A passively Q-switched Yb:YAG microchip laser

We present a diode-pumped passively Q-switched Yb:YAG microchip laser, using a semiconductor saturable absorber mirror. We obtained pulses with 1.1-μJ energy, 530-ps duration, 1.9-kW peak power, and a repetition rate of 12 kHz. The laser is oscillating in a single longitudinal mode. Received: 23 October 2000 / Published online: 7 February 2001     

Sub-nanosecond passively Q-switched Yb:YAG/Cr4+:YAG sandwiched microchip laser

We report on laser-diode pumped low-threshold, and compact passively Q-switched Yb:YAG microchip lasers, with Cr⁴⁺:YAG crystals as the saturable absorbers. The laser threshold at the fundamental wavelength of 1.03 μm is as low as 0.25 W, and the slope efficiency is as high as 36.8%, and the optical-to-optical efficiency is as high as 27% for the 95% initial transmission of the Cr⁴⁺:YAG crystal. A pulse width of 1.35 ns and peak power of over 8.2 kW was obtained. Using a 5 mm thick KTP crystal as the second-harmonic generation medium, 514.7 nm green light of 155 mW power was generated. The pulse duration of 480 ps was generated at 1.03 μm by using 85% of the initial transmission of the Cr⁴⁺:YAG saturable absorber. Stable single-longitudinal-mode oscillation and wide-separated multi-longitudinal-mode oscillation due to the etalon effect of the Cr⁴⁺:YAG thin plate was achieved at different pump power levels. PACS 42.55.Sa; 42.55.Xi; 42.60.Gd     

LD side-pumped passively Q-switched Yb:YAG slab laser

A quasi-continuous wave laser diode side-pumped passively Q-switched Yb:YAG slab laser with Cr⁴⁺:YAG saturable absorber has been demonstrated in order to understand the pulse properties of Yb:YAG crystal. To our knowledge the maximum 69% extraction efficiency is achieved by the system. 44 μJ pulse energy and 1.64 KW peak power with near diffraction-limited beam quality are presented at 25 Hz repetition rate. The build-up time of the Q-giant in the passively Q-switched laser is shown.     

Diode-pumped passively Q-switched YAG/Yb:YAG laser with Cr4+:YAG as a saturable absorber

We design an efficient passively Q-switched laser using a composite YAG/Yb:YAG crystal as the laser gain medium and a Cr⁴⁺:YAG crystal as a saturable absorber. We obtain an average output power of 1.81 W in 1030 nm laser at an absorbed pump power of 4.8 W, corresponding to an optical-to-optical efficiency of 37.7% and a slope efficiency of 47.3%. The pulsed laser has a repetition rate of about 28.6 kHz and a pulse width of 15.8 ns, with the highest peak power of 4 kW. In addition, using a LBO as the intracavity frequency doubler, we obtain a maximum power of 246 mW in 515 nm pulsed laser at an absorbed pump power of 3.8 W.     

A passively Q-switched diode pumped Yb:YAG microchip laser

A passively Q-switched diode pumped Yb:YAG microchip laser with Cr4+:YAG saturable absorber mirror is reported. The TEMoo laser pulses are obtained with 1,7-uJ pulse energy, 15-ns pulse width, 0.11-kW peak power, and a repetition rate of 2.2 kHz at 1049 nm. The doped concentration and dimension of Yb:YAG microchip crystal are 10 at.-% and 5×0.6 mm2, respectively.     

End-pumped, passively Q-switched Yb:YAG double-clad waveguide laser

We present a diode-pumped, double-clad Yb:YAG waveguide laser that contains an integrated section of a Cr(4+): YAG saturable absorber for passive Q switching. Using two 4-W polarization-coupled, broad-striped diode-pumped lasers, we obtained 30-microJ pulses of 1.6-ns duration at repetition rates of as much as 77 kHz. The slope efficiency was ~50% with respect to absorbed pump power, with a maximum output average power of 2.3 W and a peak power of ~18 kW . The output beam was single lobed, with M(2) values as great as 1.5x1.3 . We also demonstrate a passively Q -switched Nd:YAG waveguide laser of similar design, operating at 1.064 microm and 946 nm.     

