Well width‐dependent electron Raman scattering in ZnS/CdSe cylindrical quantum dot quantum well

Electron Raman scattering (ERS) is investigated in ZnS/CdSe cylindrical quantum dot quantum well (QDQW). The differential cross section (DCS) is calculated as a function of the scattering frequency and the sizes of QDQW. Single parabolic conduction and valence bands are assumed. Different scattering configurations are discussed and the selection rules for the processes are also studied. Singularities in the spectrum are found and interpreted. The ERS studied here can be used to provide direct information about the electron band structure of these systems. Copyright © 2008 John Wiley & Sons, Ltd.     

Parameter-dependent photon echo induced in CdSe/ZnS quantum dot quantum well

The two pulse photon echo (2PPE) phenomena induced by the 1s-1s electronic transition in CdSe/ZnS quantum dot quantum well (QDQW) has been studied by employing semiconductor Bloch equations. The energy eigenvalues and eigenfunctions of electrons and holes have been obtained by solving the stationary Schrödinger equation under effective-mass approximation. The Coulomb interaction, which changes with the size variation of QDQW, has been calculated and analyzed as a perturbation. The variations of the electric transition dipole moment and the energy interval with the changing of the size and structure of the QDQW have also been obtained. It has been shown from the numerical calculation results that the efficiency of 2PPE can be controlled by the variation of the size and structure of the QDQW and the mechanism has been explained in terms of the quantum size confined effect (QSCE) theory.     

Absorption and emission of terahertz radiation in doped GaAs/AlGaAs quantum wells

Spontaneous emission of terahertz radiation from structures with GaAs/AlGaAs quantum wells in a longitudinal magnetic field has been studied. It is shown that some bands in the emission spectrum can be related to radiative electron transitions between resonant and localized impurity states, as well as to the transitions with participation of subband states. The temperature dependence of the equilibrium intraband absorption of terahertz radiation and its modulation in a longitudinal electric field in GaAs/AlGaAs quantum wells has been investigated.     

Effect of interdiffusion on nonlinear intraband light absorption in Gaussian-shaped double quantum rings

The effect of interdiffusion on electronic states and nonlinear light absorption in Gaussian-shaped double quantum rings is studied. The confining potential, electron energy spectrum, wave functions and absorption coefficient are obtained for different values of diffusion parameter. The effect of the variation of Gaussian parameters is considered as well. The selection rules for the intraband transitions in the cases of the light polarization parallel and perpendicular to the quantum rings' axis are obtained. It is shown that the interdiffusion can be used as an effective tool for the purposeful manipulation of the electric and optical properties of the considered structure.     

Control of the binding energy by tuning the single dopant position,magnetic field strength and shell thickness in ZnS/CdSe core/shell quantum dot

Recently, the new tunable optoelectronic devices associated to the inclusion of the single dopant are in continuous emergence. Combined to other effects such as magnetic field, geometrical confinement and dielectric discontinuity, it can constitute an approach to adjusting new transitions. In this paper, we present a theoretical investigation of magnetic field, donor position and quantum confinement effects on the ground state binding energy of single dopant confined in ZnS/CdSe core/shell quantum dot. Within the framework of the effective mass approximation, the Schrödinger equation was numerically been solved by using the Ritz variational method under the finite potential barrier. The results show that the binding energy is very affected by the core/shell sizes and by the external magnetic field. It has been shown that the single dopant energy transitions can be controlled by tuning the dopant position and/or the field strength.     

Parameter-dependent third-order optical nonlinearity in a CdSe/ZnS quantum dot quantum well in the vicinity of a gold nanoparticle

The nonlinear optical properties of the CdSe/ZnS quantum dot quantum well (QDQW) in the vicinity of a spherical metal nano-particle (MNP) have been described. The third-order nonlinear optical susceptibility induced by the transition between E₁ (inside the well) and E₂ (outside the well) has been calculated for the third-harmonic generation (THG) under the effective mass approximation and modified by the local field theory. The parameters-dependent third-order nonlinear optical susceptibility for the THG has been specifically explored and the influence of the distance between the QDQW and the MNP on the third-order susceptibility for the THG in the system has been shown and analyzed.     

