Relativistic R-matrix close-coupling calculations for photoionization of Ne-like Al IV

We present relativistic close-coupling photoionization calculations of Al IV using the Breit-Pauli R-matrix method to obtain photoionization cross-section of Al IV from the ground state and the lowest two J=0 (even) excited states. A multi-configuration eigenfunctions expansion of the core Al V is employed with spectroscopic configurations 2s²2p⁵, 2s2p⁶, 2s²2p⁴3s, 2s²2p⁴3p, 2s²2p⁴3d and 2s²2p⁴4s. We have included, for the first time, the lowest 68 level target states of Al V in the photoionization calculations of Al IV. Extensive configuration interaction wavefunctions are used to describe both the initial Al IV states and the final Al V states. Cross-sections are compared from three level calculations including only 2s² 2p^{5 2}P^o _3/2, _1/2 and 2s 2p^{6 2}S_1/2 levels of Al V. The present calculation using the lowest 68 target levels of Al V are presented for the first time and should provide reasonably complete database for practical application for photoionization cross-section for Al IV, where high-energy cross-sections along with near-threshold photoionization cross-section is required.     

Relativistic quantum mechanic calculation of photoionization cross-section of hydrogenic and non-hydrogenic states using analytical potentials

Photoionization process is a subject of special importance in many areas of physics. Numerical methods must be used in order to obtain photoionization cross-sections for non-hydrogenic levels. The atomic data required to calculate them is huge so self-consistent calculations increase computing time considerably. Analytical potentials are a useful alternative because they avoid the iterative procedures typical in self-consistent models. In this work, we present a relativistic quantum calculation of photoionization cross-sections for isolated ions based on an analytical potential to obtain the required atomic data, which is valid both for hydrogenic and non-hydrogenic ions. Comparisons between our results and others obtained using either widely used analytical expressions for the cross-sections or more sophisticated calculations are done.     

C原子、离子光电离过程的规律研究

 基于Dirac-Slater自洽场方法,计算了C原子及各价离子从低能到高能的光电离截面。通过各种理论计算结果的比较,分析了Kramers公式的适用性。定量地考察了多极效应和相对论效应在不同能区对光电离截面的影响,并研究了光电离截面随光子能量、壳层、电离度变化的规律。     

R-matrix method for Heisenberg quantum groups

TheR-matrix method is systematically applied to get several Heisenberg quantum groups depending on two or three parameters. It turns out that the associatedR-matrices have to verify a weaker form of the QYBE. Only for particular cases of quantum groups, we can imposeR to be a solution of the QYBE. The corresponding quantum Heisenberg Lie algebras are obtained by duality.     

真实体系光电离截面共振结构的理论研究

利用我们提出的普遍适用的精确光电离截面公式和介电影响函数研究了原子光电离共振结构受粒子数密度影响的效应.结果表明用新的光电离截面公式可以直接处理宏观环境对截面的影响,明显地优于孤立原子光电离截面公式.     

The uniqueness theorem for the universal R-matrix

Up to now, the universal R-matrix for quantized Kac-Moody algebras is believed to be uniquely determined (for some ansatz) by properties of a quasi-cocommutativity and a quasi-triangularity. We prove here that the universal R-matrix (for the same ansatz) is uniquely determined by the property of the quasi-cocommutativity only. Thus, the quasi-triangular property (and the Yang-Baxter equation!) for the universal R-matrix is a consequence of the linear equation of the quasi-cocommutativity. The proof is based on properties of singular vectors in the tensor product of the Verma modules and the structure of extremal projector for quantized algebras. Explicit expressions of the universal R-matrix for quantized algebras U _q (A _inf1 ^sup(1) ) and U _q (A _inf2 ^sup(2) ) are given.

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原子核对光电离截面的影响

利用Dirac-Slater相对论平均自洽场理论,研究了不同原子体系光电离截面在不同核模型下的差异.考虑原子核大小时,核的尺寸效应使电子所感受到的有效核电荷减小,并进而影响到电子的概率分布及光电离截面等;对没有考虑原子核大小的点模型,由于不存在核的尺寸效应,出射光电子的波函数有较大相移,从而有可能出现Cooper极小.当入射光子的能量远大于相关电子的电离能时,不同核模型下电子束缚能及平均半径等的差异将相对减小,从而使光电离截面随入射光子能量的变化趋于一致.     

钴、钛原子激发态光电离研究

本文报道紫外区钛和钴原子共振增强多光子电离(REMPI)谱和激发态绝对光电离截面。实验上通过激光烧蚀金属样品制备中性原子,由飞行时间质谱仪检测离子产物,在298-351nm范围扫描激光波长,得到钛原子和钴原子共振增强多光子电离谱;并根据共振离子信号强度与电离激光通量关系得到原子激发态的绝对光电离截面,这些激发态电离截面的实验值在0.5-4 Mb。     

钴、钛原子激发态光电离研究

本文报道紫外区钛和钴原子共振增强多光子电离(REMPI)谱和激发态绝对光电离截面。实验上通过激光烧蚀金属样品制备中性原子,由飞行时间质谱仪检测离子产物,在298-351nm范围扫描激光波长,得到钛原子和钴原子共振增强多光子电离谱;并根据共振离子信号强度与电离激光通量关系得到原子激发态的绝对光电离截面,这些激发态电离截面的实验值在0.5-4 Mb。     

Al原子K壳层光电离的理论研究

基于多组态Dirac-Fock理论方法及其相应的GRASP2K和修改后的RATIP2012程序包,计算了极化光子入射Al原子K壳层光电离截面,并利用最新发展的RPI-E计算程序研究了K壳层光电子角分布,重点讨论了辐射场的非偶极项对光电离截面和光电子角分布的影响.结果表明,在入射光子5000 e V能量范围内,辐射场的非偶极效应对光电离总截面的影响可以忽略不计.随着入射光子能量的增加,辐射场的非偶极效应对光电子角分布的影响越来越大,入射光子能量在5000 eV,一级非偶极参数γ的数值达到1.5.     

