铁磁/反铁磁双层膜系统中交换各向异性及其厚度依赖性

研究铁磁/反铁磁双层膜系统中交换偏置场和矫顽场的冷却磁场依赖性.结果表明,随着冷却磁场的增加,交换偏置场由负值向正值转变.在转变点附近,矫顽场有-个特别的增强,并达到最大值.结果同相关实验-致.研究铁磁层和反铁磁层厚度对交换偏置场和矫顽场的影响.发现,正负交换偏置场和矫顽场随着铁磁层厚度的增大而减小,但随反铁磁层厚度的变化关系复杂.在正交换偏置场的情形,随反铁磁层厚度的增大,交换偏置场增强,矫顽场减弱;在负交换偏置场的情形,随反铁磁层厚度的增大,交换偏置场减弱,矫顽场增强.     

张应力对铁磁/反铁磁体系交换偏置的影响

 采用能量极小原理及Stoner-Wohlfarth模型,研究了张应力对铁磁/反铁磁双层薄膜交换偏置的影响。在不施加外磁场时,根据体系能量与铁磁层磁化强度方向之间的关系,得到了内禀易轴与内禀难轴的位置。交换各向异性与单轴各向异性之间的竞争使体系存在单稳态与双稳态两种不同的状态,直接决定了交换偏置的角度依赖关系。分析磁化过程发现,外磁场在沿内禀易轴及内禀难轴方向施加时,磁滞回线的一支转换场发生突变,另一支转换场保持不变,最终导致交换偏置场和矫顽场出现阶跃行为。在阶跃点处,体系具有较大的交换偏置场和矫顽场。数值计算表明：张应力的大小与方向对交换偏置均有很大的影响,均可以使体系在单稳态与双稳态之间相互转变并导致角度依赖关系发生显著变化。研究表明,应力可作为一种可行的方法来控制和调节铁磁/反铁磁体系的交换偏置。     

Bias Voltage Controlled Positive Magnetoresistance of Fe0.05-C0.95/Si Heterostructures

Fe-doped amorphous carbon films of about lOOnm in thickness are deposited on n-type silicon substrates by pulsed laser deposition （PLD）, and positive magnetoresistance （MR） is observed for these Fe-doped amorphous carbon/n-Si heterostructures under current-perpendicular-to-plane configuration at forward bias. Two MR peaks are observed in the temperature range 40-120 K and the positive MR varies with applied bias voltage. This bias voltage controlled MR may be related to the maguetic-field-controlled freeze out effect and recombination through the deep trapping states in the Fe-doped carbon films.     

A Three-Layer Full Adder/Subtractor Structure in Quantum-Dot Cellular Automata

Nowadays, quantum-dot cellular automata (QCA) is one of the paramount modern technologies for designing logical structures at the nano-scale. This technology is being used in molecular levels and it is based on QCA cells. High speed data transfer and low consumable power are the advantages of this technology. In this paper, we are designing and simulating a fulladder/subtractor with minimum number of cells and complexities in three layers. QCA designer software has been used to simulate the proposed design.     

Training Effect and Hysteretic Behaviour of Angular Dependence of Exchange Bias in Co/IrMn Bilayers

The training effect and the hysteresis behaviour of the angular dependence of exchange bias are extensively investigated upon the variation of the IrMn layer thickness tXrMn in a series of Co/IrMn bilayers. When tIrMn is very small, both of them are negligible. Then they increase very sharply with increasing tUMn and then reach maxima at almost the same value OftXrMn. Finally they both decrease when tIrMn is further increased. The similar variation trends suggest that these phenomena arise from irreversible change of antiferromagnet spin orientations, according to the thermal activation model.     

Behavior of Boron Implanted in Semiconductor Si

Using β-NMR with ¹²B nuclei the temperature dependence of the lattice locations of boron implanted in Si is studied. At low temperature almost 100% of the implanted B is in either substitutional site or nonsubstitutional site. Above 260 K, the nonsubstitutional B rapidly becomes undetectable and disappears at a temperature higher than 325 K due to the fast spin-lattice relaxation. Above 450 K, the fraction of substitutional B increases to 100%. These experimental results are consistently explained by the thermal atomic jump and the dissociation of the defect associated with the nonsubstitutional B. This revised version was published online in September 2006 with corrections to the Cover Date.     

