Ce：LiNbO3晶体光致散射效应的温度特性

对Ce:LiNbO_3光致散射效应的温度特性进行了实验研究。用带导模型和耦合波方程对其进行了理论分析。实验与理论结果相吻合。     

Raman scattering in impurity-induced anharmonic crystals

The theory of first-, second-, and third-order Raman scattering is investigated for isotopically disordered anharmonic crystals. The theory of time-dependent thermodynamic Zubarev Green's functions is adopted to obtain the Raman tensor, intensity of Raman lines, and differential cross sections of various orders of scatterings. It is observed that each class of scattering can be separated into diagonal and nondiagonal parts. The first-order and nondiagonal parts are absent in the case of chemically pure crystals. The diagonal parts are separated into anharmonic and interference terms. The interference terms arise due to the interactions of anharmonic phonons with the local phonons. The temperature and defect dependencies are discussed in detail along with the nature of continuous and line spectra. It is proposed that very high-power laser sources will reveal the third-order spectra, and that the resulting structure can be explained with the help of temperature-dependent one-, two-, and three-phonon density of states.     

Temperature dependence of Raman scattering in Co-doped AlN whiskers

Raman studies are reported for the A ₁ (TO), E ₂ (high) and E ₁ (LO) phonons of Co-doped AlN whiskers from 78 K to 778 K. The temperature dependence of the Raman shifts and line widths of these phonons can be well described by an empirical model which takes into account the contribution of the thermal expansion of the lattice and the symmetric decay of phonons into two and three identical phonons with lower energy. Our results show that the three-phonon process is the dominant decay channel in A ₁ (TO), E ₂ (high) and E ₁ (LO). The symmetric decay of A ₁ (TO) may be attributed to the production of two LA phonons near the M symmetry point of the Brillouin zone. For E ₂ (high), the symmetric decay may be near the M and L symmetry points. The E ₁ (LO) phonon, whose decay behavior has not been identified in AlN, may decay near the H and K symmetry points of the Brillouin zone. Compared with undoped AlN, the stronger temperature dependence of the A ₁ (TO) and E ₂ (high) phonons in Co-doped AlN whiskers was observed, which is probably due to the distortion of the lattice and the much larger tensile stress after doping Co into AlN.     

Temperature dependence of anomalous and ordinary Raman scattering in β-AgI

We report careful measurements of the temperature dependence of Raman scattering in β-AgI, with particular emphasis on the region 12°K to 150°K. Our main result is that the anomalous features in the Raman spectra of β-AgI are definitely first order. Furthermore from the temperature dependence of the anomalous scattering intensity we infer the possibility of a first partial disordering in the Ag⁺ sublattice at about 50°K.     

Temperature dependence of the Raman scattering spectrum of antimony trichloride

The Raman scattering spectrum of SbCl₃ has been studied at various temperatures. The correlation between this spectrum and NQR data permits an identification of the low SbCl₃ frequencies and an evaluation of the temperature dependence of the asymmetry parameter of the electric-field gradient.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 1, pp. 85–88, January, 1970.The authors thank professor A. V. Sechkarev for furnishing us the opportunity to obtain the experimental results in his laboratory.     

LiNbO_3和LiTaO_3的高压拉曼光谱研究

ＬｉＮｂＯ＿３和ＬｉＴａＯ＿３的高压拉曼光谱研究李玉栋，林远坤，徐勇卫，蓝国祥（南开大学物理系天津３０００７１）Ｈｉｇｈ－ＰｒｅｓｓｕｒｅＲａｍａｎＳｔｕｄｙｏｆＬｉＮｂＯ＿３ａｎｄＬｉＴａＯ＿３Ｃｒｙｓｔａｌ￥ＹｕｄｏｎｇＬｉ；ＹｕａｎｋｕｎＬｉｎ...     

Rotational Raman scattering dependence on pump polarization

The influence of the ellipticity degree of the pump radiation polarization on threshold energies and energy conversion efficiencies of stimulated rotational Raman scattering (SRRS) are investigated in H₂ with a XeCl excimer laser, by using different focusing geometries. For the first time, it is shown that the dependence of SRRS on pump radiation polarization is also affected by the focusing geometry, i.e. whether low- or high-angle focusing is applied. The experimentally determined threshold energies as a function of the pump radiation polarization are in accordance with theory mainly at high-angle focusing geometries. It is also shown for the first time that gain suppression effects on vibrational Raman scattering have to be considered in understanding the experimental results. Received: 5 January 1999 / Final version: 10 September 1999 / Published online: 8 March 2000     

Temperature dependence of Raman linewidth and shift in CuI

The temperature dependence of the optical phonon linewidth and frequency shift in CuI has been measured in the temperature range of 4.2 ～ 300 K. Utilizing phonon dispersion curves obtained from neutron scattering measurements, the linewidths and frequency shifts are calculated in terms of three-phonon interactions proposed by Pine and Tannenwald. The experimental results for the change in linewidth and frequency with temperature are in good agreement with this theory.     

