PHASE SEPARATION AND JOSEPHSON-COUPLING ORIGIN FOR THE ANOMALOUS Hc2 BEHAVIOR IN OVERDOPED Bi2Sr2-xLaxCuO6+δ CRYSTALS

Hole-overdoped Bi₂Sr_2-xLa_xCuO_6+$\delta$ single crystals with two coexistent superconducting transitions have been intensively studied by measuring the dc magnetic susceptibility. It is found that the coexistence of these two phases cannot be attributed to any chemical or vortex dynamical effect but to some intrinsic driving force, such as the electronic-driven phase separation. Furthermore, the upper critical fields of the two phases behave in a rather different way; that is, one of them shows a "normal H_c2 behavior" which can be described by the critical fluctuation theory, while the other exhibits an "anomalous H_c2 behavior" and can be well explained by a recent theory based on an assumption of a Josephson-coupling origin, indicating a strong evidence of Josephson-coupling origin for the upward curvature of the so-called H_c2 in high T_c superconductors.     

IRREVERSIBILITY LINE AND THERMAL DEPINNING IN YBa2Cu3O7-δ

By measuring magnetic torque moment in a field-sweeping process, the temperature and field dependence of the critical current density j (with a criterion of electric field) and the normalized relaxation rate Q = d lnj/d ln E of a YBa₂Cu₃O_7-δ thin film were obtained. With a minimum current density (j_min = 10A·cm^-2) the irreversibility lines at different sweeping rates were determined. It was found that these irreversibility lines cannot be fitted to either the melting line or the vortex-glass transition. All the data can be interpreted by the thermally-assisted-flux-flow model. Further investigation shows that, at irreversible tem-perature and field, U_c is much smaller than k_BT, which indicates that the thermal depinning is the real origin of the irreversibility line.     

POSITRON LIFETIME STUDIES OF Y1-xCaxBa2Cu3O7-δ AND Y1-xCaxBa2Cu3-xFexO7-δ

In this paper it is reported that the measurement of the bulk positron lifetime as a function of substitution content x in the temperature range from 70 to 220K was performed in two high-T_c superconducting systems, Y_1-xCa_xBa₂Cu_3-xFe_xO_7-δ and Y_1-xCa_xBa₂Cu₃O_7-δ. It was found that τ_B of both systems decreases significantly with x and the temperature dependence of τ_B is very weak in normal state. In lower temperature region (Tc), a dramatic x-dependent temperature variation of τ_B was observed in the Ca-substituted system: from a decrease of τ_B with decreasing T to an increase of τ_B. With increasing x, the temperature dependence of τ_B remains weak in the Ca- and Fe- substituted systems. Compared with the experimental data of positron lifetime in other substituted systems and the calculation of the positron density distribution, the authors suggest that positron bulk lifetime spectra behaviour can be interpreted by the physical model based on the transfer of electron density between the CuO₂ planes and Cu-O chains. Therefore, the study of positron lifetime spectra provides a useful means to detect the local charge density and to study the correlation between the electronic structure and the high-T_c superconductivity.     

CO2激光干涉检验轮胎面面形及双曲率半径

A torus is a kind of aspherical surface，different from quadratic rotary surface.It plays an important role in special optical systems.However，up to now there is no effective method to test its wavefront.In this paper，a method is proposed using CO₂ (10.6μm) IR interferometry to test a torus，whose curvature radii is different from submillimeter deducing to micrometer，the principle is also given.Then a example torus is tested in self-developed CO₂ laser spherical interferometer.Some interferograms are shown.According to these interferograms the wavefront error and the difference of two radii can be obtained and shown in this paper.     

Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS–HEMT

We present an AlInN/AlN/GaN MOS–HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al₂O₃ dielectric layer and a 0.3 μm field-plate (FP)-MOS--HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS--HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS--HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance--voltage (C--V) curve of the FP-MOS--HEMT demonstrates a high-quality interface of Al₂O₃/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μ m and a negligible double-pulse current collapse is achieved in the FP-MOS--HEMT. This is attributed to the adoption of an ultra-thin Al₂O₃ gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al₂O₃ FP-MOS--HEMT to deliver high currents and power densities in high power microwave technologies.     

EFFECT OF THE Ba VACANCY ON THE FLUX PINNING IN YBaxCu3O7-δ SYSTEM

A series of Y123 single phase samples with various Ba vacancy concentration was prepared by making their Ba contents deviate from the stoichiometric composition. The measurements of their structure, superconductivity and flux pinning behaviour were systematically carried out. It is found that, compared with YBa₂Cu₃O_6.96 sample, the strength of the flux pinning in YBa_xCu₃O_7-δ(1.8≤x<2.0) samples is increased, and that there is an optimum value of Ba vacancy concentration for the maximum flux pinning force density. The possible origin of the flux pinning centers to determine the flux pinning behavior at higher field is discussed in detail. We suggest that the flux pinning effect at lower field may stein from the interaction between the vortex and the surfaces of grains, and that the flux pinning mechanism at higher field belongs to the core interaction.     

