退火对TiO2薄膜形貌、结构及光学特性影响

利用射频磁控溅射技术在熔融石英基片上制备TiO<,2>薄膜,采用X射线衍射、扫描电子显微镜(SEM)、拉曼光谱以及透过谱研究了退火温度和退火气氛对TiO<,2>薄膜的结构、形貌和光学特性的影响.实验结果表明:在大气环境下退火,退火温度越.高,薄膜晶化越好,晶粒明显长大,温度高于700℃退火的薄膜,金红石相已明显形成.实验还发现,退火气氛对金红石相的形成是非常重要的,拉曼光谱反应出Ar气氛退火,抑制了金红石晶相的发育,薄膜仍以锐钛矿相为主.Ar气氛退火的薄膜在可见光范围内的透过率比大气退火的要低,并且由透过率曲线推知:金红石的光学带隙约为2.8 eV,比锐钛矿的光学带隙小0.2 eV.     

Anomalous optical constants of thin films

The explanation of anomalous optical constants in thin chemically distinct layers on substrates offered by Plumb is re-examined and extended. The model invokes the concept of the space charged boundary layer and treats the charge carrier population as a free-electron gas to derive the optical behaviour of thin surface films. The implication of the space charge means that the optical constants of a dielectric film on a metal will vary over a distance directly proportional to the dielectric constant of the film and inversly proportional to the concentration of the electrons at the metal/film interface. Similarly as the temperature increases this space charge region should extend to larger distances from the interface.     

Effect of Nb doping on morphology,crystal structure,optical band gap energy of TiO2 thin films

Nb–TiO₂ nanofibers and thin films were prepared using a sol–gel derived electrospinning and spin coating, respectively, by varying the Nb/Ti molar ratios from 0 to 0.59 to investigate the effect of Nb doping on morphology, crystal structure, and optical band gap energy of Nb–TiO₂. XRD results indicated that Nb–TiO₂ is composed of anatase and rutile phases as a function of Nb/Ti molar ratio. As the Nb/Ti molar ratio rose, the anatase to rutile phase transformation and the reduction in crystallite size occurred. The band gap energy of Nb–TiO₂ was changed from 3.25 eV to 2.87 eV when the anatase phase was transformed to rutile phase with increasing the Nb doping. Experimental results indicated that the Nb doping was mainly attributed to the morphology, the crystal structure, the optical band gap energy of Nb–TiO₂, and the photocatalytic degradation of methylene blue.     

Effects of nitrogen doping on optical properties of TiO2 thin films

The potential for extending the optical absorption range of TiO₂ by doping with nonmetallic elements was examined in nitrogen-containing TiO₂ thin films. Thin films of TiO_2-xN_x were synthesized on glass and silicon substrates by ion-beam-assisted deposition to obtain a wide range of nitrogen concentrations. The compositions of the films were determined by Rutherford backscattering spectrometry and X-ray photoelectron spectroscopy. The structures of the films were analyzed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. The optical properties of the films were measured by UV-Vis spectroscopy and ellipsometry. A characteristic decreasing trend in band-gap values of the films was observed within a certain range of increasing dopant concentrations. As the nitrogen concentration increased, the structure of the films evolved from a well-defined anatase to deformed anatase. The reduced band gaps are associated with the N 2p orbital in the TiO_2-xN_x films. PACS 78.66.-w; 78.20.Ci     

Structural and optical properties of electrohydrodynamically atomized TiO2 nanostructured thin films

In this paper, we report an alternate technique for the deposition of nanostructured TiO₂ thin films using the electrohydrodynamic atomization (EHDA) technique using polyvinylpyrrolidone (PVP) as a stabilizer. The required parameters for achieving uniform TiO₂ films using EHDA are also discussed in detail. X-ray diffraction results confirm that the TiO₂ films were oriented in the anatase phase. Scanning electron microscope studies revealed the uniform deposition of the TiO₂. The purity of the films is characterized by using Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS), confirming the presence of Ti–O bonding in the films without any organic residue. The optical properties of the TiO₂ films were measured by UV-visible spectroscopy, which shows that the transparency of the films is nearly 85% in the visible region. The current–voltage (I–V) curve of the TiO₂ thin films shows a nearly linear behavior with 45 mΩ?cm of electrical resistivity. These results suggest that TiO₂ thin films deposited via the EHDA method possess promising applications in optoelectronic devices.     

Influence of oxygen vacancies on optical properties of anatase TiO2 thin films

This paper presents an investigation into the relaxation process of photo-excited carriers in anatase TiO₂ thin films, in which the concentration of oxygen vacancy is controlled by annealing at various temperatures in an oxygen atmosphere. The influence of oxygen vacancies on absorption spectra, photoluminescence (PL) spectra, and PL decay dynamics are discussed.     

