ion bombardment. The increased nucleation rate for vacancies is attributed to clustering of defects. The sputtering yield of Ge(001) is also measured by STM. The sputtering yield for 20 eV ions is approximately 10⁻³ per ion but the net yield for surface defects (sum of adatoms and vacancies) is an order of magnitude higher, 10⁻², due to adatom-vacancy pair creation.     

Reliable lateral manipulation of a single Ag adatom on a Ag(1 1 1) surface with a trimer-apex tip

We study the reliability of the lateral manipulation of a single Ag adatom on a Ag(1 1 1) surface with the single-atom and trimer-apex tips based on molecular statics simulations using surface embedded-atom-method potential. The dependence of the manipulation reliability on tip height and orientation is investigated. For the single-atom tip the manipulation reliability increases monotonically with decreasing tip height, which is owing to the strengthened lateral tip-adatom interaction as the tip height lowers. For the trimer-apex tip, the manipulation reliability is sensitive to the tip orientation in the lower tip-height range, while in the higher tip-height range the manipulation reliability is independent of the tip orientation and moreover can be greatly improved due to the strong vertical attraction of the tip on the adatom as compared to the single-atom tip. We also compare these results to those for manipulating single Cu adatoms on the Cu(1 1 1) surface, reveal the underlying physics, and propose the method to improve the manipulation reliability for different systems.     

Early stages of vanadium deposition on Si(1 1 1)-7 × 7

We investigate the low-coverage regime of vanadium deposition on the Si(1 1 1)-7 × 7 surface using a combination of scanning tunnelling microscopy (STM) and density-functional theory (DFT) adsorption energy calculations. We theoretically identify the most stable structures in this system: (i) substitutional vanadium atoms at silicon adatom positions; (ii) interstitial vanadium atoms between silicon adatoms and rest atoms; and (iii) interstitial vanadium - silicon adatom vacancy complexes. STM images reveal two simple vanadium-related features near the Si adatom positions: bright spots at both polarities (BB) and dark spots for empty and bright spots for filled states (DB). We relate the BB spots to the interstitial structures and the DB spots to substitutional structures.     

Vertical manipulation of native adatoms on the InAs(111)A surface

We achieved the repositioning of native In adatoms on the polar III-V semiconductor surface InAs(111)A-(2?×?2) with atomic precision in a scanning tunnelling microscope (STM) operated at 5?K. The repositioning is performed by vertical manipulation, i.e., a reversible transfer of an individual adatom between the surface and the STM tip. Surface-to-tip transfer is achieved by a stepwise vibrational excitation of the adsorbate-surface bond via inelastic electron tunnelling assisted by the tip-induced electric field. In contrast, tip-to-surface back-transfer occurs upon tip-surface point contact formation governed by short-range adhesive forces between the surface and the In atom located at the tip apex. In addition, we found that carrier transport through the point contact is not of ballistic nature but is due to electron tunnelling. The vertical manipulation scheme used here enables us to assemble nanostructures of diverse sizes and shapes with the In adatoms residing on vacancy sites of the (2?×?2)-reconstructed surface (nearest-neighbour vacancy spacing: 8.57??).     

On the mechanism of chemisorption on magnetic semiconductors

A mechanism of chemisorption on magnetic semiconductors is considered at T = 0. The adatoms behave with respect to the electronic spectrum of a crystal as surface donors. Interaction of the valence electron of the atom with the spins of the crystal (s-d interaction) results in the formation of a ferromagnetic microregion in the vicinity of the adsorbed atom. The one- and two-electron bond of the adatom with the crystal is considered. The tendency for the adatom ferromagnetic regions to merge results in an effective attraction between the adatoms; moreover many adatoms can attract each other simultaneously.     

Flux-dependent transport through an Aharonov-Bohm interferometer with embedded multiple coupled quantum dots

The electron transport through an Aharonov-Bohm (AB) interferometer with embedded four coupled quantum dots (QDs) is studied with the Green's function technique. The QDs are coupled to each other by the hopping integral tc. Two among them connect with the left lead and the other two with the right lead by the tunneling matrix element T which incorporates the effects of the applied magnetic field φ. The linear conductance spectra swap between the molecular levels and the atomic states by adjusting tc and T. Fano effect appears when the electrons tunnel through different channels contributed by different QDs energy levels, and the Fano resonance peaks split for large tc. The Fano factor can be manipulated by tc, T, φ, and the QD energy levels.     