ELECTROCHEMICAL OXIDATION OF La2CuO4 SINGLE CRYSTALS

Bulk superconducting La₂CuO_4+δ single crystals are obtained by using electrochemical intercalation technique from the as-grown insulating samples. Oxidation is carried out by constant current I=10μA at temperature T=70℃ and room temperature, respectively. Structure and magnetic properties are studied by low-temperature X-ray diffraction and susceptibility measurements. A superconducting phase with T_c of 19K and δ-0.12 can be attributed to the formation of oxygen clusters. Room temperature oxidation is inhomogeneous: two superconducting phases with T_c1 of 24K and T_c2 of 8K and an antiferromagnetic phase are coexisting in the crystal. It is found that the appearance of T_c in this system has the "step" tendency.     

Superconducting properties of barium in three phases under high pressure from first principles

Electron-phonon coupling (EPC) in the three high-pressure phases of Ba is investigated using a pseudopotential plane-wave method based on density functional perturbation theory. The calculated values of superconducting critical temperature T c of Ba-I and Ba-II under pressure are consistent well with the trends observed experimentally. Moreover, Ba-V is found to be superconducting with a maximum T c exceeding 7.8 K at 45 GPa. With the increase of pressure, the values of T c increase in Ba I and Ba-II but the value of T c decreases in Ba-V. For Ba-I at pressures below 2 GPa, the increases of logarithmic average frequency ω log and electron-phonon coupling parameters λ both contribute to the enhancement of T c . For all the three phases at pressures above 2 GPa, T c is found to be primarily determined by λ . Further investigation reveals that for all the three phases, the change in λ with pressure can be explained mainly by change in the phonon frequency. Thus for Ba-II and Ba-V, although they exhibit completely different superconducting behaviors, their superconductivities have the same origin; the pressure dependence of T c is determined finally by the pressure dependence of phonon frequency.     

Intrinsic tunneling study of underdoped Bi2Sr2-xLaxCuO6+δ superconductors

We report on a tunneling study of underdoped submicron Bi₂Sr_2-xLa_xCuO_6+δ (La-Bi2201) intrinsic Josephson junctions (IJJs), whose self-heating is sufficiently suppressed. The tunneling spectra are measured from 4.2 K up to the pseudogap opening temperature of T^* = 260 K. The gap value found from the spectral peak position is about 35 meV and has a weak temperature dependence both below and above the superconducting transition temperature of T_c = 29 K. Since the superconducting gap should have a value of 10-15 meV, our results indicate that the pseudogap (～35 meV) plays an important role in the underdoped La-Bi2201 intrinsic tunneling spectroscopy down to the lowest temperature of 4.2 K. However, the contribution of the superconducting gap can be separated by normalizing the spectra to the one near and above T_c, which shows that the IJJs can be a useful tool for the study of the electronic properties of the La-Bi2201 cuprate superconductors.     

PHASE TRANSITIONS IN Bi2Sr2(Cu1-zFez)O6+δ

We have investigated, by X-ray diffraction, a series of single crystals of Bi-based oxides with the nominal composition Bi₂Sr₂(Cu_1-zFe_z)O_6+δ(0≤z≤0.55). In this system we observed two structural phase transitions with the increase of the doping content. The first transition, from an incommensurate monoclinic phase to an incommensurate orthorhombic phase, occurs at a doping content of iron z_Fe=0.027. The second one corresponds to a phase transition from an incommensurate orthorhombic phase to a commensurate orthorhombic phase at z_Fe=0.34. The comparison of these results with those for more limited substitutions of Zn and Ni indicates the significant role of the insertion of the extra oxygen in the (Bi-O)_∞ double layers.     

DISLOCATION DISSOCIATION ON CLIMB PLANE IN TEXTURED YBa2Cu3O7-δ SUPERCONDUCTOR

Using high resolution electron microscopy, the structure of [100] tilt boundary with misorientation of 1.2° in YBa₂Cu₃O_7-δ has been determined. The boundary is shown to consist of an array of partial dis-locations, These partials result from the dissociation of a perfect dislocation with a Burgers vector [0, 0, c] on its climb plane according to the reaction, b→b₁+b₂+b₁+b₂+b₁+b₂. Here b=[00c], b₁=[O,b/2, c/6} (or [a/2, 0, c/6] ). b₂=[0, -b/2. c/6] (or[ -a/2, 0, c/6] ). The spacing between the perfect dislocations satisfies the Read-Shockley formula. There exist no amorphous phases in the boundary region.     

