Growth twins in self-frequency doubling laser crystal YbxY1−xAl3(BO3)4

Using chemical etching.method, the growth twins in self-frequency doubling laser crystal Yb_xY_1−xAl₃(BO₃₄ have been observed. The etching pits on both sides of growth twin boundaries in the (10 1) slice are of the triangles with different orientations. The structure of growth twins is investigated by transmission synchrotron topography. In the transmission synchrotron topograph, the growth twins are visible not by ‘domain contrast’ but by ‘boundary contrast’, i.e. the twins appear in the topograph in form of X-ray kinematical diffraction contrast due to the lattice strain stemming from the impurity incorporation in the boundaries. The growth twins in Yb_xY_1−xAl₃(BO₃)₄ crystal are of inversion types, since no domain contrast was observed.     

Sol–gel synthesis and optical properties of size controlled Indium Arsenide nanocrystals embedded in silica glasses

III–V semiconductor Indium Arsenide (InAs) nanocrystals embedded in silica glasses was synthesized by combining the sol–gel process and heat treatment in H₂ gas. The size of InAs nanocrystals can be easily controlled via changing the In and As content in the starting materials and the heating temperature in a H₂ gas atmosphere. Absorption measurements indicate a blue shift in energy with a reduction on the In and As content in the SiO₂ gel glasses as a result of quantum confinement effects. A near-infrared photoluminescence with peak at 3.40 μm was observed at 6 K under 514.5 nm Ar⁺ laser excitation from InAs nanocrystals embedded in the silica gel glasses.     

Influence of the nucleation time-lag on the activation energy in non-isothermal crystallization

In the present work, the influence of the nucleation time-lag on the non-isothermal glass crystallization is discussed. Differential thermal analysis (DTA) results of an iron-rich glass nucleated by Cr₂O₃ were obtained at different heating rates. The activation energy of crystallization, E_c, and the Avrami parameter, m, estimated by Kissinger's and Ozawa's equations were shown to be dependent on the heating rate. The value of E_c, obtained at 2.5, 5 and 7.5 K/min heating rates was calculated as 299 kJ/mol, while the value of E_c, obtained at 10, 15 and 20 K/min was as 499 kJ/mol. The value of m for ‘low' and ‘high' heating rates were 2.57 and 1.45, respectively. The results were interpreted on the basis of the non-steady state nature of the nucleation process. It was assumed that at high heating rates no nucleation takes place and the crystals grow on a existing fixed number of nuclei; the activation energy of crystal growth, E_g, can be estimated by applying the Kissinger equations. At low heating rates nucleation occurs and the number of nuclei formed is influenced by the heating rate; E_g can be estimated by the Matusita and Sakka equation.     

Surface structure and chemistry of high surface area silica gels

Combined Raman and ²⁹Si NMR investigations of high surface area silica gels indicate that dehydroxylation of the a-SiO₂ surface results preferentially in the formation of cyclic trisiloxanes (3-membered rings). Estimates of the maximum experimentally observed concentration of 3-membered rings correspond to a surface coverage of about 28–58%. Two consequences of 3-membered rings on the a-SiO₂ surface are enhanced hydrolysis rates and increased skeletal densities.     

Non-Debye relaxation and the glass transition

A review of some long-standing problems, as well as some new theoretical results regarding non-Debye relaxation and the glass transition is given. The question of whether a phase transition below (or above) the glass transition temperature, T_g, exists is considered. The result that the glass transition temperature and jumps in the dynamic heat capacity and volume expansion coefficient can be calculated if the relevant frequency-dependent linear response functions are known makes the question of the origin of non-Debye relaxation even more important. In effective medium theories, certainly valid at high temperatures, non-Debye relaxation is apparently due to dynamic effects of interactions. At lower temperatures, energy disorder is larger compared with kT, and percolation-based theories may be more appropriate. The question as to the actual magnitude of disorder in energies cannot be conclusively resolved at this time. Certainly, it has been shown that systems exist in which non-Debye relaxation is due exclusively to disorder but, in many systems, an important component of the energy disorder is a manifestation of the influence of topological disorder on interactions. Thus, in these systems, an increase in the magnitude of dynamic interactions relative to kT accompanies the increase in the disorder. The question as to whether universal properties imply universality in the mechanism of non-Debye relaxation is explored in some depth. The present article reaches the tentative conclusion that the relative importance of ‘disorder’ and ‘interactions’ may be dependent on the type of glass considered, and possibly even on specific systems. Certainly, the relative importance of dynamic interaction effects increases as the frequency of an applied ‘force’ is reduced. If their respective influences ‘crossover’ in importance at some finite frequency, ω^*, the relevant question is whether ω^* is above, at, or below the relaxation peak frequency, ω^*. If universality exists, it relates to the role of disorder, but such a conclusion would require that ω^* ≤ _c always, the generality of which has not been established.     