Surface resonant states and the adsorption of 4d atoms on Mo (110) and (100)

The adsorptive properties of Mo (110) and Mo (100) relative to 4d transition adatoms are investigated and compared using a tight-binding model. The surface resonant states existing on the (100) free surface are shown to have a drastic influence. On Mo (110) a Mo adatom retains a strong atomic character while on Mo (100) one approaches a surface molecule limit which is due to a strong interaction between the adsorbate atomic state and the free surface resonance. Consequently a large anisotropy of binding energy is found. The case of different 4d adatoms is also discussed.     

An ab initio-based approach to adsorption-desorption behavior of Si adatoms on GaAs(1 1 1)A-(2 × 2) surfaces

The adsorption-desorption behavior of Si adatoms on GaAs(1 1 1)A-(2 × 2) surfaces is investigated using our ab initio-based approach, in which adsorption and desorption behavior of Si adatoms is described by comparing the calculated desorption energy obtained by total-energy electronic-structure calculations with the chemical potential estimated by quantum statistical mechanics. We find that the Si adsorption at the Ga-vacancy site on the (2 × 2) surfaces with As adatoms occurs less than 1140-1590 K while the adsorption without As adatom does less than 630-900 K. The change in adsorption temperature of Si adatoms by As adatoms is due to self-surfactant effects of As adatoms: the promotion of the Si adsorption triggered by As adatoms is found to be interpreted in terms of the band-energy stabilization. Furthermore, the stable temperature range for Si adsorbed surfaces with As adatoms agrees with the experimental results. The obtained results provide a firm theoretical framework to clarify n-type doping processes during GaAs epitaxial growth.     

Lattice steps and adatom binding on W(211)

The role of a lattice step in affecting the binding of adatoms in its vicinity has been explored for tungsten as well as rhenium adatoms on the (211) plane of tungsten. On this plane adatoms are confined to sites in a one-dimensional channel along [1&#x0304;11]. From the equilibrium distribution of an adatom over all sites in a channel it is possible to derive the relative free energy of binding at the different sites. Such measurements have been made using a field ion microscope supported by an automated data handling system. Contrary to expectations based on potential calculations using standard pair interactions, atom binding is found to be stronger close to the plane edges rather than in the center, where the number of distant neighbors around the adatom is larger. These edge effects have a surprisingly long range, extending at least over three sites, and are strongly dependent upon the chemical identity of the adatom.     

Scanning tunneling microscopy study on initial stage of atomic hydrogen adsorption on the Si(1 1 1) 7 × 7 surface

Initial hydrogen adsorption on the Si(1 1 1) 7 × 7 surface was studied by scanning tunneling microscopy (STM) in an ultrahigh vacuum. Room temperature adsorbed hydrogen on the adatom in the 7 × 7 reconstruction led to depression of adatoms in the STM images. The hydrogen uptake curve at the adatom site as a function of hydrogen exposure time was well represented by Langmuir adsorption. No preferential adsorption was seen among four inequivalent adatoms in the 7 × 7 reconstruction. Adsorption of the adjacent center and corner adatoms respectively showed ∼10% higher adsorption. Even though the number of reacted adatoms in the half unit of the 7 × 7 reconstruction was statistically random, the number of reacted adatoms in the nearest neighbor half unit was enhanced as the number of reacted sites increased in the half unit.     

The theoretical and experimental study of the ionization processes during the low energy ion sputtering

The process by which atoms are ionized as they are sputtered from a metal surface has been analyzed both theoretically and experimentally. In the theoretical part the expressions for ionization coefficient R⁺ of atoms having the ionization energy much larger than the metal work function have been derived using a molecular orbital method. The effect of the level crossing was estimated in an approximate way. In the experimental part the SIMS experiments on clean Ni and Al surfaces and on Ni surface covered with a submonolayer of adsorbed K, Na and Al are reported. It has been found and it is for the first time reported that the energy distribution of ions sputtered from a submonolayer of adatoms is independent of energy (200–2500 eV) and mass (Ar⁺ Xe⁺ of incident ions and depends only upon the adsorption energy of the adatom. The energy distribution of ions sputtered from bulk samples has been found dependent on the primary ion energy. The measurement of the absolute value of R⁺ has shown that there is a strong correlation between the number of the adatom valence d-electrons and the value of R⁺, the value of R⁺ being smaller for atoms with more d-electrons. These experimental data have been compared with the theoretical expressions and the important role of the mechanism which takes into account the bending of the adatom energy level has been assessed.