Silver nanoparticle coverage dependence of surface-enhanced Raman scattering

We report surface-enhanced Raman scattering (SERS) from 4-mercaptopyridine adsorbed on nanotextured silver surfaces as the coverage of silver is varied. The degree of surface enhancement is strongly dependent on silver coverage and correlated to the extinction of the surface at the Raman excitation wavelength, that extinction being determined by multiparticle surface plasmon resonances. The coverage dependence of the Raman intensity is consistent with signals being dominated by molecules at junctions inside nanoparticle aggregates where electromagnetic energy is localized into “hot spots” by interactions of the incident and scattered fields with the surface plasmons. The Raman intensity drops precipitously near the conductivity percolation threshold because these hot spots are destroyed when conducting paths allow plasmons to propagate. Our approach to substrate preparation provides clean surfaces with average enhancements ≥10⁷, an order of magnitude larger than typical for SERS. PACS 78.67.-n; 78.68.+m; 33.20.Fb     

Resonant Raman scattering in germanium and zincblende-type semiconductors temperature dependence

We have measured the resonance in the Raman scattering near the E₁ gaps of InAs and of a Ge_0.77 Si_0.23 alloy at 77, 300 and 594°K. In contrast to the E₁ gap determined in absorption and transmission measurements, the coresponding peak in the spectral dependence of the scattering cross section shifts very little with temperature; it occurs at all temperatures very near the energy of the absorption peak measured at low temperatures (∼ 77°K).     

Direct observation of anharmonic coupling in the time domain with femtosecond stimulated Raman scattering

Off-resonant impulsive Raman excitation is used to initiate nonstationary nuclear motion in low-frequency vibrational modes of deuterio-chloroform. Femtosecond time-resolved stimulated Raman probing of the high-frequency C-D stretch reveals additional vibrational sidebands that arise as a result of anharmonic coupling between the impulsively excited low-frequency and the probed high-frequency vibrations. These experiments illustrate the detailed molecular information on anharmonic and reactive surfaces available from multidimensional femtosecond stimulated Raman techniques.     

Temperature dependence of the dielectric constant and I.R. reflection spectrum of LiNBO3 by Raman scattering

The temperature and frequency dependence of the dielectric constant, ?_xx, and the reflection coefficient associated with LiNbO₃ in the far infrared (i.r.) was obtained from Raman scattering measurements. The Raman spectrum associated with the E symmetry vibrational mode was carefully studied in the temperature range of 77 to 1190 K. The first order scattering intensity was related to the imaginary part of the dielectric constant and the Kramers-Kronig relation was used to obtain the dielectric constant.     

Pressure dependence of single crystal elastic constants and anharmonic properties of wurtzite

The single crystal, elastic constants of wurtzite (ZnS) have been measured by means of the ultrasonic pulse superposition technique at 25°C as a function of pressure, and at 1 bar as a function of temperature between 25 and 100°C. Within experimental accuracy the pressure dependence in the range up to 10 kbar was found to be linear for the longitudinal modes and quadratic for the shear modes. The elastic constants and their first pressure derivatives agree approximately with theoretical values for the hcp structure with first nearest neighbor central force interaction. The experimental data are used for the discussion of the Born stability limit in relation to the high pressure transformations of wurtzite into the sphalerite and rock salt structures, for the calculation of the Grüneisen parameter in the anisotropic elastic continuum approximation, and for the calculation of the isothermal equation of state at high pressure. The elastic properties of sphalerite (ZnS) are calculated from the data for wurtzite in the ‘equivalent sphalerite approximation’ of Sullivan and used for discussing the dependence on ionic radii of the pressure coefficients of the elastic constants in sphalerite-type II–VI compounds. The Born stability limit, the Grüneisen parameter and the isothermal equation of state of sphalerite are also calculated and compared with the corresponding quantities for wurtzite.     

Temperature dependence of mobility in scattering on point defects

Scattering amplitude in the field of a short-range force center is calculated using factorization of the potential. The results obtained are used to study the temperature dependence of charge-carrier mobility in the random field of chaotically distributed structural point defects.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 50–57, September, 1985.In conclusion, the author sincerely thanks V. L. Bonch-Burevich for his interest in the study and most valuable discussions.     

Carrier density dependence of soft TO-phonon in SnTe by Raman scattering

The frequency of soft TO-phonon in SnTe was observed by Raman scattering below the transition temperature, for the specimens of various carrier concentrations. The result was analyzed in terms of the interband electron to TO-phonon interaction.