Surface properties of palladium catalysts supported on ternary ZrO2–Al2O3–WOx oxides prepared by the sol–gel method: Study of the chemical state of the support

The surface properties of Pd and Pd–Pt catalysts supported on binary ZrO₂–WOx and ternary ZrO₂–Al₂O₃–WOx oxides prepared by the sol–gel method were studied. Special attention was paid to the study of the texture of the catalysts as well as the chemical state of tungstated zirconia and tungstated zirconia promoted with alumina in the palladium catalysts. The catalysts were tested in the isomerization of n-hexane and were characterized by N₂ physisorption, XRD, TPR, Raman spectroscopy, XPS and FT-IR of adsorbed pyridine. The catalysts had bimodal pore size distributions with mesopores in the range 55–70 Å and macropores of 1000 Å in diameter. The catalysts had a surface WOx coverage (4.4–6.0 W nm^?2) lower than that of the theoretical monolayer (7.0 W nm^?2). A lower acidity of the ternary ZrO₂–Al₂O₃–WOx oxide as compared to the binary ZrO₂–WOx oxide was found. Higher activity in the isomerisation of n-hexane was obtained in the Pd–Pt catalysts supported on ternary ZrAlW oxides prepared by sol–gel that is correlated with the coexistence on the surface of W⁴⁺ (WO₂) or W⁰ and W⁶⁺ (Al₂(WO₄)₃) species, ZrO₂ in the tetragonal phase and a high amount of ZrOx suboxides species in a low oxidation state (Zr³⁺ and Zr²⁺).     

Reduction of thin-film ceria on Pt(111) by supported Pd nanoparticles probed with resonant photoemission

Local defects present in CeO_2 ? x films result in a mixture of Ce³⁺ and Ce⁴⁺ oxidation states. Previous studies of the Ce 3d region with XPS have shown that depositing metal nanoparticles on ceria films causes further reduction, with an increase in Ce³⁺ concentration. Here, we compare the use of XPS and resonant photoemission spectroscopy (RESPES) to estimate the concentration of Ce³⁺ and Ce⁴⁺ in CeO_2 ? x films grown on Pt (111), and the variation of this concentration as a function of Pd deposition. Due to the nature of the electronic structure of CeO_2 ? x, resonant peaks are observed for the 4d–4f transitions when the photon energy matches the resonant energy; (hν = 121.0 eV) for Ce³⁺ and (hν = 124.5 eV) for Ce⁴⁺. This results in two discrete resonant photoemission peaks in valence band spectra. The ratio of the difference of these peaks with off-resonance scans gives an indication of the relative contribution of Ce³⁺. Results from RESPES indicate reduction of CeO_2 ? x on deposition of Pd, confirming earlier findings from XPS studies.     

A potential red-emitting phosphor with high color-purity for near-UV light emitting diodes

New red tungstates phosphors, Na₅La_1?xLn_x(WO₄)₄ (Ln = Eu, Sm) and Na₅Eu_1?xSm_x(WO₄)₄, were prepared by solid-state reaction technique. And their structure and photo-luminescent properties were investigated. The introduction of Sm³⁺ broadened the excitation band around 400 nm of the phosphors, and strengthened the red emission. And the possible energy transfer process from Sm³⁺ to Eu³⁺ is discussed. The single red LED was fabricated by combining InGaN chip with Na₅Eu_0.94Sm_0.06(WO₄)₄ as red phosphor, intense red light can be observed by naked eyes. Then the phosphor Na₅Eu_0.94Sm_0.06(WO₄)₄ may be a good candidate for red component of near-UV InGaN-based W-LEDs, because of efficient red-emitting with broadened absorption around 400 nm and appropriate CIE chromaticity coordinates (x = 0.65, y = 0.34).     