Fabrication of fluorine-doped silica glasses by the sol-gel method

Fluorine-doped silica glasses are produced by the sol-gel method for optical fiber preforms. In order to dope fluorine into silica glass, fluorinated silicon alkoxide, Si(OC₂H₅)₃F, is titrated into SiO₂ sol solutions. The fluorine content in silica glass depends on: the fluorine concentration in the gel, the specific surface area of SiO₂ particles and the heating rate in the sintering process. Fluorine-doped silica glass with a maximum relative refractive index difference of −0.93% is obtained. Using this technique, optical fibers with a triangular refractive index profile are fabricated with a minimum optical loss of 1.6 dB/km at 1.69 μm wavelength.     

Origin of Rayleigh scattering and anomaly of elastic properties in vitreous and molten GeO2

Vitreous (v) and molten (m) GeO₂ were studied by Rayleigh and Mandel’shtam–Brillouin scattering spectroscopy and high-temperature acoustics. Original measurement apparatus and procedure were used that included Bayseian deconvolution of light scattering spectra of vGeO₂ and a specially designed high-temperature (up to 1500 °C) acoustic interferometer to measure temperature and frequency dependence of ultrasonic (US) velocity and attenuation in mGeO₂. Landau–Placzek ratios for vGeO₂ were found optically (from the light scattering spectrum) and acoustically (through the Schroeder’s formalism). Dispersion of optical and other physical parameters of vGeO₂ found by many authors is explained by the existence of small amount of GeO in the samples. It means that properties of vGeO₂ are under the influence of redox synthesis conditions controlling the GeO₂ ↔ GeO and coordination [GeO₄] ↔ [GeO₆] equilibrium in vGeO₂. Measurements of temperature dependencies of longitudinal ultrasonic velocities in mGeO₂ and in the PbO–GeO₂ glass melts as a function of PbO concentration shows existence of ‘water-like anomaly’ in mGeO₂ and in liquid germanates with the rich content of GeO₂ where equilibrium sound velocity increases with the temperature.     

Synthesis and characterization of type-II textured tungsten disulfide thin films by vdWR process with Pb interfacial layer as texture promoter

The growth of type-II textured tungsten disulfide (WS₂) thin films by solid state reaction between the spray deposited WO₃ and gaseous sulfur vapors with Pb interfacial layer has been studied. X-ray diffraction (XRD) technique is used to measure the degree of preferred orientation ‘S’ and texture of WS₂ films. Scanning electron microscopy (SEM) and transmission electron microscopy techniques have been used to examine the microstructure and morphology. The electronic structure and chemical composition were studied using X-ray photoelectron spectroscopy (XPS). The use of Pb interfacial layer for the promotion of type-II texture in WS₂ thin films is successfully demonstrated. The presence of (0 0 3 l), (where l=1, 2, 3, …) family of planes in the XRD pattern indicates the strong type-II texture of WS₂ thin films. The crystallites exhibit rhombohedral (3R) structure. The large value of ‘S’ (1086) prompts the high degree of preferred orientation as well. The stratum of crystallites with their basal plane parallel to the substrate surface is seen in the SEM image. The EDS and XPS analyses confirm the tungsten to sulfur atomic ratio as 1:1.75. We purport that Pb interfacial layer enhances type-II texture of WS₂ thin films greatly.     