CdSe/ZnS量子点在倏逝波光纤pH传感中的应用

将新型量子点荧光传感技术与光纤倏逝波传感技术相结合,发展了一种基于量子点荧光效应并结合倏逝波传导进行溶液酸碱度检测的新型传感技术,具有灵敏度高、检测速度快、便于微环境检测、可实现远程探测、实时监测和原位分析等特点。详细介绍了用于倏逝波传感的锥柱组合型光纤荧光探头的制备方法,量子点在光纤探头表面的修饰流程,光谱与强度两种光纤pH传感平台的建立,并分别从响应范围、线性度、重复性和稳定性等方面对CdSe/ZnS量子点应用于光纤pH传感进行了评价。结果表明,在pH值为2~12的范围内,CdSe/ZnS量子点的荧光光谱信号的峰位在强酸和强碱的情况下都会产生红移,且红移量随pH值的变化呈线性关系,其量子点荧光强度信号随pH值的减小呈线性降低关系,通过在强酸和强碱下交替测试的实验表明其具有较好的重复性,利用荧光强度传感平台进行实时监测的实验表明其具有较好的稳定性。因此,将CdSe/ZnS量子点用于倏逝波光纤pH传感具有可行性,在生物化学、环境监测、医学临床、食品安全等领域的pH值测量方面有着广泛的应用前景。     

CdSe/ZnSe/ZnS多壳层结构量子点的制备与表征

展示了一种简捷的多壳层量子点合成路线。在含有过量Se源的CdSe体系中直接注入Zn源,"一步法"合成了CdSe/ZnSe量子点;进一步以CdSe/ZnSe为"核",表面外延生长ZnS壳层制备了核/壳/壳结构CdSe/ZnSe/ZnS量子点。相对于以往报道的多壳层结构量子点的制备方法,该方法通过减少壳层的生长步骤有效地简化了实验操作,缩短了实验周期,同时减少对原料的损耗。对量子点进行高温退火处理,能够大幅提高CdSe/ZnSe/ZnS量子点的发光量子产率。透射电镜、XRD以及光谱研究表明:所制备的量子点接近球形,核与壳层纳米晶均为闪锌矿结构,最终获得的CdSe/ZnSe/ZnS量子点的光致发光量子产率达到53％。为了实现量子点的表面生物功能化,通过巯基酸进行了表面配体交换修饰,使量子点表面具有水溶性的羧基功能团,并且能够维持较高的光致发光量子产率。     

Characteristics of degenerated four wave mixing in ZnS/CdSe/ZnS quantum dot quantum well with multi-shell structure

The wave functions and eigenenergies of electrons in ZnS/CdSe/ZnS cylindrical quantum dot quantum well (QDQW) have been calculated by solving a three-dimensional nonlinear Schrödinger equation, in the framework of the effective-mass envelope-function theory. The third-order susceptibilities of the degenerated four waves mixing (DFWM) have been calculated theoretically by means of compact density matrix. The third-order susceptibilities as the function of the shell radius R₂, R₃ have been analyzed. The results show that the magnitude of nonlinear susceptibility is increased with the increasing of well radius. The resonance frequency of the photon have a shift when R₂ or R₃ is increasing and the relation between nonlinear susceptibility and relaxation time has also been studied.     

A quantum pseudodot system with a two-dimensional pseudoharmonic potential

We investigate the energy spectrum and the corresponding wave functions of an electron confined by a pseudoharmonic potential both including harmonic dot and antidot potentials in the presence of a strong magnetic field together with an Aharonov-Bohm flux field. Exact solutions for the energy levels and wave functions are found for this exactly soluble system. These are all tested under various conditions and also are compared with other works found in the literature. Further, we discuss the related energy spectrum in terms of special values of the proposed pseudoharmonic potential, AB field and magnetic field as a function of magnetic quantum number and magnetic field.     