The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of impurities in quantum-well wires

Using a variational approach, we have calculated the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum-well wires under different temperature and hydrostatic pressure conditions. Our calculation have revealed the dependence of the photoionization cross-section and the impurity binding on temperature and hydrostatic pressure.     

Electron angular distributions in double photoionization: Use of effective Sommerfeld parameters

We present calculations of the fivefold differential cross-section (FDCS) for double photoionization of helium at excess energies of 6 and 20 eV above threshold. Our results are obtained using for the final double-continuum state a product of three Coulomb wave functions, with the Sommerfeld parameters modified to describe the strength of interaction of any two particles affected by the third particle. Our calculations are compared with recent absolute measurements by D?rner et al. (Phys. Rev. A 57, 1074 (1998)), both in coplanar and non-coplanar geometries. Very good agreement is obtained for the shape of the angular distributions, and differences in the absolute magnitude exist in comparison with the standard choice of Sommerfeld parameters. Received: 17 July 1998 / Received in final form and Accepted: 23 October 1998     

Donor impurity-related photoionization cross-section in parabolic quantum wires: Effects of intense laser field and applied electric field

Within the effective mass approximation, the effects of the electric and intense laser fields on the binding energy and the photoionization cross-section of shallow-donor impurities in GaAs/GaAlAs parabolic quantum wires are investigated theoretically by using a variational method. The numerical results show that the electric and intense laser fields lead to significant changes in the binding energy and photoionization cross-section.     

Asymptotic form of the high energy photoionization cross section of fullerenes

We show that the theoretical predictions on high energy behavior of the photoionization cross section of fullerenes depend crucially on the form of the function $V(r)$ which approximates the fullerene field. The shape of the high energy cross section is obtained without solving the wave equation. The cross section energy dependence is determined by the analytical properties of the function $V(r)$.     

Total photoionization cross-sections of Ar and Xe in the energy range of 2.1–6.0 keV

Total photoionization cross-sections of Ar and Xe have been accurately measured in the photon energy region of 2.1–6.0 keV, using a four-electrode ion chamber with monochromatized synchrotron radiation. Experimental data are presented in both graphical and tabular forms and compared with previous data reported in the literatures.     

Dielectric mismatch effect on the photoionization cross section and intersublevel transitions in GaAs nanodots

A theoretical study of the electronic states in a spherical quantum dot with and without a hydrogenic impurity is performed within the effective mass approximation taking into account the dielectric mismatch effect. By considering the joint action of the quantum confinement and polarization charges, the photoionization cross section for an on-center donor and intersublevel optical absorption are investigated. We found that: i) the subband energies increase while the 1s and 2p impurity levels decrease when the dielectric mismatch between the dot and its environment enhances; ii) the dielectric mismatch has a significant effect on the peak position and magnitude of the photoionization cross section so that the behavior of this quantity can indicate the material in contact with the nanostructure; iii) the absorption spectrum is less sensitive to the environment dielectric properties but it significantly depends on the dot radius as well as on the impurity presence. The possibility of tuning the resonant energies by using the combined effect of the quantum confinement and dielectric mismatch between the dot and the surrounding medium can be useful in designing new optoelectronic devices.     

Ingoing and outgoing waves in the non-relativistic theory of photoionization

A well-known formula for the differential cross section for photoionization contains a so-called ‘final state’ wave function which asymptotically behaves as a Coulomb-modified plane wave plus an ingoing Coulomb-modified radial wave. We explain the reason of appearance of that function on the ground of an analysis of an asymptotic form of a relevant outgoing Green's function. The reasoning is carried out without referring to an intuitive argumentation of Breit and Bethe [Phys. Rev. 93 (1954) 888].     

光电离-离子迁移谱快速监测一次性医疗器械中的环己酮

聚氯乙烯制成的一次性医疗器械在生产加工过程中,常使用环己酮作为部件粘结剂。由于残留的环己酮可释放到医疗器械管道和储存的溶液中,并可能对病人产生一定的副作用,因此,医疗器械中环己酮的快速检测日显重要。利用自主研制的紫外光电离-离子迁移谱装置对环己酮进行检测,检测限为15ppb,检测线性动态范围达到三个数量级。分别对三个品牌一次性输液器包装中的气体进行迁移谱测量,获得包装内环己酮的平均浓度分别为16.78,17.59和46.69ppm。该方法可以用于一次性医疗器械中环己酮等有机溶剂的快速检测,进行医疗器械产品的质量监控。     

Rare earth photoionization study by the resonant microwave cavity technique

Photoconductivity spectra of rare earth-doped insulating materials are measured using the resonant microwave cavity method. This technique is based on the detection of the cavity Q-factor changes induced by irradiation of the sample (inserted in the cavity) by a pulsed tunable laser. Results obtained with Lu₂(SiO₄)O:Ce³⁺ and BaF₂:Eu²⁺ are presented and discussed. Photoionization thresholds at 400 nm (3.1 eV) and 310 nm (4.0 eV) are measured for Lu₂(SiO₄)O:Ce³⁺ and BaF₂:Eu²⁺, respectively.