A study of Raman spectroscopy and low-temperature specific heat in gel-synthesized amorphous silica

A comparative study of low-temperature specific heat (1.5–25 K), C_p, and low-frequency Raman scattering (<150 cm⁻¹) has been performed in amorphous silica samples synthesized by sol–gel method (xerogels) and thermally densified in a range of densities, from ρ=1250 kgm⁻³ to ρ=2100 kgm⁻³, close to the density of the melt quenched vitreous silica (v-SiO₂). The present analysis concerns the application of the low-energy vibrational dynamics as an appropriate tool for monitoring the progressive thermal densification of silica gels. By comparison with v-SiO₂, the Raman and thermal properties of xerogels with increasing thermal treatment temperature revealed the following important results: (i) the existence of a critical treatment temperature at about 870°C, where a homogeneous viscous sintering produces full densification of the samples. This effect is detected by the observations of the Boson peak in Raman spectra at about 45 cm⁻¹ and of a peak in C_p(T)/T³, very close to those observed in v-SiO₂; (ii) in silica xerogels treated at temperatures less than about 800°C, the low-frequency Raman scattering is greater, with a continuous decreasing unstructured shape, and the Boson peak is not detected in the spectra.     

Colloidal sol/gel processing of ultra-low expansion TiO2/SiO2 glasses

A series of titania-silica glasses with 0–9% TiO₂ were fabricated using a sol/gel process. The sol was prepared by dispersing colloidal silica fume in an aqueous solution of titania which was synthesized through the acid-catalyzed hydrolysis of titanium isopropoxide. The sols gelled in 2–4 days, and then were dried for 6–8 days. The dry gels were sintered at 1450–1500°C to produce clear, dense, microstructure-free glasses. The gels underwent a total shrinkage of 50% to yield glass rods about 50 mm long and 5 mm in diameter, or glass discs about 4 cm in diameter and 5 mm thick. The drying step was most critical in the production of crack-free specimens.

In the gel, the transmission electron microscope (TEM) revealed the presence of 1–5 nm rutile microcrystallites uniformly distributed within a network of colloidal silica particles. After sintering to 1450–1500°C, though, a dense, transparent, microstructure-free glass was created. Fourier transform infrared spectroscopy (FTIR) verified the formation of an amorphous solid-solution of titania and silica after sintering.

The thermal expansion of the glasses was measured using a differential dilatometer. The average linear coefficients of thermal expansion (CTE @ 25–675°C) varied between +5 × 10⁻⁷ and −0.2 × 10⁻⁷°C⁻¹ in the range 0 to 9% TiO₂. The glass with 7.2% TiO₂ exhibited a zero thermal expansion coefficient at 150–210°C. The hysteresis in CTE on heating and cooling was of the order of 0.01–0.02 ppm.     

A new method for fabricating water repellent silica films having high heat-resistance using the sol–gel method

There has been a great demand in the field of kitchen appliances to develop transparent water repellent films which have high heat-resistance around 300°C. However, those films have not been obtained by conventional sol–gel methods. In this paper, we propose a new method for fabricating transparent water repellent films with high heat-resistance using the sol–gel method, in which silicon or germanium substrates were coated with a solution including tetraethoxysilane (Si(OC₂H₅)₄) and (2-perfluorooctyl)ethyltrimethoxysilane (CF₃(CF₂)₇C₂H₄Si(OCH₃)₃), followed by ‘ammonia-treatment' and annealed at 300°C. The contact angles of water on the ammonia-treated film maintained its initial value, 110° after the heat treatment at 300°C for 250 h while those on the untreated film decreased to 70°, indicating that the ammonia-treatment improves heat-resistance on the film. The mechanism of ammonia-treatment was inferred from FT-IR results; the ammonia-treatment should accelerate hydrolysis and polymerization of FAS and TEOS molecules, resulting in high density of siloxane bonds between FAS and silica glass. These bonds suppress the evaporation of FAS molecules from the film during the heat treatment at 300°C, thus the film has high heat-resistance.     