A thermally-insensitive passively Q-switched Cr:YAG/Nd:YAG laser

A passively Q-switched laser with Cr⁴⁺:YAG/Nd:YAG composite crystal using a corner cube prism cavity has been realized, in which the corner cube prism is the key element as it aids the compensation of the thermal lens effect of laser crystal. Compared with plane–plane mirror cavities under the same conditions, the stability of the laser performance using the corner cube prism cavity was improved remarkably over temperatures ranging from −40 to 65 °C. The decrease of Nd:YAG stimulated emission cross section with temperature was considered to be the main reason for the increase of average output pulse energy under the same cycle for the two different cavities when the ambient temperature changed −40 to 65 °C. The mode properties produced by the prism cavity were analyzed, and the theoretical results were verified by experimental observations.     

Pre-pumped passively Q-switched Nd:YAG/Cr:YAG microchip laser

A pre-pumped passively Q-switched Nd:YAG/Cr:YAG microchip laser is demonstrated with a peak power of 7.5 kW at pulse repetition rate of serveral kilohertzs. The full-width at half-maximum(FWHM)is 734 ps, and the pulse energy is 5.5 μJ with a fundamental spatial mode. In this system, the pre-pumped microchip laser of Nd:YAG/Cr:YAG wafer which is bonded through the thermal-bonding technique has achieved a time jitter value of 12 μs and a Q-switched amplitude instability of 1.26％(15)through the pre-pumped modulation technique.     

High-temperature operation of a diode-pumped passively Q-switched Nd:YAG/Cr4+:YAG laser

The output performances of a diode-pumped Nd:YAG laser passively Q-switched by Cr⁴⁺:YAG saturable absorber crystal were investigated function of temperature. Increase of the temperature from 25 to 150°C increased slightly the laser pulse energy, and did not change the pulse duration. Furthermore, an increased absorbed energy of the pump radiation was necessary at temperatures higher than 25°C in order to maintain Q-switch operation. Measurements concluded that Cr⁴⁺:YAG transmission did not vary when temperature increased to 150°C. The decrease of Nd:YAG emission cross section with temperature and the changes of resonator configuration due to thermal effects were considered as main reasons for this behavior. The results of this work are valuable for designing a laser-ignition system for industrial gas engine or automotive industry.     

LBO intracavity frequency doubled, Cr:YAG passively Q-switched Nd:YAG green laser

A LD-pumped, LBO intracavity frequency doubled and Cr:YAG passively Q-switched Nd:YAG green laser was reported in this letter. With 600 mW incident pump laser, Q-switched green laser with average power of 27 mW, pulse width of 15.2 ns, repetition rate of 16.4 kHz and peak power of 108.1 W was obtained.     

Efficient diode-pumped passively Q-switched laser with Nd:YAG/Cr:YAG composite crystal

Diffusion bonded Nd:YAG/Cr:YAG composite laser crystal has been employed to perform a compact diode-pumped passively Q-switched laser. At the incident pump power of 3.3 W and pulse repetition rate of 16.3 kHz, the maximum average output of 592 mW has been obtained, corresponding to an optical-to-optical conversion efficiency of 18%. Stable passively Q-switched operation with peak power of 6.5 kW and pulse duration of 6 ns was also achieved. It has been experimentally revealed that Nd:host/Cr:YAG composite structure is a promising material for compact cost-effective Q-switched laser sources with high-peak power and short pulse duration. In addition, thermal lens effect (TLE) in the active medium and its impact on the Q-switched laser performance have been analyzed.     

Efficient passively Q-switched Yb:LuAG microchip laser

An efficient passively Q-switched Yb:LuAG microchip laser with Cr4+:YAG as saturable absorber was demonstrated for the first time to our knowledge. Slope efficiencies of 40% and 28% were measured for the initial transmission of Cr4+:YAG, T(0)=95% and 90%, respectively. Laser pulses with a pulse energy of 19 microJ and a pulse width of 610 ps at the repetition rate of 12.8 kHz were achieved for T(0)=90%; the corresponding peak power of over 31 kW was obtained. The lasers oscillated at two or three longitudinal modes owing to the broad emission spectra of Yb:LuAG and mode selection by Cr4+:YAG thin plate acting as an intracavity etalon.     

