Luminescence of CsBr:Eu films grown by liquid-phase epitaxy

By liquid-phase epitaxy from an aqueous alcoholic solution, we have obtained films of the well-known storage phospor CsBr:Eu, and we have studied their cathodoluminescence and photoluminescence (PL) spectra compared with the undoped CsBr films. We have established that the structure of the photoluminescence centers of the CsBr:Eu films when excited by laser radiation in the absorption band of the Eu²⁺ ions (λ = 337 nm) includes Eu²⁺-V_Cs isolated dipole centers and CsEuBr₃ aggregate centers, and also luminescence centers based on inclusions of hydroxyl group OH⁻ with the corresponding emission bands in the 440 nm, 520 nm, and 600 nm regions. We have studied the dependence of the spectra and the intensity of the photoluminescence for CsBr:Eu films on annealing temperature in air at 423–483 K, compared with analogous dependences for CsBr:Eu single crystals obtained from the melt. We have shown that annealing the films at T = 423–463 K leads to rapid formation of CsEuBr3 aggregate luminescence centers, while for T > 473 K thermal degradation of these centers occurs. We conclude that the observed differences between the photoluminescence spectra of CsBr:Eu films and CsBr:Eu single crystals may be due to additional doping of the films with OH⁻ ions. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 2, pp. 191–194, March–April, 2006.     

Blue Photoluminescence of Oxidized Films of Porous Silicon

It is found that the films of n ⁺-type porous silicon of low (10–50%) porosity exhibit photoluminescence in the region 400–500 nm after a 5-month storage in an air atmosphere. The spectrum of blue photoluminescence of the least porous but strongly oxidized films has maxima at 417, 435, and 465 nm. The same spectrum structure manifests itself upon the introduction of an Er³⁺- and Yb³⁺-containing complex. The mechanisms of blue photoluminesence are discussed.     

Photoluminescence properties of europium-doped porous silicon nanocomposites

We present new results concerning the photoluminescence properties of europium (Eu³⁺) incorporated in porous silicon (PS) matrix. Eu³⁺ ions were embedded in the matrix by simple impregnation of PS layers in chloride solution of europium. Complete and uniform penetration of Eu³⁺ into the pores is proved from RBS study.The PL spectrum shows the existence of several peaks superposed to the PL band of PS. These peaks are related to level transitions in Eu³⁺. The effect of the ray excitation on the PL shows that energy transfer is not the principal route for radiative recombination.A systematic study of the PL versus annealing temperature was performed. It was found that the optimised PL spectrum is found after annealing at 1000°C. Low-temperature study of the PL shows an important increase of the intensity and a broadness of the peaks due to the appearance of a second crystallographic site.     

Energy transfer between Ce3+ and Eu2+ in doped KSrPO4

Powder samples of KSrPO₄ doped with Eu²⁺ and Ce³⁺ were prepared by combustion-assisted synthesis. Their structures and photoluminescence spectra were systemically studied. Energy transfer from Ce³⁺ to Eu²⁺ was observed by investigating the optical properties from photoluminescence spectra in Eu²⁺ single doped and Ce³⁺–Eu²⁺ co-doped KSrPO₄. The enhancement of UV excitation is attributed to energy transfer from Ce³⁺ to Eu²⁺, and Ce³⁺ plays a role as a sensitizer. Ce³⁺–Eu²⁺ co-doped KrSrPO₄ powders can possibly be applied as blue phosphors in the fields of lighting and display.     