Microstructure and growth rate of chemical vapour deposited TiN films in a vertical cold wall reactor

TiN films were grown on SUS304 substrates heated by an induction furnace in a vertical cold wall reactor. Scanning electron microscopy, transmission electron microscopy and X-ray diffraction were used to characterize the microstructures of films obtained at different deposition conditions (temperature, gas flow rate and gas composition). Film structures obtained in the present vertical reactor had the following features compared with those in the tubular reactor: (1) Abnormally grown “star-shaped” crystals were observed on the surfaces of films deposited in the following ranges of total gas flow rate (Q_T), temperature (T) and partial pressures (P): 9.0×10⁻⁶ ≤ Q_T ≤ 1.6×10⁻⁵ m³ s⁻¹, 1223 ≤ T ≤ 1273 K, 0.92 ≤ P_TiCl4 ≤ 6.18 kPa, P_H2 = P_N2. The matrix grains were responsible for (211) preferred orientation. (2) Surface morphologies did not vary so much with P_TiCl4. On the other hand, a drastic change was brought about by adding HCl to the source gas, i.e., plate-shaped crystals dominated and the large “star-shaped” crystals were no longer present. (3) The apparent activation energy for deposition reaction was 230 kJ/mol (1173 ≤ T ≤ 1273 K) and 76.5 kJ/mol (1273 ≤ T ≤ 1373 K) at P_TiCl4 = 2.43 kPa and P_H2 = P_N2 = 49.45 kPa.     

A comparison of the medium-range order in glassy GeS2 and Sb2S3

In amorphous (a-) GeS₂ there is only one medium-range order (MRO) dependent X-ray scattering feature, i.e., the ‘first sharp diffraction peak’ (FSDP), whereas in a-Sb₂S₃ all scattering features in the interval 1–2.4 Å⁻¹ are in fact MRO-dependent. The basic element of MRO in a-GeS₂ is a part of a chain of corner bound tetrahedra extracted from the high temperature form of c-GeS₂; in a-Sb₂S₃ it is a part of a crystalline-like (Sb₂S₃)_n band. Ordering of parts of these bands is characterized by a greater interband separation than in the crystal. By contrast with a-GeS₂, the MRO-dependent medium-angle scattering features in a-Sb₂S₃ are less sensitive to fluctuations of the interband (intercluster) ordering distance.     

Relationship between T0, Tg and their pressure dependence for supercooled liquids

We show that simple expressions can be derived from the Vogel–Fulcher–Tammann (VFT) law relating the glass transition temperature T_g, the VFT temperature T₀, their pressure derivatives, the steepness index of the ‘Angell plot’ and the strength parameter D of the VFT equation, in good agreement with experimental data. In the same way one can describe the dependence of the dT_g/dP on the relaxation time τ_g chosen to define the temperature T_g. Thus, this procedure allows a consistent rescaling and comparison of pressure dependent parameters obtained from different experiments and simulations.     

Infrared study of SiO2 sol to gel evolution and gel aging

The evolution of the gelation of silica gel was studied by means of Fourier transform infrared spectroscopy. The gel was prepared by hydrolysis and polycondensation of tetraethyl orthosilicate in the presence of water with HCl, and with formamide (DCCA) in methanol either added or not. For both systems the gelation process was followed by the time evolution of the ν-Si---O(H) and ν-Si---O(Si) absorption bands. In the systems which used formamide, the ν-Si---O(H) peak shifts from ≈ν = 950 cm⁻¹ for τ = 0 to ≈ν = 968 cm⁻¹ (t = t_gel) and tends to shifts to 975 cm⁻¹ over a long period of time (t = 100t_gel), and a slow rate evolution between 0.1 and 0.4 t_gel is observed. In the absence of formamide the same evolution is observed without the slow rate plateau. For ν-Si-O(Si) absorption bands, the band near 1075 cm⁻¹ remains practically unchanged in both systems during the experiment time, but the second absorption band at 1133 cm⁻¹ is split into two bands each having its own specific evolution, depending on composition and temperature.     

Mechanisms of network rearrangement and compaction in a-SiNx:H films exposed to synchrotron radiation