Optimization of passively Q-switched and mode-locked laser with Cr:YAG saturable absorber

By considering the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density, the coupled rate equations for a diode-pumped passively Q-switched and mode-locked (QML) laser with Cr⁴⁺:YAG saturable absorber are given. These coupled rate equations are solved numerically and the key parameters of an optimally coupled passively QML laser are determined for the first time. These key parameters include the parameters of the gain medium, the saturable absorber and the resonator, which can maximize the pulse energy of singly Q-switched envelope. The optimal calculations for a diode-pumped passively QML Nd:GdVO₄ laser with Cr⁴⁺:YAG saturable absorber are presented to demonstrate the numerical simulation applicable.     

Graphene passively Q-switched Ho:YAG ceramic laser

We report on the first graphene passively Q-switched Ho:YAG ceramic laser with central wavelength of 2,097 nm. Stable pulses of 28–64 kHz repetition rate and 2.6–9 μs pulse widths were generated under 1,907 nm thulium fiber laser pumping. Maximum average power of 264 mW with 9.3 μJ pulse energy was obtained under 3.27 W of pump power.     

Diode end-pumped passively Q-switched Nd:YAG ceramic laser with Cr4+:YAG saturable absorber

We report on a diode end-pumped passively Q-switched Nd:YAG ceramic laser. By using a Cr⁴⁺:YAG single crystal with an 80% initial transmission as the saturable absorber, stable Q-switched pulses with a 126-μJ pulse energy, a 12-ns pulse width, and an 8.4-kHz pulse repetition rate have been obtained. The Q-switching performance of the laser under different saturable absorption strengths and output couplings was experimentally investigated.     

Thermal mode-switching of a passively Q-switched microchip Nd:YAG laser

In the present article, the thermal distribution inside the gain medium of a passively Q-switched microchip laser is modeled and simulated for actual practical values associated with an available microchip laser constructed in our laboratory. The effects of the non-uniform heat distribution on the spectral properties of the output laser beam have been investigated and simulated with the variation of diode-pump power and pulse repetition rate. It is observed that the gain bandwidth as well as Optical Path Difference (OPD) values of the propagating pulses are significantly decreased, while the Nd:YAG chip is cooled down to a certain value. The validity of the utilized model is checked by setting and characterizing the spectral properties of a fabricated laboratory microchip laser under different heating conditions. It is verified that when the temperature of the gain material is changed by an electronically controlled Peltier device, the spectrum of the output laser beam can be switched between single- and dual-mode situations. This physical character has shown good agreement between the presented model and obtained experimental results.     

Efficient passively Q-switched operation of a diode-pumped Nd:GGG laser with a Cr:YAG saturable absorber

The continuous-wave (cw) and passive Q-switching operation of a diode-end-pumped gadolinium gallium garnet doped with neodymium (Nd:GGG) laser at 1062 nm was realized. A maximum cw output power of 6.9 W was obtained. The corresponding optical conversion efficiency was 50.9%, and the slope efficiency was determined to be 51.4%. By using Cr⁴⁺:YAG crystals as saturable absorbers, Q-switching pulse with average output power of 1.28 W, pulse width of 4 ns and repetition rate of 6.2 kHz were obtained. The single-pulse energy and peak power were estimated to be 206 μJ and 51.6 kW, respectively. The conversion efficiency of the output power from cw to Q-switching operation was as high as 84.7%.     

Graphene-based passively Q-switched diode-side-pumped Nd:YAG solid laser

In this paper, a desirably simple, convenient and inexpensive saturable absorber mirror has been fabricated based on graphene, which has no wavelength selectivity. Moreover, there are no changes in the structure and characteristics of graphene. By inserting the graphene-PMMA SA mirror to the Nd: YAG laser, the shortest pulse width of 260 ns can be obtained with the single-pulse energy of about 8.32 μJ. The experimental results prove that our graphene-PMMA SA mirror is feasible and suitable for Q-switched lasers.     

Single-mode high-peak-power passively Q-switched diode-pumped Nd:YAG laser

We have demonstrated an efficient, compact, passively Q-switched single-mode diode-pumped Nd:YAG laser that uses Cr(4+):YAG as a saturable absorber. Linear- and ring-cavity configurations were demonstrated. Pulse energies and widths were, respectively, 1.5mJ and 3.9ns for the linear cavity and 2.1mJ and 12ns for the ring cavity.