Influence of substrate surface roughness on light scattering of TiO2 optical thin films

Optical thin films are used in many optical elements; however, light scattering can be problematic. We investigate the effect of substrate surface roughness on the light scattering of optical thin films. The substrates are classified according to their surface roughness, from fine to very rough, and coated with a single TiO2 layer or a SiO2/TiO2 multilayer. The light scattering intensity increases as the substrate roughness increases. Scanning electron microscopy reveals that the number of nodules formed in the optical thin films increases with the substrate roughness, which affects the light scattering properties.     

The optical constants of the thin films of pseudoisocyanine chloride

The absorption and the reflection of dried PIC films were investigated between 16 000 cm^-1 and 23 000 cm^-1. From the experimental data a complex refractive index is derived exhibiting high peak values and strong dispersion. The thickness of the films ranges from 0.02 μm to 0.4 μm. The investigated films show no preferential axis either in or perpendicular to the plane of the film.     

Effect of Er doping on optical band gap energy of TiO2 thin films prepared by spin coating

In order to evaluate the effect of Er doping in the range of 0–1.0 mol% on optical indirect band gap energy (E_g) of the film, the Er-doped TiO₂ (Er-TiO₂) thin films were spin-coated onto fluorine-doped SnO₂ coated (FTO) glasses. Glancing angle X-ray diffraction (GAXRD) results indicated that the films whose thickness was 550 nm consisted of pure anatase and FTO substrate. The anatase (101) TiO₂ peaks became broader and weaker with the rise in Er content. The apparent crystallite size decreased from 12 nm to 10 nm with increasing the amount of Er from 0 mol% to 1.0 mol%. UV–vis spectrophotometry showed that the values of E_g decreased from 3.25 eV to 2.81 eV with the increase of Er doping from 0 to 0.7 mol%, but changed to 2.89 eV when Er content was 1.0 mol%. The reduction in E_g might be attributed to electron and/or hole trapping at the donor and acceptor levels in the TiO₂ band structure.     

IR reflectance spectra and optical constants of Al-Cu-Fe quasicrystalline thin films

The optical properties of Al-Cu-Fe quasicrystalline films and, for comparison, crystalline films of similar composition are studied using middle-and far-IR reflectance spectroscopy. Measurements are performed with 0.1-to 0.3-μm-thick films on sapphire substrates. The complex dielectric function of the films is calculated from experimental data. It is found that the real part of the dielectric function is negative for the crystalline films but positive and weakly frequency dependent, except in the range near 245 cm^?1, for the quasicrystalline films. The optical conductivity of the quasicrystalline films does not feature the Drude peak observed for crystalline films and exhibits a peak at 245 cm^?1, which can be assigned to optical phonon excitations and is absent for crystalline films.     

Infrared optical constants and dichroism of thin polymer films: Trans-polyacetylene

We propose expressions allowing to determine the optical constants of thin films, which are not exactly plane-parallel plates but nevertheless exhibit multiple reflection interference patterns in their transmission and reflection spectra. These expressions can be used to determine the index of refraction and the absorption coefficient and their spectral dependence. The method is applied to measurements on thin amorphous films and oriented crystalline films of trans-(CH) _x in the infrared region. As final results for the oriented samples we derive values for the refractive index and its anisotropy in the spectral region between 20 m and 2.5 m and give absolute values of the absorption intensity of the most prominent IR-active vibrations. The intensity ratios, which are different from values reported in the literature for stretch oriented fibrous trans-(CH) _x , and the dichroic behavior of the most important lines are discussed. Dedicated to Professor Karlheinz Seeger on the occasion of his 60th birthday     

Optical constants of thin CoSi2 films on silicon

The optical transmission of CoSi₂ films of thickness 2.6–15 nm is measured in the wavelength range 1–20 m. The optical constants are evaluated by taking into account multiple reflections in the film and by fitting a Drude model. The plasma frequency _p=5.4–7.6 eV is equivalent to a carrier density n _eff=3×10²² cm^–3 and one carrier per unit cell. The relaxation frequency of the plasma resonance assumes high values =2 eV near the interface to silicon and decreases into the bulk film over several nanometers. Films grown off-axis from the (111) Si orientation exhibit an enhanced relaxation frequency.     

Sensitivity of approximate formulas for determining optical constants of thin films

The sensitivity of approximate formulas for determining the optical constants of thin films using measurement of reflectancesR and transmittancesT at normal incidence have been investigated theoretically. The ranges of refractive indexn, absorption indexk,2nk (=₂) andn ²–k ²(=₁) within relative errors of 5%, 10%, and 20% may be obtained. Selected signs of (₁)⁺ or (₁)^– have been determined. Validity of the condition n₀ A=n _s A has been also evaluated (A=1–R –T andA=1–R–T).     