Proton diffusion in the superprotonic phase of [(NH4)1 − xRbx]3H(SO4)2 as studied by 1H spin-lattice relaxation

Proton diffusion in [(NH₄)_1 ? xRb_x]₃H(SO₄)₂ (0 < x < 1) has been studied by means of ¹H spin-lattice relaxation times, T₁. The relaxation times were measured at 200.13 MHz in the range of 296–490 K and at 19.65 MHz in the range of 300–470 K. In the high-temperature phase (phase I), translational diffusion of the acidic protons relaxes both the acidic protons and the ammonium protons. Spin diffusion averages the relaxation rate of the two kinds of protons, whereas proton exchange between them are slow. The spin-lattice relaxation times in phase I were analyzed theoretically, and parameters of proton diffusion were obtained. The mean residence time of the acidic protons increases with increase in x for [(NH₄)_1 ? xRb_x]₃H(SO₄)₂ (0 ≤ x ≤ 0.54). Rb₃H(SO₄)₂ does not obey this trend. The results of NMR well explain the macroscopic proton conductivity.     

Thermal,dielectric and conductivity studies on PVA/Ionic liquid [EMIM][EtSO4] based polymer electrolytes

Polymer electrolyte films of (PVA+15 wt% LiClO₄)+x wt% Ionic liquid (IL) 1-ethyl-3-methylimidazolium ethylsulfate [EMIM][EtSO₄] (x=0, 5, 10, 15) were prepared by solution cast technique. These films were characterized using TGA, DSC, XRD and ac impedance spectroscopic techniques. XRD result shows that amorphosity increases as the amount of the IL in PVA+salt (LiClO₄) is increased. DSC results confirm the same (except (PVA+15 wt% LiClO₄)+10 wt% IL). The dielectric and conductivity measurements were carried out on these films as a function of frequency and temperature. The addition of IL significantly improved the ionic conductivity of polymer electrolytes. Relaxation frequency vs. temperature plot for (PVA+15 wt% LiClO₄)+x wt% IL were found to follow an Arrhenius nature. The dielectric behavior was analyzed using real and imaginary parts of dielectric constant, dielectric loss tangent (tan δ) and electric modulus (M′ and M″).     

The effect of copper concentration on structural,optical and dielectric properties of CuxZn1 − xS thin films

Cu_xZn_1 ? xS (x = 0, 0.25, 0.50, 0.75, 1) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The copper concentration (x) effect on the structural, morphological and optical properties of Cu_xZn_1 ? xS thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing copper concentration. The energy bandgap values were changed from 2.07 to 3.67 eV depending on the copper concentration. The refractive index (n), optical static and high frequency dielectric constants (ε_o, ε_∞) values were calculated by using the energy bandgap values as a function of the copper concentration.     

Effective utilization of spray pyrolyzed CeO2 as optically passive counter electrode for enhancing optical modulation of WO3

Nanocrystalline cerium oxide (CeO₂) thin films were deposited onto the fluorine doped tin oxide coated glass substrates using methanolic solution of cerium nitrate hexahydrate precursor by a simple spray pyrolysis technique. Thermal analysis of the precursor salt showed the onset of crystallization of CeO₂ at 300 °C. Therefore, cerium dioxide thin films were prepared at different deposition temperatures from 300 to 450 °C. Films were transparent (T ~ 80%), polycrystalline with cubic fluorite crystal structure and having band gap energy (Eg) in the range of 3.04–3.6 eV. The different morphological features of the film obtained at various deposition temperatures had pronounced effect on the ion storage capacity (ISC) and electrochemical stability. The larger film thickness coupled with adequate degree of porosity of CeO₂ films prepared at 400 °C showed higher ion storage capacity of 20.6 mC cm^? 2 in 0.5 M LiClO₄ + PC electrolyte. Such films were also electrochemically more stable than the other studied samples. The Ce⁴⁺/Ce³⁺ intervalancy charge transfer mechanism during the bleaching–lithiation of CeO₂ film was directly evidenced from X-ray photoelectron spectroscopy. The optically passive behavior of the CeO₂ film (prepared at 400 °C) is affirmed by its negligible transmission modulation upon Li⁺ ion insertion/extraction, irrespective of the extent of Li⁺ ion intercalation. The coloration efficiency of spray deposited tungsten oxide (WO₃) thin film is found to enhance from 47 to 53 cm² C^? 1 when CeO₂ is coupled with WO₃ as a counter electrode in electrochromic device. Hence, CeO₂ can be a good candidate for optically passive counter electrode as an ion storage layer.     