The network of hydrogenated silicon nitride (a-SiN_x:H) films deposited by plasma-enhanced chemical vapor deposition is compacted when the film is irradiated by high-energy photons in the range from vacuum-ultraviolet to soft X-rays (hν>100 eV). In situ monitoring by spectroscopic ellipsometry of the change in the film’s optical response discriminated between the photon-stimulated structural change and the solely temperature-dependent change of the dielectric constant. To elucidate the compositional difference before and after irradiation, the dielectric function of a-SiN_x:H was modelled by a mixture of its component dielectric functions, i.e., of Si₃N₄, crystalline Si, and voids, under the Bruggeman effective medium approximation. Irradiation decreased the nominal volumes of void and c-Si components from their initial values by 44% and 49%, respectively. The resulting total 9.8% reduction in thickness can be explained by the compaction model. The photolytic origin of the reaction was demonstrated by the quick commencement and termination of the changes in optical evolution in response to the supply and cessation of irradiation, as well as by the insensitivity of the change in the refractive index to the temperature of irradiation. The microscopic process which is primarily responsible for the rearrangement of the network is cross-linking between the H-terminated –SiH_x and –NH_y species followed by the release of H₂. In contrast to this, the creation of dangling bonds is a minor process.     

Atomic structure of Al55(Cr1−xMnx)15Si30 metallic glasses observed by neutron diffraction

An atomic structure of Al₅₅(Cr_1−xMn_x)₁₅Si₃₀ (x = 0, 0.49,1) metallic glasses was studied by neutron diffraction. An advantage of the neutron diffraction technique was fully exploited by utilizing the negative scattering length of Mn to form a neutron zero scattering ‘alloy’ for the component Cr_0.51Mn_0.49 in this quaternary Al---(Cr, Mn)---Si alloy. This allows the atomic distribution of the resulting quasibinary Al---Si metallic glass to be derived directly. Moreover, the (Al, Si)---TM (TM = Mn, Cr) and TM---TM pair correlations were also extracted by taking appropriate linear combinations of the atomic structures for the Al₅₅(Cr_1−xMn_x)₁₅Si₃₀ (x = 0, 0.49, 1) metallic glasses. A sharp first peak in the (Al,Si) ---TM pair correlations thus obtained led to the conclusion that a strong attractive interaction exists between (Al, Si) and TM atoms and, hence, that the presence of the TM atoms is responsible for the formation of an amorphous phase.     

Infrared and thermogravimetric study of high pressure consolidation in alkoxide silica gel powders

High density, transparent, crack-free and hard compacts of silica gel were produced by compaction under nearly hydrostatic environment at 4.5 GPa, at room temperature. The starting material was used three days after synthesis by hydrolysis of alkoxides without additional treatment. Fourier transform infrared spectroscopy (FTIR), using the KBr technique and a high vacuum cell at temperatures up to 450°C, and thermogravimetric analysis (TGA) up to 900°C was conducted. A reduction up to 60% in the adsorbed water content of the compacted silica gel was observed. Changes in the 3000 to 3800 cm⁻¹ region indicate that the surface silanol groups became bridged, which promotes condensation reactions of dehydroxylation. Those results suggest that the mechanism for consolidation under high-pressure, is ‘cold sintering’ process, where silanol groups at the surface of the nanoparticles condense to form siloxane bonds between the particles and water, resulting in a stiff body with closed nanopores containing trapped water.     

SIMS study of the concentration of dopants in LPCVD silicon thin films

Measurements of solid phase dopant concentration (S) of LPCVD Si thin films as a function of substrate temperature (T_s = 500−640 ° C) and gas phase doping ratio (R = 1 × 10⁻⁵ −4 × 10⁻²) by SIMS indicate different behaviors of P and B in the films. A linear relation S = b(T)R is observed for B-doped film with b(T) varying from 4 to 50 depending on T_s. Boron-doped microcrystalline film has a higher doping efficiency than that of P-doped ones.     

The short-range order in ternary ZrF4---BaF2---ErF3 glasses

The short-range order structures in ternary ZrF₄---BaF₂---ErF₃ glasses have been studied by X-ray absorption fine structure (XAFS). The near-neighbor structures around Zr, Ba and Er have been determined and compared with that in binary ZrF₄---BaF₂ glasses. The near-neighbor structures around Zr and Ba are scarcely affected by doping with ErF₃. The structural parameters of near neighbors around Er in the glasses are near to that in ErF₃, but the corresponding distance and coordination number of near neighbors in the glasses decrease slightly. It is also observed that the intensities of the white lines at the Er L and L absorption edges in these glasses are different from that in c-ErF₃. Meanwhile, compared with that of the corresponding fluoride, the changes of the ‘white line’ at the Er L_,-edges in the glasses differ from the case of Nd. The causes leading to these differences are discussed.