Luminescence characteristics of energy transfer between Ce<Superscript>3+</Superscript> and Eu<Superscript>2+</Superscript> in NaMgPO<Subscript>4</Subscript> phosphor

Powder samples of NaMgPO₄ doped with Eu²⁺ and Ce³⁺ were prepared and their photoluminescence spectra were systemically studied. Energy transfer from Ce³⁺ to Eu²⁺ in NaMgPO₄ phosphor was observed by investigating the optical properties from photoluminescence spectra in Eu²⁺ or Ce³⁺ singly doped and Eu²⁺–Ce³⁺ codoped sodium magnesium orthophosphates, NaMgPO₄. The enhancement of UV excitation is attributed to energy transfer from Ce³⁺ to Eu²⁺, and Ce³⁺ plays a role as a sensitizer. Ce³⁺–Eu²⁺ codoped NaMgPO₄ phosphors in which Eu²⁺ can be efficiently excited by 390 nm are potential candidates for phosphor-converted LEDs.     

Luminescence of CaGa<Subscript>2</Subscript>Se<Subscript>4</Subscript>:Eu crystals

We have studied photoluminescence and thermoluminescence (PL and TL) in CaGa₂Se₄:Eu crystals in the temperature range 77–400 K. We have established that broadband photoluminescence with maximum at 571 nm is due to intracenter transitions 4f⁶ 5d–4f⁷ (⁸S_7/2) of the Eu²⁺ ions. From the temperature dependence of the intensity (log I–10³/T), we determined the activation energy (E _a = 0.04 eV) for thermal quenching of photoluminescence. From the thermoluminescence spectra, we determined the trap depths: 0.31, 0.44, 0.53, 0.59 eV. The lifetime of the excited state 4f6 5d of the Eu²⁺ ions in the CaGa₂Se₄ crystal found from the luminescence decay kinetics is 3.8 μsec. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 1, pp. 112–116, January–February, 2009.     

Luminescence of aggregate centers in CsBr:Eu2+ single crystals

We have used the Bridgman method to grow CsBr:Eu²⁺ single crystals, adding an activator to the mix in the form of Eu₂O₃ in amounts of 0.0125, 0.0250, and 0.0500 mole %. At T = 300 K, we studied the absorption spectra, the photoluminescence (PL) spectra, and the photostimulated luminescence (PSL) spectra of the grown crystals. We have established that the structure of the photoluminescence and photostimulated luminescence centers in crystals grown from the CsBr:Eu₂O₃ mix includes isolated dipole centers Eu²⁺-V_Cs, emitting in bands with maxima at 432 nm and 455 nm respectively, and in crystals grown at activator concentrations of 0.025 and 0.050 mole % they also include aggregate centers (AC) based on CsEuBr₃ nanocrystals with emission bands at 515 m and 523 nm. We have shown that the maximum concentration of aggregate centers of the CsEuBr₃ nanocrystal type in CsBr:Eu²⁺ crystals is achieved for an activator content in the mix within the range 0.01–0.05 mole %. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 3, pp. 359–362, May–June, 2006.     

Effect of the external medium on the spectral characteristics of polypropylene films doped with Eu(fod)<Subscript>3</Subscript> molecules

We have studied the effect of external factors (humidity, pressure, temperature) on the stability of the organometallic compound Eu(fod)3 (fod = 6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octadione) impregnated into polypropylene (PP) using supercritical CO₂. We have established that under the influence of external conditions, there is a decrease in the integrated intensity of the absorption band for the Eu(fod)₃ molecule and the photoluminescence (PL) of Eu³⁺ ions as a function of the properties of the medium, and in the presence of water molecules the shape of the bands for these spectra changes. We propose a physical model explaining the behavior of the absorption and photoluminescence spectra when the polypropylene films are stored under different conditions. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 1, pp. 42–47, January–February, 2007.     

Luminescent properties of Sr5(PO4)3 Cl:Eu2+, Mn2+ as?a?potential phosphor for UV-LED-based white LEDs

Eu²⁺ and Mn²⁺ co-activated Sr₅(PO₄)₃Cl phosphors with blue and orange color double emission bands, under a broad-band excitation wavelength range of 340–400 nm, were synthesized by the solid-state reaction. It was found that the processing parameters, including the fluxes, annealing time and activators concentrations, affect the emission intensity and other luminescent properties. Energy transfer between Eu²⁺ and Mn²⁺ was discovered and the transfer efficiency was also estimated based on relative intensities of Eu²⁺ and Mn²⁺ emission. Thus the relative strength of blue and orange emission intensities could be tuned by varying the relative concentration of Eu²⁺ and Mn²⁺. Since the photoluminescence excitation spectra of the newly developed Sr₅(PO₄)₃Cl:Eu²⁺, Mn²⁺ phosphors exhibit a strong absorption in the range of 340–400 nm, they are promising for producing UV-LED-based white LEDs.     