ANNIHILATION OF VERTICAL-BLOCH-LINE CHAINS IN THE WALLS OF THE SECOND KIND OF DUMBBELL DOMAINS SUBJECTED TO AN IN-PLANE FIELD

An experiment was statistically performed on the annihilation of vertical-Bloch-line (VBL) chains in the walls of the second kind of dumbbell domains (ⅡDs) subjected to an in-plane field H_ip. It was again confirmed that there is a critical in-plane field H′_ip, above which all VBL chains of hard domains in garnet bubble films, including ⅡDa, disappear. Just like ordinary hard bubbles (OHBs), it was also found that there exists a critical range of H_ip, from (H_ip)_ID to H′_ip, for ⅡD softening. Over this range, with the increase of H_ip, more and more ⅡDs are softened, accompanied by the successive appearance of the first kind of dumbbell domains, OHBs and soft bubbles. In addition, for the five samples tested, the ratio, H′_ip/(H_ip)_ID, is obviously greater than 2^1/2.     

An investigation of phase separation by magnetic force microscopy in La0.45Sr0.55MnO3-δ(δ≈0.01)

We have found phase separation in La_0.45Sr_0.55MnO_3-δ (LSMO) by means of electron spin resonance, magnetic force microscopy (MFM) and magnetic measurements. Ferromagnetic and antiferromagnetic phases can coexist at low temperatures, and ferromagnetic and paramagnetic phases coexist when the temperature lies between the Néel and Curie temperatures. The size and shape of the ferromagnetic phases (the minority phases) was first observed directly from MFM images. It is suggested that the phase separation in LSMO is not the charge segregation type, but an electroneutral type due perhaps to the nonuniform distribution of oxygen vacancies.     

过渡金属掺杂在Na0.5Bi0.5TiO3体系中诱导产生磁性的第一性原理研究

The origins of magnetism in transition-metal doped Na_0.5Bi_0.5TiO₃ system are investigated by ab initio calculations. The calculated results indicate that a transition-metal atom substitution for a Ti atom produces magnetic moments, which are due to the spin-polarization of transition-metal 3d electrons. The characteristics of exchange coupling are also calculated, which shows that in Cr-/Mn-/Fe-/Co-doped Na_0.5Bi_0.5TiO₃ system, the antiferromagnetic coupling is favorable. The results can successfully explain the experimental phenomenon that, in Mn-/Fe-doped Na_0.5Bi_0.5TiO₃ system, the ferromagnetism disappears at low temperature and the paramagnetic component becomes stronger with the increase of doping concentration of Mn/Fe/Co ions. Unexpectedly, we find the Na_0.5Bi_0.5Ti_0.67V_0.33iO₃ system with ferromagnetic coupling is favorable and produces a magnetic moment of 2.00 μB, which indicates that low temperature ferromagnetism materials could be made by introducing V atoms in Na_0.5Bi_0.5TiO₃. This may be a new way to produce low temperature multiferroic materials.     

INFLUENCE OF γ-RADIATION ON THE DIELECTRIC CHARACTERISTICS IN Rb2ZnCl4 SINGLE CRYSTALS AT INCOMMENSURATE-COMMENSURATE PHASE TRANSITION

In this paper the influence of γ-radiation on the dielectric constants of Rb₂ZnCl₄ crystal at incommensurate-commensurate phase transition (hereafter abbreviated as INC-C transition) are studied. The thermal hysteresis occurs upon both cooling and heating runs, irrespective of whether the samples have been treated with γ-radiation or not. For the γ-irradiated sample, its transition point, T_c, between the INC and C phases is not changed, but the peak value of the dielectric constant at T_c increases abruptly, compared with that before γ-irradiation, When this sample is annealed at 40℃, the peak value restores to the incipient value for the sample free from γ-irradiation. The origin of the phenomenon of the thermal hysteresis of the dielectric constant may be due to the pinning effect of dejects or impurities in the samples.     

boldmath Characterization of the BaBiO3-doped BaTiO3 positive temperature coefficient of a resistivity ceramic using impedance spectroscopy with Tc=155℃