Investigation of the radiative lifetime in core–shell CdSe/ZnS and CdSe/ZnSe quantum dots

Using the one band effective mass approximation model we computed the optical properties of the spherical shaped CdSe/ZnS and Cdse/ZnSe core–shell quantum dot (CSQD). For each structure we calculated the charge carrier energies and corresponding wave functions. We investigated the dependence of the carrier energies on various parameters of the CSQD, including its size. Then we calculated the radiative recombination lifetime for the two types of CSQDs nanocrystals. We found that as the size of the dot is increased the optical gap of CSQD is reduced, resulting in a reduction in electron energies and an increase in hole energies. We have shown that the radiative recombination lifetime in the CdSe/ZnS and CdSe/ZnSe CSQDs decreased by increasing the shell thickness around the core of the QD. We also showed that the radiative lifetime in the CdSe/ZnS is less than that in the CdSe/ZnSe CSQDs and is sensitive to the size and nature of shell of the semiconductor's material.     

Influence of lateral electric field on intraband optical absorption in concentric double quantum rings

The influence of lateral electric field on one-electron states and intraband absorption in two-dimensional concentric double quantum rings is investigated. The confining potential of the rings is modeled as a double harmonic central potential. Using the exact diagonalization technique, we calculate the dependence of the electron energy spectrum as a function of the electric field strength as well as the inner ring radius. Also, different values of confinement strength are considered. Selection rule is obtained for intraband transitions, caused by the direction of incident light polarization. The intraband absorption coefficient is calculated for different values of electric field strength, inner ring radius, confinement strength and incident light polarization direction. The combined influence of electric field strength and change of confining strength show that while the increment of the first one leads only to blueshift of absorption spectrum, the augment of the second one makes the redshift. In addition, both blueshift and redshift of the spectrum have been obtained with the enlargement of inner ring radius. Finally, we show that the absorption spectrum undergoes redshift by changing the polarization of incident light from x- to y-axis.     

Core-shell structure and quantum effect of CdSe/HgSe/CdSe quantum dot quantum well

Core-shell structure CdSe/HgSe/CdSe quantum dot quantum well (QDQW) nanocrystals were firstly synthesized and well controlled by colloidal chemical methods. High-resolution transmission electron microscope (HRTEM) photographs show that the CdSe core has a wurtzite crystal structure and the shell of HgSe has a hexagonal structure. The enhancement and blue shift of photoluminescence (PL) peak was observed which was attributed to the quantum confinement effect of carriers in the HgSe well.     

Control of spin state in CdSe quantum dots by coupling with magnetic semiconductor quantum dots

We studied spin states of CdSe quantum dots (QDs) coupled with CdMnSe QDs by probing circular polarization of photoluminescence spectrum under external magnetic fields. The bandgap energies of CdSe and CdMnSe QDs are close to each other and photoluminescence mainly originates from CdSe QDs due to relatively low radiation efficiency of CdMnSe QDs. The photoluminescence lifetime as well as its intensity was decreased with increasing magnetic field, which was ascribed to the increase in the ground state wavefunctions in CdMnSe QDs. The decrease was more pronounced for spin down electrons, which was explained by the difference in spin up and down wave functions under magnetic fields. Our results show that the spin state of CdSe QDs can be manipulated by coupling with CdMnSe QDs.     

Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field

The effects of a lateral electric field on intraband absorption in GaAs/GaAlAs two-dimensional coupled quantum dot-ring structure with an on-center hydrogenic donor impurity are investigated. The confining potential of the system consists of two parabolas with various confinement energies. The calculations are made using the exact diagonalization technique. A selection rule for intraband transitions was found for x-polarized incident light. The absorption spectrum mainly exhibits a redshift with the increment of electric field strength. On the other hand, the absorption spectrum can exhibit either a blue- or redshift depending on the values of confinement energies of dot and ring. Additionally, electric field changes the energetic shift direction influenced by the variation of barrier thickness of the structure.     