Electrical properties of yttrium doped strontium titanate with A-site deficiency as potential anode materials for solid oxide fuel cells

Yttrium doped strontium titanate with A-site deficiency ((Y_0.08Sr_0.92)_1 ? xTiO_3 ? δ) was synthesized by conventional solid state reaction. The deficiency limit of A-site in (Y_0.08Sr_0.92)_1 ? xTiO_3 ? δ is below 6 mol% in Ar/H₂ (5%) at 1500 °C. The sinterability of (Y_0.08Sr_0.92)_1 ? xTiO_3 ? δ samples decreases slightly with increasing A-site deficiency level (x). The ionic conductivity of (Y_0.08Sr_0.92)_1 ? xTiO_3 ? δ samples increases while the electronic conductivity decreases with increasing A-site deficient amount. The defect chemistry analysis indicates that the introduction of A-site deficiency results in not only the increase of oxygen vacancy concentration but also the decrease of Ti³⁺-ion concentration. The latter plays the main role in the electrical conduction. (Y_0.08Sr_0.92)_1 ? xTiO_3 ? δ shows good thermal-cyclic performance in electrical conductivity and has an excellent chemical compatibility with YSZ electrolyte below 1500 °C.     

An oxygen permeable membrane La0.8Sr0.2(Ga0.8Mg0.2)1 − xCrxO3 − δ for a reduced atmosphere

Mixed electron hole and oxide ion conducting perovskite-type oxides, La_0.8Sr_0.2(Ga_0.8Mg_0.2)_1 ? xCr_xO_3 ? δ (0 ≤ x ≤ 1.0)_, were prepared by solid state reaction. The phase stability and the oxygen permeation properties of the oxides were examined as a function of the content of Cr. La_0.8Sr_0.2(Ga_0.8Mg_0.2)_1 ? xCr_xO_3 ? δ has a perovskite related tetragonal phase with x = 0.1 to 0.8. The total electrical conductivity of La_0.8Sr_0.2(Ga_0.8Mg_0.2)_1 ? xCr_xO_3 ? δ increases with increasing x. The oxygen permeation flux across the La_0.8Sr_0.2(Ga_0.8Mg_0.2)_1 ? xCr_xO_3 ? δ membranes at higher temperatures increases with x up to x = 04. The maximum oxygen permeation flux of 1.6 × 10^? 7 mol^? 1 cm^? 2 at 1100 °C in a oxygen activity gradient of air/10^? 2 Pa is observed in La_0.8Sr_0.2(Ga_0.8Mg_0.2)_0.6Cr_0.4O_3 ? δ. This perovskite-type oxide is stable under an oxygen partial pressure of 7 × 10^? 10 Pa at 1000 °C.     

Thin films of molecule-based charge transfer complex cobalt tetracyanoethylene: In situ X-ray photoemission study

Thin films of molecule-based charge transfer magnet, cobalt tetracyanoethylene [Co(TCNE)_x, x ~ 2] consisting of the transition metal Co, and an organic molecule viz. tetracyanoethylene (TCNE) have been deposited by using physical vapor deposition method under ultra-high vacuum conditions at room temperature. X-ray photoelectron spectroscopy (XPS) technique has been used extensively to investigate the electronic properties of the Co(TCNE)_x thin films. The XPS measurements show that the prepared Co(TCNE)_x films are clean, and oxygen free. The stoichiometries of the films, based on atomic sensitive factors, are obtained, and yields a ~ 1:2 ratio between metal Co and TCNE for all films. Interestingly, the positive shift of binding energy position for Co(2p), and negative shifts for C(1s) and N(1s) peaks suggest a charge-transfer from Co to TCNE, and cobalt is assigned to its Co(II) valence state. In the valence band investigation, the highest occupied molecular orbital (HOMO) of Co(TCNE)_x is found to be at ~ 2.4 eV with respect to the Fermi level, and it is derived either from the TCNE^? singly occupied molecular orbital (SOMO) or Co(3d) states. The peaks located at ~ 6.8 eV and ~ 8.8 eV are due to TCNE derived electronic states. The obtained core level and valence band results of Co(TCNE)_x, films are compared with those of V(TCNE)_x thin film magnet: a well known system of M(TCNE)_x type of organic magnet, and important points regarding their electronic properties have been brought out.     