BaBiO₃-doped BaTiO₃ (BB-BT) ceramic, as a candidate for lead-free positive temperature coefficient of resistivity (PTCR) materials with a higher Curie temperature, has been synthesized in air by a conventional sintering technique. The temperature dependence of resistivity shows that the phase transition of the PTC thermistor ceramic occurs at the Curie temperature, T_c=155 ℃, which is higher than that of BaTiO₃ ( ≤ 130 ℃). Analysis of ac impedance data using complex impedance spectroscopy gives the alternate current (AC) resistance of the PTCR ceramic. By additional use of the complex electric modulus formalism to analyse the same data, the inhomogeneous nature of the ceramic may be unveiled. The impedance spectra reveal that the grain resistance of the BB-BT sample is slightly influenced by the increase of temperature, indicating that the increase in overall resistivity is entirely due to a grain-boundary effect. Based on the dependence of the extent to which the peaks of the imaginary part of electric modulus and impedance are matched on frequency, the conduction mechanism is also discussed for a BB-BT ceramic system.     

Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Γ critical point

This paper describes an n-i-p-i-n model heterostructure with a manganese (Mn)-doped p-type base region to check the stability of a positively charged manganese A_Mn⁺ centre with two holes weakly bound by a negatively charged 3d⁵(Mn) core of a local spin S=5/2 in the framework of the effective mass approximation near the Γ critical point (k～0). By including the carrier screening effect, the ground state energy and the binding energy of the second hole in the positively charged centre A_Mn⁺ are calculated within a hole concentration range from 1 × 10¹⁶ cm^-3 to 1 × 10¹⁷ cm^-3, which is achievable by biasing the structure under photo-excitation. For comparison, the ground-state energy of a single hole in the neutral A_Mn⁰ centre is calculated in the same concentration range. It turns out that the binding energy of the second hole in the A_Mn⁺ centre varies from 9.27 meV to 4.57 meV. We propose that the presence of the A_Mn⁺ centre can be examined by measuring the photoluminescence from recombination of electrons in the conduction band with the bound holes in the A_Mn⁺ centre since a high frequency dielectric constant of varepsilon _∞ =10.66 can be safely adopted in this case. The novel feature of the ability to tune the impurity level of the A_Mn⁺ centre makes it attractive for optically and electrically manipulating local magnetic spins in semiconductors.     

交叉分子束方法研究H+CH4和H+CD4反应:CH3/CD3的振动激发态产物通道

We study the H+CH₄/CD₄→H₂/HD+CH₃/CD₃ reactions using the time sliced velocity map ion imaging technique. Ion images of the CH₃/CD₃ products were measured by the (2+1) resonance enhanced multi-photon ionization (REMPI) detection method. Besides the CH₃/CD₃ products in the ground state, ion images of the vibrationally excited CH₃/CD₃ products were also observed at two collision energies of 0.72 and 1.06 eV. It is shown that the angular distribution of the products CH₃/CD₃ in vibrationally excited states gradually vary from backward scattering to sideways scattering as the collision energy increases. Compared to the CH₃/CD₃ products in the ground state, the CH₃/CD₃ products in vibrationally excited states tend to be more sideways scattered, indicating that larger impact parameters play a more important role in the vibrationally excited product channels.     

Ni/α-Al2O3催化剂作用下苯甲醚的加氢脱氧

Ni-based catalysts supported on di erent supports (α-Al₂O₃,γ-Al₂O₃, SiO2, TiO₂, and ZrO₂) were prepared by impregnation. Effects of supports on catalytic performance were tested using hydrodeoxygenation reaction (HDO) of anisole as model reaction. Ni/α-Al₂O₃ was found to be the highest active catalyst for HDO of anisole. Under the optimal conditions, the anisole conversion is 93.25% and the hydrocarbon yield is 90.47%. Catalyst characteriza-tion using H₂-TPD method demonstrates that Ni/α-Al₂O₃ catalyst possesses more amount of active metal Ni than those of other investigated catalysts, which can enhance the cat-alytic activity for hydrogenation. Furthermore, it is found that the Ni/α-Al₂O₃ catalyst has excellent repeatability, and the carbon deposited on the surface of catalyst is negligible.     

Photodetachment of a Negative Hydrogen Molecular Ion near an Interface

Photodetachment of a negative hydrogen molecular ion near an interface is studied by using the two-centre model and the closed orbit theory. The calculation results show that the photodetachment cross section is related to the distance between the two centres in the H₂^- and different molecular ion-interface distances. The comparison between the cross section of H₂^- near an interface with the section of Hˉ shows that at the equilibrium distance of two centres and at low photon energy, the photodetachment cross section of H₂^- is about twice the cross section of Hˉ, which shows that the interference of the two nuclei is very strong; when the distance between the two centres is large, the section of H₂^- is almost the same as the cross section of Hˉ near one interface, which indicates that the interference effect of the two centres anishes.