Atomistic tight-binding computations of the structural and optical properties of CdTe/CdX (X=S and Se)/ZnS core/shell/shell nanocrystals

A study of CdTe/CdX (X=S and Se)/ZnS core/shell/shell nanocrystals is carried out using atomistic tight-binding theory and the configuration interaction method to provide information for applications in bioimaging, biolabeling, display devices and near-infrared electronic instruments. The calculations yield the dependences of the internal and external passivated shells on the natural behaviours of CdTe/CdX (X=S and Se)/ZnS core/shell/shell nanocrystals. The reduction of the optical band gaps is observed with increasing numbers of monolayers in the external ZnS shell due to quantum confinement. Interestingly, the optical band gaps of CdTe/CdS/ZnS core/shell/shell nanocrystals are greater than those of CdTe/CdSe/ZnS core/shell/shell nanocrystals. In the presence of an external ZnS-coated shell, electron–hole wave function overlaps, oscillation strengths, ground-state exchange energies and Stokes shift are improved, whereas ground-state coulomb energies and fine-structure splitting are reduced. The oscillation strengths, Stokes shift and fine-structure splitting are reduced with the increase in external ZnS shell thickness. The oscillation strengths, Stokes shift and fine-structure splitting of CdTe/CdS/ZnS core/shell/shell nanocrystals are larger than those of CdTe/CdSe/ZnS core/shell/shell nanocrystals. Reduction of the atomistic electron–hole interactions is observed with increasing external ZnS shell size. The strong electron–hole interactions are more probed in CdTe/CdS/ZnS core/shell/shell nanocrystals than in CdTe/CdSe/ZnS core/shell/shell nanocrystals.     

Electroabsorption in a narrow gap semiconductor nanotube in the field of uniformly charged ring

The electronic states as well as interband and intraband electrooptical transitions are considered for the narrow gap InSb nanotube in the field of homogeneously charged ring. The problem is solved in the framework of the variational approach. The field of the charged ring is brought to the field of the modified one dimensional Coulomb-like potential. Physically appropriate wave functions are suggested for this potential and the intensities of the threshold frequencies of the electrooptical transitions are calculated.     

Electronic properties of A<Subscript>2</Subscript>B<Subscript>6</Subscript> quantum dots incorporated into Langmuir–Blodgett films

An experimental and theoretical study is performed for features of the electronic spectrum of CdSe/CdS/ZnS quantum dots incorporated into Langmuir–Blodgett films. Analysis of the investigated samples assesses the state of the first three levels of the electron spectrum for a quantum object. Good qualitative and quantitative agreement is achieved between the experimental results and theoretical estimates. It is shown that the mechanism of the observed field emission current through a quantum dot is described satisfactorily by the Morgulis–Stratton theory under the considered experimental conditions.     

CdSe/HgSe/CdSe量子点量子阱(QDQW)晶粒的光学性质和电子结构

以CdSe纳米晶体为核,用胶体化学的方法,通过化学替代反应,获得了不同阱层或不同垒层的CdSeHgSeCdSe量子点量子阱(QDQW)晶体.紫外可见光吸收谱研究表明,通过调节QDQW中间HgSe阱层的厚度从0.9nm至0,可以调节QDQW颗粒的带隙从1.8变化至2.1eV,实现QDQW纳米晶体的剪裁.光致荧光(PL)谱研究显示,QDQW形成后,CdSeHgSe纳米颗粒表面态得到钝化,显现出发光强度加强的带边荧光峰.利用有效质量近似模型,对QDQW晶粒内部电子的1s—1s态进行了估算,估算结果总体趋势与实验数据相符 关键词： 量子点量子阱晶体 能带剪裁 加强的带边荧光峰     

Photoluminescence of tetrahedral quantum-dot quantum wells

Taking into account the tetrahedral shape of a quantum-dot quantum well (QDQW) when describing excitonic states, phonon modes, and the exciton-phonon interaction in the structure, we obtain within a nonadiabatic approach a quantitative interpretation of the photoluminescence spectrum of a single CdS/HgS/CdS QDQW. We find that the exciton ground state in a tetrahedral QDQW is bright, in contrast to the dark ground state for a spherical QDQW. The position of the phonon peaks in the photoluminescence spectrum is attributed to interface optical phonons. We also show that the experimental value of the Huang-Rhys parameter can be obtained only within the nonadiabatic theory of phonon-assisted transitions.