NMR and electric impedance study of lithium mobility in fast ion conductors LiTi2 − xZrx(PO4)3 (0 ≤ x ≤ 2)

Materials of the LiTi_2 − xZr_x(PO₄)₃ series (0 ≤ x ≤ 2) were prepared and characterized by powder X-ray (XRD) and neutron diffraction (ND), ⁷Li and ³¹P Nuclear Magnetic Resonance (NMR) and Electric Impedance techniques. In samples with x < 1.8, XRD patterns were indexed with the rhombohedral R3̅c space group, but in samples with x ≥ 1.8, XRD patterns display the presence of rhombohedral and triclinic phases. The Rietveld analysis of the LiTi_1.4Zr_0.6(PO₄)₃ neutron diffraction (ND) pattern provided structural information about intermediate compositions. For low Zr contents, compositions deduced from ³¹P MAS-NMR spectra are similar to nominal ones, indicating that Zr⁴⁺ and Ti⁴⁺ cations are randomly distributed in the NASICON structure. At increasing Zr contents, differences between nominal and deduced compositions become significant, indicating some Zr segregation in the triclinic phase. The substitution of Ti⁴⁺ by Zr⁴⁺ stabilizes the rhombohedral phase; however, electrical performances are not improved in expanded networks of Zr-rich samples. Below 300 K, activation energy of all samples is near 0.36 eV; however, above 300 K, activation energy is near 0.23 eV in Ti-rich samples and close to 0.36 eV in Zr-rich samples. The analysis of electrical data suggests that the amount of charge carriers and entropic terms are higher in Zr-rich samples; however, the increment of both parameters does not compensate lower activation energy terms of these samples. As a consequence of different contributions, the bulk conductivity of Zr-rich samples, measured at room temperature, is one order of magnitude lower than that measured in Ti-rich samples.     

Dielectric,optical and structural properties of Bi4V2−xSrxO11−δ (0.05≤x≤0.20)

Composition Bi₄V_2−xSr_xO_11−δ (0.05≤x≤0.20) is synthesized by melt quench technique followed by heat treatment at 800 °C for 12 h. These compounds are characterised by X-ray diffraction, Fourier transform infrared (FTIR) spectroscopy, UV–visible spectroscopy, impedance spectroscopy and scanning electron microscopy. X-ray diffraction patterns of all the samples show γ-phase stabilization at room temperature except x=0.05 heat treated sample. The optical band gap of all the samples is observed in semiconducting range. The lowest and the highest optical band gap is 2.39 eV and 2.57 eV for x=0.10 heat treated and x=0.20 quenched samples, respectively. The highest value of dielectric constant is obtained ~10⁷ with very low dielectric loss for x=0.15 and 0.20 samples at ~350 °C and below 10 Hz. The grain size increases with dopant concentration leads to increase the dielectric constant.     

Electrical conduction and thermoelectric properties of perovskite-type BaBi1−xSbxO3

To elucidate the thermoelectric properties at high temperatures, the electrical conductivity and Seebeck coefficient were measured at temperatures between 423 K and 973 K for perovskite-type ceramics of BaBi_1?xSb_xO₃ solid solutions with x=0.0–0.5. All the ceramics exhibit p-type semiconducting behaviors and electrical conduction is attributed to hopping of small polaronic holes localized on the pentavalent cations. Substitution of Bi with Sb causes the electrical conductivity σ and cell volume to decrease, but the Seebeck coefficient S to increase, suggesting that the Sb atoms are doped as Sb⁵⁺ and replace Bi⁵⁺, reducing 6s holes conduction from Bi⁵⁺(6s⁰) to Bi³⁺ (6s²). The thermoelectric power factor S ²σ has values of 6×10^?8–3×10^?5 W m^?1 K^?2 in the measured temperature range, and is maximized for an Sb-undoped BaBiO_3?δ, but decreases upon Sb doping due to the decreased σ values.     