Microstructural parameters and optical constants of ZnTe thin films with various thicknesses

Different thickness of polycrystalline ZnTe films have been deposited onto glass substrates at room temperature by vacuum evaporation technique. The structural characteristics studied by X-ray diffraction (XRD) showed that the films are polycrystalline and have a zinc blende (cubic) structure. The calculated microstructure parameters revealed that the crystallite size increases and microstrain decreases with increasing film thickness. The transmittance and reflectance have been measured at normal and near normal incidence, respectively, in the spectral range 400-2500 nm. For ZnTe films of different thicknesses, the dependence of absorption coefficient, α on the photon energy showed the occurrence of a direct transition with band gap energy (For ZnTe films of different thicknesses) confirming the independency of deduced energy gap on film thickness. The refractive indices have been evaluated in terms of envelope method, which has been suggested by Swanepoul in the transparent region. The refractive index could be extrapolated by Cauchy dispersion relationship over the whole spectra range, which extended from 400 to 2500 nm. It was observed that the refractive index, n increased upon increasing the film thickness up to 508 nm, lying within the experimental error for further increases in film thickness.     

Adsorption-induced conductance changes of thin Pt films and PtPd/TiO2 gas sensors

Chemisorption of H₂ and O₂ and resulting changes in electrical conductance of a typical gas sensing material, PtPd/TiO₂, and thin Pt films on glass are studied and compared. The activation energy of conduction increases as Pt film thickness decreases. Chemisorption of H₂ on thin Pt films causes an increase in conductance and activation energy of conduction. O₂ chemisorption results in a decrease in conductance and increase in activation energy of conduction. Alteration in the number of charge carriers and reduction in charge carrier mobility are the mechanisms proposed for the observed changes. Compared to thin Pt films, relatively large changes in electrical conductance are observed upon chemisorption of gases on TiO₂ supported PtPd. The role of the oxide substrate in the observed chemical interaction and electronic response is discussed. The electronic changes upon adsorption/desorption of gases are reversible for thin Pt films but only partially reversible for TiO₂ supported PtPd.     

Effects of process parameters on the optical constants of highly textured V2O5 thin films

The optical properties of the highly-textured V₂O₅ thin-films grown on Si(100) by sputter-deposition at various oxygen reactive-pressures were investigated in detail. The profiles of the optical constants, namely the refractive index and extinction coefficient, of V₂O₅ films were evaluated in the photon-energy range of 1–5 eV. At photon-energy above 2.5 eV, the dispersion behavior in optical constants is explained based on Lorentz-Drude model. The refractive index dispersion fits to a Cauchy’s relation at photon-energy below 2.5 eV, where the V₂O₅-film is mostly transparent. The optical transitions across the bandgap occur at energy ～2.5–3.2 eV depending on the V₂O₅ growth conditions and film-microstructure. The highly-textured and c-axis oriented V₂O₅-films, fabricated under optimum conditions of temperature and oxygen partial pressure, exhibit excellent optical characteristics similar to V₂O₅ single crystals.     

Thickness effect on the structural and optical constants of stibnite thin films prepared by sulfidation annealing of antimony films

This paper deals with some physical properties of antimony sulphide Sb₂S₃ thin films obtained by an annealing process in sulphur vapors at 300 °C of Sb thermal evaporated thin films deposited on glass substrate. The crystal structure and surface morphology were investigated by both XRD and AFM techniques. This structural study shows that Sb₂S₃ thin films were well crystallized in orthorhombic structure and some parameters such as the lattice parameter, crystallite size, microstrain and degree of preferred orientation have been reported and correlated with the effect of crystallite size. On the other hand, the refractive index and the extinction coefficient were discussed in terms of the Forouhi–Bloomer model. The optical band gap was found to range from 1.75 to 2.23 eV. Finally, the analysis of the optical parameters extracted from the Urbach–Martienssen and Forouhi–Bloomer models lead to some explanations of the correlations between the structural properties in terms of the crystallite size and optical ones.     

Optical constants of thin germanium films

The paper gives the values of the optical constants of thin films of germanium obtained by evaporating germanium in a vacuum onto glass slides in the region of 0·35–0·78 for an index of absorptionk and 0·35–2·5 for refractive indexn. The results are compared with the values obtained by other authors and with the values ofn andk for single crystals. It is shown that these values for thin films and single crystals slightly differ quantitatively but agree fairly well qualitatively, which had not been sufficiently the case in previous papers.

---

, , 0,35 0,78 k 0,35–2,5 n. n, k . , , , , .