Morphology and crystalline-phase-dependent luminescence of Li-doped Gd2O3:Eu3+ thin films grown by pulsed laser deposition

Gd₂O₃:Eu³⁺ and Li-doped Gd₂O₃:Eu³⁺ luminescent thin films have been grown on Si(100) substrates using pulsed laser deposition. The films grown at different deposition conditions show different crystalline and morphology structures and luminescent characteristics. Although both cubic and monoclinic crystalline structures were observed in both Gd₂O₃:Eu³⁺ and Li-doped Gd₂O₃:Eu³⁺ films, the cubic structure becomes more dominant for Li-doped Gd₂O₃:Eu³⁺ films. The photoluminescence brightness data obtained from Li-doped Gd₂O₃:Eu³⁺ films indicate that Si(100) is a promising substrate for growth of high-quality Li-doped Gd₂O₃:Eu³⁺ thin-film red phosphor. In particular, the incorporation of Li⁺ ions into the Gd₂O₃ lattice induced a change of crystallinity and enhanced surface roughness. Two major factors to determine photoluminescence brightness for Li-doped Gd₂O₃:Eu³⁺ films were crystalline phase and surface roughness. The highest emission intensity was observed with Gd_1.84Li_0.08Eu_0.08O₃, whose brightness was a factor of 2.1 larger than that of Gd₂O₃:Eu³⁺ films. This phosphor is promising for applications in flat-panel displays. PACS 78.20.-e; 78.55.-m; 78.66.-w     

luminescence of BaGa<Subscript>2</Subscript>Se<Subscript>4</Subscript> crystals activated by Eu<Superscript>2+</Superscript> and Ce<Superscript>3+</Superscript> ions

We have studied the effect of doping with Eu²⁺ and Ce³⁺ ions on the photoluminescence (PL) of BaGa₂Se₄ crystals in the temperature range 77–300 K. We have established that the broad bands with maxima at wavelengths 456 nm and 506 nm observed in the photoluminescence spectra of BaGa₂Se₄:Ce³⁺ crystals are due to intracenter transitions 5d → ²F_7/2 and 5d →²F_5/2 of the Ce³⁺ ions, while the broad photoluminescence band with maximum at 521 nm in the spectrum of BaGa₂Se₄:Eu²⁺ is associated with 4f⁶ 5d → 4f⁷ (⁸S_7/2) transitions of the Eu²⁺ ion. We show that in BaGa₂Se₄:Eu²⁺,Ce³⁺ crystals, excitation energy is transferred from the Ce³⁺ ions to the Eu²⁺ ions.     

Thermal quenching of photoluminescence of Eu3+ ions in an Eu(fod)3 complex

We have studied the photoluminescence (PL) spectra of Eu³⁺ ions in the complex Eu(fod)₃ (fod = 6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octadione) and also in polymers doped with Eu(fod)₃ with the help of supercritical carbon dioxide. We have established that in the temperature range 20°C–100°C, we observe thermal quenching of the photoluminescence of Eu³⁺ ions, and this quenching is most efficient in polycrystalline Eu(fod)₃ powder and Eu(fod)₃-doped polypropylene. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 3, pp. 315–319, May–June, 2006.     