低偏置电流下半导体激光器1/f噪声的相关性

测量了高功率976nm InGaAs量子阱半导体激光器在低于1/30阈值电流下的低频电噪声,提出了以1/f噪声时域信号小波系数相关性与电流的关系来分析噪声来源的方法.结合1/f噪声源理论模型及小波变换系数的特性,完成了不同偏置电流下纯1/f噪声、加白噪声后的1/f噪声两种情况下的对比实验.实验结果表明:所测的低频噪声表现为明显的1/f噪声,对于纯1/f噪声,噪声幅度和小波系数相关性在判断噪声来源时具有相同的结果;对于加白噪声后的1/f噪声,噪声幅度变化很大且不能正确表征1/f噪声来源,而部分尺度下的小波系数相关性仍能作为判断噪声来源的可靠参量.     

Electronic Structure of Si1-xⅣx/Si Superlattices on Si （001）

We have preformed systematical ab initio studies of the structural and electronic properties of short-period Si1-xⅣx/Si （x = 0.125, 0.25, 0.5, Ⅳ=Ge, Sn） superlattices （SLs） grown along the [001] direction on bulk Si. The present calculations reveal that the Si0.875Ge0.125/Si, Si0.75Ge0.25/Si and Si0.875Sn0.125/Si are the F-point direct bandgap semiconductors. The technological importance lies in the expectation that the direct gap Si1-xⅣx/Si SLs may be used as components in integrated optoelectronic devices, in conjunction with the already well-established and highly advanced silicon technology.     

Forming a Type-II Heterojunction in the InAsSb/InAsSbP Semiconductor Structure

Physics of the Solid State - We report on the electroluminescent and I–V characteristics of the n-InAs/n-InAsSb/p-InAsSbP heterostructure grown by metalorganic vapor-phase epitaxy. In the...     

Bias Dependence in Spin-Polarized Tunneling of Ferromagnet/Ferromagnetic Insulator (Semiconductor)/Ferromagnet Junctions

Based on the nearly-free-electron approximation, the bias dependencies of electron transport properties of ferromagnet/ferromagnetic insulator (semiconductor)/ferromagnet junctions have been studied. Resonances appear in electron transmission probability. These resonances cause oscillations in the zero-temperature tunnel current and the resonances occur in tunnel conductance. Tunnel magnetoresistance (TMR) is an oscillatory function of bias. The TMR can reach a value as high as 100%. The bins dependencies of electron transport properties relate to the magnetic configurations of the junctions.     

Theoretical Investigation of Exchange Bias in Compensated Cases

The exchange bias （EB） of the ferromagnetic （FM）/antiferromagnetic （AFM） bilayers in a compensated case is studied by use of the many-body Green＇s function method of quantum statistical theory. The so-called compensated case is that there is no net magnetization on the AFM side of the interface. Our conclusion is that the EB in this case is primarily from the asymmetry of the interracial exchange coupling strengths between the FM and the two sublattices of the AFM. The effects of the layer thickness, temperature and the interracial coupling strength oi2 the exchange bias HE are investigated. The dependence of HE on the FM layer thickness and temperature is qualitatively in agreement with experimental results. HE is nearly inversely proportional to FM thickness. When temperature varies, both HE and He decrease with temperature increasing. The anisotropy of the FM layer only slightly influence He, but does not influence HE.     

Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage

It is shown that the series expansion of the amplitude and variance of the hemispherical semiconductor detector signal in inverse bias voltage allows finding the Fano factor, the product of electron lifetime and mobility, the degree of inhomogeneity of the trap density in the semiconductor material, and the relative variance of the electronic channel gain. An important advantage of the proposed method is that it is independent of the electronic channel gain and noise.     

Effect of megaplastic deformation on the magnetic properties of FeNi alloy

The effect megaplastic deformation has on the coercivity and specific saturation magnetization of soft-magnetic equiatomic FeNi alloy is studied at room temperature in a Bridgman chamber by means of X-ray diffraction, Mössbauer spectroscopy and magnetometry. Structural features responsible for changes in the alloy’s properties at different stages of deformation are revealed.     