The effect of chemical pressure in rutheno-cuprates

We have studied the effect of negative chemical pressure in the RuGd_1.5(Ce_0.5?xPr_x)Sr₂Cu₂O_10?δ with Pr content of 0.0 ? x ? 0.2. This is also investigated using the bond length results obtained from the Rietveld refinement analysis. The c parameter and cell volume increase with x for 0.0 ? x ? 0.15. The width of the resistivity transition also increases with Pr concentration, indicating higher inhomogeneity and oxygen deficiency. The difference in the ionic valences of Pr^3+,4+ and Ce⁴⁺ causing different hole doping, the difference in the ionic radii, and oxygen stoichiometry affect the superconducting transition. The magnetoresistance shows a cusp around 135 K which lies between the antiferromagnetic and ferromagnetic transition temperatures, which is probably due to the presence of a spin glass region. There exist two magnetic transition temperatures for 0.0 ? x ? 0.2 which respectively change from T_M = 155 K to 144 K and from T_irr = 115 K to 70 K. The magnetization versus applied magnetic field isotherms at 77 K and 300 K show that the remanent magnetization and coercivity are lower for samples with higher Pr content.     

Microwave sol-gel process of KGd(WO4)2:Ho3+/Yb3 phosphors and their upconversion photoluminescence properties

Double tungstate KGd_1−x(WO₄)₂:Ho³⁺/Yb³⁺ phosphors with doping concentrations of Ho³⁺ and Yb³⁺ (x=Ho³⁺+Yb³⁺, Ho³⁺=0.05, 0.1, 0.2 and Yb³⁺=0.2, 0.45) were successfully synthesized by the microwave sol–gel method, and the upconversion mechanisms were investigated in detail. The synthesized particles formed after heat-treatment at 900 °C for 16 h showed a well crystallized morphology with particle sizes of 2–5 μm. Under excitation at 980 nm, the UC intensities of KGd_0.7(WO₄)₂:Ho_0.1Yb_0.2 and KGd_0.5(WO₄)₂Ho_0.05Yb_0.45 particles exhibited yellow emissions based on a strong 550-nm emission band in the green region and a strong 655-nm emission band in the red region, which were assigned to the ⁵S₂/⁵F₄→⁵I₈ and ⁵F₅→⁵I₈ transitions, respectively. The Raman spectra of the doped particles indicated the presence of strong peaks at higher frequencies of 764, 812, 904, 984, 1050, 1106, 1250 and 1340 cm⁻¹ induced by the disorder of the [WO₄]²⁻ groups with the incorporation of the Ho³⁺ and Yb³⁺ elements into the crystal lattice or by a new phase formation.     

Water vapour solubility and conductivity study of the proton conductor BaCe(0.9 − x)ZrxY0.1O(3 − δ)

The perovskite BaCe_(0.9 ? x)Zr_xY_0.1O_(3 ? δ) has been prepared by solid state reaction at 1400 °C and conventional sintering at 1700 °C. Water uptake experiments performed between 400 and 600 °C, at a water vapour pressure of 0.02 atm, provide data on the concentration of protons incorporated in the sample. The direct current conductivity has been measured as a function of oxygen partial pressure, at a water vapour partial pressure of 0.015 atm. The total conductivity has been resolved into a p-type and an ionic component using a fitting procedure appropriate to the assumed defect model. An estimation of the protonic component was made by assuming a conductivity isotope effect between 1.4 and 1.8. The total conductivity, obtained using impedance spectroscopy has been measured as a function of temperature in the water and heavy water exchanged states. The activation energy has been found to be 0.56 eV to 0.59 eV in the water exchanged state with values 0.03 to 0.04 eV higher in the heavy water exchanged state. Impedance spectra measured at 200 °C showed a reduction in grain boundary resistivity with increasing cerium content. The stability of the compounds to carbon dioxide has been studied by thermogravimetry.     

Radiation stability of M1 − xPrxF2 + x (M = Ca,Sr, Ba) crystals

The radiation stability of the mixed crystals M_1 ? xR_xF_2 + x (M = Ca, Sr, Ba) depends on types of the alkaline-earth and rare-earth ions. Different to Eu- and Ce-containing systems, M_1 ? xPr_xF_2 + x solid solutions have a low radiation resistance, which may be associated with hole trapping on praseodymium ion according to the reaction Pr³⁺ → Pr⁴⁺ which is typical for praseodymium. The coloration efficiency of M_1 ? xPr_xF_2 + x crystals grows in the row Ca → Sr → Ba, which is explained satisfactorily within the model of rare-earth clusters, the structure of which is determined by the ratio of the base alkaline-earth cation to the praseodymium ion radii.     