Structural,luminescent, and morphological properties of Eu3+-doped NaTaO3 thin films grown by magnetron sputtering

Radio-frequency (RF)-sputtered Eu³⁺-doped NaTaO₃ thin films were grown at different deposition temperatures. The X-ray diffraction patterns revealed that all thin films contained two mixed phases of NaTaO₃ and Na₂Ta₈O₂₁. The photoluminescence spectra of the thin films consisted of a strong orange emission (592 nm) and two weak red bands (616 nm and 689 nm), suggesting that more Eu³⁺ ions in the NaTaO₃ host crystal were located at inversion symmetry sites. The maximum intensities of all emission peaks were achieved for the sample grown at 100 °C, in which the gravel-shaped crystallites evolved with a band gap energy of 4.61 eV, chromaticity coordinates of (0.554, 0.434), and average transmittance of 92.4%. These results indicate that the photoluminescence intensity, band gap energy, and color tunability can be achieved for RF-sputtered Eu³⁺-doped NaTaO₃ thin films by varying the growth temperature.     

PL and EL characterizations of ZnO:Eu, Li films derived by sol-gel process

ZnO:Eu³⁺, Li⁺ films prepared by the dip-coating method were characterized by photoluminescence (PL) and electroluminescence (EL). When the ZnO:Eu³⁺, Li⁺ films were excited using UV light with energy corresponding to the band-to-band excitation of the host matrix, the PL spectra showed emissions from both ZnO and Eu³⁺ ions, while their EL spectra showed emissions only from Eu³⁺ ions, and no emission from ZnO could be detected. It is found that the EL emission intensity B is dependent on the applied voltage, B=B_o exp(−bV^−1/2). With increasing frequency, the EL intensity dramatically increases at lower frequencies (<1000 Hz), and then increases gradually at higher frequencies (>1000 Hz).     

Luminescence in Colorless,Transparent, Thermally Stable Thin Films of Eu<Superscript>3+</Superscript> and Tb<Superscript>3+</Superscript> β-diketonates in Hybrid Inorganic–Organic Zinc-based Sol–Gel Matrix

Luminescent zinc-based hybrid inorganic–organic films with rare--earth (RE) complexes have been prepared using a non-alkoxide sol–gel process. The films were fabricated by the dip-coating method starting from zinc acetate dihydrate, rare earth chloride, lactic acid as hydrolytic catalyst, and anhydrous ethanol. The β-diketones thenoylltrifluoroacetone (Httfa) and dibenzoylmethane (Hdbm) were used as ligands to Eu³⁺ and Tb³⁺, respectively. After deposition of the first layer, the films were fired at temperatures between 50 and 300 °C, in air. Photophysical properties such as excitation, emission and emission, lifetimes were determined for the films obtained in different conditions. Eu³⁺/ttfa and Tb³⁺/dbm films fired at 300 and 250 °C, respectively, are still transparent and gave rise to intense emission when excited through the ligand (antenna effect).     

Luminescence of an erbium- and ytterbium-containing complex in porous silicon films

Er³⁺ and Yb³⁺ ions are introduced into porous silicon films, stabilized by oxidation in an oxygen plasma, in the form of a gadolinium oxychloride-based luminophor by means of thermal diffusion. An investigation is made of the luminescence and photoexcitation spectra of samples with Er³⁺ (10 and 30 wt.%), Yb³⁺ (10 wt.%), and Er³, Yb³⁺⁺ (10 wt.% each). It is shown that the intense IR luminescence (1.00 and 1.54 μm) is caused by cross-relaxation effects. The most effective excitation of the luminescence has been observed in the UV absorption band of the porous silicon. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 3, pp. 428–433, May–June, 1999.     