Effect of the Semiconductor Quantum Dot Shell Structure on Fluorescence Quenching by Acridine Ligand

The main line of research in cancer treatment is the development of methods for early diagnosis and targeted drug delivery to cancer cells. Fluorescent semiconductor core/shell nanocrystals of quantum dots (e.g., CdSe/ZnS) conjugated with an anticancer drug, e.g., an acridine derivative, allow real-time tracking and control of the process of the drug delivery to tumors. However, linking of acridine derivatives to a quantum dot can be accompanied by quantum dot fluorescence quenching caused by electron transfer from the quantum dot to the organic molecule. In this work, it has been shown that the structure of the shell of the quantum dot plays the decisive role in the process of photoinduced charge transfer from the quantum dot to the acridine ligand, which is responsible for fluorescence quenching. It has been shown that multicomponent ZnS/CdS/ZnS shells of CdSe cores of quantum dots, which have a relatively small thickness, make it possible to significantly suppress a decrease in the quantum yield of fluorescence of quantum dots as compared to both the classical ZnS thin shell and superthick shells of the same composition. Thus, core/multicomponent shell CdSe/ZnS/CdS/ZnS quantum dots can be used as optimal fluorescent probes for the development of systems for diagnosis and treatment of cancer with the use of anticancer compounds based on acridine derivatives.     

Role of the Metal/Semiconductor interface in quantum size effects: Pb /Si(111)

Self-organized islands of uniform heights can form at low temperatures on metal/semiconductor systems as a result of quantum size effects, i.e., the occupation of discrete electron energy levels in the film. We compare the growth mode on two different substrates [Si(111)- (7x7) vs Si(111)- Pb(sqrt[3]xsqrt[3] )] with spot profile analysis low-energy electron diffraction. For the same growth conditions (of coverage and temperature) 7-step islands are the most stable islands on the (7x7) phase, while 5-step (but larger islands) are the most stable islands on the (sqrt[3]xsqrt[3] ). A theoretical calculation suggests that the height selection on the two interfaces can be attributed to the amount of charge transfer at the interface.     

Simulation of Surfactant Effects on Growth of Semiconductor Hetero-Epitaxial Sb-Ge/Si(111)

A kinetic Monte Carlo simulation is performed in order to study the effect of Sb as a surfactant on the growth of Ge/Si(111). In our model the exchange mechanism between Ge and Sb atoms and the re-exchange mechanism in which the exchanged Ge adatom re-exchange with the lifted Sb atom to return to the surfactant layer, are considered. Our simulation shows the re-exchange process plays an important role on the growth mode transition in Ge/Sb/Si(111)
system. The influences of the substrate temperature and the deposition rate on the growth of Ge/Sb/Si(111) system is discussed.     

Effect of Bias Voltage and Deposition Rate on the Structure and Coercivity of NiFe Films

Physics of the Solid State - The effect of the bias voltage Ub and the deposition rate $${v}$$ on the structure, grain size D, and coercivity Hc of NiFe films with a thickness d from 30 to 980 nm,...     

非磁性掺杂下的铁磁/反铁磁系统中的交换偏置和矫顽场

采用Monte Carlo方法,分别讨论了在铁磁/反铁磁双层膜和铁磁/反铁磁单层混合膜中,掺入非磁性物质后,掺杂浓度对交换偏置以及矫顽场的影响.计算结果表明:随着掺杂浓度的增大,双层膜和单层膜交换偏置都有先增大后减小的现象,而其矫顽场则先减小后增大.在相同掺杂浓度下,对随机掺杂和规则掺杂两种不同掺杂方式的结果比较发现:铁磁/反铁磁双层膜中,规则掺杂下产生的交换偏置和矫顽场都得到了增强;对于单层混合膜,随机掺杂下的交换偏置更强,规则掺杂下的矫顽场更大.研究发现对于双层膜规则掺杂可明显地导致其磁滞回线的不对称性,说明铁磁/反铁磁系统中磁滞回线的不对称性与界面自旋微结构密切相关.