Improving the dielectric constant of Al2O3 by cerium substitution for high-k MIM applications

Process compatible high-k dielectric thin films are one of the key solutions to develop high performance metal–insulator–metal (MIM) structures for future microelectronic devices. Engineered cerium–aluminate (Ce_xAl_2–xO₃) thin films were deposited on titanium nitride metal electrodes by electron-beam co-evaporation of ceria and alumina in a molecular beam deposition chamber. X-ray photoelectron spectroscopy clearly reveals that Ce cations can be stabilized in the 3+ valence state in Ce_xAl_2–xO₃ up to x = 0.7 by accommodation in the alumina host matrix. Higher Ce content was observed to result in cerium dioxide segregation in cerium aluminate matrix, probably due to the chemical tendency of Ce cations to exist rather in the 4+ than in the 3+ state. Electrical characterization of the X-ray amorphous Ce_0.7Al_1.3O₃ films reveals a dielectric constant value of about 11 and leakage current lower than 10^?4 A/cm². No parasitic low-k interface formation between the high-k Ce_0.7Al_1.3O₃ film and the TiN metal electrode is detected.     

A comparison of electrochromic properties of sol–gel derived amorphous and nanocrystalline tungsten oxide films

A pristine acetylated peroxotungstate sol with and without 4 wt% of oxalic acid dihydrate (OAD) yielded nanocrystalline and amorphous tungsten oxide (WO₃) films respectively by dip coating technique. Contrary to the expected trend, whereby, the nanostructured 4% OAD film with a triclinic modification should have shown superior electrochromic efficiency, its amorphous 0% OAD counterpart exhibits higher optical modulation and coloration efficiency at photopic wavelengths. This anomalous behavior of the amorphous 0% OAD film was correlated to a higher W⁵⁺ content in its colored state. The colored nanocrystalline 4% OAD film contained a lower proportion of the W⁵⁺ color centers. Under the same level of lithiation, while the 4% OAD film was also constituted by W⁴⁺ states, its 0% OAD counterpart did not contain any 4+ states of tungsten. X-ray photoelectron spectroscopic (XPS) investigations also confirmed that the single peak at ∼1.4 eV in the absorption coefficient–wavelength spectrum of the colored 0% OAD film arises from the small polaronic transitions between the W⁶⁺ and W⁵⁺ states of tungsten whereas the W⁶⁺–W⁵⁺ and the W⁵⁺–W⁴⁺ charge transitions produce two distinct peaks at 1.2 and 1.6 eV in the α–λ spectrum of the colored 4% OAD film. The microstructure of the 4% OAD film, characterized by an interconnected network of nanocrystallites and pores promotes rapid ion insertion and extraction. Therefore, the larger magnitudes of NIR reflectance modulation, diffusion coefficient for lithium, electrochemical activity and faster color–bleach kinetics observed for the 4% OAD film, are a direct consequence of its structure. Band gap widening upon lithium insertion observed for both films, is a repercussion of Burstein–Moss effect and structural changes that occur upon coloration.     

Effect of Li2O on the structure,electrical and dielectric properties of xLi2O·(20−x)CaO·30P2O5·30V2O5·20Fe2O3 glasses

Glasses of the general formula xLi₂O·(20?x)CaO·30P₂O₅·30V₂O₅·20Fe₂O₃ with x=0, 5, 10, 15 and 20 mol% were prepared; IR, density, electrical and dielectric properties have been investigated. Lithia-containing glasses revealed more (P₂O₇)^4?, FeO₆, V–O^? and PO^? groups and mostly have lower densities than those of lithia-free ones. The electrical properties showed random behavior by replacing Li₂O for CaO, which has been assigned to the change of the glass structure. The results of activation energy and frequency-dependent conductivity indicate that the conduction proceeds via electronic and ionic mechanisms, the former being dominant. The mechanism responsible for the electronic conduction is mostly thermally activated hopping of electrons from Fe(II) ions to neighboring Fe(III) sites and/or from V⁴⁺ to V⁵⁺. The dielectric constant (ε′) showed values that depend on the structure of glass according to its content of Li₂O. The (ε′) values are ranging between 3 and 41 at room temperature for 1 kHz, yet at high temperatures, glass with 20 mol Li₂O exhibits values of 110 and 3600 when measurement was carried out in the range 0.1–1 kHz, and at 5 MHz, respectively.