The influence of the number of pulses on the morphological and photoluminescence properties of SrAl2O4:Eu,Dy thin films prepared by pulsed laser deposition

The current work reports on the influence of the number of laser pulses on the morphological and photoluminescence properties of SrAl₂O₄:Eu²⁺,Dy³⁺ thin films prepared by the pulsed laser deposition (PLD) technique. Atomic force microscopy (AFM) was used to study the surface topography and morphology of the films. The AFM data showed that the film deposited using a higher number of laser pulses was packed with a uniform layer of coarse grains. In addition, the surface of this film was shown to be relatively rougher than the films deposited at a lower number of pulses. Photoluminescence (PL) data were collected using the Cary Eclipse fluorescence spectrophotometer equipped with a monochromatic xenon lamp. An intense green photoluminescence was observed at 517 nm from the films prepared using a higher number of laser pulses. Consistent with the PL data, the decay time of the film deposited using a higher number of pulses was characteristically longer than those of the other films. The effects of laser pulses on morphology, topography and photoluminescence intensity of the SrAl₂O₄:Eu²⁺,Dy³⁺ thin films are discussed.     

稀土（Tb，Gd）掺杂多孔硅的光致发光性能研究

用电化学方法对多孔硅薄膜进行了稀土（Tb，Gd）离子的化学掺杂.利用荧光分光光度计测试了样品的光致发光特性.用扫描电子显微镜研究了薄膜的表面形貌.用卢瑟福背散射谱分析了稀土离子在多孔硅薄膜中的分布情况.结果表明，Tb的掺入显著增强了多孔硅的发光强度，并且发光峰位出现蓝移.这是由于Tb³⁺的4f能级⁵D_{4—⁷F3，⁵D4—⁷F关键词： 多孔硅 稀土掺杂 光致发光}     

Improved photoluminescence of pulsed-laser-ablated Y<Subscript>1-x</Subscript>Gd<Subscript>x</Subscript>VO<Subscript>4</Subscript>:Eu<Superscript>3+</Superscript> thin film phosphors by Gd substitution

Gd-substituted Y_1-xGd_xVO₄:Eu³⁺ luminescent thin films have been grown on Al₂O₃(0001) substrates using pulsed-laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, surface morphology, and photoluminescence (PL) of the films are highly dependent on the amount of Gd. The photoluminescence (PL) brightness data obtained from Y_1-xGd_xVO₄:Eu³⁺ films grown under optimized conditions have indicated that the PL brightness is more dependent on the surface roughness than the crystallinity of the films. In particular, the incorporation of Gd into the YVO₄ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with Y_0.57Gd_0.40Eu_0.03VO₄ thin film whose brightness was increased by a factor of 2.5 and 1.9 in comparison with that of YVO₄:Eu³⁺ and GdVO₄:Eu³⁺ films, respectively. This phosphor have application to flat panel displays. PACS 78.20.-e; 78.55.-m; 78.66.-w     

Facile patterning of luminescent GdVO4:Ln (Ln?=?Eu3+, Dy3+, Sm3+) thin films by microcontact printing process

Ordered arrays of luminescent GdVO₄:Ln (Ln = Eu³⁺, Dy³⁺, Sm³⁺) films with dot patterns have been successfully fabricated via microcontact printing method. The soft-lithography process utilizes a PDMS elastomeric mold as the stamp combined with a Pechini-type sol–gel process to produce luminescent patterns on quartz plates, in which a GdVO₄:Ln (Ln = Eu³⁺, Dy³⁺, Sm³⁺) precursor solution was employed as ink. The ordered luminescent GdVO₄:Ln patterns were revealed by optical microscopy and their microstructure, consisting of nanometer-scale particles, as demonstrated by scanning electronic microscopy observations. In addition, photoluminescence and cathodoluminescence were carried out to characterize the patterned GdVO₄:Ln (Ln = Eu³⁺, Dy³⁺, Sm³⁺) samples. Upon UV-light or electron-beam irradiation, the rare earth ions Eu³⁺, Dy³⁺, and Sm³⁺ in the crystalline GdVO₄ host show their characteristic transitions dominated by ⁵D₀–⁷F₂, ⁴F_9/2–⁶H_13/2 ,and ⁴G_5/2–⁶H_7/2, respectively. These results make the combining soft lithography with a Pechini-type sol–gel route have potential applications as rare-earth luminescent pixels for next-generation field-emission display devices.